JPH0582810A - Photoelectric transfer device - Google Patents

Abstract

PURPOSE:To ensure easy manufacture a size easy to handle easy mounting of a light receiving element, and shorten the length of light path, concerning a photoelectric transfer device equipped with a light receiving element and a mirror. CONSTITUTION:This device comprises a supporting board 9, which has, at one end, a mirror face 10 inclined at an angle of 45 deg. to the direction of light advance, and a light receiver 5, which is equipped with light receiving elements 5a and 5b overhanging the mirror face 10, with the light receiving areas downward, and has a bonding region 5e being bonded to the supporting board 9 in the condition that the light receiving region overhangs the mirror face 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device,
More specifically, the present invention relates to a photoelectric conversion device including a light receiving element and a mirror.

[0002]

2. Description of the Related Art A light receiving device for coherent communication is shown in FIG.
A coherent receiver having a configuration shown in 2 is used.

This is a directional coupler 101, a light receiver 104 having two light receiving elements 102 and 103, and a microwave amplifier 10.
It is a balanced photoelectric conversion device composed of 5 and has the advantages of using light more efficiently and reducing excess noise of local oscillation light. The light receiver 104 is hermetically sealed from the directional coupler 101.

Further, the two optical waveguides 101a and 101b on the output side of the directional coupler 101 are arranged in parallel as shown in FIG. 12 (b), and the light output from the two optical waveguides 101a and 101b are arranged in two lenses 106 and 10.
After focusing by 7, the light receiving elements 102, 10 are passed through the window 108.
However, in order to improve the coupling efficiency and prevent crosstalk, it is necessary to reduce the beam diameter after collimation to, for example, 100 μm or less.

The reason is as follows. Receiver 104
There is a front-illuminated type or a back-illuminated type as shown in FIGS. 13 (a) and 13 (b), and its appearance is, for example, as shown in FIG. 13 (c). Monolithic lenses 102b and 103b on the incident light side
Are formed. Light receiving elements 102a and 103a are formed on the surface facing the monolithic lenses 102b and 103b, and an electric signal is taken out from the middle between the light receiving elements 102a and 103a.

Therefore, if the distance between the two light receiving elements 102a and 103a becomes wider, the time required for the signal to propagate through the wiring becomes longer and the stray capacitance increases. Further, increasing the chip size reduces the number of devices that can be manufactured from one wafer. Therefore, it is desirable that the distance between the two light receiving elements 102a and 103a be smaller than about 200 μm. For the above reasons, it is necessary to reduce the beam diameter after collimation to, for example, 100 μm or less.

Further, since the distance between the two light receiving elements 102a and 103a is 200 μm or less, the diameter of the lens used for parallelization is also limited to 100 μm or less. When a lens having a specific diameter is used, the diameter of the condensed light beam increases as the condensing position moves away from the lens. In order to make the diameter of the light beam condensed using a lens of 100 μm or less 100 μm or less, it is necessary to set the condensing position to about 1.5 mm or less.

Therefore, it is necessary to make the distance between the light receiving elements 102 and 103 and the lenses 106 and 107 in FIG. 12 as close as possible (for example, about 1.5 mm or less when the distance between the light receiving elements 102a and 103a is 200 μm).

Next, when the photoelectric conversion device is to be mounted on a printed circuit board with high density, it is preferable that the device is thin.
As illustrated in FIG. 14, the directional coupler 101 and the optical receiver 10
4. There is a demand for thinning the device by arranging the microwave amplifier 105 and the like in the light traveling direction and incorporating it in the package 109. 14 (a) is a plan view and FIG. 14 (b) is
Is a side view, (c) is the X of FIG.
It is a X-ray sectional view.

In this case, the electric wiring 11 of the light receiving elements 102, 103
Since 0 is in the direction along the light receiving surface of the light receiver 104, it is taken out from the light receiver 104 in a direction orthogonal to the traveling direction of the light, bent at a right angle on the way, and the microwave amplifier 10 in the subsequent stage is
Connected to 4.

However, the electrical wiring 110 bent at a right angle
However, since high frequency characteristics are deteriorated due to signal reflection and the like, this cannot be adopted. Therefore, as shown in FIG. 13 (d), it is desirable that the wirings of the light receiving elements 102 and 103 should be oriented in the same direction as the direction of the input end face of the microwave amplifier 105. Light receiving element
It must be bent at a right angle to 102,103. In this case, care must be taken to reduce the distance between the directional coupler 101 and the light receiving surfaces of the light receiving elements 102 and 103 to suppress the spread of the light flux.

Therefore, it is well known in the prior art to provide the prism 111 and the flat plate mirror shown in FIG. 15 (a) in order to bend the optical path in the photoelectric conversion device. However, the prism 111 needs to be downsized to about 3 mm on each of the two sides a and b which are orthogonal to each other, but its processing is difficult. Further, even if the prism 111 or the flat plate mirror can be downsized, it has a drawback that it is difficult to handle and mount it. On the other hand, if the sides a and b of the prism 111 are enlarged so as to be easily fixed, the light receiving elements 102 and 103
There is a drawback that the optical path to reach is long.

As a method for solving this drawback, FIG.
As shown in (b), the light receiving element 10 is formed on the bottom of the semiconductor substrate 112.
While forming 2,103, there is one in which an oblique reflecting surface 113 is formed on the upper part thereof. According to this device, the semiconductor substrate
The light incident on the inside of 112 is reflected by the reflecting surface 113 inside thereof and is irradiated on the light receiving elements 102 and 103.

In this case, since mechanical polishing cannot be used for forming the reflecting surface 113, a wet or dry chemical etching method is used for forming the reflecting surface 113.

[0015]

However, the reflecting surface 113 is made 45 degrees in the light traveling direction by the chemical etching method.
It is difficult to incline, and the reflected light is incident on the light receiving elements 102 and 103 at an angle as shown by the broken line in FIG.

In addition, the reflecting surface 113 formed by etching has rough irregularities, which causes reflection loss. Also, like the prism 111 shown in FIG. 15A, the light passing distance c with respect to the optical path length. , E does not become so small.

The present invention has been made in view of the above problems, and has an optical path changer that is easy to manufacture, has a size that is easy to handle, can easily mount a light receiving element, and can shorten the optical path length. It is an object of the present invention to provide a photoelectric conversion device having the same.

[0018]

As shown in FIG. 3, the above-mentioned problem is solved by the support substrate 9 having a mirror surface 10 inclined at an angle of 45 degrees with respect to the light traveling direction at one end, and the mirror surface 10. Light receiving elements 5a and 5b having a light receiving area overhanging on the lower surface side, and the light receiving area is formed on the mirror surface 1
It is achieved by a photoelectric conversion device comprising: a light receiver 5 having an adhesion region 5e which is adhered to the support substrate 9 in a state of being projected to 0.

Alternatively, the above-mentioned photoelectric conversion device is characterized in that the supporting substrate 9 is made of a material other than metal, and the reflecting film 11 is formed on the mirror surface 10.

[0020]

[Operation] According to the present invention, a mirror surface 10 inclined at 45 degrees is formed at one end of a support substrate 9 on which the light receiver 5 is placed, and the light receiving elements 5a and 5b of the light receiver 5 are projected on the mirror surface 10. I have to.

Since the mirror surface 10 is formed on the end surface of the support substrate 9, it is easy to form it by mechanical polishing, and it is possible to finish it to a surface with few irregularities, and it is easy to produce.

Moreover, since the mirror surface 10 is integrated with the large support substrate 9, its handling is easy and the alignment is easy. Further, since the mirror surface 10 is integrally formed on the end portion of the support substrate 9, the distance (d ₁ ) between the tip of the mirror surface 10 and the sealing window is shortened to 1 mm or less, and the light receiving surface of the light receiver 5 and the mirror surface are reduced. It is easy to reduce the distance (d ₂ ) from 10 to 100 μm.

Further, the light receiver 5 is mounted close to one end of the support substrate 9 and its light-receiving surface is merely arranged 45 ° above the mirror surface 10, which facilitates the mounting and also in the traveling direction of light. The light reflected by the mirror surface 10 inclined by 45 degrees enters the light receiving elements 5a and 5b on the support substrate 9 perpendicularly, so that the coupling loss becomes small.

When the support substrate 9 is made of a material other than metal, the reflectance is increased by forming the reflection film 11 on the mirror surface 10.

[0025]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view showing an apparatus according to an embodiment of the present invention, and FIG. 2 is a plane sectional view in which the upper lid of the apparatus is omitted.
FIG. 3 is a side view showing the main part thereof.

In the figure, reference numeral 1 is a photoelectric conversion device for converting an optical signal emitted from the waveguides 101a and 101b of the directional coupler 101 shown in FIG. Is provided with a sealing window 4 in which a glass plate 3 having a thickness of 100 μm is fitted, and inside the package 2, a photodetector 5, a first wiring board 6, a GaAs-FET are arranged in the light traveling direction. A microwave amplifier 7 made of a hybrid IC and a second wiring board 8 are housed.

The light receiver 5, the wiring boards 6, 8 and the like are
It is mounted on a support substrate 9 made of sapphire, quartz, metal or the like, and is fixed by an adhesive flux such as gold tin (AuSn).

The above-mentioned supporting substrate 9 is made of stainless steel, sapphire or other inorganic material and has a thickness of 200 μm or less.
It is formed with a length of 20 mm and a width of 6 mm, and one end thereof has an upward angle of 45 with respect to the upper surface as shown in FIGS.
A mirror surface 10 that is inclined is formed by mechanical polishing, and a reflective film 11 made of chromium, SiO ₂ , Si ₃ N ₄ or the like is formed on the mirror surface 10.
Are coated in a single-layer or multi-layer structure. As shown in FIG. 3, the mirror surface 10 can be made extremely small in height a and length b to 200 μm or less, respectively, and the distance from the sealing window 4 to the light receiving surfaces of the light receiving elements 5a and 5b is d ₀ ± 200 μm.
Can be reduced to m.

The supporting substrate 9 is arranged so that the tip of the mirror surface 10 is separated from the sealing window 4 by 1 mm or less, and the AuSn eutectic metal film 9b having a thickness of 3 μm is electron beam evaporated on the upper surface and the lower surface. Is plated with a gold film 9a having a thickness of 1 μm or less,
The lower surface of the supporting substrate 9 is thermally fused to the AuSn film on the bottom surface of the package 2. The AuSn eutectic metal film 9b is an adhesive material that adheres to the photodetector 5, and the gold film 9a enhances the adhesiveness to a low melting point metal (Sn or the like) used for adhesion.

The above-mentioned light receiver 5 is, as shown in FIG.
Two balanced type light receiving elements 5a and 5b formed on the same substrate
And a bonding area 5e adjacent to the light receiving elements 5a and 5b. When this is used for a coherent receiver, crosstalk is small and coupling efficiency is high.
High-speed operation can be realized.

The light receiving surfaces of the two light receiving elements 5a and 5b are 125
They are separated by an interval of .mu.m or less and are covered with monolithic lenses 5c and 5d having a diameter of 80 .mu.m. The size of the substrate of the light receiver is 600 μm in length in the light traveling direction and 400 μm in width, the light receiving elements 5a and 5b are regions 200 μm from the ends in the light traveling direction, and the bonding region 5e is the remaining portion.

As shown in FIGS. 3 and 5, the light receiver 5 has its light-receiving surface overhanging the mirror surface 10 of the support substrate 9 and is opposed to the normal at an angle of 45 °. In this state, the Au film 5k in the adhesion region 5e is aligned with the AuSn eutectic metal film 9b in the supporting substrate 9 and heat-bonded.

By directly adhering as described above, the optical path length can be shortened, and the light incident on the mirror surface 10 in the horizontal direction is bent in the vertical direction. For the light receiving elements 5a and 5b of the light receiver 5, for example, a Twin-PIN photodiode as shown in FIG. 5 (c) is used, and this element is n ⁺ on the semi-insulating InP substrate 51.
Type InP layer 52, non-doped InGaAs absorption layer 53 and n ⁻ type
The InP layer 54 is laminated in a mesa type, and the n ⁻ -type InP layer 54 is laminated.
From the upper surface to the middle of the absorption layer 53, and a p ⁺ type diffusion layer 55 is provided to diffuse Zn. In addition, the light receiving element 5a,
The monolithic lenses 5c and 5d described above are formed on the lower surface of the InP substrate 51 below the 5b. Further, the p electrode 56 is attached to the upper surface of the n ⁻ type InP layer 54, and the n electrode 57 is connected to the side portion of the n ⁺ type InP layer 52.

Further, the two light receiving elements 5a and 5b are connected in series through the electrodes 56 and 57 as shown in FIG. 12, and the n electrode 57 and the p electrode 56 at both ends thereof are connected to InP as shown in FIG. It extends to the first and second bonding pads 5f and 5g through the bias wiring pattern on the substrate 51, and the node between the elements is connected to the third bonding pad 5h.

The above-mentioned first wiring board 6 is one in which three electrode wirings 6a to 6c are formed on a ceramic, and the electrode wirings 6a and 6b on both sides thereof are formed of a gold plating film.
One end thereof is electrically connected to the first and second bonding pads 5d and e of the light receiver 5, and the other end thereof is connected to the lead terminals 12 and 13 on both sides of the package 2 and led out to the outside.
A predetermined bias voltage is applied. Further, the central electrode wiring 6c is a strip line, and one end thereof is the third bonding pad 5f of the photodetector 5 described above.
To the input pad 7a of the microwave amplifier 7 of the next stage via the Au wire.

The microwave amplifier 7 described above includes the light receiver 5
A circuit that amplifies the signal flowing to the node of
b is connected to the lead terminal 14 on the package side via the bonding Au wire and the bonding pad 8a on the second wiring substrate 8 and is led out to the outside.

In the figure, reference numeral 15 indicates waveguides 101a and 101b.
And a lens interposed between the light receiving elements 5a and 5b. Next, the operation of the above-described embodiment will be described.

In the above embodiment, the directional optical coupler
The light emitted from the two waveguides 101a and 101b on the output side of 101 is focused by the lens 15, passes through the sealing window 4, and then is reflected at one end of the support substrate 9 on the mirror surface 10 inclined by 45 °. The reflected light 11 is incident on the two light receiving elements 5a and 5b, is electrically converted, is amplified by the microwave amplifier 7, and is sent to the outside through the lead terminal 14.

In this case, since the mirror surface 10 is obtained by polishing the end surface of the support substrate 9 so as to finish the surface with less unevenness,
It is easy to incline the angle of the reflecting surface of the mirror surface 10 to 45 °, and since it is integrated with the large supporting substrate 9, its handling is easy and alignment is easy.

Further, since the mirror surface 10 is integrally formed on the end portion of the support substrate 9, the distance d ₁ between the tip of the mirror surface 10 and the glass plate 3 of the sealing window 4 is close to 1 mm or less, and the light receiver 5 It is easy to reduce the distance d ₂ between the light receiving surface and the mirror surface 10 to 100 μm.

Further, the photodetector 5 is mounted close to one end of the support substrate 9 and its light-receiving surface is only arranged 45 ° above the mirror surface 10, which facilitates its mounting and also in the traveling direction of light. The light reflected by the mirror surface 10 inclined by 45 ° enters the light receiving elements 5a and 5b on the support substrate 9 perpendicularly, so that the coupling loss becomes small.

Next, another example of the above-mentioned light receiver 5 will be described with reference to FIG. The light receiver 5 shown in FIG.
Although it is formed flat with the other regions, it is also possible to form a step 5i as shown in FIG. 6 so as to project it to the same height as the monolithic lenses 5c and 5d. In the figure, reference numeral 61
The Au film is shown.

The process of forming the monolithic lenses 5c and 5d and the step 5f of the adhesion region 5c in this case will be described with reference to FIG. First, after forming the light receiving elements 5a and 5b on the InP substrate 51, a photoresist 62 having a thickness of 20 μm is applied on the side opposite to the light receiving surface, and this is patterned by photolithography to form the light receiving regions of the light receiving elements 5a and 5b. Then, the photoresist 62 having a radius of 80 μm is left, and the adhesive region 5e where the light receiving element is not formed is covered with the photoresist 62 (FIG. 7A).

After this, the photoresist 62 is changed to 200-
Photoresist 62 when baked at a temperature of 250 ° C.
Has a rounded periphery and a hemispherical shape in the light receiving area (see FIG. 7).
(b)).

Then, after the photoresist 62 is cooled as it is, the photoresist 62 and the InP substrate 51 are dry-etched by ion milling, the photoresist 62 and the InP substrate 51 are etched at the same rate, and the shape of the photoresist 62 is InP. It is transferred to the substrate 51. As a result, hemispherical projections having a diameter of 80 μm are formed in the light receiving area on the side opposite to the light receiving elements 5a and 5b, which are used as monolithic lenses 5c and 5d (FIG. 7).
(c)).

In addition, a step 5i is formed at the boundary with another area in the adhesion area 5e, and the upper surface becomes the adhesion area 5e so that the Au film is adhered and directly adhered onto the support substrate 9. Become. Moreover, the step 5i raises the monolithic lenses 5c and 5d and does not hit the mirror surface 10. The step 5i may be higher than the monolithic lenses 5c and 5d.

When the light receiver 5 is bonded, the deviation of the incident angle of light on the light receiving elements 5a and 5b becomes the biggest problem, but the tolerance of the optical axis alignment of the monolithic lenses 5c and d is 70 μm. As long as the mounting angle is offset by 10 ° or more, it does not hinder the connection.

Next, the process of forming the mirror surface 10 and the reflection film 11 on the tip of the support substrate 9 will be described with reference to FIG. First, a quartz substrate 80 is used as a material plate of the support substrate 9, and the length arranged in the light traveling direction is 20 mm, the width in the direction orthogonal thereto is 50 mm, and the thickness is 200 μm.

Then, as shown in FIG. 8 (a), a jig 81 in which the two holding surfaces are inclined by 45 ° in one direction with respect to the lower surface.
An angle of 45 ° from the polishing surface is determined by sandwiching one or several quartz substrates 80 with a and b. When sandwiching a plurality of quartz substrates 80, an epoxy adhesive is applied between the glass substrates 80 to bond them to each other to prevent positional deviation (FIG. 8 (b)). At this time, no adhesive is applied between the jigs 81a and 81b.

When a plurality of substrates are polished at the same time, a large amount can be collectively polished, the polishing angle is accurate, and a thin substrate can be polished with a high yield. Next, the quartz substrate 80 is polished with a polishing agent of No. 3000 or more so that the end portions thereof become flat, and the mirror surface 10 inclined by 45 ° with respect to the lower surface of the substrate is formed (FIG. 8C). After that, the polished one is put into trichlene, the trichlene is heated and boiled to dissolve the epoxy resin, and the plurality of quartz substrates 80 are separated. As a result, the supporting substrate 9 shown in FIG. 9D is completed.

In this step, the mirror surface 10 was inclined only at one end of the quartz substrate 80. However, as shown in FIG. 11A, the mirror surface 10 is formed at both ends, and after separation, the quartz substrate 80 is divided into two parts, as shown in FIG. You may make it a shape like (d).

The quartz substrate 80 on which the mirror surface 10 is formed
Has a predetermined width, for example, 6 m before or after the last step or the formation of the reflection film 11 and the fusion material, as shown by the broken line in FIG. 9 (e).
It is divided into a plurality of m widths.

Next, the vapor deposition method, the sputtering method, the thermal CVD method,
A reflection film 11 made of chromium is formed on the upper surface of the support substrate 9 and the mirror surface 10 by using a plasma CVD method or another film forming technique.
It is formed to a thickness of 000Å (Fig. 9 (f)).

Then, after applying a positive photoresist 81 on the reflection film 11, the mirror surface 10 inclined by 45 ° is formed.
Is covered with a mask 82, and the photoresist 81 in the other regions is exposed to ultraviolet rays (FIG. 9 (g)). Subsequently, when development is performed, the photoresist 81 other than the mirror surface 10 is removed as shown in FIG.

Thereafter, an adhesive flux, for example, an AuSn eutectic metal film 9a is vapor-deposited on the support substrate 9 (FIG. 10).
(i)). Further, the opposite surface of the mirror surface 10 is covered with a mask 83,
A metal vapor deposition film, for example, a gold film 9b is laminated on the lower surface of the support substrate 9 (FIG. 10 (j)).

After that, the photoresist 81 is removed and the AuSn eutectic metal film 9a in the mirror surface 10 region is removed, whereby the same one as in FIG. 4 is completed (FIG. 10 (k)). Note that FIG. 10 (k)
In, the AuSn eutectic metal film 9a remains on the supporting substrate 9, but there is no particular problem. When a metal is used as the material of the support substrate 9, the mirror surface 10 polished at 45 ° at its end has a high reflectance, and it is not necessary to apply the reflection film 11 on it.

Further, in the above embodiment, the supporting substrate 9
Although the wiring boards 6 and 8 are mounted on the upper side, it is also possible to directly form the circuit pattern, the strip line or the like on the upper surface thereof. However, when the support substrate 9 is made of a metal material, one or more dielectric films are coated on the upper surface of the support substrate 9 to form a circuit pattern or the like thereon.

Next, another method of manufacturing the support substrate will be described with reference to FIG. First, as shown in FIG. 11B, a plurality of quartz substrates 80 having a length of 100 mm, a width of 100 mm and a thickness of 200 μm are prepared, and these are laminated with an epoxy adhesive. In this case, the positions of the quartz substrates 80 are adjusted so that the peripheral surfaces of the quartz substrates 80 are flat.

Then, using a diamond cutter having a thin blade, as shown by the broken line in FIG. 11 (c), it is cut at an inclination angle of 45 ° with respect to the boundary surface of each quartz substrate 80. At this time, the quartz substrate 80 after cutting is cut so that the length thereof is 40 mm. The state after this cutting is as shown in FIG. Subsequently, both sides of the inclined cut surface are polished.

Then, the polished quartz substrate 80 is put in trichlene, and the trichlene is heated and boiled to dissolve and decompose the epoxy resin, so that one having inclined mirror surfaces 10 at both ends is completed.

Next, when the quartz substrate 80 is cut at the center,
The support substrate 9 shown in FIG. 9D is completed. After this, processing is performed by the procedure shown in FIG. 9 (f) and thereafter, and finally cut into a predetermined width, for example, a width of about 6 mm.

Although the light receiving element of the above-described embodiment is of the type in which light is incident on the upper surface of the substrate and the lower surface thereof is described, the light receiving element is formed on the lower surface of the substrate and light is emitted from the bottom. What is irradiated may be applied.

[0063]

As described above, according to the present invention, a mirror surface inclined by 45 degrees is formed at one end of a support substrate on which a light receiver is mounted, and the light receiving element of the light receiver is projected on the mirror surface. Therefore, it is easy to form the mirror surface by mechanical polishing, and it is possible to finish the surface with less unevenness, and it is easy to produce.

Moreover, since the mirror surface is integrated with the large supporting substrate, its handling is easy and the alignment can be done easily. Further, since the mirror surface is integrally formed on the end portion of the support substrate, the distance between the tip of the mirror surface and the sealing window can be shortened to 1 mm or less, and the distance between the light receiving surface of the light receiver and the mirror surface can be reduced to 10 mm.
It becomes easy to reduce the size to 0 μm.

Furthermore, the light receiver is mounted close to one end of the support substrate, and its light receiving surface is only arranged 45 degrees above the mirror surface, and its mounting is easy, and moreover, it is easy to mount in the light traveling direction. The light reflected by the mirror surface inclined at 45 degrees enters the light receiving element on the supporting substrate perpendicularly, so that the coupling loss can be reduced.

Further, when the supporting substrate is made of a material other than metal, since the reflecting film is formed on the mirror surface, the reflectance can be increased.

[Brief description of drawings]

FIG. 1 is a side sectional view showing an apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view showing an apparatus according to an embodiment of the present invention.

FIG. 3 is a side view of a main part of an apparatus according to an embodiment of the present invention.

4A and 4B are a plan view and a side view showing an example of a support substrate applied to an apparatus according to an embodiment of the present invention.

FIG. 5 is a side view showing an example of a light receiver applied to an apparatus according to an embodiment of the present invention.

6A and 6B are a side view and a plan view showing a second example of the photodetector applied to the device of one embodiment of the present invention.

FIG. 7 is a side view showing a manufacturing process of a second example of a light receiver applied to the device of one embodiment of the present invention.

FIG. 8 is a side view (No. 1) showing an example of the manufacturing process of the supporting substrate applied to the apparatus according to the embodiment of the present invention.

FIG. 9 is a side view (No. 2) showing an example of the manufacturing process of the supporting substrate applied to the apparatus according to the embodiment of the present invention.

FIG. 10 is a side view (No. 3) showing an example of the manufacturing process of the supporting substrate applied to the device according to the embodiment of the present invention.

FIG. 11 is a side view showing another example of the manufacturing process of the support substrate applied to the device according to the embodiment of the present invention.

FIG. 12 is a schematic configuration diagram showing an example of a photoelectric conversion device.

FIG. 13 is an external view showing an example of a light receiver.

FIG. 14 is a cross-sectional view showing an example of a conventional device.

FIG. 15 is a side view showing an example of a reflecting mirror used in a conventional device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Photoelectric conversion device 2 Package 3 Glass plate 4 Sealing window 5 Light receiver 5a, b Light receiving element 5c Adhesion area 6, 8 Wiring board 7 Microwave amplifier 9 Support substrate 10 Mirror surface 11 Reflective film 12-14 Lead terminals

Claims (2)

[Claims] 1. A support substrate (9) having at one end a mirror surface (10) inclined at an angle of 45 degrees with respect to the light traveling direction, and a light receiving region projecting above the mirror surface (10) on the lower surface side. A light receiver (5) having a light-receiving element (5a, 5b) and having an adhesive area (5e) adhered to the support substrate (9) in a state where the light-receiving area is projected on the mirror surface (10). A photoelectric conversion device comprising: 2. The support substrate (9) is made of a material other than metal, and a reflective film (11) is formed on the mirror surface (10).
The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device is formed.