JPS63301000A - Exposing device - Google Patents
Exposing deviceInfo
- Publication number
- JPS63301000A JPS63301000A JP62134939A JP13493987A JPS63301000A JP S63301000 A JPS63301000 A JP S63301000A JP 62134939 A JP62134939 A JP 62134939A JP 13493987 A JP13493987 A JP 13493987A JP S63301000 A JPS63301000 A JP S63301000A
- Authority
- JP
- Japan
- Prior art keywords
- reflecting mirror
- synchrotron radiation
- range
- exposure
- original
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005469 synchrotron radiation Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はシンクロトロン放射光を利用した露光装置に係
り、特に大面積マスクパターンを高精度で均一に転写す
ることができる露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure apparatus that uses synchrotron radiation, and particularly to an exposure apparatus that can uniformly transfer a large area mask pattern with high precision.
[従来の技術]
従来、シンクロトロンからの放射光を光源に用いた露光
装置においては、同放射光の指向性が強いためマスク上
に直接投影すると帯状の放射光しか得られないので、照
射範囲を拡げるために光路中に反射鏡を設けてこれを微
少揺動させることによって帯状の放射光を鉛直方向に往
復走査させるという手法が考えられている。[Prior Art] Conventionally, in exposure equipment that uses synchrotron synchrotron radiation as a light source, since the synchrotron radiation has strong directionality, when directly projected onto a mask, only a band-shaped radiation beam is obtained. In order to spread the light, a method has been considered in which a reflecting mirror is provided in the optical path and the mirror is slightly oscillated to cause the band-shaped emitted light to reciprocate in the vertical direction.
[発明が解決しようとする問題点]
しかしながら、上記従来例では、反射鏡のもつ慣性の影
響でシンクロトロン放射光の走査範囲内での露光量の分
布は均一にはならないため露光むらを生じるという欠点
があった。[Problems to be Solved by the Invention] However, in the above conventional example, the distribution of the exposure amount within the scanning range of the synchrotron radiation light is not uniform due to the influence of the inertia of the reflecting mirror, resulting in uneven exposure. There were drawbacks.
本発明の目的は、この従来例の欠点に鑑み、シンクロト
ロン放射光を光源とする露光装置において、露光量の均
一化を図り露光むらをなくすことにある。In view of this drawback of the conventional example, an object of the present invention is to equalize the amount of exposure and eliminate uneven exposure in an exposure apparatus using synchrotron radiation as a light source.
[問題点を解決するための手段]
上記目的を達成するため本発明では、揺動する反射鏡に
よって反射させることによりシンクロトロン放射光で原
版を走査し該原版のパターンを基板上に転写する露光装
置において、シンクロトロン放射光による走査範囲が該
原版のパターン領域外の所定の範囲にまで及ぶようにし
ている。[Means for Solving the Problems] In order to achieve the above object, the present invention provides an exposure method in which a pattern of the original is transferred onto a substrate by scanning an original with synchrotron radiation light by reflecting it with an oscillating reflecting mirror. In the apparatus, the scanning range by synchrotron radiation light extends to a predetermined range outside the pattern area of the original plate.
[作用コ
この構成において、シンクロトロン放射光の露光量は反
射鏡の慣性等のため走査範囲の中央部はど均一であり両
端部分において不均一となるが、走査範囲が上記所定範
囲にまで及ぶため、原版のパターン領域においては走査
範囲の比較的中央のしたがって比較的露光量が均一とな
る部分の範囲のシンクロトロン放射光が照射される。[Operation] In this configuration, the exposure amount of synchrotron radiation light is uniform in the center of the scanning range and non-uniform at both ends due to the inertia of the reflecting mirror, but the scanning range extends to the above-mentioned predetermined range. Therefore, in the pattern area of the original plate, synchrotron radiation light is irradiated in a relatively central area of the scanning range, and therefore in a portion where the exposure amount is relatively uniform.
すなわち上記所定範囲は、原版のパターン領域における
露光量が所望の均一さになるように決められ、これによ
り、むらのない均一な露光が図られる。That is, the predetermined range is determined so that the exposure amount in the pattern area of the original plate becomes a desired uniformity, thereby achieving even and uniform exposure.
[実施例] 以下、図面を用いて本発明の詳細な説明する。[Example] Hereinafter, the present invention will be explained in detail using the drawings.
第1図は本発明の一実施例に係る露光装置におけるシン
クロトロン放射光の走査方法を示す説明図である。FIG. 1 is an explanatory diagram showing a synchrotron radiation scanning method in an exposure apparatus according to an embodiment of the present invention.
同図において、反射鏡4に入射したシンクロトロン放射
光5は反射鏡4で反射されて反射光3となるが、このと
き不図示の揺動手段により反射鏡4が揺動されて反射光
3によりマスク露光範囲2を含む走査範囲1が走査され
る。この走査範囲1は、マスク露光範囲2を鉛直方向に
拡張した領域に対応する。このようにして反射光3によ
りマスク露光範囲内のパターンは不図示の転写手段を介
して不図示のウェハ上に転写される。In the figure, synchrotron radiation 5 incident on a reflecting mirror 4 is reflected by the reflecting mirror 4 and becomes reflected light 3. At this time, the reflecting mirror 4 is swung by a swinging means (not shown), and the reflected light 3 Accordingly, a scanning range 1 including a mask exposure range 2 is scanned. This scanning range 1 corresponds to an area obtained by extending the mask exposure range 2 in the vertical direction. In this way, the pattern within the mask exposure range is transferred by the reflected light 3 onto a wafer (not shown) via a transfer means (not shown).
第2図は第1図における走査範囲1内で反射鏡4を正弦
波で振動させた場合における走査方向位置と露光量との
関係を示すグラフである。同図に示すように、マスク露
光範囲2は図示のように走査範囲1の比較的中央部分で
あって露光量変化が少ない部分に相当する。したがって
、この方法によれば、マスク露光範囲内において露光量
の均一化を図ることができる。FIG. 2 is a graph showing the relationship between the position in the scanning direction and the exposure amount when the reflecting mirror 4 is vibrated in a sinusoidal manner within the scanning range 1 in FIG. As shown in the figure, the mask exposure range 2 corresponds to a relatively central part of the scanning range 1 as shown in the figure, and corresponds to a part where the exposure amount changes little. Therefore, according to this method, the exposure amount can be made uniform within the mask exposure range.
なお、上述においては反射鏡4を正弦波で振動させた例
を述べたが、これに限らず、例えば回転運動等を含むよ
うな動きで反射鏡4を動作させるようにしてもよい。In the above description, an example has been described in which the reflecting mirror 4 is vibrated with a sine wave, but the present invention is not limited to this, and the reflecting mirror 4 may be operated with a movement that includes, for example, rotational movement.
[発明の効果]
以上説明したように、本発明によれば、シンクロトロン
放射光を光源とした露光装置において、原版例えばマス
クの露光範囲内における露光量を均一化してむらのない
露光を行なうことができる。[Effects of the Invention] As explained above, according to the present invention, in an exposure apparatus using synchrotron radiation as a light source, the exposure amount within the exposure range of an original plate, for example, a mask, can be made uniform to perform even exposure. Can be done.
第1図は、本発明の一実施例に係る露光装置におけるシ
ンクロトロン放射光の走査方法を示す説明図、そして
第2図は、第1図のシンクロトロン放射光走査範囲にお
ける露光量と露光位置との関係を示すグラフである。
1:走査範囲、
2:マスク露光範囲
3:反射光、
4:反射鏡、
5ニシンクロトロン放射光。
特許出願人 キャノン株式会社
代理人 弁理士 伊 東 哲 也
代理人 弁理士 伊 東 辰 雄
5・ンンクロYロンぶ1寸光。
第1図
十−
食
燭
第2図FIG. 1 is an explanatory diagram showing a synchrotron radiation scanning method in an exposure apparatus according to an embodiment of the present invention, and FIG. 2 shows the exposure amount and exposure position in the synchrotron radiation scanning range of FIG. 1. It is a graph showing the relationship between 1: Scanning range, 2: Mask exposure range, 3: Reflected light, 4: Reflector, 5 Synchrotron radiation light. Patent Applicant Canon Co., Ltd. Representative Patent Attorney Tetsuya Ito Representative Patent Attorney Tatsuo Ito Figure 1-10- Food candles Figure 2
Claims (2)
射鏡に所定の運動をさせることにより該反射鏡により反
射されるシンクロトロン放射光をして原版上を所定方向
にかつ該原版のパターン領域外の所定範囲にまで走査範
囲が及ぶように走査させる反射鏡駆動手段とを具備し、
該反射鏡駆動手段によって原版上を走査するシンクロト
ロン放射光により該原版のパターンの像を基板上に投影
することを特徴とする露光装置。(1) A reflecting mirror that reflects synchrotron radiation; and by causing the reflecting mirror to move in a predetermined manner, the synchrotron radiation reflected by the reflecting mirror is directed onto the original in a predetermined direction and into a pattern on the original. and reflector driving means for scanning so that the scanning range extends to a predetermined range outside the area,
An exposure apparatus characterized in that an image of a pattern of the original is projected onto a substrate by synchrotron radiation light that is scanned over the original by the reflecting mirror drive means.
運動または正弦波での振動を含む特許請求の範囲第1項
記載の露光装置。(2) The exposure apparatus according to claim 1, wherein the movement of the reflecting mirror by the reflecting mirror driving means includes rotational movement or sinusoidal vibration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62134939A JPS63301000A (en) | 1987-06-01 | 1987-06-01 | Exposing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62134939A JPS63301000A (en) | 1987-06-01 | 1987-06-01 | Exposing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63301000A true JPS63301000A (en) | 1988-12-08 |
Family
ID=15140087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62134939A Pending JPS63301000A (en) | 1987-06-01 | 1987-06-01 | Exposing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63301000A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58118999A (en) * | 1981-12-31 | 1983-07-15 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Apparatus for uniform irradiation in two- dimensional area |
JPS639931A (en) * | 1986-06-30 | 1988-01-16 | Nec Corp | X-ray exposure device |
-
1987
- 1987-06-01 JP JP62134939A patent/JPS63301000A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58118999A (en) * | 1981-12-31 | 1983-07-15 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Apparatus for uniform irradiation in two- dimensional area |
JPS639931A (en) * | 1986-06-30 | 1988-01-16 | Nec Corp | X-ray exposure device |
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