JPH0585632B2 - - Google Patents

Description

Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to a method for forming thin films on both sides of a disc-shaped deposition substrate having a large surface area, which is suitable for simultaneously forming thin films on both the front and back surfaces of the disc-shaped deposition substrate. The present invention relates to a simultaneous sputtering method and apparatus.

[Background of the invention]

Conventionally, as a method of forming a thin film using a sputter electrode on the surface of a so-called donut-shaped disk having a large area and a cavity in the center, such as a magnetic disk, there is a method described in, for example, Japanese Patent Application Laid-open No. 141197/1983. . However, the above method includes the following problems.

(a) Since the opening area of the shutter is only a fraction of the surface area of the disk, the efficiency of film formation on the disk decreases.

(b) In order to form a film over the entire surface area of the disk through the opening of the shutter, it is necessary to rotate the disk or the shutter, which makes the structure complicated.

[Purpose of the invention]

An object of the present invention is to form a thin film by sputtering using a planar magnetron sputtering method simultaneously on both the front and back surfaces of a disc-shaped film-forming substrate having a large surface area using a simple structure, in order to solve the problems of the prior art described above. The object of the present invention is to provide a method and apparatus for simultaneously sputtering both surfaces of a disk-shaped coated substrate, which can uniformize the thickness distribution and quality of the thin film and improve the film formation rate.

[Summary of the invention]

In order to achieve the above object, the present invention arranges a first magnetic pole body at the center and an annular second magnetic pole body around the first magnetic pole body, and connects a magnetic body between the rear ends of the first and second magnetic pole bodies. the first and second magnetic poles near the target surface disposed on the first and second magnetic pole bodies;
Each planar magnetron sputter electrode, which generates a ring-shaped tunnel magnetic field in the region between the magnetic pole bodies, is placed stationary and facing each of both sides of the disk-shaped film-forming substrate. Plasma is generated in a ring-shaped tunnel magnetic field formed near the surface of the target between the first magnetic pole body and the second magnetic pole body, and each target material is applied to both surfaces of the disc-shaped film-forming substrate. This is a method of simultaneous sputtering on both sides of a disk-shaped substrate to be film-formed, which is characterized in that a film is formed almost simultaneously on each of the two. Further, the present invention provides a first magnetic pole body, a third magnetic pole body having an annular shape around the first magnetic pole body, and a second magnetic pole body having an annular shape around the first magnetic pole body. A first electromagnetic coil is connected between the first magnetic pole body and the third annular magnetic pole body by coupling the rear ends of the body with a magnetic material,
A second electromagnetic coil is disposed between the third annular magnetic pole body and the second annular magnetic pole body, and a second electromagnetic coil is arranged between the third annular magnetic pole body and the second annular magnetic pole body, and Each of planar magnetron sputter electrodes that generate a ring-shaped tunnel magnetic field in a region between the first, third, and second magnetic pole bodies are stationary opposed to each of both surfaces of the disc-shaped deposition substrate. In the arranged state, the magnetic field between at least the first magnetic pole body and the second magnetic pole body is controlled by a current flowing through the at least first or second electromagnetic coil, so that the magnetic field near the target surface of each planar magnetron electrode is controlled. controlling the ring-shaped tunnel magnetic fields formed in the ring-shaped tunnel magnetic fields, and generating plasma in the controlled ring-shaped tunnel magnetic fields to deposit each target material almost simultaneously on each of both sides of the disc-shaped film-forming substrate. This is a method for simultaneous sputtering on both sides of a disc-shaped film-forming substrate. Further, the present invention provides a support means for supporting a disk-shaped substrate to be film-formed, and arranges a first magnetic pole body in the center and an annular second magnetic pole body around the first magnetic pole body, and The rear ends of the magnetic pole bodies are coupled by a magnetic material, and the first and second
planar magnetron sputter electrodes that generate a ring-shaped tunnel magnetic field in the region between the magnetic pole bodies of the planar magnetron sputter electrodes are stationary opposed to each of both sides of the disc-shaped film-forming substrate supported by the supporting means; Plasma is generated in a ring-shaped tunnel magnetic field formed near the target surface between the first magnetic pole body and the second magnetic pole body of each Poona magnetron electrode, and each target material is attached to the disc. This is a simultaneous sputtering apparatus for simultaneously sputtering both surfaces of a disc-shaped film-forming substrate, characterized in that it is configured to form a film on both surfaces of the disc-shaped film-forming substrate substantially simultaneously. Further, the present invention
A support means for supporting a disk-shaped substrate to be film-formed is provided, and a first magnetic pole body is arranged at the center, a ring-shaped third magnetic pole body is arranged around the first magnetic pole body, and a ring-shaped second magnetic pole body is arranged around the first magnetic pole body. The rear ends of the first, third, and second magnetic pole bodies are coupled with a magnetic material, and a first electromagnetic coil is connected between the first magnetic pole body and the third annular magnetic pole body, and the first electromagnetic coil is connected to the third annular magnetic pole body. a second electromagnetic coil is disposed between the magnetic pole body and the second annular magnetic pole body, and A planar magnetron sputter electrode that generates a ring-shaped tunnel magnetic field in a region between the third and second magnetic pole bodies is stationary and opposed to each of both surfaces of the disc-shaped deposition substrate supported by the supporting means. and generate a magnetic field near the target surface of each planar magnetron electrode by controlling a magnetic field between at least the first magnetic pole body and the second magnetic pole body by a current flowing through the at least first or second electromagnetic coil. A control means for controlling the ring-shaped tunnel magnetic field is provided, and plasma is generated in each ring-shaped tunnel magnetic field controlled by the control means to approximately apply each target material to each of both surfaces of the disc-shaped film-forming substrate. This is a simultaneous sputtering apparatus for simultaneously forming films on both sides of a disc-shaped film-forming substrate. Further, in the present invention, in the simultaneous sputtering apparatus for both sides of the disc-shaped film-forming substrate, the supporting means is provided at the center of the disc-shaped film-forming film-forming substrate with a support shaft passing through the center of each planar magnetron electrode. It is characterized by being configured to sandwich and support the parts. Further, the present invention provides an apparatus for simultaneous sputtering on both sides of the disc-shaped film-forming substrate, wherein each distance between the target of each of the planar magnetron electrodes and the disc-shaped film-forming substrate can be adjusted. It is characterized by

[Embodiments of the Invention] Below, FIGS. 1 and 2 showing embodiments of the present invention will be described. FIG. 1 is a cross-sectional view showing an embodiment of an apparatus for simultaneous sputtering on both sides of a disc-shaped film-forming substrate according to the present invention, and FIG. 2 is a cross-sectional view of a sputter electrode showing an embodiment different from the sputter electrode shown in FIG. It is a diagram. In FIG. 1, 1 and 1' are two sputter electrodes which are symmetrically formed with an interval between them. Reference numeral 2 denotes a disk (disk-shaped film-forming substrate) on which a thin film is to be formed on both sides, and is inserted between the two sputter electrodes 1 and 1'. 3 is the support shaft,
It passes through the through holes 1a, 1a' formed in the center of the two sputter electrodes 1, 1', and inserts both the front and back sides of the disc 2 with two center hubs 4 in the center. I support it as much as possible. The two sputter electrodes 1, 1' are symmetrical to each other and have the configuration described below. 5 is a cathode formed in a cylindrical shape, with through holes 1a and 1a' formed in the center thereof passing through in the axial direction of the support shaft 3, and a ring-shaped cavity opening on the opposing surface of the disc 2; 6 is formed. 7 is an inner seal, and the through holes 1a, 1 are sealed.
A shaft portion 7a is inserted between the shaft portion a and the support shaft 3, and a shaft portion 7a is inserted between the inner circumferential portion of a target to be described later and the disk 2 at the end of the shaft portion 7a on the disk 2 side. A flange portion 7c for inserting the entire device of the present invention and holding it in a closed container (not shown) is fixed to the inner seal portion 7b and the other end. Reference numeral 8 denotes a magnetic flux generating mechanism including a yoke 9 which is inserted and supported in the cavity 6 and formed from a flat plate into a ring shape, and a first magnetic pole body which is formed of a ring-shaped soft material and is in contact with the inner circumference of the yoke 9. 10 and a second magnetic pole body 11 made of a link-shaped permanent magnet and opposed to the outer circumferential portion of the yoke 9, which creates a tunnel-shaped line of magnetic force in the space on the opposing surface of the disk 2 of the target 12. A distribution (not shown) is generated. 12 is the target, Al-2%Si (purity 99.99%)
A flat plate material is formed into a ring shape, and is supported by the disk facing surfaces 1b, 1b of the cathode 5. An outer seal 13 is supported by the cathode 5 through an insulating layer plate (not shown) so as to be inserted between the outer circumference of the target 12 and the disc 2. 1
Reference numeral 4 designates a water conduit, which is supported by passing through the cathode 5 and yoke 9 in the axial direction, and has its tip opened toward the first and second magnetic pole bodies 10 and 11 of the target 12. The target 12 is cooled by water jetted into the cavity 6 from the opening of the target 14. With the above configuration, the magnetic flux generating mechanism 8 composed of the first and second magnetic pole bodies 10, 11 and the yoke 9 is installed in the cavity 6 formed in the cathode 5, and the through holes 1a, 1a' The target 12 is attached to the opposing surfaces 1b and 1b' of the disc 2, and the outer seal 13 is attached to the outer periphery of the target 12.
and assemble the two sputter electrodes 1, 1'. Next, the two sputter electrodes 1 after assembly,
1' are arranged at intervals so that their targets 12 face each other, and then the through holes 1a,
A support shaft 3 is passed through 1a', and the disk 2 is supported by two center hubs 4 on the support shaft 3 so as to be placed in the center between these two sputter electrodes 1, 1'. Next, two sputter electrodes 1, 1'
on the support shaft 3 and move it to the target 12.
By adjusting the distance between the two sputter electrodes 1 and 1' and the disk 2, the center positions of the two sputter electrodes 1 and 1' and the disk 2 can be determined, and the distance between the target 12 and the disk 2 can be adjusted. . Next, planar magnetron sputter electrode structures 1, 1' are placed on both sides of the disk 2 at the same time.
The operation of forming a thin film will be explained below.
First, in each sputter electrode 1, 1', a ring-shaped space (region) is formed on the surface of the target 12 facing each surface of the disk 2 by the first magnetic pole body 10 and the second magnetic pole body 11. A tunnel magnetic field distribution is generated, and by the high voltage applied between the anode 13 and the cathode 5, electrons are accelerated by the ring-shaped tunnel magnetic field to generate plasma, and the plasma-like ions reach the target 12. Upon impact, constituent atoms or particles of the material forming the target 12 are ejected and deposited simultaneously on each surface of the disk 2, forming a thin film of target material.

