JPH0582304B2 - - Google Patents
Info
- Publication number
- JPH0582304B2 JPH0582304B2 JP23393584A JP23393584A JPH0582304B2 JP H0582304 B2 JPH0582304 B2 JP H0582304B2 JP 23393584 A JP23393584 A JP 23393584A JP 23393584 A JP23393584 A JP 23393584A JP H0582304 B2 JPH0582304 B2 JP H0582304B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heating resistor
- substrate
- glass layer
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000011521 glass Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/345—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、基板の端面方向に発熱抵抗体を形成
するようにしたサーマルヘツドおよびその製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a thermal head in which a heating resistor is formed in the direction of an end surface of a substrate, and a method for manufacturing the same.
従来、基板の端部に発熱抵抗体を形成したサー
マルヘツドとしては、例えば、特公昭40−6040号
公報および特公昭48−38265号公報などに示され
る如きサーマルヘツドが知られている。第７図は
このようなサーマルヘツドの概要を示す構成図で
ある。図に示すサーマルヘツドは、基板１の端部
に発熱抵抗体２を形成するとともに、基板１の両
面にそれぞれ発熱抵抗体２と一部が重なるように
電極層３，４を積層形成したものである。このよ
うに形成されたサーマルヘツドにおいては、発熱
抵抗体２の発熱部分が記録紙等に確実に接触する
ので、熱効率の良いサーマルヘツドを得ることが
できる。また、基板１の端部は平面部に比べて平
坦に加工することが容易であるので、複数の発熱
抵抗体２を記録紙等に均等に接触させることがで
き、高い印字品質を得ることができる。
Conventionally, thermal heads such as those shown in Japanese Patent Publication No. 6040/1982 and Japanese Patent Publication No. 38265/1982 have been known as thermal heads in which a heating resistor is formed at the end of a substrate. FIG. 7 is a block diagram showing an outline of such a thermal head. The thermal head shown in the figure has a heating resistor 2 formed at the end of a substrate 1, and electrode layers 3 and 4 laminated on both sides of the substrate 1 so as to partially overlap with the heating resistor 2. be. In the thermal head formed in this manner, the heat generating portion of the heat generating resistor 2 is in reliable contact with the recording paper, etc., so that a thermal head with good thermal efficiency can be obtained. Furthermore, since the edges of the substrate 1 are easier to process to be flat than the flat parts, the plural heating resistors 2 can be brought into even contact with the recording paper, etc., and high printing quality can be obtained. can.
しかしながら、このようなサーマルヘツドにお
いては、電極層３，４を基板１の両面に形成して
いるために、次のような欠点を有している。
However, since the electrode layers 3 and 4 are formed on both sides of the substrate 1, such a thermal head has the following drawbacks.
(イ) 基板１に対して片面づつ電極層を形成しなけ
ればならないので、電極層３，４の位置合せな
どが容易ではない。(a) Since electrode layers must be formed on one side of the substrate 1, alignment of the electrode layers 3 and 4 is not easy.
(ロ) 基板１にセラミツク基板等のスルーホール処
理の難しい基板を使用した場合には、リード配
線などの配線処理は別の基板で行なわなければ
ならず、駆動用ICその他の素子を内蔵させる
ことが難かしい。(b) If a ceramic substrate or other board that is difficult to process through holes is used as the substrate 1, wiring such as lead wiring must be done on a separate board, and driving ICs and other elements must be built in. is difficult.
(ハ) 印字ドツトの大きさ（発熱抵抗体２の長さ）
は基板１の厚さによつて決まるので、記録の高
分解能化のためには基板１を薄くしなければな
らないが、その場合には、基板１の機械的強度
が得られなくなり、製作が難かしくなつてしま
う。(c) Size of printed dot (length of heating resistor 2)
is determined by the thickness of the substrate 1, so in order to increase the resolution of recording, the substrate 1 must be made thinner, but in that case, the mechanical strength of the substrate 1 cannot be obtained, making it difficult to manufacture. It makes me feel weird.
(ニ) 発熱抵抗体２が基板１の端部を包むように形
成されるために、基板１のエツジ部で発熱抵抗
体２が直角に折れ曲つており、このためこのエ
ツジ部で発熱抵抗体２が断線する可能性があ
る。(d) Since the heating resistor 2 is formed so as to wrap around the edge of the substrate 1, the heating resistor 2 is bent at right angles at the edge of the substrate 1. may be disconnected.
本発明は、上記のような従来装置の欠点をなく
し、製作が容易であるとともに、高分解能化に適
したサーマルヘツドおよびその製造方法を実現す
ることを目的としたものである。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of conventional devices, to realize a thermal head that is easy to manufacture, and is suitable for high resolution, and a method for manufacturing the same.
本発明のサーマルヘツドおよびその製造方法
は、それぞれ電極層が形成された２枚の基板を、
その電極層によりガラス層を挟むように対向さ
せ、このガラス層を介して接着するとともに、ガ
ラス層を含む２枚の基板をその端面に各電極層が
露出するように直線状に切断し、この端面に発熱
抵抗体を形成するようにしたものである。
The thermal head and its manufacturing method of the present invention include two substrates each having an electrode layer formed thereon.
The electrode layers face each other with the glass layer sandwiched between them, and are bonded together via the glass layer.The two substrates including the glass layer are cut in a straight line so that each electrode layer is exposed on the end surface. A heating resistor is formed on the end face.
このように、それぞれに電極層の形成された２
枚の基板を、ガラス層を挟むように対向させ、こ
のガラス層を介して接着するように構成すると、
各基板に対して、一連の製造工程により全ての電
極層を形成することができ、製作が容易であると
ともに、駆動用ICその他の素子を搭載する場合
に必要なクロスオーバ等のリード配線処理も同時
に、かつ同一基板内で行なうことができる。リー
ド配線パターンを２枚の基板で分担するようにな
るので、リードパターンの自由度が高く、ドライ
バ素子の搭載などに有利である。また、発熱抵抗
体の長さは電極層間に形成するガラス層の厚さに
より決定されるので、この厚さを調節することに
より発熱抵抗体の長さを任意に制御することがで
き、基板の強度などに影響を与えることなく、高
分解能のサーマルヘツドを実現することができ
る。さらに、基板の端部を切断し、電極層の露出
した端面に発熱抵抗体を形成するようにしている
ので、発熱抵抗体はその一つの面だけに形成され
れば良く、折れ曲りがないために、信頼性の高い
発熱抵抗体を得ることができる。
In this way, the two electrode layers each have an electrode layer formed thereon.
When two substrates are arranged to face each other with a glass layer sandwiched between them and are bonded together via this glass layer,
All electrode layers can be formed on each board through a series of manufacturing processes, making it easy to manufacture, as well as lead wiring processing such as crossovers required when mounting drive ICs and other elements. This can be done simultaneously and within the same substrate. Since the lead wiring pattern is shared between two substrates, there is a high degree of freedom in the lead pattern, which is advantageous for mounting driver elements. In addition, the length of the heating resistor is determined by the thickness of the glass layer formed between the electrode layers, so by adjusting this thickness, the length of the heating resistor can be arbitrarily controlled. A high-resolution thermal head can be realized without affecting strength or the like. Furthermore, since the edge of the substrate is cut and the heating resistor is formed on the exposed end surface of the electrode layer, the heating resistor only needs to be formed on one surface, and there is no bending. Therefore, a highly reliable heating resistor can be obtained.
以下、本発明のサーマルヘツドおよびその製造
方法の一実施例を図面を使用して説明する。図に
おいて、前記第７図と同様のものは同一符号を付
して示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a thermal head and a method for manufacturing the same according to the present invention will be described below with reference to the drawings. In the figure, the same parts as in FIG. 7 are designated by the same reference numerals.
