JPH0610717Y2 - Hybrid integrated circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a hybrid integrated circuit, and more particularly to improvement of an insulating structure of the hybrid integrated circuit driven by a high power supply voltage.

(B) Conventional technology A conventional hybrid integrated circuit has a metal substrate (11) as shown in FIG.
An insulating resin layer (12) provided on the substrate (11), a conductive path (13) provided on the insulating resin layer (12), and a semiconductor element (14) fixed on the conductive path (13). ) And.

An aluminum substrate having excellent thermal conductivity is used as the metal substrate (11), and the surface thereof is subjected to insulation treatment by anodic oxidation.

The insulating resin layer (12) is made of an adhesive resin such as epoxy or polyimide, and is adhered onto the substrate (11) to form a conductive path (1
3) The copper foil to be used is attached.

The conductive path (13) is formed by etching a copper foil into a predetermined pattern, and is formed on the conductive path (13) or the conductive path (13).
A circuit element (14) such as a transistor, a chip resistor or a chip capacitor is fixed between them. Further, although the conductive tube (13) and the metal substrate (11) are not shown, for example, the metal substrate (1
1) is provided with a counterbore part by means such as a drill, and the counterbore part and a part of the conductive path (13) are connected by a wire or the like, so-called substrate grounding structure is performed to prevent adverse effects from internal and external noise. ing. In order to protect the circuit element (14), the hybrid integrated circuit is casing with a lid (15) made of a resin material. The hybrid integrated circuit based on the metal substrate subjected to such an insulation treatment is also used as an inverter IC.

The similar hybrid integrated circuit described above is disclosed in Japanese Examined Patent Publication No. 52-37587.
It is described in Japanese Patent Publication No.

(C) Problems to be solved by the device However, in the hybrid integrated circuit having the above-mentioned structure, when a hybrid integrated circuit for an inverter having a power supply voltage is mounted on a chassis or the like, it is generally mounted via an insulating thin layer. To be However, as described above, since the ground structure is formed on the metal substrate, there is a problem that the metal substrate and the chassis are short-circuited when the above-mentioned insulating thin layer is broken, resulting in a significant decrease in safety. there were.

(D) Means for Solving the Problems The present invention has been made in view of the above-mentioned points.
As shown in the figure, the first and second substrates (1) and (2), the resin layer (3) provided on the first substrate (1), and the desired shape provided on the resin layer (3) A conductive path (5) to which a high power supply voltage is applied and a plurality of circuit elements (6) provided on the conductive path (5) are provided, and an insulating film (4) is provided on the second metal substrate (2). Provide a second metal substrate
(2) The first metal substrate (1) is placed on top of this to solve the problem.

(E) Action In this way, by providing the insulating film (4) on the second metal substrate (2) and arranging the first metal substrate (1) on the film (4), a double structure is obtained. , When mounting on a chassis Since the second metal substrate (2) is interposed between the first metal substrate (1) to which the circuit element (6) is fixed and the chassis, the first metal substrate ( The insulating property of 1) can be improved.

(F) Embodiment The present invention will be described in detail below based on the embodiment shown in FIG.

As shown in FIG. 1, the hybrid integrated circuit of the present invention includes first and second metal substrates (1) and (2), a resin layer (3) provided on the first metal substrate (1), and a resin. A conductive path (5) provided on the layer (3) to which a high power supply voltage is applied, and a circuit element fixed on the conductive path (5)
(6) and an insulating film (4) provided on the second metal substrate (2).

An aluminum substrate having excellent thermal conductivity is used as the first metal substrate (1), and its surface is subjected to insulation treatment by anodic oxidation. The resin layer (3) is made of an epoxy-based or polyimide-based resin, and is formed with a minimum thickness that insulates the first metal substrate (1) and the conductive path (5).

The conductive path (5) is a copper foil adhered on the resin layer (3), the copper foil is exposed to a predetermined pattern, the copper foil other than the pattern is removed by etching to form a conductive path (5) having a desired shape. It is formed. Circuit elements such as integrated circuits, transistors, chip resistors and chip capacitors on or between the conductive paths (5)
(6) is fixed. Also, the conductive path (5) and the first metal substrate (1)
Although not shown, for example, the first metal substrate (1) is provided with a countersunk portion by means such as a drill, and the countersunk portion and a part of the conductive path (5) are connected by a wire or the like, so-called substrate ground. The structure is used to prevent the adverse effects of internal and external noise.

As the second metal substrate (2), an aluminum substrate is used similarly to the first metal substrate (1), and insulation treatment is performed. A polyimide film is used as the insulating film (4), and since the second metal substrate (2) acts as a heat dissipation plate, it is attached thicker than the resin layer (3).

Second metal substrate (2) with insulating film (4) on the surface
In order to protect the circuit element (6) provided on the first metal substrate (1) by arranging the first metal substrate (1) so as to be in close contact therewith,
The case (7) made of a resin material is used for casing.

According to the present invention, the first and second metal substrates (1)
Even when the double structure is used in (2) and the chassis is attached to the chassis, since the insulating film (4) is interposed between the circuit element (6) and the chassis, the second metal substrate (2) and the chassis are not connected. Has a merit that it does not adversely affect the hybrid integrated circuit of the first metal substrate (1).

Further, as shown in FIG. 1, since the size of the first metal substrate (1) is smaller than the size of the second metal substrate (2), the peripheral edge of the first metal substrate (1) and the second metal substrate (1) are A separation distance is provided between the metal substrate (2) and the peripheral edge of the metal substrate (2) to prevent electric discharge or the like that is likely to occur between the first metal substrate (1) and the second metal substrate (2), and to provide insulation. The effect can be further improved.

(G) Effect of the Invention As described above, even if the double structure is attached to the chassis by providing the double structure in which the first metal substrate to which the circuit element is fixed is fixed onto the second metal substrate. Since the insulating film is interposed between the circuit element and the chassis, even if the second metal substrate and the chassis are short-circuited,
It does not adversely affect the hybrid integrated circuit of the first metal substrate, and as shown in FIG. 1, the size of the first metal substrate is smaller than the size of the second metal substrate. Since a separation distance is provided between the edge and the peripheral edge of the second metal substrate, it is possible to suppress electric discharge or the like that is likely to occur between the first metal substrate and the second metal substrate. Has the advantages of higher reliability and improved heat dissipation.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional example. (1) (2) …… first and second metal substrates, (3) …… resin layer, (4) …… insulating film, (5) …… conductive path, (6) …… circuit element, ( 7) …… Case.

Claims (1)

[Scope of utility model registration request] 1. A conductive path having a desired shape is formed on a first metal substrate via an insulating resin layer, a circuit element for high power supply voltage is fixed to a predetermined position on the conductive path, and the conductive path is formed. A mixed integrated circuit having a ground structure for connecting a path and the first metal substrate, wherein the second metal substrate is larger than the first metal substrate on the surface of which the insulating resin layer is provided. A hybrid integrated circuit characterized in that it is fixedly arranged on a metal substrate, and a separation distance is provided between the peripheral edge of the first metal substrate and the peripheral edge of the second metal substrate.