JPS61207575A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS61207575A JPS61207575A JP4656085A JP4656085A JPS61207575A JP S61207575 A JPS61207575 A JP S61207575A JP 4656085 A JP4656085 A JP 4656085A JP 4656085 A JP4656085 A JP 4656085A JP S61207575 A JPS61207575 A JP S61207575A
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- Japan
- Prior art keywords
- disk
- targets
- target
- magnetic field
- cathodes
- Prior art date
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Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明はブレーナマグネ)0ン形スパッタ電。[Detailed description of the invention] [Field of application of the invention] The present invention is a Brenna Magne) 0-type sputtering electric current.
極(以下スパッタ電極という)構造体とくに大。The electrode (hereinafter referred to as sputter electrode) structure is particularly large.
きな表面積を有する表裏両面に同時に薄膜を形成するの
に好適な構成を有するスパッタ電極構0造体に関するも
のである。The present invention relates to a sputter electrode structure having a configuration suitable for simultaneously forming a thin film on both the front and back surfaces having a large surface area.
従来、磁気ディスクのごとく大面積でしかも・中心部に
空洞のあるいわゆるドーナツ状円板の・表面にスパッタ
電極で薄膜を形成する方法とし、)てはたとえば特開昭
55−141197号公報に記載さ。Conventionally, there has been a method of forming a thin film using a sputtering electrode on the surface of a so-called donut-shaped disk having a large area and a cavity in the center, such as a magnetic disk. difference.
れたものがある。然るに上記の方法ではつぎに。There is something that was lost. However, in the above method, next.
述べるような問題点を含んでいる。It includes the problems mentioned above.
(イ) 円板の表面積に対してシャッタの開口面積。(b) Opening area of the shutter relative to the surface area of the disc.
がその1部であるため、円板上への成膜効率1゜が低下
する。is a part of that, so the film formation efficiency on the disk decreases by 1°.
(ロ) シャッタの開口部を通じて円板の表面積全。(b) Total surface area of the disk through the opening of the shutter.
体に成膜するため一円板もしくはシャッタを。A circular plate or shutter to form a film on the body.
回転させる必要があるので、構成が複雑にな゛る。Since it needs to be rotated, the configuration becomes complicated.
(/9 第1図および第2図に示す構成から判断ず“る
と、円板、シャッタ、ターゲットを別個に。(/9 Judging from the configuration shown in Figures 1 and 2, the disk, shutter, and target are separate.
位置決めしているので、位置決めのための構。Since it is positioning, it is a structure for positioning.
成が複雑でかつ容易に操作することができな゛い恐れが
ある。 10〔発明の目的〕
本発明は上記に述べた従来の問題点を解決し;簡単な構
成にて円板の表裏両面を同時に行ない。The configuration may be complex and may not be easy to operate. 10 [Object of the Invention] The present invention solves the above-mentioned conventional problems; it simultaneously processes both the front and back sides of a disc with a simple structure.
その膜厚分布および膜質の均一化および成膜速゛度の向
上を可能とするスパッタ電極構造体を提1′供すること
にある。It is an object of the present invention to provide a sputter electrode structure that can make the film thickness distribution and quality uniform and improve the film formation speed.
〔発明の概要〕
本発明は上記に述べた目的を達成するため、゛夫々ター
ゲットを有する2個のスパッタ電極間。[Summary of the Invention] In order to achieve the above-mentioned objects, the present invention provides a sputtering method for sputtering between two sputtering electrodes, each having a target.
に円板を介挿して円板もしくはターゲットを回2゜転さ
せることなく円板の表裏両面に同時に薄膜。A thin film is applied to both the front and back sides of the disc at the same time without rotating the disc or target by 2 degrees.
を形成しうるようにしたこと、また上記2個の”スパッ
タ電極の中心部を貫通する支持軸に上記。In addition, the above-mentioned support shaft penetrates through the center of the two sputter electrodes.
円板の中心部に支持させて円板と、2個のスパッタ電極
との中心位置の位置決めを可能にし、かつ円板のサイズ
、希望する膜分布に応じて上。It is supported at the center of the disk to enable positioning of the center of the disk and the two sputtering electrodes, and the top is adjusted according to the size of the disk and the desired film distribution.
記2個のターゲットと円板との距離を上記支持。Support the distance between the two targets and the disc as shown above.
軸にそうて適宜選択可能にしたことを特徴とす。It is characterized by being able to be selected as appropriate by placing it on the axis.
るものである。It is something that
本発明は被スパッタ物質から形成されたター+0ゲツト
と、このターゲットを表面に支持する。The present invention includes a target formed from a sputtered material and supports the target on a surface.
とともにこの表面に開口する円筒形状の空洞を・有する
陰極と、この陰極の上記空洞内に支持さ。and a cathode having a cylindrical cavity opening to the surface thereof, and a cathode supported within the cavity of the cathode.
れ、上記ターゲットの表面にトンネル状磁界を・発生さ
せる磁界発生部と、上記ターゲットの表、)面上空間に
配置されたシールドとから構成され。and a magnetic field generating section that generates a tunnel-like magnetic field on the surface of the target, and a shield disposed in a space above the surface of the target.
たスパッタ電極において、中心部に貫通穴と、。In the sputter electrode, there is a through hole in the center.
前記ターゲツ′トを支持する表面に開口し、上記。an opening in the surface supporting the target;
貫通穴の周囲に形成されたリング状の空洞とを。A ring-shaped cavity is formed around the through hole.
有する陰極を設け、この陰極の上記空洞内に支1゜持さ
れたリング状の磁界発生部を設け、上記夕゛−ゲットの
表面内周部上の空間に位置する如く。A ring-shaped magnetic field generating portion supported by 1° within the cavity of the cathode is provided, and is located in a space above the inner circumferential portion of the surface of the target.
上記貫通入内に挿入する内側シールドを設け、。An inner shield is provided to be inserted into the through-hole.
上記ターゲットの表面外周部上の空間に位置す。It is located in the space above the outer periphery of the surface of the target.
る如(上記陰極に支持された外側シールドを設・けたこ
とを特徴とする。さらに互いにターゲツ゛トが対向する
如く、間隔をおいて配置された上記のスパッタ電極を設
け、これらのスパッタ電。Further, the sputter electrodes are provided at intervals such that the targets face each other, and these sputter electrodes are disposed at intervals so that the targets face each other.
極間にスパッタされる媒体を設け、かつ上記の・スパッ
タ電極の中心部を貫通して上記媒体の中10心部を支持
する支持軸を設けたことを特徴とす・る。更にまた前記
スパッタ電極を、中心部に貫・通入を形成し、前記ター
ゲットを支持する表面・に開口し、上記貫通穴の周囲に
形成されたリン・ング状の空洞を有する陰極と、この陰
極の上記5空洞内に支持されたリング状の磁界発生部と
、。The present invention is characterized in that a medium to be sputtered is provided between the electrodes, and a support shaft is provided that penetrates the center of the sputtering electrode and supports the middle ten cores of the medium. Furthermore, the sputtering electrode is formed with a cathode having a hole in the center thereof, an opening in the surface supporting the target, and a ring-shaped cavity formed around the through hole; a ring-shaped magnetic field generating section supported within the five cavities of the cathode;
上記ターゲットの表面内周部上の空間に位置す。It is located in the space above the inner circumference of the surface of the target.
る如く上記貫通入内に挿入する内側シールドと0、上記
ターゲットの表面外周部上の空間に位置す。The inner shield is inserted into the penetration hole as shown in FIG.
る如く上記陰極に支持された外側シールドと力)。the outer shield and force supported on the cathode as described above).
ら構成したことを特徴とする。It is characterized by being constructed from
以下本発明の実施例を示す第1図および第2゜図につい
て説明する。第1図は本発明の一実施“例を示すスパッ
タ電極構造体の断面図、第2図−はそのスパッタ電極の
他の一例を示す断面図で。The following will explain the embodiments of the present invention with reference to FIGS. 1 and 2. FIG. 1 is a sectional view of a sputter electrode structure showing one embodiment of the present invention, and FIG. 2 is a sectional view showing another example of the sputter electrode structure.
ある。第1図において1および1は2個のスバ。be. In Figure 1, 1 and 1 represent two subas.
ツタ電極にして間隔をおいて対称的に形成され゛ている
。2は円板にじて、上記2個のスパッタ。The vine electrodes are formed symmetrically with intervals. 2 is the above two spatters along the disk.
電極1,1間に芥挿され七いる。3は支持軸にし・て、
上記2個のスパッタ電極1,1′の中心部に形・成され
た貫通穴1・tllA 内を貫通し、中央部に・2個
のセンタハブ4にて上記円板2の表裏両面・を介挿する
如く支持している。上記2個のスバ・ツタ電極1,1は
互いに対称的につぎに述べる構15成をしている。5は
陰極にして円筒形状に形成。A sieve is inserted between the electrodes 1 and 1. 3 is the support shaft,
The through hole 1 tllA formed in the center of the two sputter electrodes 1 and 1' is penetrated, and the two center hubs 4 pass through both the front and back surfaces of the disk 2. I support it as if I were inserting it. The above-mentioned two splinter-shaped electrodes 1, 1 are symmetrical to each other and have a structure 15 described below. 5 is a cathode and is formed into a cylindrical shape.
され、その中心部に上記支持軸3の軸心方向に。at its center in the axial direction of the support shaft 3.
貫通する貫通穴1a、i’aを形成し、上記円板2の。Through-holes 1a and i'a are formed to pass through the disk 2.
対向面に開口するリング状の空洞6を形成して。A ring-shaped cavity 6 is formed that opens on the opposing surface.
いる。7は内側シール忙して、上記貫通穴1a、・・1
〕1cLと支持軸3との間に介挿された軸部74洩 こ
。There is. 7 is an inner seal, and the above-mentioned through holes 1a, . . . 1
] Shaft part 74 inserted between 1cL and support shaft 3.
の軸部74の円板2側端部に後述のターゲットの。A target, which will be described later, is attached to the end of the shaft portion 74 on the disk 2 side.
内周部と、上記円板2との間に介挿される如く。As if inserted between the inner peripheral portion and the disk 2.
固定された内側シール部7bと他端部に本発明装。The present invention is attached to the fixed inner seal portion 7b and the other end.
置全体を挿入密閉容器(図示せず)に保持する5ための
フランジ部70を固定している。8は磁束。A flange portion 70 for holding the entire device in an insertion sealed container (not shown) is fixed. 8 is magnetic flux.
発生機構にして、上記空洞6内に挿入支持され。The generating mechanism is inserted and supported within the cavity 6.
平板をリング状に形成したヨーク9とリング状。The yoke 9 is a ring-shaped flat plate.
の軟性材料にて形成され上記ヨーク9の内周部。The inner peripheral portion of the yoke 9 is formed of a soft material.
に対接する第1の磁極体10と、リング状の永久1′)
磁石にて形成され、上記ヨーク9の外周部に対。a first magnetic pole body 10 in contact with a ring-shaped permanent member 1')
It is formed of a magnet and is attached to the outer periphery of the yoke 9.
接する第2の磁極体11とから形成され、ターゲット1
20円板2の対向面の空間にトンネル状の゛磁力線の分
布(図示せず)を発生させる如くシ゛ている。12はタ
ーゲットにして、Ajl−2%Si(純度“99・99
%)の平板材をリング状に形成し、上記陰゛極5の円板
対向面1b、1bに支持されている。13゜は外側シー
ルにして、上記ターゲット12の外周部と円板2との間
に介挿される如く、上記陰極・5に絶縁材層板(図示せ
ず)を介して支持され2・・ている。14は導水官にし
て、上記陰極5および・ヨーク9に軸心方向に貫通支持
され、その先端“部を上記ターゲット12の第1.第2
磁極体1o、。It is formed from the second magnetic pole body 11 in contact with the target 1.
