JPH057858B2 - - Google Patents

Info

Publication number
JPH057858B2
JPH057858B2 JP60026181A JP2618185A JPH057858B2 JP H057858 B2 JPH057858 B2 JP H057858B2 JP 60026181 A JP60026181 A JP 60026181A JP 2618185 A JP2618185 A JP 2618185A JP H057858 B2 JPH057858 B2 JP H057858B2
Authority
JP
Japan
Prior art keywords
single crystal
waveform
crystal layer
semiconductor
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60026181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61187222A (ja
Inventor
Tomoyasu Inoe
Toshihiko Hamazaki
Iwao Higashinakagaha
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60026181A priority Critical patent/JPS61187222A/ja
Priority to US06/762,374 priority patent/US4662949A/en
Publication of JPS61187222A publication Critical patent/JPS61187222A/ja
Priority to US06/904,942 priority patent/US4746803A/en
Publication of JPH057858B2 publication Critical patent/JPH057858B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2926—
    • H10P14/3818—
    • H10P14/271—
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3466—
    • H10P14/382—
    • H10P95/90—

Landscapes

  • Recrystallisation Techniques (AREA)
JP60026181A 1985-02-15 1985-02-15 半導体単結晶層の製造方法 Granted JPS61187222A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60026181A JPS61187222A (ja) 1985-02-15 1985-02-15 半導体単結晶層の製造方法
US06/762,374 US4662949A (en) 1985-02-15 1985-08-05 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
US06/904,942 US4746803A (en) 1985-02-15 1986-09-08 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60026181A JPS61187222A (ja) 1985-02-15 1985-02-15 半導体単結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS61187222A JPS61187222A (ja) 1986-08-20
JPH057858B2 true JPH057858B2 (cg-RX-API-DMAC10.html) 1993-01-29

Family

ID=12186347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60026181A Granted JPS61187222A (ja) 1985-02-15 1985-02-15 半導体単結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS61187222A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0726755A (ja) * 1993-07-07 1995-01-27 Inax Corp 壁パネルと天井パネルの接合方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2653033B2 (ja) * 1987-12-19 1997-09-10 工業技術院長 半導体単結晶層の製造方法
JP3948486B1 (ja) 2006-07-10 2007-07-25 石川島播磨重工業株式会社 揮発性有機化合物の処理方法、吸着・脱着装置及び揮発性有機化合物の処理システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0726755A (ja) * 1993-07-07 1995-01-27 Inax Corp 壁パネルと天井パネルの接合方法

Also Published As

Publication number Publication date
JPS61187222A (ja) 1986-08-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term