JPH0590404A - Method and apparatus for cutting chip - Google Patents
Method and apparatus for cutting chipInfo
- Publication number
- JPH0590404A JPH0590404A JP27480491A JP27480491A JPH0590404A JP H0590404 A JPH0590404 A JP H0590404A JP 27480491 A JP27480491 A JP 27480491A JP 27480491 A JP27480491 A JP 27480491A JP H0590404 A JPH0590404 A JP H0590404A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- wafer
- chip
- wire saw
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dicing (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、酸化物結晶から固体レ
ーザ発振素子を加工する場合において、結晶ウエハーか
ら正方形で、且つ面取りが施されたチップを製作する方
法及びこの方法に用いるチップ切削装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a square and chamfered chip from a crystal wafer when processing a solid-state laser oscillator from an oxide crystal, and a chip cutting device used in this method. Regarding
【0002】[0002]
【従来の技術】従来、結晶ウエハーの切削加工に際して
は、Nb:YVO4単結晶(以下NYVと略記する)か
らレーザ発振に適した面方位をX線測定で確認の後、ダ
イヤモンドワイヤーソーによって切削速度を0.5mm
/minとして、切削面に冷却用オイルを加えながら厚
さ1.5mmのウエハーに切削加工される。2. Description of the Related Art Conventionally, when cutting a crystal wafer, an Nb: YVO 4 single crystal (hereinafter abbreviated as NYV) is used to confirm a plane orientation suitable for laser oscillation by X-ray measurement, and then a diamond wire saw is used for cutting. Speed 0.5mm
/ Min, a wafer having a thickness of 1.5 mm is cut while adding cooling oil to the cut surface.
【0003】次いで、前記ウェハーの両面を面精度λ/
10以下(λ6328nm)、平行度10秒以内で、厚
さ1mmの光学研磨に仕上げた後、ダイシングマシーン
装置によって3mm角で、厚さ1mmのチップに切断さ
れる。Then, the surface precision λ /
After 10 mm or less (λ6328 nm) and parallelism within 10 seconds, optical polishing with a thickness of 1 mm is performed, and then the chips are cut into 3 mm square chips with a thickness of 1 mm by a dicing machine device.
【0004】[0004]
【発明が解決しようとする課題】レーザ発振用NYVチ
ップには、一般的に光学研磨を施した面に、レーザ発振
波長にあったハードコートならび励起光に対する無反射
コート膜が作成される。In a laser oscillation NYV chip, a hard coat suitable for a laser oscillation wavelength and a non-reflective coating film for excitation light are generally formed on a surface which is optically polished.
【0005】その際、研磨面には、ほこり,油膜,キ
ズ,研磨剤等が一切ない状態でコーティングしなければ
ならない。At this time, the polishing surface must be coated without dust, oil film, scratches, abrasives, etc.
【0006】しかし、チップ面を清浄にするための洗浄
で、チップ面の面取りができていないと、面洗浄に用い
る綿棒等がエッジ部分に引っかかりエッジが欠け、研磨
面にキズを生じさせ、さらに洗浄が不完全になりやすい
ためコーティング膜の接着力が弱まり、これが剥がれの
原因となる。このため、従来は切削後の後処理としてチ
ップに面取り加工を行っていた。However, if the chip surface is not chamfered by the cleaning for cleaning the chip surface, a cotton swab or the like used for the surface cleaning is caught at the edge portion, the edge is chipped, and the polishing surface is scratched. Since the cleaning tends to be incomplete, the adhesive strength of the coating film is weakened, which causes peeling. For this reason, conventionally, the chips have been chamfered as a post-treatment after cutting.
【0007】本発明の目的は、前記課題を解決したチッ
プ切削方法及び装置を提供することにある。An object of the present invention is to provide a chip cutting method and device that solve the above problems.
【0008】[0008]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係るチップ切削方法においては、切削用ワ
イヤーソーを用い、切削と面取りとを同時に行って、ウ
エハーから方形のチップを切り出すチップ切削方法であ
って、ウエハーの対応する両面に断面V型の溝を形成す
る工程と、V型の溝間でウエハーをチップに切離す工程
とを有するものである。In order to achieve the above object, in a chip cutting method according to the present invention, a cutting wire saw is used to perform cutting and chamfering simultaneously to cut a rectangular chip from a wafer. The cutting method includes a step of forming a groove having a V-shaped cross section on the corresponding both surfaces of the wafer, and a step of cutting the wafer into chips between the V-shaped grooves.
【0009】また、チップ切削装置においては、ウエハ
ー切削用のワイヤーソーを有するチップ切削装置であっ
て、ワイヤーソーは、断面V型の切刃を有し、切刃の表
面には微粒子ダイヤモンドが埋込まれたものである。The chip cutting device is a chip cutting device having a wire saw for cutting a wafer, and the wire saw has a cutting edge with a V-shaped cross section, and fine diamond particles are embedded on the surface of the cutting edge. It is embedded.
【0010】[0010]
【作用】ウエハーを溝間で切離せば、面取りが施された
正方形のチップが得られる。When the wafer is cut between the grooves, chamfered square chips are obtained.
【0011】[0011]
【実施例】以下、本発明の一実施例を図により説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【0012】本発明のチップ切削装置のポイントは切削
用ワイヤーソーの形状にあり、その断面は、図1に示す
ように、ワイヤーソー1の表面にダイヤモンド2が埋め
込まれたV字形断面の切刃を有する。The point of the tip cutting device of the present invention is the shape of a wire saw for cutting, and its cross section has a V-shaped cutting edge in which diamond 2 is embedded in the surface of the wire saw 1 as shown in FIG. Have.
【0013】本発明のチップ切削装置には、長さ10m
のワイヤーソー1を切削面が左右にぶれないように取り
付ける。The tip cutting device of the present invention has a length of 10 m.
Attach the wire saw 1 of so that the cutting surface does not shake to the left and right.
【0014】次に図2(a)に示すように、1mmの厚
さに光学研磨されたウエハー4の両面に、厚さ0.3m
mのカバーガラス3を接着剤で固定した後、ダイヤモン
ドワイヤーソーの試料取り付け台に、チップ数量が最も
多く取れる向きに固定後、切削加工を行う。Next, as shown in FIG. 2A, a thickness of 0.3 m is formed on both surfaces of the wafer 4 optically polished to a thickness of 1 mm.
After fixing the cover glass 3 of m with an adhesive, it is fixed on the sample mounting base of the diamond wire saw in the direction in which the largest number of chips can be obtained, and then cutting is performed.
【0015】図2(b)において、切削加工は、加工ウ
エハーの一面をAとし、裏面をBとし、まず、A面につ
いて、ワイヤーソー1の移動速度を10m/minで、
試料へ切り込む速度を0.1mm/minとし、0.8
mmの深さに達したら次の切削に移り、3mm間隔で平
行移動し、ウエハーから外れた所で試料台を90度回転
後、再び前記と同じ操作を行ってA面側にV型溝6を3
mm角の正方形に形成する。In FIG. 2B, in the cutting process, one surface of the processed wafer is A and the back surface is B. First, with respect to the surface A, the moving speed of the wire saw 1 is 10 m / min.
The cutting speed into the sample is 0.1 mm / min, and it is 0.8
When the depth of mm is reached, the next cutting is started, the sample is moved in parallel at 3 mm intervals, the sample table is rotated 90 degrees at the place off the wafer, and the same operation as described above is performed again to form the V-shaped groove 6 on the A side. 3
It is formed into a square of mm square.
【0016】A面が終わったところで加工ウエハーを裏
返し、B面を上にしてA面と同じ位置,間隔で切削を始
め、同じ操作を行い、V型溝7を形成し、個々に切離せ
ば図2(b)に示す面取りのできた状態のチップ5が製
作できる。加工ウエハーのA,B面の全てに3mm角の
正方形ができた後、有機溶剤による洗浄でカバーガラス
3を取り除き、チップ面にほこり,油膜,キズ,接着剤
等の不純物がないことを確認の後、密封容器に保管す
る。When the surface A is finished, the processed wafer is turned upside down, cutting is started at the same position and distance as the surface A with the surface B facing upward, the same operation is performed, and the V-shaped groove 7 is formed. The chamfered chip 5 shown in FIG. 2B can be manufactured. After a square of 3 mm square is formed on all A and B sides of the processed wafer, the cover glass 3 is removed by washing with an organic solvent, and it is confirmed that the chip surface is free of dust, oil film, scratches, and adhesive impurities. Then store in a sealed container.
【0017】[0017]
【発明の効果】本発明によれば、切削後に総面取りのた
めの時間が不要となり、更に研磨面を損傷する要因が低
減することで良品率を向上できる効果を有する。According to the present invention, it is possible to improve the non-defective rate by eliminating the time required for the total chamfering after cutting and reducing the factors that damage the polished surface.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明装置に用いるワイヤーソーの切断面図で
ある。FIG. 1 is a cross-sectional view of a wire saw used in the device of the present invention.
【図2】(a)は、ウエハーにカバーグラスを取付けた
状態、(b)は、切削されたウエハーの切断面図であ
る。FIG. 2A is a state in which a cover glass is attached to the wafer, and FIG. 2B is a sectional view of the cut wafer.
【符号の説明】 1 ワイヤーソー 2 ダイヤモンド 3 カバーガラス 4 ウエハー 5 チップ 6,7 V型溝[Explanation of symbols] 1 wire saw 2 diamond 3 cover glass 4 wafer 5 chip 6,7 V-shaped groove
Claims (2)
りとを同時に行って、ウエハーから方形のチップを切り
出すチップ切削方法であって、 ウエハーの対応する両面に断面V型の溝を形成する工程
と、 V型の溝間でウエハーをチップに切離す工程とを有する
ことを特徴とするチップ切削方法。1. A chip cutting method for cutting a rectangular chip from a wafer by simultaneously performing cutting and chamfering using a cutting wire saw, wherein a groove having a V-shaped cross section is formed on both corresponding surfaces of the wafer. And a step of separating the wafer into chips between the V-shaped grooves.
チップ切削装置であって、 ワイヤーソーは、断面V型の切刃を有し、 切刃の表面には微粒子ダイヤモンドが埋込まれたもので
あることを特徴とするチップ切削装置。2. A chip cutting device having a wire saw for wafer cutting, wherein the wire saw has a V-shaped cutting edge, and fine diamond particles are embedded in the surface of the cutting edge. A chip cutting device characterized by the above.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27480491A JPH0590404A (en) | 1991-09-26 | 1991-09-26 | Method and apparatus for cutting chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27480491A JPH0590404A (en) | 1991-09-26 | 1991-09-26 | Method and apparatus for cutting chip |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0590404A true JPH0590404A (en) | 1993-04-09 |
Family
ID=17546801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27480491A Pending JPH0590404A (en) | 1991-09-26 | 1991-09-26 | Method and apparatus for cutting chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0590404A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003056613A1 (en) * | 2001-12-25 | 2003-07-10 | Hitachi, Ltd. | Semiconductor device and method for fabricating the same |
CN100355030C (en) * | 2002-09-02 | 2007-12-12 | 新光电气工业株式会社 | Semiconductor chip and manufacturing method thereof |
CN114800212A (en) * | 2022-04-22 | 2022-07-29 | 东方日升新能源股份有限公司 | Battery silicon chip for HIT and preparation method thereof |
-
1991
- 1991-09-26 JP JP27480491A patent/JPH0590404A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003056613A1 (en) * | 2001-12-25 | 2003-07-10 | Hitachi, Ltd. | Semiconductor device and method for fabricating the same |
CN100355030C (en) * | 2002-09-02 | 2007-12-12 | 新光电气工业株式会社 | Semiconductor chip and manufacturing method thereof |
CN114800212A (en) * | 2022-04-22 | 2022-07-29 | 东方日升新能源股份有限公司 | Battery silicon chip for HIT and preparation method thereof |
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