第１図〜第５図に本発明のサーマルヘツドの製
造工程の一実施例を示す。第１図において、１1
はその表面に金（Au）．銀パラジウム．白金．銅
などの導電体により第１の電極層３（以下、選択
電極層３という）が形成された第１の基板、１2
は同様に第２の電極層４（以下、共通電極層４と
いう）が形成された第２の基板、５は高融点ガラ
ス等よりなり、選択電極層３と共通電極層４との
間に積層されて電気絶縁層および熱抵抗層となる
ガラス層である。図に示す如く、まず第１の基板
１1の選択電極層３の上にガラス層５を印刷した
後、このガラス層５の上にこれを共通電極層４側
で挟み込むように第２の基板１2を重ね合わせ、
ガラス層５を焼成して第１および第２の基板１1，
１2を一体に固着する。ここで、第１の基板１1上
に形成された選択電極層３は、エツチングにより
図示の如きパターンに形成されたものであるが、
エツチングにより微細パターンの加工を行なうの
は、10本／mm以上の電極密度を得る場合であり、
これが比較的低密度の場合には、印刷により直接
図のような電極パターンを形成することも可能で
ある。なお、選択電極層３および共通電極層４の
膜厚は、一般的に３〜5μm程度である。 An embodiment of the manufacturing process of the thermal head of the present invention is shown in FIGS. 1 to 5. In Figure 1, 1 1
has gold (Au) on its surface. Silver palladium. platinum. A first substrate 1 2 on which a first electrode layer 3 (hereinafter referred to as selective electrode layer 3) is formed of a conductor such as copper
Similarly, 5 is a second substrate on which a second electrode layer 4 (hereinafter referred to as common electrode layer 4) is formed, and 5 is made of high melting point glass or the like, and is laminated between selective electrode layer 3 and common electrode layer 4. This is a glass layer that is coated to become an electrically insulating layer and a thermally resistant layer. As shown in the figure, first, a glass layer 5 is printed on the selective electrode layer 3 of the first substrate 11 , and then a second substrate is printed on the glass layer 5 so as to sandwich it between the common electrode layer 4 side. Superimpose 1 and 2 ,
The glass layer 5 is fired to form the first and second substrates 1 1 ,
1. Fix 2 together. Here, the selective electrode layer 3 formed on the first substrate 11 is formed by etching into a pattern as shown in the figure.
Etching is used to process fine patterns when obtaining an electrode density of 10 lines/mm or more.
If the density is relatively low, it is also possible to directly form the electrode pattern as shown in the figure by printing. Note that the thickness of the selective electrode layer 3 and the common electrode layer 4 is generally about 3 to 5 μm.
第２図はガラス層５の焼成後の状態を示すもの
で、次の工程では第１および第２の基板１1，１2
をその端部で、図中の線ａに沿つて直線状に切断
し、発熱抵抗体２を被着すべき端面を形成する。 FIG. 2 shows the state of the glass layer 5 after firing, and in the next step, the first and second substrates 1 1 , 1 2
The end thereof is cut in a straight line along the line a in the figure to form an end surface to which the heating resistor 2 is to be attached.
この結果、切断された端面には、第３図に示す
如く、選択電極層３および共通電極層４が露出す
るようになり、しかも、これらの各電極層３，４
はガラス層５を介して対向している。ここで、第
２の基板１2が第１の基板１1に比べて短かく形成
されているのは、第１の基板１1（選択電極層３）
よりのリードの取出しを容易にするためである。 As a result, the selective electrode layer 3 and the common electrode layer 4 are exposed on the cut end surface as shown in FIG.
are opposed to each other with a glass layer 5 in between. Here, the reason why the second substrate 1 2 is formed shorter than the first substrate 1 1 is because the second substrate 1 2 is shorter than the first substrate 1 1 (selective electrode layer 3).
This is to make it easier to take out the lead from the strand.
本発明においては、この電極層３，４の露出し
た端面に発熱抵抗体２を形成するものであるが、
切断後の端面の表面粗度が所定の基準より低い場
合には、表面を研磨仕上げして、発熱抵抗体２の
付着を良くすることが望ましい。第４図は端面を
研磨するとともに、記録紙等との接触面積を小さ
くして、印字の全圧力を小さくするために、面取
り加工を施した場合を例示したものである。 In the present invention, the heating resistor 2 is formed on the exposed end surfaces of the electrode layers 3 and 4.
If the surface roughness of the end face after cutting is lower than a predetermined standard, it is desirable to polish the surface to improve adhesion of the heating resistor 2. FIG. 4 shows an example in which the end face is polished and chamfered in order to reduce the contact area with recording paper, etc., and to reduce the total printing pressure.
このように形成された端面には、窒化タンタル
（Ta2Ｎ）．ニクロム（Ni−Cr）などの抵抗材料
がスパツタまたは蒸着により被着され、発熱抵抗
体２を形成する。この場合の発熱抵抗体２の膜厚
は、その抵抗値との関連で決定されるものである
が、概略0.1μm程度である。 The end face formed in this way is coated with tantalum nitride (Ta 2 N). A resistive material such as nichrome (Ni-Cr) is deposited by sputtering or vapor deposition to form the heating resistor 2. The film thickness of the heating resistor 2 in this case is determined in relation to its resistance value, and is approximately 0.1 μm.
さて、上記の工程により、発熱抵抗体２は選択
電極３および共通電極層４の露出した端面に一様
に被着され、これらの電極と導通状態となつてい
るので、次に発熱抵抗体２を各選択電極３毎に分
離する必要がある。 By the above process, the heating resistor 2 is uniformly deposited on the exposed end surfaces of the selection electrode 3 and the common electrode layer 4 and is in electrical continuity with these electrodes. needs to be separated for each selection electrode 3.
第５図は発熱抵抗体２を選択電極３に対応した
形状に分離した状態を示すものである。図示の例
は、レーザカツトを利用して発熱抵抗体２を分離
したもので、６はレーザカツトの軌跡である。レ
ーザカツトの幅（軌跡６の線幅）はレーザビーム
のスポツト径で決まるもので、最小幅は30μm程
度まで可能であるので、高密度の発熱抵抗体形成
が容易である。 FIG. 5 shows a state in which the heating resistor 2 is separated into shapes corresponding to the selection electrodes 3. In the illustrated example, the heating resistor 2 is separated using a laser cut, and 6 is the locus of the laser cut. The width of the laser cut (the line width of the locus 6) is determined by the spot diameter of the laser beam, and the minimum width can be up to about 30 μm, making it easy to form a heating resistor with high density.
上記のようにして発熱抵抗体２が分離される
と、発熱抵抗体２の保護および耐摩耗層として酸
化ケイ素（SiO2）．五酸化タンタル（Ta2O5）．窒
化ホウ素（BN）．炭化ケイ素（SiC）などの絶縁
層がスパツタまたは蒸着により被着される。ま
た、熱伝導性を考慮すれば、酸化ケイ素などで絶
縁した後、分散メツキにより耐摩耗金属層を被着
してもよい。この場合、金属膜には主にニツケル
が使用され、分散剤として酸化アルミニウム．窒
化ホウ素．ダイヤモンドなどを添加することによ
り、熱伝導性ならびに耐摩耗性を向上させること
ができる。第６図はこの耐摩耗層７の被着状態を
示す断面図である。 When the heating resistor 2 is separated as described above, silicon oxide (SiO 2 ) is formed as a protective and wear-resistant layer of the heating resistor 2. Tantalum pentoxide (Ta 2 O 5 ). Boron nitride (BN). An insulating layer such as silicon carbide (SiC) is applied by sputtering or vapor deposition. Furthermore, in consideration of thermal conductivity, a wear-resistant metal layer may be applied by dispersion plating after insulating with silicon oxide or the like. In this case, nickel is mainly used for the metal film, and aluminum oxide is used as a dispersant. Boron nitride. By adding diamond or the like, thermal conductivity and wear resistance can be improved. FIG. 6 is a sectional view showing the state in which the wear-resistant layer 7 is adhered.
