JPH0445513A - Projection device and alignment method - Google Patents

Abstract

PURPOSE:To improve the alignment accuracy and reduce aligning time by separately putting components on different frames and, when the component near a beam generating source is operated, simultaneously operating the component far from the beam generating source. CONSTITUTION:At the time of alignment, the second and third frames 16 and 20 can be operated when the first frame 11 is operated and the third frame 20 and, at the same time, the first and second monochroic crystals 21 and 22 in a monochromator 23 and a single crystal 27 and semiconductor wafer 29 on the third frame 20 can be operated when the second frame 16 is operated. Therefore, each component can be arranged in order when a guide line and rotating center are set. Moreover, when a component near a synchrotron 13 is operated, another component far from the synchrotron 13 can also be operated simultaneously.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a projection device and an alignment method used, for example, in an X-ray lithography step in an LSI manufacturing process.

[Prior Art] Conventionally, this type of projection apparatus has been constructed as shown in FIG. This will be briefly explained based on the figure. In the figure, reference numeral 1 is a storage ring, 2 is a monochromator, 3 is a sample chamber, 4 is a slit, 5 is a monochrome crystal, and 6 is a synchrotron radiation beam.

In the projection device configured in this way, the synchrotron radiation 6 generated in the storage ring 1 is shaped by the slit 4, then monochromated by the monochrome crystal in the monochromator 2, and introduced into the sample chamber 3. The beamline can be aligned. Note that this alignment is performed without disturbing the optical path because each component such as the monochromator 2 and the sample chamber 3 can operate independently of each other.

[Problem to be solved by the invention]

By the way, this type of projection device and alignment method only has the function of independently operating each component such as the monochromator 2 and sample chamber 3 during alignment, and as a result, the guideline and center of rotation are not constant. In particular, there was a problem in that the alignment error became large at the start of the beam line, and the alignment accuracy decreased. Additionally, the fact that each component only has the ability to operate independently during alignment is that when a component on the near side of storage ring 1 is operated, it is necessary to operate a component on the far side. Another problem was that it took a lot of time.

The present invention has been made in view of these circumstances, and provides a projection device and an alignment method that can improve alignment precision and shorten the time spent on alignment.

[Means to solve the problem]

The projection device according to the present invention includes a first mount that operates with a beam generation source as a reference point, a second mount that is provided on the first mount and operates with the opening of a first slit as a reference point, and a second mount that operates with a beam generation source as a reference point. a third mount that operates with an operable monochromator provided on the mount and containing a monochrome crystal as a reference part;
A second slit provided on the third mount and provided on the downstream side of the beam of the monochromator, and a single crystal provided on the beam downstream side of the second slit and operably provided on the third mount. The second driving means is provided on the downstream side of the beam of the first driving means and is movably provided on a third pedestal to mount the projection target member.

Further, an alignment method according to another aspect of the present invention includes retreating the monochrome crystal in advance to a position different from the beam trajectory,
The second slit is set using the opening of the first slit as a reference point so that the beam passes through the monochromator and reaches the beam counter.
A step of operating the mount, a step of operating the first mount using the beam generation source as a reference point so that the intensity of the beam reaching the beam counter is maximized, and a step of moving the monochrome crystal forward on the beam trajectory, a second step of operating the monochromator so that the beam reaches the beam counter;
positioning a third slit in place of the projection member on the driving means, operating the monochrome crystal so that the beam passes through the opening of the third slit and reaching the beam counter; A fourth slit is positioned in place of the crystal, and the monochrome crystal is used as a reference part to pass through the fourth slit and the second slit opening.
A process of operating the frame, a process of aligning the opening of the third slit and the opening of the fourth slit by slightly moving the fourth slit using the monochrome crystal as a reference part, and a process of aligning the opening of the third slit with the opening of the fourth slit, and replacing the fourth slit with a single crystal. After correcting the inclination of the single crystal axis by positioning the single crystal on the first driving means and rotating the single crystal, the single crystal is moved horizontally and vertically so that it passes through the opening of the fourth slit and reaches the beam counter. positioning the semiconductor wafer in place of the third slit, and positioning the semiconductor wafer in place of the first slit.
After positioning the fifth slit having an opening and operating the monochrome crystal so that the beam passing through the two openings of the fifth slit irradiates the first alignment mark, the projection member is placed in the first alignment mark instead of the fourth slit. The projection target member is positioned on the driving means and operated so that the beam emitted from the single crystal irradiates the second alignment mark.

[For production]

In the present invention and another invention of the present invention, the second mount and the third mount can be operated by the operation of the first mount during alignment, and the third mount can be operated by the operation of the second mount. , the monochrome crystal in the morochromator, the single crystal on the third mount, and the projected member can be operated.

〔Example〕

EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure.

FIG. 1 is a perspective view schematically showing a projection apparatus according to the invention, and FIG. 2 is a perspective view showing a goniometer of the projection apparatus according to the invention. In the same figure, the reference numeral 11 indicates a first frame operated by a goniometer 15 with the bending magnet 14 of a synchrotron 13 serving as a beam 12 generation source as a reference, and 16 indicates this first frame 1.
A second mount 20 is provided on the second mount 16 and is operated by a goniometer 19 using the pinhole 18 of the first sleeve 17 as a reference point. A third frame 25 is rotated by a goniometer 24 with an operable monochromator 23 having a built-in as a reference part.
A second slit 26 is provided on the beam downstream side of the monochromator 23 and is provided on the beam downstream side of the second slit 25 and is provided on the third mount 20.
A goniometer as a first driving means on which a single crystal 27 is operably provided and mounted; 28 is this goniometer 2;
This is a goniometer as a second driving means, which is provided on the downstream side of the beam of No. 6 and on which a semiconductor wafer 29 as a projection target member is mounted movably on the third mount 20. Further, 30 and 31 are the first monochrome crystal 21
and a goniometer that drives the second monochrome crystal 22. It is assumed that each goniometer has both a rotation function and a forward/backward movement function. Further, arrows in the figure indicate the direction of operation of each component.

In the projection apparatus configured in this manner, the second mount 16 and the third mount 20 can be operated by the operation of the first mount 11 during alignment, and the third mount 20 can be operated by the operation of the second mount 16. The first monochrome crystal 21 and the second monochrome crystal 22 in the monochromator 23 and the single crystal 2 on the third mount 20 can be
7 and the semiconductor wafer 29 can be operated.

Therefore, in this embodiment, each component can be aligned by setting a guideline or a center of rotation (reference part).

Furthermore, in this embodiment, when the components near the synchrotron 13 as a light source are operated, the components far away can also be operated at the same time.

Next, an alignment method according to another aspect of the present invention will be explained using FIGS. 3 to 7.

(2) In FIG. 3, the beam 53 emitted from the bending magnet 52 of the synchrotron 51 passes through the pinhole 55 of the first slit 54 and enters the monochromator 56. Here, the monochrome crystal 57 in the monochromator 56 is moved back to a different position from the trajectory of the beam 53 in advance, and the pinhole 55 is used as a reference part so that the beam 53 passes through the monochromator 56 and reaches the scintillation counter 58. The second frame 16 (shown in FIG. 1) is moved in the direction indicated by the arrow in FIG. 1(a).

At this time, adjustment is made so that the count of the scintillation counter 58 becomes maximum. In addition, if the counter count value is extremely large (> 10000 counts/5ec),
Insert an absorber as appropriate. Then, as shown by the broken line in FIG. 1 (bl), the first mount 11 (shown in FIG. 1) is operated using the bending magnet 52 as a reference part to adjust the beam intensity to the maximum.

(2) In FIG. 4, the monochrome crystal 57 in the monochromator 56 is advanced onto the beam trajectory.

Then, the monochromator 56 is slightly moved in the direction shown in the figure (al) so that the beam 53 reaches the scintillation counter 58, and the beam 53 is adjusted so that it is incident on the entire crystal plane of the monochrome crystal 57, and the Bragg condition The incident angle of the beam 53 is adjusted so that Incidentally, the position of the scintillation counter 58 is set to correspond to the height change of the beam 53. In the same figure (C), the third slit 59 is positioned in place of the semiconductor wafer 29 (not shown), and this The monochrome crystal 57 is slightly moved in the direction shown by the arrow so as to pass through the pinhole 60 of the third slit 59 and reach the scintillation counter 58.The reference numeral 61 drives the single crystal 27 (shown in FIG. 1). It is a goniometer.

■ In Figure 5, as shown in the figure (δ), the single crystal 2
7 (shown in FIG. 1), and the third mount 20 ( (shown in FIG. 1). At this time, the count value of the scintillation counter 58 is adjusted to the maximum value in response to the rotational movement of the goniometer 24 (shown in FIG. 1) about the monochrome crystal 57. Next, in the same figure (bl), goniometer 2
By slightly moving the center point O (pinhole 63) of 4, the pinhole 63 of the fourth slit 62 and the third slit 5
9. Align the pinhole 60. At this time, the goniometers 26 and 28 (shown in FIG. 1) are set at an angle α.
Only β is operated at the same time so that the position of the pinhole 65 does not change.

Also, the point where the beam intensity is maximum is detected.

■ In FIG. 6, as shown in FIG. 6(a), a single crystal 27 is connected to the goniometer 26 (
1), and the single crystal 27 is rotated by the goniometer 26 to correct the inclination of the single crystal axis and make it vertical.

The monocrystalline 27 in the horizontal direction indicated by the reference numeral 67 in FIG.
a slightly moved so that the crystal plane is parallel to the beam 53,
Adjust so that half of the beam diameter is hidden. Then, the single crystal 27b is slightly moved in the vertical direction as shown by the reference numeral 68 in FIG. .

■ In Fig. 7, the fifth slit 71 having a plurality of pinholes 69,70 is inserted into the first
The semiconductor wafer 29 is positioned in place of the slit 54, and the semiconductor wafer 29 is positioned in place of the third slit 59. At this time, the beam 5 passing through the two pinholes 69.70
3 is diffracted by the monochrome crystal 57 and the single crystal 27 and reaches the semiconductor wafer 29. Then, the alignment mark 7 on the mask pattern drawn on the monochrome crystal 57
Irradiate 2. At this time, the position of the monochrome crystal 57 is finely adjusted as shown by the arrow in FIG. next,
The alignment mark 73 on the semiconductor wafer 29 is irradiated as shown in FIG. At this time, pinhole 69.
The semiconductor wafer 29 is finely adjusted so that the beam 53 passing through the alignment mark 70 illuminates the center of the alignment mark 73 .

In this way, global alignment is completed, but if higher precision alignment is required, the heterodyne method is used as appropriate.

In this embodiment, one slit is used, but in the present invention, two slits may be used to improve directivity.

In addition, although this example shows an example in which a synchrotron is used, the present invention is not limited to this.
It can be applied to those using a normal diffractometer.

〔Effect of the invention〕

As explained above, according to the present invention, a first pedestal that operates with the beam generation source as a reference point, a second pedestal that is provided on the first pedestal and operates with the opening of the first slit as a reference point, A third mount that operates with an operable monochromator installed on the second mount and containing a monochrome crystal as a reference part; a slit; a first driving means provided on the beam downstream side of the second slit and operably provided on a third mount to mount the single crystal;
Since the second drive means is provided on the beam downstream side of the first drive means and is operably provided on the third mount and mounts the projection target member, the alignment according to another invention of the present invention is also provided. The method includes the steps of: retreating the monochrome crystal in advance to a position different from the beam trajectory, and operating the second mount using the opening of the first slit as a reference point so that the beam passes through the monochromator and reaches the beam counter; A process of operating the first mount using the beam generation source as a reference point so that the intensity of the beam reaching the beam counter is maximized, and a process of moving the monochrome crystal forward on the beam trajectory so that the beam reaches the beam counter. a step of operating a monochromator, and positioning a third slit in place of the projection target member on the second driving means, and forming a monochrome condenser so that the beam passes through the opening of the third slit and reaches the beam counter. a step of activating the monochrome crystal, and a step of locating a fourth slit in place of the single crystal on the first driving means and operating the third mount using the monochrome crystal as a reference so as to pass through the fourth slit and the openings of the second slit. and a step of aligning the opening of the third slit and the opening of the fourth slit by slightly moving the fourth slit using the monochrome crystal as a reference part, and a step of positioning the single crystal on the first driving means in place of the fourth slit. After correcting the inclination of the single crystal axis by rotating the single crystal, the single crystal is moved in the horizontal and vertical directions so as to pass through the opening of the fourth slit and reach the beam counter. A semiconductor wafer is positioned in place of the third slit 7, and a fifth slit having two openings is positioned in place of the first slit, and the beam passing through the two openings of this fifth slit is aligned with the first alignment mark. After operating the monochrome crystal so as to irradiate the single crystal, the member to be projected is positioned on the first driving means instead of the fourth slit, and the member to be projected is moved so that the beam emitted from the single crystal irradiates the second alignment mark. The second mount and the third mount can be operated by the operation of the first mount during alignment, and the third mount can be operated by the operation of the second mount. The monochrome crystal inside, the single crystal on the third mount, and the projected member can be operated. Therefore, since each component can be aligned by setting a guideline or a center of rotation, alignment accuracy can be improved. Also,
When a component closer to the beam generation source is operated, components further away can be operated at the same time, so there is an advantage that the time spent on alignment can be reduced.゛

[Brief explanation of the drawing]

FIG. 1 is a perspective view schematically showing a projection apparatus according to the present invention, FIG. 2 is a perspective view showing a goniometer of the projection apparatus according to the invention, and FIG. Diagrams shown to explain alignment,
Figures 4 (a) to (C) are diagrams shown to explain the alignment of the monochromator, and Figures 5 (a) and ('b).
is a diagram shown to explain goniometer alignment, Figures 6 (a) and (b) are diagrams shown to explain crystal alignment, and Figures 7 (a) and (b) are diagrams shown to explain alignment mark alignment. FIG. 8 is a front view showing a conventional projection device. 11...First mount, 12...Beam, 13...
... synchrotron, 14 ... bending magnet, 15 ... goniometer, 16 ... second mount,
17...first slit, 18...pinhole,
19... Goniometer, 20... Third mount, 2
1... First monochrome crystal, 22... Second monochrome crystal, 23... Monochromator, 24... Goniometer, 25... Second slit, 26...
Goniometer, 27... Single crystal, 28... Goniometer, 29... Semiconductor wafer, 30.31...
...Goniometer. Agent Masuo Oiwa 2nd @ Figure 4 (G) (b) (C) (G) Figure 6 Figure 7

Claims (2)

[Claims] (1) A first mount that operates with the beam generation source as a reference point; a second mount that is installed on the first mount and operates with the opening of the first slit as a reference point; a third mount that operates with an operable monochromator containing a monochrome crystal as a reference part; a second slit provided on the third mount and provided on the downstream side of the beam of the monochromator; and the second slit. a first driving means provided downstream of the beam and operatively provided on the third mount for mounting the single crystal; and a first driving means provided downstream of the beam of the first driving means and operatively mounted on the third mount. 1. A projection device comprising: a second drive means which is provided so as to be capable of mounting a projection target member. (2) In claim 1, the monochrome crystal is retreated in advance to a position different from the beam trajectory, and the second mount is set using the opening of the first slit as a reference point so that the beam passes through the monochromator and reaches the beam counter. The process of operating;
A step of operating the first mount using the beam generation source as a reference point so that the intensity of the beam reaching the beam counter is maximized, and after advancing the monochrome crystal on the beam trajectory,
a step of operating the monochromator so that the beam reaches the beam counter; and a step of positioning a third slit in place of the projection target member on the second driving means, and the beam passing through the opening of the third slit to reach the beam counter. positioning a fourth slit in place of the single crystal on the first driving means, and using the monochrome crystal as a reference part to pass through the openings of the fourth slit and the second slit; a step of operating the third mount;
A step of aligning the opening of the third slit and the opening of the fourth slit by slightly moving the fourth slit using the monochrome crystal as a reference, and positioning the single crystal on the first driving means in place of the fourth slit. , a step of correcting the inclination of the single crystal axis by rotating the single crystal, and then moving the single crystal in the horizontal and vertical directions so as to pass through the opening of the fourth slit and reach the beam counter; A semiconductor wafer is positioned in place of the third slit, and a fifth slit having two openings is positioned in place of the first slit. After operating the crystal, positioning the projection member on the first driving means instead of the fourth slit, and operating the projection member so that the beam emitted from the single crystal irradiates the second alignment mark. An alignment method characterized by: