JPH058855B2 - - Google Patents
Info
- Publication number
- JPH058855B2 JPH058855B2 JP61154391A JP15439186A JPH058855B2 JP H058855 B2 JPH058855 B2 JP H058855B2 JP 61154391 A JP61154391 A JP 61154391A JP 15439186 A JP15439186 A JP 15439186A JP H058855 B2 JPH058855 B2 JP H058855B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- exposure
- mirror
- synchrotron radiation
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005469 synchrotron radiation Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＸ線露光装置、さらに詳しくは大面積
のＸ線マスクパターンを短時間に均一転写するこ
とのできるＸ線露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray exposure apparatus, and more particularly to an X-ray exposure apparatus that can uniformly transfer a large area X-ray mask pattern in a short time.
シンクロトロン放射光を使用するＸ線露光装置
の原理は第２図に示すように、蓄積リング１にお
けるシンクロトロン放射光源２より発せられたシ
ンクロトロン放射光３をＸ線吸収材によるマスク
パターンが描かれたＸ線マスク４を通して被加工
物６のレジスト膜５にマスクパターンを転写する
ものである。
The principle of an X-ray exposure apparatus using synchrotron radiation is, as shown in Figure 2, that synchrotron radiation 3 emitted from a synchrotron radiation light source 2 in a storage ring 1 is drawn by a mask pattern made of an X-ray absorbing material. The mask pattern is transferred to the resist film 5 of the workpiece 6 through the X-ray mask 4 .
シンクロトロン放射光３は電子軌道面に対して
平行な方向には均一であるが、垂直方向には鋭い
角度分布をもつため放射光源２から約10ｍ離れた
位置でも幅数mmの均一露光域しか得られない。従
来、均一露光域を拡大する方法として例えば1983
年に発行された刊行物ニユークリア・インストル
メンツ・アンド・メソツズ（Nuclear
Instruments and Method）208巻281〜286頁に
開示されている第２図に示すような振動するＸ線
ミラーによる方法が広く用いられている。第２図
において、シンクロトロン放射光３は振動するＸ
線ミラー８によつて上下方向に拡大され、Ｘ線マ
スク４を通してＸ線レジスト５に照射される。 Synchrotron radiation 3 is uniform in the direction parallel to the electron orbital plane, but has a sharp angular distribution in the vertical direction, so even at a position approximately 10 meters away from the synchrotron radiation source 2, the uniform exposure area is only a few mm wide. I can't get it. Conventionally, as a method to expand the uniform exposure area, for example, in 1983
Nuclear Instruments and Methods, a publication published in
A method using a vibrating X-ray mirror as shown in FIG. 2, disclosed in Vol. 208, pp. 281-286, is widely used. In Fig. 2, the synchrotron radiation 3 oscillates with
The radiation is magnified in the vertical direction by the ray mirror 8 and irradiated onto the X-ray resist 5 through the X-ray mask 4.
また、Ｘ線のシヤツターとしては通常シンクロ
トロン放射光利用施設と同様に鉛等のブロツクを
上下動させる構造のものが使用されていた。 Furthermore, the X-ray shutter used was one in which a block made of lead or the like was moved up and down, similar to facilities that utilize synchrotron radiation.
ところで、シンクロトロン放射光の強度は従来
の電子線励起型Ｘ線源から発するＸ線の10〜100
倍にも及び、レジスト面上で100ｍＷ／cm2程度の
線量率を得ることができる。このような場合、感
度の高いＸ線レジストを使用すると露光時間は１
秒〜５秒程度となるが、従来用いられているＸ線
シヤツターは動作時間が数秒であるためこのよう
な短時間の露光を行うことができないという欠点
があつた。
By the way, the intensity of synchrotron radiation is 10 to 100 times higher than that of the X-rays emitted from a conventional electron beam-excited X-ray source.
It is possible to obtain a dose rate of about 100 mW/cm 2 on the resist surface. In such cases, if a highly sensitive X-ray resist is used, the exposure time can be reduced to 1
However, conventionally used X-ray shutters have a disadvantage in that they cannot perform such short exposures because their operating time is several seconds.
本発明の目的はこのような従来の問題点を除去
し大面積、短時間の露光を行い得るＸ線露光装置
を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide an X-ray exposure apparatus that can eliminate these conventional problems and perform exposure over a large area in a short time.
本発明はシンクロトロン放射光源から放射され
るシンクロトロン放射光を、振動するＸ線ミラー
で反射させ、Ｘ線マスクを通して反射光をＸ線レ
ジストが塗布された被加工物上に照射するＸ線露
光装置において、前記シンクロトロン放射光源と
前記Ｘ線ミラーとの間に高速軟Ｘ線シヤツターを
設け、前記Ｘ線ミラーに連動させて前記Ｘ線シヤ
ツターを、動作させる露光制御装置を有すること
を特徴とするＸ線露光装置である。
The present invention is an X-ray exposure method in which synchrotron radiation light emitted from a synchrotron radiation light source is reflected by a vibrating X-ray mirror, and the reflected light is irradiated onto a workpiece coated with an X-ray resist through an X-ray mask. The apparatus is characterized in that a high-speed soft X-ray shutter is provided between the synchrotron radiation light source and the X-ray mirror, and includes an exposure control device that operates the X-ray shutter in conjunction with the X-ray mirror. This is an X-ray exposure device.
以下本発明の構成について図面を参照しながら
説明する。
The configuration of the present invention will be explained below with reference to the drawings.
第１図は本発明に係るＸ線露光方法の実施例を
示す概略図である。基本的構成は第２図とほぼ同
じである。同一機構部分には同一番号を付してそ
の説明を省略する。ただし、本発明ではシンクロ
トロン放射光源２と振動するＸ線ミラー８の間に
高速軟Ｘ線シヤツター１１を設置し、上記Ｘ線ミ
ラー８と連動させて上記高速軟Ｘ線シヤツター１
１を動作させる露光制御装置１３を有している。 FIG. 1 is a schematic diagram showing an embodiment of the X-ray exposure method according to the present invention. The basic configuration is almost the same as in FIG. Identical mechanical parts are given the same numbers and their explanations will be omitted. However, in the present invention, a high-speed soft X-ray shutter 11 is installed between the synchrotron radiation light source 2 and the vibrating X-ray mirror 8, and in conjunction with the X-ray mirror 8, the high-speed soft X-ray shutter 1
It has an exposure control device 13 that operates 1.
Ｘ線露光に使用されるＸ線は波長５オングスト
ローム以上の軟Ｘ線であるため、シヤツターの材
料としてステンレス鋼、銅、タングステン、タン
タル等の金属板を使用すれば0.5mm以下で板厚で
Ｘ線を手段することができる。また、シンクロト
ロン放射光源２とＸ線ミラー８間にシヤツター１
１を設置すればＸ線シヤツター１１の上下方向の
移動距離は10mm程度で十分である。そのため、シ
ヤツターの小型、軽量にでき、動作時間を0.2秒
以下とすることは容易である。 The X-rays used for X-ray exposure are soft X-rays with a wavelength of 5 angstroms or more, so if a metal plate such as stainless steel, copper, tungsten, tantalum, etc. is used as the material for the shutter, the thickness of the shutter will be less than 0.5 mm. line can be used. In addition, a shutter 1 is installed between the synchrotron radiation light source 2 and the X-ray mirror 8.
1, it is sufficient for the vertical movement distance of the X-ray shutter 11 to be about 10 mm. Therefore, it is easy to make the shutter small and lightweight, and to reduce the operating time to 0.2 seconds or less.
また、振動するＸせミラー８によるＸ線の走査
は第３図に示すように、均一露光域を得るために
は上下にかなり余裕をもつて行う必要がある。ミ
ラー振動の周波数は装置の振動を軽減するために
も小さくした方が望ましく、１〜数Hzとするのが
一般的である。第３図は１Hzの正弦曲線に沿つて
振動させた場合であるが時間軸ａからｂ，ｃから
ｄの部分はミラーの動きが直線的でないため露光
には使用されず、この間にシヤツターの開閉を行
えば露光に影響を与えない。実際には第１図に示
すようにミラー駆動装置１４から露光制御装置１
３にミラー位置信号１６を取り込み、ミラーが第
３図ａまたはｃの位置にきたときにシヤツター開
閉信号１５をシヤツター駆動装置１２に送り、シ
ヤツター１１を開閉する。このようにすればシヤ
ツター１１の開閉はａからｂまたはｃからｄの間
に行われるので露光時間は露光面上の位置によら
ず一定となる。 Furthermore, as shown in FIG. 3, the X-ray scanning by the vibrating X-flip mirror 8 must be performed with considerable vertical margin in order to obtain a uniform exposure area. It is desirable that the frequency of the mirror vibration is low in order to reduce the vibration of the device, and the frequency is generally 1 to several Hz. Figure 3 shows the case where the mirror is vibrated along a 1Hz sine curve, but the mirror movement from time axis a to b and from c to d is not linear, so it is not used for exposure, and during this time the shutter is opened and closed. If you do this, it will not affect the exposure. Actually, as shown in FIG. 1, from the mirror drive device 14 to the exposure control device 1
3 receives the mirror position signal 16, and when the mirror is at the position shown in FIG. In this way, the shutter 11 is opened and closed between a and b or between c and d, so that the exposure time remains constant regardless of the position on the exposure surface.
以上述べたようにＸ線ミラー８に連動させて高
速軟Ｘ線シヤツター１１を開閉制御を行う露光制
御装置を用いて均一な短時間露光が行えることは
明らかであり、本発明の目的は達成される。 As described above, it is clear that uniform short-time exposure can be performed using the exposure control device that controls the opening and closing of the high-speed soft X-ray shutter 11 in conjunction with the X-ray mirror 8, and the object of the present invention has been achieved. Ru.