Next, the case of a sputter electrode different from the sputter electrode shown in FIG. 1 will be explained based on FIG. 2. That is, 19 is a magnetic flux generation mechanism, and yoke 1
4, and a first magnetic pole body 15 made of a ring-shaped soft magnetic material 4 that is in contact with the inner circumference of the end surface of the yoke 14.
and a second magnetic pole body 16 made of a ring-shaped soft magnetic material 4 that is in contact with the outer periphery of the end surface of the yoke 14.
and a third magnetic pole body 17 made of a ring-shaped soft magnetic material arranged between the first magnetic pole body 15 and the second magnetic pole body 16 are positioned so that they are in the same center position with each other. Magnetic pole body 15,1
A coil 18 for exciting these between 6 and 17
a and 18b are provided. Since the parts other than the above are the same as those in FIG. 1, they are indicated by the same reference numerals as in FIG. 1.
In this embodiment, with the above configuration, by controlling the current flowing through the coils 18a and 18b, at least the first magnetic pole body 10 and the second magnetic pole body 1
A ring-shaped tunnel is generated near the surface of the target 12 of each planar magnetron electrode 1, 1' by simultaneously controlling the magnetic flux (magnetic field between the first magnetic pole body 10 and the second magnetic pole body 16) caused by 6. The magnetic field can be controlled simultaneously, and a thin film is sputtered on both the front and back sides of the disk 2 simultaneously using a planar magnetron sputtering method, further improving the uniformity of the thickness distribution and quality of the thin film and the speed of film formation. It can be measured. Note that the process leading to plasma generation is the same as the embodiment shown in FIG. 1 above.

〔Effect of the invention〕

According to the present invention, with a simple configuration, a thin film is formed by sputtering simultaneously on both the front and back surfaces of a disc-shaped deposition substrate having a large surface area using a planar magnetron sputtering method, and a thin film is formed near the surface of each target. The ring-shaped tunnel magnetic field makes it possible to make the film thickness distribution of the thin film uniform, and by making the film stress uniform, the film quality of the thin film is made uniform, and the film formation rate can be improved. Further, according to the present invention, the magnetic field between at least the first magnetic pole body and the second magnetic pole body is controlled by a current flowing through at least the first or second electromagnetic coil, so that the magnetic field on the target surface of each planar magnetron electrode is controlled. By controlling a ring-shaped tunnel magnetic field formed nearby, the thickness distribution and quality of the thin film can be made more uniform on both sides of a disk-shaped substrate with a large surface area. It produces the effect that can be achieved. Further, according to the present invention, by configuring the device so that each distance between the target of each planar magnetron electrode and the disc-shaped deposition substrate can be adjusted, it is possible to adjust the distance between the target of each planar magnetron electrode and the disc-shaped deposition substrate. This can further promote uniformity of the thickness distribution and quality of the thin film. Further, according to the present invention, the support means is configured to sandwich and support the center portion of the disk-shaped film-forming substrate with the support shaft penetrating the center portion of each planar magnetron electrode. By aligning the center of the deposition target substrate with the center of each planar magnetron electrode, it is possible to easily support the disk deposition target substrate.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an embodiment of an apparatus for simultaneous sputtering on both sides of a disc-shaped film-forming substrate according to the present invention;
FIG. 2 is a sectional view of a sputter electrode showing a different embodiment from the sputter electrode shown in FIG. 1, 1'... Sputter electrode, 2... Disc, 3...
...Support shaft, 4...Center hub, 5...Cathode, 6...
...Cavity, 7...Inner seal, 8, 13...Magnetic flux generation mechanism, 9, 14...Yoke, 10, 15...First magnetic pole body, 11, 16...Second magnetic pole body, 12
...Target, 13...Outer seal, 14'...
...Water pipe, 17...Third magnetic pole body, 18a, 18
b...Coil.

Claims (1)

[Claims] 1. A first magnetic pole body at the center and an annular second magnetic pole body around the first magnetic pole body.
and the rear ends of the first and second magnetic pole bodies are coupled by a magnetic material, and the first and second magnetic pole bodies are arranged near the target surfaces disposed on the first and second magnetic pole bodies. Each planar magnetron sputter electrode, which generates a ring-shaped tunnel magnetic field in the region between the two magnetic pole bodies, is placed stationary and facing each of both surfaces of the disk-shaped film-forming substrate. Plasma is generated in a ring-shaped tunnel magnetic field formed near the target surface between the first magnetic pole body and the second magnetic pole body of the electrode, and each target material is transferred to the disc-shaped film-forming substrate. A method for simultaneous sputtering on both sides of a disk-shaped substrate to be coated, characterized by forming a film on each side almost simultaneously. 2 The first magnetic pole body in the center and the annular third pole body around it.
A magnetic pole body and an annular second magnetic pole body are arranged around the magnetic pole body, and the rear ends of the first, third and second magnetic pole bodies are coupled with a magnetic material, and the first magnetic pole body and the second magnetic pole body are connected to each other. A first electromagnetic coil is arranged between the third annular magnetic pole body and a second electromagnetic coil between the third annular magnetic pole body and the second annular magnetic pole body, each of planar magnetron sputter electrodes that generate a ring-shaped tunnel magnetic field in a region between the first, third, and second magnetic pole bodies near the target surface disposed on the third and second magnetic pole bodies; The gap between at least the first magnetic pole body and the second magnetic pole body is caused by a current flowing through the at least first or second electromagnetic coil when the disc-shaped substrate is statically opposed to each other on both surfaces. The ring-shaped tunnel magnetic field formed near the target surface of each planar magnetron electrode is controlled by controlling the magnetic field of the target material, and plasma is generated in each controlled ring-shaped tunnel magnetic field to cause each target material 1. A method for simultaneous sputtering on both sides of a disc-shaped deposition target substrate, characterized in that a film is deposited almost simultaneously on both sides of the disc-shaped deposition target substrate. 3 A support means for supporting a disk-shaped substrate to be film-formed is provided, and a first magnetic pole body is provided at the center and an annular second pole body is provided around the first magnetic pole body.
and the rear ends of the first and second magnetic pole bodies are coupled with a magnetic material, and the first and second magnetic pole bodies are arranged near the target surfaces disposed on the first and second magnetic pole bodies. Each of the planar magnetron sputter electrodes that generate a ring-shaped tunnel magnetic field in the region between the second magnetic pole bodies is placed on each stationary opposing surface of both surfaces of the disc-shaped deposition substrate supported by the supporting means. Plasma is generated in a ring-shaped tunnel magnetic field formed near the target surface between the first magnetic pole body and the second magnetic pole body of each planar magnetron electrode, and each target material is 1. An apparatus for simultaneous sputtering on both sides of a disc-shaped film-forming substrate, characterized in that it is configured to form a film on both sides of the disc-shaped film-forming substrate almost simultaneously. 4. The supporting means is configured to sandwich and support the center portion of the disc-shaped film-forming substrate with a support shaft passing through the center portion of each planar magnetron electrode. An apparatus for simultaneous sputtering on both sides of the disc-shaped film-forming substrate according to item 3. 5. The disc-shaped film-forming substrate according to claim 3, characterized in that each distance between the target of each of the planar magnetron electrodes and the disc-shaped film-forming substrate can be adjusted. Simultaneous sputtering equipment for both sides of the substrate. 6 A support means for supporting a disk-shaped substrate to be film-formed is provided, with a first magnetic pole body in the center and an annular third pole body around the first magnetic pole body.
A magnetic pole body and an annular second magnetic pole body are arranged around the magnetic pole body, and the rear ends of the first, third, and second magnetic pole bodies are coupled with a magnetic material, and the first magnetic pole body and the third magnetic pole body are connected to each other. a first electromagnetic coil between the annular magnetic pole bodies;
A second electromagnetic coil is arranged between the annular magnetic pole body and the second annular magnetic pole body, and a planar magnetron sputter electrode that generates a ring-shaped tunnel magnetic field in the region between the third and second magnetic pole bodies, stationary and facing each of both sides of the disc-shaped deposition substrate supported by the support means. the at least first or second
control means for controlling a ring-shaped tunnel magnetic field generated near the target surface of each planar magnetron electrode by controlling the magnetic field between at least the first magnetic pole body and the second magnetic pole body by a current flowing through the electromagnetic coil; is provided, and plasma is generated in each ring-shaped tunnel magnetic field controlled by the control means, so that each target material is deposited almost simultaneously on each of both surfaces of the disc-shaped deposition target substrate. A unique sputtering device for simultaneous sputtering on both sides of a disk-shaped substrate. 7. The supporting means is configured to sandwich and support the center portion of the disk-shaped film-forming substrate with a support shaft passing through the center portion of each planar magnetron electrode. An apparatus for simultaneous sputtering on both sides of the disc-shaped film-forming substrate according to item 6. 8. The disc-shaped film-forming substrate according to claim 6, characterized in that each distance between the target of each of the planar magnetron electrodes and the disc-shaped film-forming substrate can be adjusted. Simultaneous sputtering equipment for both sides of the substrate.