JPH0580797B2 - - Google Patents
Info
- Publication number
- JPH0580797B2 JPH0580797B2 JP60018258A JP1825885A JPH0580797B2 JP H0580797 B2 JPH0580797 B2 JP H0580797B2 JP 60018258 A JP60018258 A JP 60018258A JP 1825885 A JP1825885 A JP 1825885A JP H0580797 B2 JPH0580797 B2 JP H0580797B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film layer
- phosphor
- phosphor thin
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 67
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052771 Terbium Inorganic materials 0.000 description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 241001175904 Labeo bata Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 rare earth metal ions Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60018258A JPS61179093A (ja) | 1985-02-01 | 1985-02-01 | 薄膜ｅｌ素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60018258A JPS61179093A (ja) | 1985-02-01 | 1985-02-01 | 薄膜ｅｌ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61179093A JPS61179093A (ja) | 1986-08-11 |
| JPH0580797B2 true JPH0580797B2 (enrdf_load_stackoverflow) | 1993-11-10 |
Family
ID=11966653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60018258A Granted JPS61179093A (ja) | 1985-02-01 | 1985-02-01 | 薄膜ｅｌ素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179093A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6366896A (ja) * | 1986-09-09 | 1988-03-25 | 日本電信電話株式会社 | 表示装置及びその製造方法 |
-
1985
- 1985-02-01 JP JP60018258A patent/JPS61179093A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61179093A (ja) | 1986-08-11 |
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