20 so as to generate a tunnel-like distribution of magnetic lines of force (not shown) in the space on the opposing surface of the disc 2. 12 is the target, Ajl-2%Si (purity “99.99
%) is formed into a ring shape and is supported by the disk facing surfaces 1b, 1b of the cathode 5. 13° is an outer seal, which is supported by the cathode 5 through an insulating layer plate (not shown) so as to be inserted between the outer periphery of the target 12 and the disc 2. There is. Reference numeral 14 designates a water conductor, which is supported through the cathode 5 and the yoke 9 in the axial direction, and its tip portion is connected to the first and second portions of the target 12.
Magnetic pole body 1o.
11側に向って開口し、該導水管14の開口部より゛噴
出する水によって上記ターゲット12を冷却す−・る如
くしている。上記の構成であるから、陰極゛5の空洞6
内に磁束発生機構8を取付け、貫通。The target 12 is cooled by water jetting out from the opening of the water conduit 14. Because of the above configuration, the cavity 6 of the cathode 5
Attach the magnetic flux generation mechanism 8 inside and penetrate it.
穴1cL1a内に内側シール7を、円板20対向面 。Place the inner seal 7 in the hole 1cL1a on the surface facing the disk 20.
1b、1bにターゲット12を取付け、その外周部に。Attach the target 12 to 1b and 1b, and attach it to the outer periphery.
外側シール13を取付けて2個のスパッタ電極 川1.
1′を組立てる。ついで、組立後の2個のスバ・ツタ電
極1,1をそのターゲット12が互いに対向・するよう
に間隔をおいて配置したのち、上記貫・通入icL、l
a内に支持軸3を貫通させて、これら・2個のスパッタ
電極1.1′間中央位置に配置され1゜るように円板2
を2個のセンタハブ4にて支持。Install the outer seal 13 and connect the two sputter electrodes 1.
Assemble 1'. Next, after arranging the assembled two splinter/vine electrodes 1, 1 at a distance so that their targets 12 face each other, the above-mentioned through/through icL,
The support shaft 3 is passed through the inside of the disk 2, and the disk 2 is placed at the center position between these two sputter electrodes 1.1', with an angle of 1°.
is supported by two center hubs 4.
11]3に支持させる。ついで、2個のスパッタ室。11] Supported by 3. Next, there are two sputtering chambers.
極1,1′を支持軸5にそうて移動してそのターゲ。Place the poles 1 and 1' on the support shaft 5 and move them to the target.
ット12と、円板2との距離を調整すれば、2個。If you adjust the distance between the cut 12 and the disc 2, you can get two pieces.
のスパッタ電極1,1′と円板2との中心位置を位−7
,。The center position of the sputter electrodes 1, 1' and the disk 2 is set at -7
,.
・ 7 ・
置決めし、かつターゲット12と円板2との距離を調整
することができる。ついで第1の磁極体10と、第2の
磁極体11によってターゲット12の。7. It is possible to position the target 12 and adjust the distance between the target 12 and the disc 2. Next, the target 12 is formed by the first magnetic pole body 10 and the second magnetic pole body 11 .
円板2の対向面の空間にトンネル状の磁界分前。A tunnel-shaped magnetic field is created in the space on the opposing surface of disk 2.
が発生すると、陽極(図示せず)と、上記陰極゛5との
間に印加された高電圧によりプラズマ状゛イオンが加速
されて上記ターゲット12に衝突す。When this occurs, plasma ions are accelerated by the high voltage applied between the anode (not shown) and the cathode 5 and collide with the target 12.
る。そのため、衝突したプラズマ状イオンによ゛って飛
び出した上記ターゲット12を形成する材。Ru. Therefore, the material forming the target 12 is ejected by the colliding plasma ions.
料の構成原子または粒子がターゲット12よりは1“し
き出て円板2上に付着堆積してターゲット12゛の材料
の薄膜を形成する。つぎに第2図におい′て、13は磁
束発生機構にして、ヨーク14と、こ。The constituent atoms or particles of the material push out from the target 12 by 1" and are deposited on the disk 2 to form a thin film of the material of the target 12. Next, in FIG. 2, 13 is a magnetic flux generating mechanism. Then, York 14 and this.