また、第５図および第６図に示されるように、
発熱抵抗体２の長さは選択電極３と共通電極層４
との間に介在するガラス層５の厚さにより決まつ
ており、ガラス層５の膜厚を調節することによ
り、発熱抵抗体２の長さを任意に制御することが
できる。例えば、ガラス層５の膜厚を制御する手
段として、粒度．形状の一定した球状のアルミナ
粉末や径の一定した円柱状のフアイバグラスなど
をガラス層５に混入させて、第１および第２の基
板１1，１2間のスペーサとして作用させることに
より、一定の間隔を保つたままでガラス層５を焼
成することができる。 Moreover, as shown in FIGS. 5 and 6,
The length of the heating resistor 2 is the length of the selection electrode 3 and the common electrode layer 4.
The length of the heating resistor 2 can be arbitrarily controlled by adjusting the thickness of the glass layer 5. For example, as a means of controlling the film thickness of the glass layer 5, particle size. By mixing spherical alumina powder with a constant shape, cylindrical fiberglass with a constant diameter, etc. into the glass layer 5 and acting as a spacer between the first and second substrates 1 1 and 1 2 , The glass layer 5 can be fired while maintaining the interval of .
上記のような工程により本発明のサーマルヘツ
ドが形成されるが、このようなサーマルヘツドに
おいては、それぞれ電極層３，４が形成された基
板１1，１2をガラス層５を介して対向させ、一体
に固着するようにしているので、製作および配線
処理が容易であるとともに、選択電極層３と共通
電極層４との間に介在するガラス層５の膜厚を調
節することにより、発熱抵抗体２の長さを任意に
制御することができ、基板１1，１2の厚さ等に左
右されずに、高い分解能を得ることができる。ま
た、電極層３，４の露出した端面に発熱抵抗体２
を形成するので、発熱抵抗体２はその端面のみに
被着されればよく、折れ曲りがないために、信頼
性の高い発熱抵抗体２を形成することできる。さ
らに、基板１1，１2の端面に発熱抵抗体２をスパ
ツタまたは蒸着する工程は、基板１1，１2を立
て、端面をスパツタターゲツトに対向させた状態
で行なわれるので、基板１1，１2をスパツタ装置
内などに数多く装顛することができ、量産化が可
能となる。 The thermal head of the present invention is formed through the steps described above, but in such a thermal head, the substrates 1 1 and 1 2 on which the electrode layers 3 and 4 are formed, respectively, are opposed to each other with the glass layer 5 interposed therebetween. Since they are fixed together, manufacturing and wiring processing are easy, and by adjusting the thickness of the glass layer 5 interposed between the selective electrode layer 3 and the common electrode layer 4, the heating resistor can be fixed. The length of the body 2 can be arbitrarily controlled, and high resolution can be obtained regardless of the thickness of the substrates 1 1 and 1 2 . Furthermore, a heating resistor 2 is provided on the exposed end surface of the electrode layers 3 and 4.
Since the heat generating resistor 2 only needs to be attached to the end face thereof, and there is no bending, the heat generating resistor 2 can be formed with high reliability. Further, since the step of sputtering or vapor depositing the heating resistor 2 on the end surfaces of the substrates 1 1 and 1 2 is performed with the substrates 1 1 and 1 2 upright with their end surfaces facing the sputter target, the substrate 1 1 , 1 2 can be installed in large numbers in sputtering equipment, etc., making mass production possible.
