JPH022999A - X-ray exposure device - Google Patents
X-ray exposure deviceInfo
- Publication number
- JPH022999A JPH022999A JP63145913A JP14591388A JPH022999A JP H022999 A JPH022999 A JP H022999A JP 63145913 A JP63145913 A JP 63145913A JP 14591388 A JP14591388 A JP 14591388A JP H022999 A JPH022999 A JP H022999A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- mirror
- mask
- emitted light
- reciprocating movement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005469 synchrotron radiation Effects 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Particle Accelerators (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はX線露光装置に関し、ざらに詳しくは大面積の
X線マスクパターンを均一に転写できるX線露光装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray exposure apparatus, and more particularly to an X-ray exposure apparatus capable of uniformly transferring a large-area X-ray mask pattern.
[従来の技術]
シンクロトロン放射光を使用づるX線露光装置の原理は
第3図に示すように、蓄積リング1中のシンクロトロン
放射光源2より発Vられたシンクロトロン放射光3をX
線吸収祠によりマスクパターンの描かれたX線マスク4
を通−して被加工物6上のレジス1〜膜5にマスクパタ
ーンを転写するものである。[Prior Art] The principle of an X-ray exposure apparatus using synchrotron radiation is as shown in FIG.
X-ray mask 4 with a mask pattern drawn by a ray absorption shrine
The mask pattern is transferred to the resist 1 to film 5 on the workpiece 6 through the mask pattern.
シンクロトロン放射光3は、電子軌道面に平行な方向に
は強度が均一であるが、垂直方向には鋭い角度分布をも
つため、放飼光源から約107r1.離れた位置でも、
縦方向には幅fI1mmの均一露光領域しか得られない
。従来、露光領域を拡大覆る方法として、1983年に
発行された用行物[ジャーナル・オブ・バキューム・1
ノイエンス・アンド・テクノ[1ジーJ (Journ
al or Vacuum 5cience andr
ecbnology)[31巻、1262〜1266頁
に開示されているように、シンクロ1〜ロン敢則光源2
とX線マスク4の間に設置したX線ミラー8を回転11
17を中心として振動さぜる方法が実施されている。The synchrotron radiation 3 has a uniform intensity in the direction parallel to the electron orbital plane, but has a sharp angular distribution in the vertical direction, so it is approximately 107r1. Even in a remote location,
In the vertical direction, only a uniformly exposed area with a width fI of 1 mm can be obtained. Conventionally, as a method of enlarging and covering the exposed area, there is a method published in 1983 [Journal of Vacuum 1].
Neuens & Techno [1GJ (Journ)
al or Vacuum 5science andr
ecbnology) [Vol. 31, pp. 1262-1266, synchro 1 to long light source 2
Rotate 11 the X-ray mirror 8 installed between the
A method of vibrating around 17 has been implemented.
[発明が解決しようとする課題]
以上述べた装置においでは、露光領域を拡大するという
目的は達しているが、次のような欠点を有している。[Problems to be Solved by the Invention] Although the apparatus described above has achieved the objective of expanding the exposure area, it has the following drawbacks.
即ら、マスク上を縦幅数mmのX線ビームが上下に走査
するため、マスク上でX線に照射されている部分のみが
熱膨張を起し、被加工物にマスクパターンを転写する際
に位置ずれの原因となる。In other words, because the X-ray beam with a vertical width of several mm scans vertically over the mask, only the portion of the mask that is irradiated with the X-rays undergoes thermal expansion, and when the mask pattern is transferred to the workpiece, thermal expansion occurs. This may cause misalignment.
本発明の[1的は、このような従来の問題点を除去し、
位置ずれの少ない大面積にわたる転写が可能なX線露光
装置を提供することにある。[1] The present invention eliminates such conventional problems,
An object of the present invention is to provide an X-ray exposure device capable of transferring over a large area with little positional deviation.
[課題を解決するための手段]
本発明は、シンクロトロン放射光源から放射されるシン
クロトロン放射光をX線ミラーで反則させ、X線マスク
を通してX線レジストが塗布された被加工物上に照射し
てなるX線露光装置において、X線ミラーとして縦方向
に直線往復運動を覆る凸面鏡を用いることを特徴とする
X線露光装置である。[Means for Solving the Problems] The present invention refracts synchrotron radiation light emitted from a synchrotron radiation light source with an X-ray mirror, and irradiates it onto a workpiece coated with an X-ray resist through an X-ray mask. This X-ray exposure apparatus is characterized in that it uses a convex mirror that covers linear reciprocating motion in the vertical direction as an X-ray mirror.
[実施例]
以下、本発明の一実施例について、図面を参照しながら
説明する。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings.
第1図は本発明に係るX線露光装置の一実施例のX線ミ
ラ一部の概略構成図である。X線ミラ部以外の構成につ
いては第3図のX線露光装置と同様であるので、その説
明を省略する。FIG. 1 is a schematic diagram of a part of an X-ray mirror of an embodiment of an X-ray exposure apparatus according to the present invention. Since the configuration other than the X-ray mirror section is the same as that of the X-ray exposure apparatus shown in FIG. 3, the explanation thereof will be omitted.
叩ら、本発明では、第3図におけるX線ミラー8のかわ
りに第1図に示すにうな往復運動する凸面v111を有
している。シンクロトロン放射光3は第1図の如きX線
ミラーで反則され、X線マスクおよび被加工物上に照射
されるが、X線ミラーは凸面鏡11なのでビーム幅は拡
大される。さらに、駆動軸12をql(1としてミラー
を縦方向(ビーム方向に対して垂直な方向)に往復運動
させることにより、照削角13が変化するため、シンク
ロトロン放射光3の出射角が変化し、ビームがマスク上
をスキAノンする。In the present invention, instead of the X-ray mirror 8 in FIG. 3, a convex surface v111 that reciprocates as shown in FIG. 1 is provided. The synchrotron radiation 3 is reflected by an X-ray mirror as shown in FIG. 1 and irradiated onto the X-ray mask and the workpiece, but since the X-ray mirror is a convex mirror 11, the beam width is expanded. Furthermore, by setting the drive shaft 12 to ql (1) and reciprocating the mirror in the vertical direction (direction perpendicular to the beam direction), the beam angle 13 changes, so the output angle of the synchrotron radiation light 3 changes. Then, the beam performs a scanon on the mask.
第2図はマスク上におけるビーム幅を示す図でAは本発
明によるビーム強度、Bは従来法によるビーム強度を示
す。同図かられかるように、ビーム幅を数倍に拡大する
ことは容易であり、マスクの部分的な熱膨張による位置
ずれを大幅に軽減できる。J:た、本発明ではミラーの
運動は直線運動だけなので、リニアアクチュエータ等を
用い、駆動111111を直接駆動することにより、装
置を単純化することかできる。FIG. 2 is a diagram showing the beam width on the mask, where A shows the beam intensity according to the present invention and B shows the beam intensity according to the conventional method. As can be seen from the figure, it is easy to expand the beam width several times, and the positional shift due to partial thermal expansion of the mask can be significantly reduced. J: Also, in the present invention, the mirror moves only in a straight line, so the device can be simplified by directly driving the drive 111111 using a linear actuator or the like.
[発明の効果]
以上詳述した如く、本発明によればシンクロトロン敢q
・1光を用いて大面積の均一露光を行う際、マスクの部
分的な熱膨張による位置ずれの少ない露光ができるとい
う顕著な効果を有するX線露光装置を提供できる。[Effects of the Invention] As detailed above, according to the present invention, synchrotron
- It is possible to provide an X-ray exposure apparatus that has the remarkable effect of being able to perform exposure with less positional shift due to local thermal expansion of the mask when uniformly exposing a large area using one beam of light.
第1図は本発明の一実施例のX線ミラーを示づ概略構成
図、第2図は本発明によるX線露光におけるマスクーヒ
のX線強度分布を従来例と比較して承り図、第3図は従
来のX線露光装置の概略4111成図である。
1・・・蓄積リング
2・・・シンクロトロン放射光源
3・・・シンクロトロン放射光
4・・・X線マスク 5・・・レジスト膜6・・
・被加工物 7・・・回転軸8・・・X線ミラ
ー 11・・・凸面鏡12・・・駆動4qb
13・・・照I、!1角Fig. 1 is a schematic configuration diagram showing an X-ray mirror according to an embodiment of the present invention, Fig. 2 is a diagram comparing the X-ray intensity distribution of the mask during X-ray exposure according to the present invention with a conventional example, and Fig. 3 The figure is a schematic 4111 diagram of a conventional X-ray exposure apparatus. 1... Storage ring 2... Synchrotron radiation light source 3... Synchrotron radiation light 4... X-ray mask 5... Resist film 6...
・Workpiece 7...Rotation axis 8...X-ray mirror 11...Convex mirror 12...Drive 4qb 13...Sight I,! 1 corner
Claims (1)
トロン放射光をX線ミラーで反射させ、X線マスクを通
してX線レジストが塗布された被加工物上に照射してな
るX線露光装置において、X線ミラーとして縦方向に直
線往復運動をする凸面鏡を用いることを特徴とするX線
露光装置。(1) In an X-ray exposure device that reflects synchrotron radiation light emitted from a synchrotron radiation light source with an X-ray mirror and irradiates it onto a workpiece coated with an X-ray resist through an X-ray mask, An X-ray exposure apparatus characterized in that a convex mirror that makes linear reciprocating motion in the vertical direction is used as a ray mirror.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63145913A JPH022999A (en) | 1988-06-15 | 1988-06-15 | X-ray exposure device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63145913A JPH022999A (en) | 1988-06-15 | 1988-06-15 | X-ray exposure device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH022999A true JPH022999A (en) | 1990-01-08 |
Family
ID=15395972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63145913A Pending JPH022999A (en) | 1988-06-15 | 1988-06-15 | X-ray exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH022999A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6669815B1 (en) | 1997-09-11 | 2003-12-30 | Hymo Corporation | Sheet surface treating agent and ink-jet printing paper |
US9264830B2 (en) | 2006-08-08 | 2016-02-16 | Thomson Licensing | Audio level meter |
-
1988
- 1988-06-15 JP JP63145913A patent/JPH022999A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6669815B1 (en) | 1997-09-11 | 2003-12-30 | Hymo Corporation | Sheet surface treating agent and ink-jet printing paper |
US9264830B2 (en) | 2006-08-08 | 2016-02-16 | Thomson Licensing | Audio level meter |
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