のヨーク14の端面内周部に対接するリング状の゛軟磁
性材料4からなる第1の磁極体15と、上記1゛ヨーク
14の端面外周部に対接するリング状の軟。a ring-shaped first magnetic pole body 15 made of soft magnetic material 4 that is in contact with the inner circumference of the end surface of the yoke 14;
磁性材料4からなる第2の磁極体16と、これら゛第1
の磁極体15および第2の磁極体16間に配置゛された
リング状の軟磁性材料からなる第6の磁極体17とを互
いに同一中心位置になるように位置パ・ 8 ・
決めし、これらの磁極体15,16.17間にこれらに
゛励磁するためのコイル18α、18bを設けている。a second magnetic pole body 16 made of magnetic material 4;
The magnetic pole body 15 and the sixth magnetic pole body 17 made of a ring-shaped soft magnetic material disposed between the second magnetic pole bodies 16 are positioned so that they are in the same center position with respect to each other. Coils 18α and 18b are provided between the magnetic pole bodies 15, 16, and 17 to excite them.
。
上記以外は第2図と同一であるから、第2図と同一符号
をもって示す。上記の構成であるから、。. Since the parts other than the above are the same as those in FIG. 2, they are indicated by the same reference numerals as in FIG. Because of the above configuration.
本実施例において第1図に示す実施例との動作の相異点
は第1の磁極体1oと第2の磁極体16に。The difference in operation between this embodiment and the embodiment shown in FIG. 1 is in the first magnetic pole body 1o and the second magnetic pole body 16.
よる磁束がともに同時に制御できる。その他プ。Both magnetic fluxes can be controlled simultaneously. Others.
ラズマ領域の発生に至る過程は前記の実施例と。The process leading to the generation of the lasma region is the same as the above example.
同じである。It's the same.
〔発明の効果〕 1・・
本発明は以上述べたる如くであるから、簡単な構成にて
スパッタされる円板(媒体)の表裏。[Effects of the invention] 1.
Since the present invention is as described above, the front and back surfaces of a disk (medium) to be sputtered can be formed using a simple structure.
両面を同時に薄膜を形成することができ、開口率が15
%の従来のシールドを使用した場合に比・較して約6〜
7倍の成膜速度を得ることができる。A thin film can be formed on both sides at the same time, and the aperture ratio is 15.
Approximately 6% compared to when using a conventional shield
It is possible to obtain a film formation rate seven times faster.
また円板の表裏両面を同時に成膜するので、膜。Also, since the film is formed on both the front and back sides of the disc at the same time,
応力を均一化することができこれによって円板。This allows you to equalize the stress on the disc.
に歪が発生するのを防止することができる。さ。This can prevent distortion from occurring. difference.
らに円板およびスパッタ電極の中上・位置を容易に。Furthermore, the middle and upper positions of the disk and sputtering electrode can be easily adjusted.
位置決めすることができ、かつ両者の中心位置を・保持
した状態で支持軸にそうてターゲットと円・・板との距
離を適宜選択することができるので操・作が極めて容易
になる効果を有する。It can be positioned, and the distance between the target and the circle/plate can be selected appropriately by placing it on the support shaft while maintaining the center position of both, which has the effect of making operation extremely easy. .
第1図は本発明の実施例を示すスパッタ電極・構造体の
断面図、第2図はそのスパッタ電極の・他の一実施例を
示す断面図である。 ・1.1′・・・スパッ
タ電極
2・・・円板
3・・・支持軸 11:4
・・・センタハブ
5・・・陰極
6・・・空洞
7・・・内側シール
8.13−・・磁束発生機構 1.
。
9.14−ヨーク
10.15−・・第1の磁極体
11、i6・・・第2の磁極体
12・・・ターゲット
13・・・外側シール 2゜・
11・
14′・・・導水官
17・・・第3の磁極体
186L、18b・・・コイル
・(・ゝFIG. 1 is a cross-sectional view of a sputter electrode/structure showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing another embodiment of the sputter electrode.・1.1'...Sputter electrode 2...Disk 3...Support shaft 11:4
... Center hub 5 ... Cathode 6 ... Cavity 7 ... Inner seal 8.13 - ... Magnetic flux generation mechanism 1.