なお、上記の説明においては、それぞれ基板１
１，１2の表面に直接第１の電極層３および第２の
電極層４を形成する場合を例示したが、基板１1，
１2の表面の平滑度によつては、基板１1，１2と
電極層３，４の間にそれぞれガラス層を設け、電
極層３，４の下地を平滑化するようにしてもよ
い。また、発熱抵抗体２の分離手段として、レー
ザカツトを例示したが、発熱抵抗体２を分離する
手段には、この他にもフオトリソグラフによるエ
ツチングやブレードによる機械的な切断、サンド
ブラスト法などがあり、必要に応じて使い分ける
ことができるものである。さらに、発熱抵抗体２
の上に形成する耐摩耗層７は、金属膜に限られる
ものではなく、ガラス層を使用することもでき
る。また、前記第６図において、電極層３，４の
間に介在させるガラス層５の長さｌを変えると、
この部分の熱伝導率が変化するので、ヘツドの熱
応答特性を任意に変化させることができる。 In addition, in the above description, each substrate 1
Although the case where the first electrode layer 3 and the second electrode layer 4 are directly formed on the surfaces of the substrates 1 1 and 1 2 has been illustrated,
Depending on the smoothness of the surfaces of the substrates 1 1 and 1 2 , glass layers may be provided between the substrates 1 1 and 1 2 and the electrode layers 3 and 4 to smooth the bases of the electrode layers 3 and 4, respectively. Further, although laser cutting is illustrated as an example of a means for separating the heating resistor 2, there are other means for separating the heating resistor 2, such as etching by photolithography, mechanical cutting with a blade, and sandblasting. It can be used depending on the need. Furthermore, heating resistor 2
The wear-resistant layer 7 formed thereon is not limited to a metal film, and a glass layer can also be used. Furthermore, in FIG. 6, if the length l of the glass layer 5 interposed between the electrode layers 3 and 4 is changed,
Since the thermal conductivity of this portion changes, the thermal response characteristics of the head can be changed as desired.
以上説明したように、本発明のサーマルヘツド
およびその製造方法では、それぞれに電極層の形
成された２枚の基板を、電気絶縁層および熱抵抗
層となるガラス層を挟むように対向させ、このガ
ラス層を介して一体に固着するとともに、基板を
含む各層を直線状に切断し、各電極層の露出した
端面に発熱抵抗体を形成するようにしているの
で、クロスオーバ等のリード配線処理が可能であ
り、ドライバを含めたヘツドとして、小形化や共
通化による部品数の減少、接続点数の減少、さら
に、低価格と信頼性の向上が実現できる。また、
発熱抵抗体の長さの制御が容易であり、製作が容
易であるとともに、高分解能化に適したサーマル
ヘツドおよびその製造方法を実現することができ
る。
As explained above, in the thermal head and the manufacturing method thereof of the present invention, two substrates each having an electrode layer formed thereon are placed facing each other with a glass layer serving as an electrical insulating layer and a thermal resistance layer sandwiched therebetween. In addition to being fixed together through a glass layer, each layer including the substrate is cut in a straight line, and a heating resistor is formed on the exposed end face of each electrode layer, making it easy to handle lead wiring such as crossovers. As a head including a driver, it is possible to reduce the number of parts through miniaturization and commonization, reduce the number of connection points, and achieve lower costs and improved reliability. Also,
The length of the heating resistor can be easily controlled, and a thermal head that is easy to manufacture and suitable for high resolution and a method for manufacturing the same can be realized.
第１図〜第６図は本発明のサーマルヘツドおよ
びその製造方法の実施例を示す構成図、第７図は
従来のサーマルヘツドの一例を示す構成図であ
る。
１，１1，１2……基板、２……発熱抵抗体、
３，……選択電極層、４……共通電極層、５……
ガラス層、６……レーザカツト、７……耐摩耗
層。
1 to 6 are block diagrams showing embodiments of a thermal head and a method for manufacturing the same according to the present invention, and FIG. 7 is a block diagram showing an example of a conventional thermal head. 1, 1 1 , 1 2 ... substrate, 2 ... heating resistor,
3, ... selection electrode layer, 4 ... common electrode layer, 5 ...
Glass layer, 6...Laser cut, 7...Abrasion resistant layer.
Claims (1)
と、それぞれ一方の面に電極層が形成されるとと
もにこれらの電極層により前記ガラス層を挟むよ
うに対向配置された第１および第２の基板と、前
記ガラス層を含む前記第１および第２の基板の端
部の切断または研磨により第１および第２の基板
における電極層が露出した端面に形成された発熱
抵抗体とを具備してなるサーマルヘツド。 ２ それぞれ一方の面に電極層が形成された２枚
の基板をガラス層を介して対向させ一体に固着す
る工程と、基板を含む各層をその端部において直
線状に切断する工程と、この切断工程により複数
の電極層が露出した端面に発熱抵抗体を形成する
工程とを含むサーマルヘツドの製造方法。[Scope of Claims] 1. A first glass layer serving as an electrical insulating layer and a heat resistance layer, each having an electrode layer formed on one surface thereof and facing each other so that the glass layer is sandwiched between these electrode layers. and a second substrate, and a heating resistor formed on the end surfaces of the first and second substrates where the electrode layers are exposed by cutting or polishing the ends of the first and second substrates including the glass layer. A thermal head equipped with 2. A step in which two substrates each having an electrode layer formed on one surface are faced to each other through a glass layer and fixed together, a step in which each layer including the substrate is cut into a straight line at its end, and this cutting A method for manufacturing a thermal head, comprising the step of forming a heat generating resistor on an end surface where a plurality of electrode layers are exposed in the step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23393584A JPS61110569A (en) | 1984-11-06 | 1984-11-06 | Thermal head and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23393584A JPS61110569A (en) | 1984-11-06 | 1984-11-06 | Thermal head and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61110569A JPS61110569A (en) | 1986-05-28 |
| JPH0582304B2 true JPH0582304B2 (en) | 1993-11-18 |
Family
ID=16962914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23393584A Granted JPS61110569A (en) | 1984-11-06 | 1984-11-06 | Thermal head and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61110569A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS635963A (en) * | 1986-06-26 | 1988-01-11 | Rohm Co Ltd | Thermal head |
| JPH01267059A (en) * | 1988-04-20 | 1989-10-24 | Mitani Denshi Kogyo Kk | Thermal head device |
| JPH01163140U (en) * | 1988-05-06 | 1989-11-14 |
-
1984
- 1984-11-06 JP JP23393584A patent/JPS61110569A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61110569A (en) | 1986-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910007903B1 (en) | Therma print head | |
| US4241103A (en) | Method of manufacturing an integrated thermal printing head | |
| JPH0582304B2 (en) | ||
| EP0372896B1 (en) | Recording head including electrode supporting substrate having thin-walled contact end portion | |
| JPH0582303B2 (en) | ||
| JPH0584221B2 (en) | ||
| JPH0584222B2 (en) | ||
| US5081471A (en) | True edge thermal printhead | |
| JPH0380434B2 (en) | ||
| JP2568492B2 (en) | Thermal head | |
| JP2780849B2 (en) | Energized recording head | |
| JPS62184864A (en) | Thermal head and manufacture thereof | |
| JPS62104774A (en) | Thermal head and preparation thereof | |
| WO2021205904A1 (en) | Thermal print head, thermal printer, and method for manufacturing thermal print head | |
| JP2575554B2 (en) | Edge type thermal head | |
| JPH0584228B2 (en) | ||
| JP4309700B2 (en) | Thermal head substrate, thermal head and manufacturing method thereof | |
| JPH0584225B2 (en) | ||
| JP2945192B2 (en) | Edge type thermal head | |
| JP2686318B2 (en) | Method of manufacturing energization type recording head | |
| JP3476961B2 (en) | Thermal head | |
| JP2551773B2 (en) | Thermal head | |
| JPH07205465A (en) | Thermal head and manufacture thereof | |
| JPH09109428A (en) | Thermal head and production thereof | |
| JP2002307733A (en) | Thermal head and its manufacturing method |