以上詳述した如く本発明によれば、シンクロト
ロン放射光を用いて大面積の均一露光を行う際、
露光の均一性を損なうことなく短時間の露光がで
きるという顕著な効果を有するＸ線露光装置を提
供できるものである。
As detailed above, according to the present invention, when uniformly exposing a large area using synchrotron radiation,
It is possible to provide an X-ray exposure apparatus that has the remarkable effect of being able to perform short-time exposure without impairing the uniformity of exposure.
第１図は本発明に係るＸ線露光装置の一実施例
を示す概略図、第２図はシンクロトロン放射光を
用いた露光の原理図、第３図はミラーの振動の一
例を示す図である。
３……シンクロトロン放射光、４……Ｘ線マス
ク、５……Ｘ線レジスト、６……被加工物、８…
…Ｘ線ミラー、１１……Ｘ線シヤツター、１２…
…シヤツター駆動装置、１３……露光制御装置、
１４……ミラー駆動装置、１５……シヤツター開
閉信号、１６……ミラー位置信号。
Fig. 1 is a schematic diagram showing an embodiment of the X-ray exposure apparatus according to the present invention, Fig. 2 is a diagram showing the principle of exposure using synchrotron radiation, and Fig. 3 is a diagram showing an example of vibration of a mirror. be. 3... Synchrotron radiation light, 4... X-ray mask, 5... X-ray resist, 6... Workpiece, 8...
...X-ray mirror, 11...X-ray shutter, 12...
...shutter drive device, 13...exposure control device,
14...Mirror drive device, 15...Shutter opening/closing signal, 16...Mirror position signal.
Claims (1)
クロトロン放射光を、振動するＸ線ミラーで反射
させ、Ｘ線マスクを通してその反射光をＸ線レジ
ストが塗布された被加工物上に照射するＸ線露光
装置において、前記シンクロトロン放射光源と前
記Ｘ線ミラーとの間に高速Ｘ線シヤツターを設
け、前記Ｘ線ミラーに連動させて前記Ｘ線シヤツ
ターを動作させる露光制御装置を有することを特
徴とするＸ線露光装置。1. An X-ray exposure device that reflects synchrotron radiation light emitted from a synchrotron radiation light source with a vibrating X-ray mirror, and irradiates the reflected light onto a workpiece coated with an X-ray resist through an X-ray mask. A high-speed X-ray shutter is provided between the synchrotron radiation light source and the X-ray mirror, and an exposure control device is provided that operates the X-ray shutter in conjunction with the X-ray mirror. Exposure equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61154391A JPS639931A (en) | 1986-06-30 | 1986-06-30 | X-ray exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61154391A JPS639931A (en) | 1986-06-30 | 1986-06-30 | X-ray exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS639931A JPS639931A (en) | 1988-01-16 |
| JPH058855B2 true JPH058855B2 (en) | 1993-02-03 |
Family
ID=15583111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61154391A Granted JPS639931A (en) | 1986-06-30 | 1986-06-30 | X-ray exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS639931A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63301000A (en) * | 1987-06-01 | 1988-12-08 | Canon Inc | Exposing device |
| JPH0435016A (en) * | 1990-05-31 | 1992-02-05 | Toshiba Corp | Radiation exposure device |
-
1986
- 1986-06-30 JP JP61154391A patent/JPS639931A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639931A (en) | 1988-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4945552A (en) | Imaging system for obtaining X-ray energy subtraction images | |
| DE59603163D1 (en) | MICROFOCUS X-RAY DEVICE | |
| EP0109193B1 (en) | X-ray lithographic system | |
| JPH0393197A (en) | X-ray irradiating apparatus | |
| JPH058855B2 (en) | ||
| JPS629632A (en) | Projecting and exposing device | |
| JP2980397B2 (en) | X-ray exposure equipment | |
| JP2623128B2 (en) | Exposure equipment | |
| EP0387038A2 (en) | Reflecting device and pattern transfer apparatus using the same | |
| JPS6132998A (en) | X-ray transcriber | |
| JPS5645024A (en) | Lithography apparatus | |
| JPS647619A (en) | X-ray aligner | |
| JPH0572149A (en) | X-ray measuring device | |
| JPH01244400A (en) | Exposure device | |
| JPH034200A (en) | Radiant light exposure device | |
| JPH065496A (en) | Film for improving exposure uniformity | |
| JPH022999A (en) | X-ray exposure device | |
| JPH0246717A (en) | X-ray exposure | |
| JPS62291027A (en) | X-ray exposure device | |
| JPH0445513A (en) | Projection device and alignment method | |
| JP2749937B2 (en) | Exposure equipment | |
| JP2891737B2 (en) | Reflection device and transfer device | |
| JPS57201267A (en) | Electrophotographic device | |
| JPH02202010A (en) | X-ray exposing method | |
| JPH05175103A (en) | X-ray exposure device |