. 9.14-Yoke 10.15-...First magnetic pole body 11, i6...Second magnetic pole body 12...Target 13...Outer seal 2°.
11・ 14'...Water conductor 17...Third magnetic pole body 186L, 18b...Coil (・ゝ
Claims (1)
筒の中心軸に軸対象に配置されたものと、該磁場発生手
段を冷却する液体を導入する管と、 前記ターゲット及び前記磁場発生手段を支 持する陰極と、 前記ターゲット外周近傍に配置されたシー ルドとから成るスパッタ電極構造体を有するスパッタ装
置 2、特許請求の範囲第1項記載のスパッタ装置において
、 前記スパッタ電極構造体を前記円筒の中心 軸を一致するよう対向して配置し、 該空隙にスパッタ成膜対象を、前記円筒の 内側に貫通した軸により配置したスパッタ装置。[Claims] 1. A cylinder, a ring-shaped target arranged around the cylinder and made of a material to be sputtered, and a plurality of magnetic field generators that generate a magnetic field to confine plasma on the target surface. means disposed axially symmetrically about the central axis of the cylinder; a tube for introducing liquid for cooling the magnetic field generating means; a cathode supporting the target and the magnetic field generating means; and a region near the outer periphery of the target. A sputtering apparatus 2 having a sputtering electrode structure comprising a shield disposed in the cylinder, and a sputtering apparatus according to claim 1, wherein the sputtering electrode structures are arranged facing each other so that the central axis of the cylinder coincides with the sputtering electrode structure. and a sputtering apparatus in which an object to be sputtered and film-formed is placed in the gap by a shaft penetrating inside the cylinder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4656085A JPS61207575A (en) | 1985-03-11 | 1985-03-11 | Sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4656085A JPS61207575A (en) | 1985-03-11 | 1985-03-11 | Sputtering device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61207575A true JPS61207575A (en) | 1986-09-13 |
JPH0585632B2 JPH0585632B2 (en) | 1993-12-08 |
Family
ID=12750704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4656085A Granted JPS61207575A (en) | 1985-03-11 | 1985-03-11 | Sputtering device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61207575A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006131973A (en) * | 2004-11-08 | 2006-05-25 | Shincron:Kk | Thin-film-forming method and thin-film-forming apparatus |
WO2010134354A1 (en) * | 2009-05-22 | 2010-11-25 | 昭和電工Hdシンガポール ピーティイー リミテッド | Method for forming carbon film, method for manufacturing magnetic recording medium, and apparatus for forming carbon film |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5569256A (en) * | 1978-11-14 | 1980-05-24 | Anelva Corp | Sputtering unit |
JPS60255974A (en) * | 1984-05-17 | 1985-12-17 | バリアン・アソシエイツ・インコーポレイテツド | Sputter coating source with plural target rings |
-
1985
- 1985-03-11 JP JP4656085A patent/JPS61207575A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5569256A (en) * | 1978-11-14 | 1980-05-24 | Anelva Corp | Sputtering unit |
JPS60255974A (en) * | 1984-05-17 | 1985-12-17 | バリアン・アソシエイツ・インコーポレイテツド | Sputter coating source with plural target rings |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006131973A (en) * | 2004-11-08 | 2006-05-25 | Shincron:Kk | Thin-film-forming method and thin-film-forming apparatus |
WO2010134354A1 (en) * | 2009-05-22 | 2010-11-25 | 昭和電工Hdシンガポール ピーティイー リミテッド | Method for forming carbon film, method for manufacturing magnetic recording medium, and apparatus for forming carbon film |
US9111566B2 (en) | 2009-05-22 | 2015-08-18 | Showa Denko HD Singapore Pte. Ltd. | Carbon film forming method, magnetic-recording-medium manufacturing method, and carbon film forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0585632B2 (en) | 1993-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |