JPH07172911A - Composition for ceramic substrate - Google Patents

Composition for ceramic substrate

Info

Publication number
JPH07172911A
JPH07172911A JP5318238A JP31823893A JPH07172911A JP H07172911 A JPH07172911 A JP H07172911A JP 5318238 A JP5318238 A JP 5318238A JP 31823893 A JP31823893 A JP 31823893A JP H07172911 A JPH07172911 A JP H07172911A
Authority
JP
Japan
Prior art keywords
composition
fired
ceramic substrate
glass frit
tcc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5318238A
Other languages
Japanese (ja)
Inventor
Hiroharu Nishimura
弘治 西村
Hiromi Tokunaga
裕美 徳永
Kenichi Hasegawa
健一 長谷川
Koichi Watanabe
浩一 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5318238A priority Critical patent/JPH07172911A/en
Publication of JPH07172911A publication Critical patent/JPH07172911A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To obtain the subject composition favorable for multilayer wiring, i.e., forming multilayered electronic circuits for conductors, resistors, etc. CONSTITUTION:This composition comprises 60-95wt.% of glass frit and 5-40wt.% of a solid solution composed of strontium titanate and calcium titanate. The composition can be fired at 750-950 deg.C, and the fired product satisfies various characteristics such as for multilayer wiring boards capable of using Au, Ag, Ag-Pd, Cu, etc., as internal electrode and those to form in layers electronic circuits for conductors, resistors, etc., such as volume resistivity, dielectric constant, dissipation facto, dielectric breakdown strength, flexural strength, etc. Besides, this composition is easy to control so as to be + or -0ppm/ deg.C to + or -100ppm/ deg.C in TCC.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、導体、抵抗体等の電子
回路を多層に形成する多層配線基板等に用いられるセラ
ミック基板用組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for a ceramic substrate used for a multilayer wiring substrate or the like in which electronic circuits such as conductors and resistors are formed in multiple layers.

【0002】[0002]

【従来の技術】現在、多層に回路を形成する電子部品と
しては、焼成したアルミナ基板上に回路、絶縁層を交互
に印刷し、これを焼成することによって製造する第1の
方法と、未焼成のセラミック基板に回路を印刷し、互い
に回路が接触しないようにこれを積層し、プレスした
後、焼成して製造する第2の方法がある。第1の方法の
ものは、回路の影響によってその上に形成する絶縁層に
凹凸が生じ、それは上層ほど大きくなる。この凹凸が大
きくなると、この上に次の回路を印刷することは難しく
なり、通常10層前後が限度とされている。これに対
し、第2の方法のものは、回路の印刷は常に平面に近い
状態の基板に対して行うために、積層数の多いものを製
造することができ、高密度の集積回路形成が行える。こ
の第2の方法の基板に使用するセラミック基板組成物と
しては、Al23 粉末と15wt%以下のガラス粉末
を無機バインダーで固定したものや、Al23 −Si
2 系にPbやBを混入させ低温で焼成したものがあ
る。
2. Description of the Related Art At present, as an electronic component for forming a circuit in multiple layers, a first method of manufacturing a circuit by alternately printing a circuit and an insulating layer on a fired alumina substrate, and baking the circuit, and a non-fired method. There is a second method in which the circuit is printed on the ceramic substrate, the circuits are laminated so that the circuits do not come into contact with each other, and the circuit is pressed and then fired. In the case of the first method, the insulating layer formed thereon has irregularities due to the influence of the circuit, and the unevenness becomes larger in the upper layer. When this unevenness becomes large, it becomes difficult to print the next circuit on it, and the limit is usually around 10 layers. On the other hand, in the second method, since the circuit printing is always performed on the substrate in a state close to a plane, it is possible to manufacture one having a large number of stacked layers and form a high-density integrated circuit. . The ceramic substrate composition used for the substrate of the second method includes Al 2 O 3 powder and glass powder of 15 wt% or less fixed with an inorganic binder, or Al 2 O 3 -Si.
There is an O 2 system mixed with Pb and B and baked at a low temperature.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来の第2の方法のAl23 粉末と15wt%以下のガ
ラス粉末を無機バインダーで固定したものは、焼成温度
が1450〜1600℃と極めて高いので、回路を構成
する材料もこの焼成温度で劣化しないMo、W等の高価
なものを使用し、又、還元雰囲気で焼成する必要がある
ので作業性が劣った。Al23 −SiO2 系にPbや
Bを10wt%程度混入させ低温で焼成したものは、温
度変化に対する静電容量の変化率(以下、TCCと記
す)が大きいという問題点があった。
However, the Al 2 O 3 powder of the second conventional method and the glass powder of 15 wt% or less fixed by an inorganic binder have an extremely high firing temperature of 1450 to 1600 ° C. Therefore, as the material for forming the circuit, expensive materials such as Mo and W that do not deteriorate at this firing temperature are used, and since it is necessary to fire in a reducing atmosphere, workability is poor. A material obtained by mixing Pb or B in an Al 2 O 3 —SiO 2 system at about 10 wt% and firing at a low temperature has a problem that the rate of change in capacitance with temperature change (hereinafter referred to as TCC) is large.

【0004】本発明は、上記従来の問題点を解決するも
ので、極めて低い温度、すなわち750〜950℃で焼
成でき、Au、Ag、Ag−Pd、Cu等のペーストを
内部電極として使用することが可能な、しかも体積固有
抵抗率、誘電率、誘電正接、絶縁破壊強度、曲げ強度
等、導体、抵抗体等の電子回路を多層に形成する多層配
線基板としての諸特性を充足し、さらに、TCCが±0
ppm/℃〜100ppm/℃と調整可能なセラミック
基板用組成物を提供するものである。
The present invention solves the above-mentioned conventional problems, and can be fired at an extremely low temperature, that is, 750 to 950 ° C., and uses a paste of Au, Ag, Ag-Pd, Cu or the like as an internal electrode. In addition, the volume specific resistance, the dielectric constant, the dielectric loss tangent, the dielectric breakdown strength, the bending strength, etc., satisfy the various characteristics as a multilayer wiring board for forming electronic circuits such as conductors and resistors in multiple layers. TCC is ± 0
The present invention provides a composition for a ceramic substrate that can be adjusted to ppm / ° C to 100 ppm / ° C.

【0005】[0005]

【課題を解決するための手段】この課題を解決するため
の本発明のセラミック基板用組成物は、wt%表示で、
ガラスフリット60〜95、SrTiO3 とCaTiO
3 の固溶体5〜40、からなるセラミック基板用組成物
で、具体的には、固溶体は、モル%表示でSrTiO3
55〜75、CaTiO3 25〜45の組成物である。
又、ガラスフリットは、wt%で本質的に、Al23
40〜50、SiO2 25〜30、ZnO 5〜15、
TiO2 5〜15、CaO 3.3〜3.8、B23
2.5〜3.0、MgO 1.1〜1.5、Na2
1.1〜1.5、K2 O 0.8〜1.1、からなる構
成を有している。
A composition for a ceramic substrate of the present invention for solving this problem is expressed in wt%.
Glass frit 60-95, SrTiO 3 and CaTiO
The composition for a ceramic substrate comprising the solid solutions 5 to 40 of 3, wherein the solid solution is represented by mol% SrTiO 3
55 to 75, CaTiO 3 25 to 45.
Further, the glass frit is essentially composed of Al 2 O 3 at wt%.
40~50, SiO 2 25~30, ZnO 5~15 ,
TiO 2 5-15, CaO 3.3-3.8, B 2 O 3
2.5-3.0, MgO 1.1-1.5, Na 2 O
It has a structure consisting of 1.1 to 1.5 and K 2 O 0.8 to 1.1.

【0006】ガラスフリットが60wt%より少ない
と、焼成温度が高くなり、本発明の課題である低温度で
の焼成を行うことが困難である。一方、ガラスフリット
が、95wt%より多いと、焼成体の曲げ強度、及び耐
湿性が低下し好ましくない。又、TCCの調整も困難と
なる。
If the glass frit is less than 60 wt%, the firing temperature will be high, and it will be difficult to perform firing at a low temperature, which is the subject of the present invention. On the other hand, when the glass frit is more than 95 wt%, the bending strength and moisture resistance of the fired product are deteriorated, which is not preferable. In addition, it becomes difficult to adjust the TCC.

【0007】SiO2 は、25wt%より少ないと、軟
化温度が低くなり焼成時に大きな変形を生じ、30wt
%より多いと、焼成温度が高くなり過ぎ、いずれも好ま
しくない。
If the SiO 2 content is less than 25 wt%, the softening temperature becomes low and a large deformation occurs during firing, resulting in 30 wt%.
If it is more than%, the firing temperature becomes too high, which is not preferable.

【0008】ZnOは、ガラスの溶解性を向上させるた
めに、5wt%以上の添加が望ましい。15wt%より
多いと、ガラスの軟化温度が低くなり過ぎ、焼成時に大
きな変形を生じやすく、好ましくない。
ZnO is preferably added in an amount of 5 wt% or more in order to improve the solubility of glass. If it is more than 15 wt%, the softening temperature of the glass tends to be too low, and large deformation tends to occur during firing, which is not preferable.

【0009】TiO2 は、ガラスの溶融性や化学的安定
性を向上させるために5wt%以上の添加が望ましい。
15wt%より多いと、ガラスの軟化温度が高くなり、
焼成温度が高くなり過ぎ、好ましくない。
TiO 2 is preferably added in an amount of 5 wt% or more in order to improve the melting property and chemical stability of glass.
If it is more than 15 wt%, the softening temperature of the glass becomes high,
The firing temperature becomes too high, which is not preferable.

【0010】CaOは、ガラスフリット製造時の溶融性
の向上、及びガラスの熱膨張係数を調整する目的で添加
する。3.3wt%より少ないと、溶融性が向上せず、
フリット製造時に失透を生じやすい。3.8wt%より
多いと、熱膨張係数が大きくなり過ぎ、いずれも好まし
くない。
CaO is added for the purpose of improving the meltability during the production of glass frit and adjusting the coefficient of thermal expansion of glass. When it is less than 3.3 wt%, the meltability is not improved,
Devitrification is likely to occur during frit production. When it is more than 3.8 wt%, the coefficient of thermal expansion becomes too large, which is not preferable.

【0011】B23 は、フラックスであり、2.5w
t%より少ないと、焼成温度が高くなり過ぎ、3.0w
t%より多いと、ガラスの化学的安定性が低下し、いず
れも好ましくない。
B 2 O 3 is a flux, 2.5 w
If it is less than t%, the firing temperature becomes too high and 3.0w
If it is more than t%, the chemical stability of the glass is lowered and both are not preferable.

【0012】MgOは、ガラスフリット製造時の溶融性
の向上、及びガラスの熱膨張係数を調整する目的で添加
する。1.1wt%より少ないと、溶融性が向上せず、
フリット製造時に失透を生じやすい。1.5wt%より
多いと、熱膨張係数が大きくなり過ぎ、いずれも好まし
くない。
MgO is added for the purpose of improving the meltability during the production of glass frit and adjusting the thermal expansion coefficient of glass. If it is less than 1.1 wt%, the meltability is not improved,
Devitrification is likely to occur during frit production. If it exceeds 1.5 wt%, the coefficient of thermal expansion becomes too large, which is not preferable.

【0013】Na2 Oは、ガラスの溶解性を向上させる
ために、1.1wt%以上の添加が望ましい。1.5w
t%より多いと、ガラスの軟化温度が低くなり過ぎ、焼
成時に大きな変形を生じやすく、好ましくない。
Na 2 O is preferably added in an amount of 1.1 wt% or more in order to improve the glass solubility. 1.5w
If it is more than t%, the softening temperature of the glass tends to be too low, and large deformation tends to occur during firing, which is not preferable.

【0014】K2 Oは、ガラスの溶解性を向上させるた
めに、0.8wt%以上の添加が望ましい。1.1wt
%より多いと、ガラスの軟化温度が低くなり過ぎ、焼成
時に大きな変形を生じやすく、好ましくない。
K 2 O is preferably added in an amount of 0.8 wt% or more in order to improve the melting property of glass. 1.1 wt
If it is more than%, the softening temperature of the glass tends to be too low, and large deformation tends to occur during firing, which is not preferable.

【0015】Al23 は、セラミックの機械的強度を
向上させるために、40wt%以上の添加が望ましい。
50wt%以下の添加では、焼成温度が高くなり過ぎ、
好ましくない。
Al 2 O 3 is preferably added in an amount of 40 wt% or more in order to improve the mechanical strength of ceramics.
If the addition amount is 50 wt% or less, the firing temperature becomes too high,
Not preferable.

【0016】SrTiO3 とCaTiO3 の固溶体は、
モル%で、SrTiO3 55〜75、CaTiO3 25
〜45が望ましい。SrTiO3 とCaTiO3 がそれ
ぞれ、55以下、45以上である場合は、不均一な固溶
体形成により、この固溶体を用いてTCCを調整した場
合には、直線的な変化を示さず、又、TCCが−25℃
〜+20℃では正、+20℃〜+85℃では、負の値を
示すために、調整が困難である。SrTiO3 とCaT
iO3 がそれぞれ、75以上、25以下である場合も同
様である。
The solid solution of SrTiO 3 and CaTiO 3 is
Mol%, SrTiO 3 55-75, CaTiO 3 25
~ 45 is desirable. When SrTiO 3 and CaTiO 3 are 55 or less and 45 or more, respectively, when the TCC is adjusted using this solid solution due to the formation of an inhomogeneous solid solution, there is no linear change, and the TCC is -25 ° C
It is difficult to adjust because it is positive at + 20 ° C and negative at + 20 ° C to + 85 ° C. SrTiO 3 and CaT
The same applies when iO 3 is 75 or more and 25 or less, respectively.

【0017】[0017]

【作用】この構成によって、従来に比べ極めて低い温
度、すなわち750〜950℃で焼成でき、厚膜技術で
広く使用されているAu、Ag、Ag−Pd、Cu等の
ペーストを内部電極として適用を可能とし、又、その焼
成体は、曲げ強度が大きく、熱伝導率に優れ、誘電率が
比較的小さく、絶縁抵抗が大きく、耐湿性に優れてお
り、特に正のTCC特性を持つガラスフリットと負のT
CC特性を持つチタン酸塩系固溶体の焼成反応により、
TCCの調整を容易にすることができる。
With this configuration, it is possible to perform firing at a temperature extremely lower than the conventional one, that is, 750 to 950 ° C., and pastes such as Au, Ag, Ag—Pd, Cu which are widely used in thick film technology are applied as internal electrodes. In addition, the fired body has a large bending strength, an excellent thermal conductivity, a relatively small dielectric constant, a large insulation resistance, and an excellent moisture resistance, and particularly a glass frit having a positive TCC characteristic. Negative T
By the firing reaction of titanate solid solution having CC characteristics,
Adjustment of TCC can be facilitated.

【0018】[0018]

【実施例】以下、本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.

【0019】まずガラスフリットは、wt%で、SiO
2 27、ZnO 8.0、TiO28.0、CaO
3.6、B23 2.8、MgO 1.4、Na2
1.3、K2 O 0.9、の組成になるように、通常の
方法により各原料を調合し、1400〜1500℃の温
度にて撹拌しながら溶融し、溶融後、水砕又はフレーク
状とし、これにAl23 47wt%を添加し、ガラス
フリットを製造した。次に、このガラスフリットとSr
TiO3 とCaTiO3 からなるチタン酸塩固溶体と
が、それぞれ90wt%、10wt%になるように秤量
し、ボールミルにて粉砕、混合し本発明の組成物を得
た。この粉砕混合した組成物に、バインダーを10wt
%添加し造粒、成形後、900℃にて15分焼成した。
この焼成体の相対密度を測定したところ、99.98%
であったので、直径30mm、厚み0.35mmに加工
後、Ag電極を焼き付け、TCCを測定したところ、−
25℃〜+85℃にて±0ppm/℃であった。そこ
で、この粉砕混合した組成物に種々のバインダーや可塑
剤、溶剤を添加、混練して粘度10ps〜30psのペ
ーストを作製した。このペーストを常法のドクター法に
より、厚み0.05mmのグリーンシートとした。この
グリーンシートを50枚重ね、その後、35℃にて約5
0トンの圧力にて熱圧着させ、900℃で15分焼成し
た。焼成したシートの各種特性を測定したところ、体積
固有抵抗率1014~16 Ω、誘電率9.8、誘電正接≦5
×10-4、絶縁破壊強度700〜900kV/cm、曲
げ強度2000〜2500kg/cm2 、TCC(−2
5℃〜+85℃)±0ppm/℃であった。即ち、導
体、抵抗体等の電子回路を多層に形成する多層配線基板
としての良好なセラミック基板の特性を満足する結果を
得た。
First, the glass frit is made of SiO 2 in wt%.
2 27, ZnO 8.0, TiO 2 8.0, CaO
3.6, B 2 O 3 2.8, MgO 1.4, Na 2 O
Each raw material was blended by a usual method so as to have a composition of 1.3, K 2 O 0.9, melted with stirring at a temperature of 1400 to 1500 ° C., and then melted or granulated or flaked. Then, 47 wt% of Al 2 O 3 was added thereto to manufacture a glass frit. Next, this glass frit and Sr
A titanate solid solution containing TiO 3 and CaTiO 3 was weighed so as to be 90 wt% and 10 wt%, respectively, and pulverized and mixed with a ball mill to obtain a composition of the present invention. To this pulverized and mixed composition, 10 wt.
%, Added, granulated, molded, and fired at 900 ° C. for 15 minutes.
When the relative density of this fired body was measured, it was 99.98%
Therefore, after processing to a diameter of 30 mm and a thickness of 0.35 mm, an Ag electrode was baked and the TCC was measured.
It was ± 0 ppm / ° C at 25 ° C to + 85 ° C. Then, various binders, plasticizers, and solvents were added to the pulverized and mixed composition and kneaded to prepare a paste having a viscosity of 10 ps to 30 ps. This paste was made into a green sheet having a thickness of 0.05 mm by a conventional doctor method. 50 sheets of this green sheet are piled up, and then about 5 at 35 ℃
It was thermocompression bonded at a pressure of 0 ton and baked at 900 ° C. for 15 minutes. Various characteristics of the fired sheet were measured, and the volume specific resistance was 10 14 to 16 Ω, the dielectric constant was 9.8, and the dielectric loss tangent was ≦ 5.
× 10 -4 , dielectric breakdown strength 700 to 900 kV / cm, bending strength 2000 to 2500 kg / cm 2 , TCC (-2
5 ° C to + 85 ° C) ± 0 ppm / ° C. That is, the results satisfying the characteristics of a good ceramic substrate as a multilayer wiring substrate in which electronic circuits such as conductors and resistors are formed in multiple layers were obtained.

【0020】さらに、上記ガラスフリットと、SrTi
3 とCaTiO3 からなるチタン酸塩固溶体とが、そ
れぞれ94wt%、6wt%になるように秤量し、ボー
ルミルにて粉砕、混合し上記方法にてグリーンシートの
焼成体を得た。この場合の焼成温度は、800℃であっ
た。焼成したシートの各種特性を測定したところ、体積
固有抵抗率、誘電率、誘電正接、絶縁破壊強度、曲げ強
度等は、上記と同等の値を得た。TCCは、+50pp
m/℃であった。ガラスフリットと、SrTiO3 とC
aTiO3 からなるチタン酸塩固溶体とが、それぞれ7
0wt%、30wt%の場合は、焼成温度870℃に
て、体積固有抵抗率、誘電率、誘電正接、絶縁破壊強
度、曲げ強度等は、上記と同等の値を得た。TCCは、
−20ppm/℃であった。ガラスフリットと、SrT
iO3 とCaTiO3 からなるチタン酸塩固溶体とが、
それぞれ60wt%、40wt%の場合は、焼成温度9
20℃にて、体積固有抵抗率、誘電率、誘電正接、絶縁
破壊強度、曲げ強度等は、上記と同等の値を得た。TC
Cは、−30ppm/℃であった。さらに、Au、A
g、Ag−Pd、Cu等の、ペーストを内部電極とし、
積層した、焼成体についても同様の結果を得た。以上の
結果を(表1)〜(表4)に示す。
Further, the glass frit and SrTi
The titanate solid solution consisting of O 3 and CaTiO 3 was weighed so as to be 94 wt% and 6 wt%, respectively, pulverized and mixed by a ball mill, and a green sheet fired body was obtained by the above method. The firing temperature in this case was 800 ° C. When various characteristics of the fired sheet were measured, volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc. were the same as above. + 50pp for TCC
It was m / ° C. Glass frit, SrTiO 3 and C
The titanate solid solution composed of aTiO 3 is 7
In the case of 0 wt% and 30 wt%, the volume resistivity, the dielectric constant, the dielectric loss tangent, the dielectric breakdown strength, the bending strength, etc., obtained at the firing temperature of 870 ° C. were equivalent to the above values. TCC is
It was −20 ppm / ° C. Glass frit and SrT
A titanate solid solution composed of iO 3 and CaTiO 3 ,
For 60 wt% and 40 wt% respectively, firing temperature is 9
At 20 ° C., the volume specific resistance, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc. were the same values as above. TC
C was −30 ppm / ° C. Furthermore, Au, A
g, Ag-Pd, Cu, etc. as the internal electrodes,
Similar results were obtained for the laminated fired bodies. The above results are shown in (Table 1) to (Table 4).

【0021】[0021]

【表1】 [Table 1]

【0022】[0022]

【表2】 [Table 2]

【0023】[0023]

【表3】 [Table 3]

【0024】[0024]

【表4】 [Table 4]

【0025】本発明は(表1)〜(表4)からわかるよ
うに、従来の組成物と比較して極めて低い温度で焼成が
可能であり、かつ、機械的特性や電気的特性に優れ、T
CCの調整が容易であることがわかった。
As can be seen from (Table 1) to (Table 4), the present invention is capable of firing at an extremely low temperature as compared with conventional compositions, and has excellent mechanical properties and electrical properties, T
It has been found that adjustment of CC is easy.

【0026】[0026]

【発明の効果】以上のように、本発明によれば、極めて
低い温度、すなわち750〜950℃で焼成が実現でき
るようになり、Au、Ag、Ag−Pd、Cu等のペー
ストを内部電極として使用することが可能となった。さ
らに、焼成体の各種要求特性、すなわち、体積固有抵抗
率、誘電率、誘電正接、絶縁破壊強度、曲げ強度等、導
体、抵抗体等の電子回路を多層に形成する多層配線基板
としての良好なセラミック基板の特性を満足し、さら
に、TCCも±0ppm/℃〜±100ppm/℃と調
整が容易なため、大幅なコストダウンが可能なセラミッ
ク基板用組成物を実現できるものである。
As described above, according to the present invention, the firing can be realized at an extremely low temperature, that is, 750 to 950 ° C., and the paste of Au, Ag, Ag—Pd, Cu or the like is used as the internal electrode. It is now possible to use. Furthermore, various required characteristics of the fired body, that is, volume specific resistance, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc., are excellent as a multilayer wiring board for forming electronic circuits such as conductors and resistors in multiple layers. Since the characteristics of the ceramic substrate are satisfied and the TCC is easily adjusted to ± 0 ppm / ° C. to ± 100 ppm / ° C., it is possible to realize a composition for a ceramic substrate capable of significantly reducing the cost.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H05K 3/46 H 6921−4E (72)発明者 渡辺 浩一 大阪府門真市大字門真1006番地 松下電器 産業株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication H05K 3/46 H 6921-4E (72) Inventor Koichi Watanabe 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Sangyo Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】wt%表示で、ガラスフリット60〜9
5、チタン酸ストロンチウム(以下、SrTiO3 と記
す)とチタン酸カルシウム(以下、CaTiO3と記
す)の固溶体5〜40、からなることを特徴とするセラ
ミック基板用組成物。
1. Glass frit 60-9 in wt% display.
5. A composition for a ceramic substrate comprising a solid solution 5 to 40 of strontium titanate (hereinafter referred to as SrTiO 3 ) and calcium titanate (hereinafter referred to as CaTiO 3 ).
【請求項2】前記固溶体は、モル%表示でSrTiO3
55〜75、CaTiO3 25〜45からなることを特
徴とする請求項1記載のセラミック基板用組成物。
2. The solid solution is SrTiO 3 in mol%.
55 to 75, CaTiO 3, characterized in that it consists of 25 to 45 claims 1 ceramic substrate composition according.
【請求項3】前記ガラスフリットは、wt%で本質的
に、Al23 40〜50、SiO2 25〜30、Zn
O 5〜15、TiO2 5〜15、CaO 3.3〜
3.8、B23 2.5〜3.0、MgO 1.1〜
1.5、Na2 O 1.1〜1.5,K2 O 0.8〜
1.1、で構成されることを特徴とする請求項1記載の
セラミック基板用組成物。
3. The glass frit is essentially wt% Al 2 O 3 40-50, SiO 2 25-30, Zn.
O 5-15, TiO 2 5-15, CaO 3.3-
3.8, B 2 O 3 2.5~3.0, MgO 1.1~
1.5, Na 2 O 1.1 to 1.5, K 2 O 0.8 to
1. The composition for ceramic substrates according to claim 1, which is composed of 1.
JP5318238A 1993-12-17 1993-12-17 Composition for ceramic substrate Pending JPH07172911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5318238A JPH07172911A (en) 1993-12-17 1993-12-17 Composition for ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5318238A JPH07172911A (en) 1993-12-17 1993-12-17 Composition for ceramic substrate

Publications (1)

Publication Number Publication Date
JPH07172911A true JPH07172911A (en) 1995-07-11

Family

ID=18096974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5318238A Pending JPH07172911A (en) 1993-12-17 1993-12-17 Composition for ceramic substrate

Country Status (1)

Country Link
JP (1) JPH07172911A (en)

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