JPH0578165A - Composition for ceramic substrate - Google Patents

Composition for ceramic substrate

Info

Publication number
JPH0578165A
JPH0578165A JP3239217A JP23921791A JPH0578165A JP H0578165 A JPH0578165 A JP H0578165A JP 3239217 A JP3239217 A JP 3239217A JP 23921791 A JP23921791 A JP 23921791A JP H0578165 A JPH0578165 A JP H0578165A
Authority
JP
Japan
Prior art keywords
weight
composition
ceramic substrate
glass frit
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3239217A
Other languages
Japanese (ja)
Other versions
JP2964725B2 (en
Inventor
Hiroharu Nishimura
弘治 西村
Kusuo Kuguhara
九州男 久々原
Tatsuya Wada
達也 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/20Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

PURPOSE:To provide the title composition to be used for producing various multilayer wiring boards, calcinable at extremely low temperatures, capable of using pastes such as of Au or Ag as internal electrodes, adequate in resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength and flexural strength etc., also adjustable in the rate of change in electrostatic capacity with temperature change to + or -0 to + or -100ppm/ deg.C. CONSTITUTION:The objective composition comprising (A) 60-95wt.% of glass frit composed of (1) 50-60wt.% of Al2O3, (2) 25-30wt.% of SiO2, (3) 7.8-8.3wt.% of PbO, (4) 3.3-3.8wt.% of CaO, (5) 2.5-3.0wt.% of B2O3, (6) 1.1-1.5wt.% of MgO, (7) 1.1-1.5wt.% of Na2O, and (8) 0.8-1.1wt.% of K2O and (B) 5-40 wt.% of a titanate (SrTiO3 or CaTiO3).

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、導体、抵抗体等の電子
回路を多層に形成する多層配線基板に良好なセラミック
基板用組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for a ceramic substrate, which is suitable for a multilayer wiring substrate for forming electronic circuits such as conductors and resistors in multiple layers.

【0002】[0002]

【従来の技術】近年、多層に回路を形成する電子部品と
しては、焼成したアルミナ基板上に回路、絶縁層を交互
に印刷し、これを焼成することによって製造する第1の
方法と、 未焼成のセラミック基板に回路を印刷し、互
いに回路が接触しないようにこれを積層し、プレスした
後、焼成して製造する第2の方法がある。
2. Description of the Related Art In recent years, as electronic parts for forming a circuit in multiple layers, a first method of manufacturing a circuit by alternately printing a circuit and an insulating layer on a fired alumina substrate and baking the printed circuit board and a non-fired method. There is a second method in which the circuit is printed on the ceramic substrate, the circuits are laminated so that the circuits do not come into contact with each other, the circuit is pressed, and then the circuit is fired.

【0003】第1の方法のものは、回路の影響によって
その上に形成する絶縁層に凹凸が生じ、それは上層ほど
大きくなる。この凹凸が大きくなると、この上に次の回
路を印刷することは難しくなり、通常10層前後が限度
とされている。
In the case of the first method, the insulating layer formed thereon is uneven due to the influence of the circuit, and the unevenness becomes larger in the upper layer. If this unevenness becomes large, it becomes difficult to print the next circuit on it, and the limit is usually around 10 layers.

【0004】これに対し、第2の方法のものは、回路の
印刷は常に平面に近い状態の基板に対して行うために、
積層数の多いものを製造することができ、高密度の集積
回路形成が行える。この第2の方法の基板に使用するセ
ラミック基板組成物としては、Al23粉末と15重量
%以下のガラス粉末を無機バインダーで固定したもの
や、Al2 O3−SiO2系にPbやBを混入させ低温で
焼成したものがある。
On the other hand, in the second method, since the circuit is always printed on the substrate in a nearly flat state,
It is possible to manufacture one having a large number of laminated layers and to form a high-density integrated circuit. As the ceramic substrate composition used for the substrate of the second method, Al 2 O 3 powder and 15% by weight or less of glass powder fixed with an inorganic binder, or Al 2 O 3 —SiO 2 system containing Pb or B is used. Some of them are mixed with and baked at a low temperature.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記従
来の第2の方法のAl23粉末と15重量%以下のガラ
ス粉末を無機バインダーで固定したものは、焼成温度が
1450〜1600℃と極めて高いので、回路を構成す
る材料もこの焼成温度で劣化しないMo、W等の高価な
ものを使用し、又、還元雰囲気で焼成する必要があるの
で作業性が劣った。
However, the Al 2 O 3 powder of the second conventional method and the glass powder of 15% by weight or less fixed by an inorganic binder have an extremely high firing temperature of 1450 to 1600 ° C. Since the cost is high, expensive materials such as Mo and W, which do not deteriorate at this firing temperature, are used as the material for forming the circuit, and the workability is poor because firing is required in a reducing atmosphere.

【0006】Al23−SiO2系にPbやBを10w
t%以上混入させ低温で焼成したものは、温度変化に対
する静電容量の変化率(以下、TCCと記す)が大きい
という問題点があった。
Al 2 O 3 --SiO 2 system containing 10 w of Pb and B
The material mixed with t% or more and fired at a low temperature had a problem that the rate of change in capacitance with temperature change (hereinafter referred to as TCC) was large.

【0007】本発明の課題は、上記従来の問題点を解決
し、極めて低い温度、すなわち750〜950℃で焼成
でき、Au、Ag、Ag−Pd、Cu等のペーストを内
部電極として使用することが可能な、しかも体積固有抵
抗率、誘電率、誘電正接、絶縁破壊強度、曲げ強度等、
導体、抵抗体等の電子回路を多層に形成する多層配線基
板としての諸特性を充足し、さらに、TCCが±0pp
m/℃〜100ppm/℃と調整可能なセラミック基板
用組成物を提供することにある。
The object of the present invention is to solve the above-mentioned conventional problems and to use a paste of Au, Ag, Ag-Pd, Cu or the like as an internal electrode, which can be fired at an extremely low temperature, that is, 750 to 950 ° C. Volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc.
Satisfies various characteristics as a multilayer wiring board for forming electronic circuits such as conductors and resistors in multiple layers, and has a TCC of ± 0 pp
It is intended to provide a composition for a ceramic substrate that can be adjusted to m / ° C to 100 ppm / ° C.

【0008】[0008]

【課題を解決するための手段】この課題を解決した本発
明のセラミック基板用組成物は、重量%表示で、ガラス
フリット 60〜95%、チタン酸塩 5〜40%、と
からなる。前記チタン酸塩としては、SrTiO3、C
aTiO3、がある。又、前記ガラスフリットとして
は、重量%で、Al23 50〜60%、SiO2
25〜30%、PbO 7.8〜8.3%、CaO
3.3〜3.8%、B2 O3 2.5〜3.0%、Mg
O 1.1〜1.5%、Na2O 1.1〜1.5%、
2O 0.8〜1.1%が望ましい。
The composition for a ceramic substrate of the present invention, which has solved this problem, comprises glass frit of 60 to 95% and titanate of 5 to 40% by weight. Examples of the titanate include SrTiO 3 , C
There is a TiO 3 . Further, the glass frit includes Al 2 O 3 50 to 60% by weight and SiO 2 by weight%.
25-30%, PbO 7.8-8.3%, CaO
3.3-3.8%, B2 O3 2.5-3.0%, Mg
O 1.1-1.5%, Na 2 O 1.1-1.5%,
K 2 O 0.8 to 1.1% is desirable.

【0009】ガラスフリットが60重量%より少ない
と、焼成温度が高くなり、本発明の課題である低温度で
の焼成を行うことが困難である。一方、ガラスフリット
が、95重量%より多いと、焼成体の曲げ強度、及び耐
湿性が低下し好ましくない。又、TCCの調整も困難と
なる。
When the glass frit is less than 60% by weight, the firing temperature becomes high, and it is difficult to perform the firing at the low temperature which is the subject of the present invention. On the other hand, when the glass frit is more than 95% by weight, the bending strength and the moisture resistance of the fired product are deteriorated, which is not preferable. Also, it becomes difficult to adjust the TCC.

