JPH0585990B2 - - Google Patents

Info

Publication number
JPH0585990B2
JPH0585990B2 JP59067221A JP6722184A JPH0585990B2 JP H0585990 B2 JPH0585990 B2 JP H0585990B2 JP 59067221 A JP59067221 A JP 59067221A JP 6722184 A JP6722184 A JP 6722184A JP H0585990 B2 JPH0585990 B2 JP H0585990B2
Authority
JP
Japan
Prior art keywords
voltage
potential
vcc
electrode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59067221A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60211689A (ja
Inventor
Yoshihiro Takemae
Tomio Nakano
Kimiaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59067221A priority Critical patent/JPS60211689A/ja
Publication of JPS60211689A publication Critical patent/JPS60211689A/ja
Publication of JPH0585990B2 publication Critical patent/JPH0585990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP59067221A 1984-04-04 1984-04-04 半導体記憶装置 Granted JPS60211689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59067221A JPS60211689A (ja) 1984-04-04 1984-04-04 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59067221A JPS60211689A (ja) 1984-04-04 1984-04-04 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS60211689A JPS60211689A (ja) 1985-10-24
JPH0585990B2 true JPH0585990B2 (zh) 1993-12-09

Family

ID=13338632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59067221A Granted JPS60211689A (ja) 1984-04-04 1984-04-04 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS60211689A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2504140B2 (ja) * 1988-10-14 1996-06-05 日本電気株式会社 Mos型ダイナミック半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123685A (en) * 1977-04-04 1978-10-28 Nec Corp Binary memory device
JPH0219558A (ja) * 1988-07-07 1990-01-23 Tokyo Kihan:Kk 含浸装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123685A (en) * 1977-04-04 1978-10-28 Nec Corp Binary memory device
JPH0219558A (ja) * 1988-07-07 1990-01-23 Tokyo Kihan:Kk 含浸装置

Also Published As

Publication number Publication date
JPS60211689A (ja) 1985-10-24

Similar Documents

Publication Publication Date Title
JP2851757B2 (ja) 半導体装置および半導体記憶装置
US5436552A (en) Clamping circuit for clamping a reference voltage at a predetermined level
KR940003891B1 (ko) 오동작 방지수단을 갖는 반도체장치
US5302870A (en) Apparatus for providing multi-level potentials at a sense node
US4409496A (en) MOS Device including a substrate bias generating circuit
US5699303A (en) Semiconductor memory device having controllable supplying capability of internal voltage
US7053693B2 (en) Voltage generating circuit, voltage generating device and semiconductor device using the same, and driving method thereof
US5757225A (en) Voltage generation circuit that can stably generate intermediate potential independent of threshold voltage
KR100532765B1 (ko) 반도체 기억 장치
US6262910B1 (en) Semiconductor memory device having a ferroelectric memory capacitor
US6496407B2 (en) Ferroelectric memory
EP0113187B1 (en) A dynamic semiconductor memory device
KR930000759B1 (ko) 다이나믹 메모리
US5276651A (en) Voltage generating device generating a voltage at a constant level and operating method thereof
KR970006605B1 (ko) 출력전압에 있어 전계효과트랜지스터의 한계치전압의 손실이 생기지 않는 전압발생회로
JP3740577B2 (ja) 負電位発生回路、負電位発生装置及びこれを用いた半導体装置
US20020075067A1 (en) Semiconductor integrated circuit
US6236598B1 (en) Clamping circuit for cell plate in DRAM
US7251153B2 (en) Memory
KR0154755B1 (ko) 가변플레이트전압 발생회로를 구비하는 반도체 메모리장치
US5206551A (en) Method for providing multi-level potentials at a sense node
JPH0585990B2 (zh)
CN113129962A (zh) 写辅助电路、器件及其方法
US5670909A (en) Semiconductor device having a boosting circuit
JPH0335493A (ja) ダイナミック型半導体記憶装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees