JPH0585517B2 - - Google Patents
Info
- Publication number
- JPH0585517B2 JPH0585517B2 JP13325589A JP13325589A JPH0585517B2 JP H0585517 B2 JPH0585517 B2 JP H0585517B2 JP 13325589 A JP13325589 A JP 13325589A JP 13325589 A JP13325589 A JP 13325589A JP H0585517 B2 JPH0585517 B2 JP H0585517B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- vapor pressure
- seed crystal
- growth
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 111
- 239000004065 semiconductor Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 20
- 238000002109 crystal growth method Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000003708 ampul Substances 0.000 description 17
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 9
- 239000000470 constituent Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13325589A JPH02311393A (ja) | 1989-05-26 | 1989-05-26 | シード結晶上へのエピタキシャル層の結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13325589A JPH02311393A (ja) | 1989-05-26 | 1989-05-26 | シード結晶上へのエピタキシャル層の結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02311393A JPH02311393A (ja) | 1990-12-26 |
| JPH0585517B2 true JPH0585517B2 (fr) | 1993-12-07 |
Family
ID=15100341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13325589A Granted JPH02311393A (ja) | 1989-05-26 | 1989-05-26 | シード結晶上へのエピタキシャル層の結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02311393A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5499600A (en) * | 1993-12-24 | 1996-03-19 | Stanley Electric Co., Ltd. | Methods for compound semiconductor crystal growth from solution |
-
1989
- 1989-05-26 JP JP13325589A patent/JPH02311393A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02311393A (ja) | 1990-12-26 |
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