【0010】SiO2 は25重量%より少ないと、軟化
温度が低くなり焼成時に大きな変形を生じ、30重量%
より多いと、焼成温度が高くなり過ぎ、いずれも好まし
くない。
When the content of SiO2 is less than 25% by weight, the softening temperature becomes low and a large amount of deformation occurs during firing.
If it is more, the firing temperature becomes too high, which is not preferable.

【0011】PbOは、ガラスの溶解性を向上させるた
めに、7.8重量%以上の添加が望ましい。8.3重量
%より多いと、ガラスの軟化温度が低くなり過ぎ、焼成
時に大きな変形を生じやすく、好ましくない。
PbO is preferably added in an amount of 7.8% by weight or more in order to improve the solubility of glass. If it is more than 8.3% by weight, the softening temperature of the glass tends to be too low, and large deformation tends to occur during firing, which is not preferable.

【0012】CaOは、ガラスフリット製造時の、溶融
性の向上、及びガラスの熱膨張係数を調整する目的で添
加する。3.3重量%より少ないと、上記溶融性が向上
せず、フリット製造時に失透を生じやすい。3.8重量
%より多いと、熱膨張係数が大きくなり過ぎ、いずれも
好ましくない。
CaO is added for the purpose of improving the meltability and adjusting the coefficient of thermal expansion of glass during the production of glass frit. If it is less than 3.3% by weight, the above-mentioned meltability is not improved and devitrification is likely to occur during the production of frit. When it is more than 3.8% by weight, the coefficient of thermal expansion becomes too large, which is not preferable.

【0013】B23はフラックスであり、2.5重量%
より少ないと、焼成温度が高くなり過ぎ3.0重量%よ
り多いと、ガラスの化学的安定性が低下し、いずれも好
ましくない。
B 2 O 3 is a flux and contains 2.5% by weight.
If it is less than the above range, the firing temperature becomes too high, and if it exceeds 3.0% by weight, the chemical stability of the glass is deteriorated, which is not preferable.

【0014】MgOは、ガラスフリット製造時の、溶融
性の向上、及びガラスの熱膨張係数を調整する目的で添
加する。1.1重量%より少ないと、上記溶融性が向上
せず、フリット製造時に失透を生じやすい。1.5重量
%より多いと、熱膨張係数が大きくなり過ぎ、いずれも
好ましくない。
MgO is added for the purpose of improving the meltability and adjusting the coefficient of thermal expansion of glass during the production of glass frit. If it is less than 1.1% by weight, the above-mentioned meltability is not improved and devitrification is likely to occur during the production of frit. If it exceeds 1.5% by weight, the coefficient of thermal expansion becomes too large, which is not preferable.

【0015】Na2 Oは、ガラスの溶解性を向上させる
ために、1.1重量%以上の添加が望ましい。1.5重
量%より多いと、ガラスの軟化温度が低くなり過ぎ、焼
成時に大きな変形を生じやすく、好ましくない。
Na2O is preferably added in an amount of 1.1% by weight or more in order to improve the solubility of glass. If it is more than 1.5% by weight, the softening temperature of the glass tends to be too low, and large deformation tends to occur during firing, which is not preferable.

【0016】K2 Oは、ガラスの溶解性を向上させるた
めに、0.8重量%以上の添加が望ましい。1.1重量
%より多いと、ガラスの軟化温度が低くなり過ぎ焼成時
に大きな変形を生じやすく、好ましくない。
K2O is preferably added in an amount of 0.8% by weight or more in order to improve the melting property of glass. If it exceeds 1.1% by weight, the softening temperature of the glass tends to be too low, and large deformation tends to occur during firing, which is not preferable.

【0017】Al23は、セラミックの機械的強度を向
上させるために、50重量%以上の添加が望ましい。6
0重量%以上の添加では、焼成温度が高くなり過ぎ、好
ましくない。
Al 2 O 3 is preferably added in an amount of 50% by weight or more in order to improve the mechanical strength of the ceramic. 6
The addition of 0% by weight or more is not preferable because the firing temperature becomes too high.

【0018】[0018]

【作用】この構成によって、従来に比べ極めて低い温
度、すなわち750℃〜950℃で焼成でき、厚膜技術
で広く使用されているAu、Ag、Ag−Pd、Cu等
のペーストを内部電極として適用を可能とし、又、その
焼成体は、曲げ強度が大きく、熱伝導率に優れ、誘電率
が比較的小さく、絶縁抵抗が大きく、耐熱性に優れてお
り、特に、正のTCC特性を持つガラスフリットと負の
TCC特性を持つチタン酸塩系の焼成反応により、TC
Cの調整を容易にすることができる。
With this structure, a paste such as Au, Ag, Ag-Pd, Cu, etc., which is widely used in thick film technology, can be applied as an internal electrode because it can be fired at a temperature extremely lower than before, that is, 750 ° C to 950 ° C. In addition, the fired body has a large bending strength, an excellent thermal conductivity, a relatively small dielectric constant, a large insulation resistance, and an excellent heat resistance, and in particular, a glass having a positive TCC characteristic. By the firing reaction of frit and titanate system with negative TCC characteristics, TC
The adjustment of C can be facilitated.

【0019】[0019]

【実施例】以下に本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.

【0020】まずガラスフリットは、重量%でSiO2
27%、PbO 8.1%、CaO 3.5%、B2
3 2.7%、MgO 1.3%、Na2 O 1.3
%、K2 O 1.1%の組成になるように、通常の方法
により各原料を調合し、1400〜1500℃の温度に
て撹拌しながら溶融し、溶融後、水砕又は、フレーク状
とし、これにAl23 55重量%を添加し、ガラス
フリットを作製した。
First, the glass frit is made of SiO 2 by weight%.
27%, PbO 8.1%, CaO 3.5%, B 2
O 3 2.7%, MgO 1.3%, Na 2 O 1.3
%, K 2 O 1.1%, each raw material is prepared by a usual method, melted with stirring at a temperature of 1400 to 1500 ° C., and after melting, granulated or formed into flakes. Then, 55% by weight of Al 2 O 3 was added thereto to prepare a glass frit.

【0021】次に、このガラスフリットとチタン酸塩の
SrTiO3 が、それぞれ90重量%、10重量%にな
るように秤量し、ボールミルにて粉砕、混合し本発明の
組成物を得た。この粉砕混合した組成物に、バインダー
を10重量%添加し造粒、成形後、900℃にて15分
焼成した。この焼成体の相対密度を測定したところ、9
9.98%であったので、直径30mm、厚み0.35
mmに加工後、Ag電極を焼き付け、TCCを測定した
ところ、−25℃〜+85℃にて±0ppm/℃であっ
た。
Next, the glass frit and SrTiO 3 of titanate were weighed so as to be 90% by weight and 10% by weight, respectively, pulverized and mixed in a ball mill to obtain a composition of the present invention. 10% by weight of a binder was added to the pulverized and mixed composition, which was granulated and molded, and then fired at 900 ° C. for 15 minutes. When the relative density of this fired body was measured, it was 9
Since it was 9.98%, the diameter is 30 mm and the thickness is 0.35.
After processing into mm, the Ag electrode was baked and the TCC was measured, and it was ± 0 ppm / ° C at -25 ° C to + 85 ° C.

【0022】そこで、この粉砕混合した組成物に種々の
バインダーや可塑剤、溶剤を添加、混練して粘度10p
s〜30psのペーストを作製した。このペーストを常
法のドクターブレード法により、厚み0.1mmのグリ
ーンシートとした。このグリーンシートを50枚重ね、
その後、35℃にて約50トンの圧力にて熱圧着させ、
900℃にて15分焼成した。焼成したシートの各種特
性を測定したところ、体積固有抵抗率101416
Ω、誘電率8〜11、誘電正接≦5×10-4 、絶縁破
壊強度700〜900KV/cm、曲げ強度2000〜
2500kg/cm 2 、TCC(−25℃〜+85℃)
±0ppm/℃であった。即ち、導体、抵抗体等の電子
回路を多層に形成する多層配線基板としての良好なセラ
ミック基板の特性を満足する結果を得た。
Therefore, various compositions were added to the pulverized and mixed composition.
Add binder, plasticizer, solvent and knead to obtain viscosity of 10p
A paste of s to 30 ps was prepared. Always use this paste
With a doctor blade method of 0.1 mm thick
I made it a sheet. Stack 50 sheets of this green sheet,
After that, thermocompression-bonded at a pressure of about 50 tons at 35 ° C,
It was baked at 900 ° C. for 15 minutes. Various characteristics of baked sheets
The specific resistance was measured to be 1014 ~16 
Ω, dielectric constant 8 to 11, dielectric loss tangent ≦ 5 × 10-Four , Insulation breakdown
Breaking strength 700-900KV / cm, bending strength 2000-
2500 kg / cm 2 , TCC (-25 ℃ ~ +85 ℃)
It was ± 0 ppm / ° C. That is, electrons such as conductors and resistors
Good ceramic as a multilayer wiring board for forming circuits in multiple layers
The result satisfying the characteristics of the Mick substrate was obtained.

【0023】さらに、上記ガラスフリットとSrTiO
3 が、それぞれ94重量%、6重量%になるように秤量
し、ボールミルにて粉砕、混合し、上記方法にてグリー
ンシートの焼成体を得た。この場合の焼成温度は、80
0℃であった。焼成したシートの各種特性を測定したと
ころ、体積固有抵抗率、誘電率、誘電正接、絶縁破壊強
度、曲げ強度等は、上記と同等の値を得た。TCCは、
+50ppm/℃であった。
Furthermore, the glass frit and SrTiO 3
3 were weighed so as to be 94% by weight and 6% by weight, respectively, pulverized and mixed by a ball mill, and a green sheet fired body was obtained by the above method. The firing temperature in this case is 80
It was 0 ° C. When various properties of the fired sheet were measured, the volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc. were similar to the above. TCC is
It was +50 ppm / ° C.

【0024】ガラスフリットとCaTiO3 が、それぞ
れ70重量%、30重量%の場合は、焼成温度 870
℃にて、体積固有抵抗率、誘電率、誘電正接、絶縁破壊
強度、曲げ強度等は、上記と同等の値を得た。TCC
は、−20ppm/℃であった。
When the glass frit and CaTiO 3 are 70% by weight and 30% by weight, respectively, the firing temperature is 870.
At 0 ° C., the volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc., were the same values as above. TCC
Was -20 ppm / ° C.

【0025】ガラスフリットとCaTiO3 が、それぞ
れ60重量%、40重量%の場合は、焼成温度 920
℃にて、体積固有抵抗率、誘電率、誘電正接、絶縁破壊
強度、曲げ強度等は、上記と同等の値を得た。TCC
は、−30ppm/℃であった。
When the glass frit and CaTiO 3 are 60% by weight and 40% by weight, respectively, the firing temperature is 920.
At 0 ° C., the volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc., were the same values as above. TCC
Was -30 ppm / ° C.

【0026】さらに、Au、Ag、Ag−Pd、Cu等
の、ペーストを内部電極とし積層した、焼成体について
も同様の結果を得た。以上の結果を表1に示す。
Further, similar results were obtained with respect to the fired body in which a paste of Au, Ag, Ag-Pd, Cu or the like was laminated as an internal electrode. The above results are shown in Table 1.

【0027】[0027]

【表1】 [Table 1]

【0028】本発明は表1から分かるように、従来の組
成物と比較して極めて低い温度で焼成が実現できるよう
になり、TCCの調整が容易である。
As can be seen from Table 1, according to the present invention, the firing can be realized at an extremely low temperature as compared with the conventional composition, and the TCC can be easily adjusted.

【0029】[0029]

【発明の効果】以上の様に、本発明によれば、極めて低
い温度、すなわち750〜950℃で焼成が実現できる
ようになり、Au、Ag、Ag−Pd、Cu等のペース
トを内部電極として使用することが可能となった。更
に、焼成体の各種要求特性、すなわち、体積固有抵抗
率、誘電率、誘電正接、絶縁破壊強度、曲げ強度等、ま
た導体、抵抗体等の電子回路を多層に形成する多層配線
基板としての特性を満足し、更に、TCCも±0ppm
/℃〜±100ppm/℃と調整が容易なセラミック基
板用組成物を実現できるものである。
As described above, according to the present invention, it becomes possible to realize firing at an extremely low temperature, that is, 750 to 950 ° C., and a paste of Au, Ag, Ag—Pd, Cu or the like is used as an internal electrode. It is now possible to use. Further, various required characteristics of the fired body, that is, characteristics such as volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc., and characteristics as a multilayer wiring board for forming electronic circuits such as conductors and resistors in multiple layers. And TCC is ± 0ppm
It is possible to realize a composition for a ceramic substrate, which can be easily adjusted from / ° C to ± 100 ppm / ° C.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】重量%表示で、ガラスフリット60〜95
%とチタン酸塩5〜40%からなることを特徴とするセ
ラミック基板用組成物。
1. A glass frit 60-95 in weight percent.
% And 5 to 40% titanate, a composition for a ceramic substrate.
【請求項2】前記チタン酸塩がSrTiO3である請求
項1記載のセラミック基板用組成物。
2. The composition for a ceramic substrate according to claim 1, wherein the titanate is SrTiO 3 .
【請求項3】前記チタン酸塩がCaTiO3である請求
項1記載のセラミック基板用組成物。
3. The composition for a ceramic substrate according to claim 1, wherein the titanate is CaTiO 3 .
【請求項4】前記ガラスフリットが重量%表示で、Al
23 50〜60%、SiO2 25〜30%、Pb
O 7.8〜8.3%、CaO 3.3〜3.8%、B
2O3 2.5〜3.0%、MgO 1.1〜1.5
%、Na2O 1.1〜1.5%、K2O 0.8〜1.
1%で構成される請求項1乃至3いずれかに記載のセラ
ミック基板用組成物。
4. The glass frit is in weight% and is Al.
2 O 3 50-60%, SiO 2 25-30%, Pb
O 7.8-8.3%, CaO 3.3-3.8%, B
2 O3 2.5-3.0%, MgO 1.1-1.5
%, Na 2 O 1.1-1.5%, K 2 O 0.8-1.
The composition for a ceramic substrate according to claim 1, which is composed of 1%.
JP3239217A 1991-09-19 1991-09-19 Composition for ceramic substrate Expired - Fee Related JP2964725B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3239217A JP2964725B2 (en) 1991-09-19 1991-09-19 Composition for ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3239217A JP2964725B2 (en) 1991-09-19 1991-09-19 Composition for ceramic substrate

Publications (2)

Publication Number Publication Date
JPH0578165A true JPH0578165A (en) 1993-03-30
JP2964725B2 JP2964725B2 (en) 1999-10-18

Family

ID=17041491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3239217A Expired - Fee Related JP2964725B2 (en) 1991-09-19 1991-09-19 Composition for ceramic substrate

Country Status (1)

Country Link
JP (1) JP2964725B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473063B1 (en) 1995-05-30 2002-10-29 Canon Kabushiki Kaisha Electron source, image-forming apparatus comprising the same and method of driving such an image-forming apparatus
US8440121B2 (en) 2007-04-04 2013-05-14 Mbda Uk Limited High-dielectric material
US20170149301A1 (en) * 2014-03-31 2017-05-25 Valeo Equipements Electriques Moteur Brush-holder support plate for an electric motor, and corresponding brush-holder

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473063B1 (en) 1995-05-30 2002-10-29 Canon Kabushiki Kaisha Electron source, image-forming apparatus comprising the same and method of driving such an image-forming apparatus
US6760002B2 (en) 1995-05-30 2004-07-06 Canon Kabushiki Kaisha Electron source, image-forming apparatus comprising the same and method of driving such an image-forming apparatus
US8440121B2 (en) 2007-04-04 2013-05-14 Mbda Uk Limited High-dielectric material
US20170149301A1 (en) * 2014-03-31 2017-05-25 Valeo Equipements Electriques Moteur Brush-holder support plate for an electric motor, and corresponding brush-holder

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