JPH0582467B2 - - Google Patents
Info
- Publication number
- JPH0582467B2 JPH0582467B2 JP59196754A JP19675484A JPH0582467B2 JP H0582467 B2 JPH0582467 B2 JP H0582467B2 JP 59196754 A JP59196754 A JP 59196754A JP 19675484 A JP19675484 A JP 19675484A JP H0582467 B2 JPH0582467 B2 JP H0582467B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film forming
- substrate
- deposited
- atomic beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 27
- 238000010884 ion-beam technique Methods 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 18
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 description 31
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical group N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002003 electron diffraction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- -1 Conventionally Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19675484A JPS6176662A (ja) | 1984-09-21 | 1984-09-21 | 薄膜形成方法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19675484A JPS6176662A (ja) | 1984-09-21 | 1984-09-21 | 薄膜形成方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6176662A JPS6176662A (ja) | 1986-04-19 |
| JPH0582467B2 true JPH0582467B2 (zh) | 1993-11-19 |
Family
ID=16363055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19675484A Granted JPS6176662A (ja) | 1984-09-21 | 1984-09-21 | 薄膜形成方法および装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6176662A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0742571B2 (ja) * | 1986-07-11 | 1995-05-10 | 三菱重工業株式会社 | Ｃｂｎ被覆法 |
| JPS63262457A (ja) * | 1987-04-20 | 1988-10-28 | Nissin Electric Co Ltd | 窒化ホウ素膜の作製方法 |
| JP2789651B2 (ja) * | 1989-03-07 | 1998-08-20 | 日新電機株式会社 | 窒化ホウ素膜の形成方法 |
| JP2875892B2 (ja) * | 1990-12-20 | 1999-03-31 | 三菱重工業株式会社 | 立方晶窒化ほう素膜の形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617632A (en) * | 1979-07-20 | 1981-02-19 | Nec Corp | Converging method for ion |
-
1984
- 1984-09-21 JP JP19675484A patent/JPS6176662A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617632A (en) * | 1979-07-20 | 1981-02-19 | Nec Corp | Converging method for ion |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6176662A (ja) | 1986-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |