JPH04286181A - Composition for ceramic board - Google Patents

Composition for ceramic board

Info

Publication number
JPH04286181A
JPH04286181A JP3049518A JP4951891A JPH04286181A JP H04286181 A JPH04286181 A JP H04286181A JP 3049518 A JP3049518 A JP 3049518A JP 4951891 A JP4951891 A JP 4951891A JP H04286181 A JPH04286181 A JP H04286181A
Authority
JP
Japan
Prior art keywords
composition
titanate
glass frit
ceramic board
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3049518A
Other languages
Japanese (ja)
Inventor
Hiroharu Nishimura
西村 弘治
Kusuo Kuguhara
久々原 九州男
Makoto Ogawa
誠 小川
Katsumi Sasaki
勝美 佐々木
Hiromitsu Tagi
多木 宏光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3049518A priority Critical patent/JPH04286181A/en
Publication of JPH04286181A publication Critical patent/JPH04286181A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PURPOSE:To provide a composition for a ceramic board, which can be baked at an extremely low temperature, in which the paste of Au, Ag, etc., can be used as an internal electrode, which satisfies various required characteristics such as volume specific resistivity, a dielectric constant, a dielectric loss tangent, breakdown strength, etc., and in which the rate of change of electrostatic capaci tance to a temperature change can be adjusted as + or -0 to + or -100ppm/ deg.C, in the composition for the ceramic board used for manufacturing various multilayer interconnection boards. CONSTITUTION:The title composition is composed of 60-95wt.% glass frit and 40-5wt.% titanate, said titanate consists of SrTiO3, CaTiO3, etc., or the solid solution, etc., of these titanate, and said glass frit is made up of 30-40wt.% SiO2, 10-20wt.% Al2O3, 5-20wt.% CaO+MgO, 5-15wt.% ZnO, 10-20wt.% TiO2, 0.5-2wt.% B2O3 and 0.2-1wt.% ZrO2.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、導体,抵抗体等の電子
回路を多層に形成する多層配線基板に良好なセラミック
基板用組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate composition suitable for multilayer wiring boards on which electronic circuits such as conductors and resistors are formed in multiple layers.

【0002】0002

【従来の技術】現在、多層に回路を形成する電子部品と
しては、焼成したアルミナ基板上に回路、絶縁層を交互
に印刷しこれを焼成することによって製造する第1の方
法と、未焼成のセラミック基板に回路を印刷し、互いに
回路が接触しないようにこれを積層しプレスした後、焼
成して製造する第2の方法がある。第1の方法のものは
、回路の影響によってその上に形成する絶縁層に凹凸が
生じ、それは上層ほど大きくなる。この凹凸が大きくな
ると、この上に次の回路を印刷することは難しく、通常
10層前後が限度とされている。これに対し、第2の方
法のものは、回路の印刷は常に平面に近い状態の基板に
対して行なうため、積層数の多いものを製造することが
でき、高密度の集積回路形成が行なえる。この第2の方
法の基板に使用するセラミック組成物としては、Al2
O3粉末と15wt%以下のガラス粉末を有機バインダ
ーで固定したものや、Al2O3−SiO2系にPbや
Bを混入させ低温で焼成したものがあり、これらは、加
藤正利、大岩誠五「工業材料」vol.35,No.1
6,P51−58,1987、杉下信行「日本科学情報
」HICペースト材料と印刷焼成技術,P13−21,
1989等に開示されている。
[Prior Art] Currently, electronic components with multilayer circuits are manufactured by printing circuits and insulating layers alternately on a sintered alumina substrate and firing them; A second method is to print a circuit on a ceramic substrate, laminate the circuits so that they do not touch each other, press them, and then bake them. In the first method, unevenness occurs in the insulating layer formed thereon due to the influence of the circuit, and the unevenness becomes larger as the upper layer increases. When the unevenness becomes large, it becomes difficult to print the next circuit on top of the unevenness, and the limit is usually around 10 layers. In contrast, with the second method, circuits are always printed on a substrate that is nearly flat, so it is possible to manufacture products with a large number of laminated layers, making it possible to form high-density integrated circuits. . The ceramic composition used for the substrate in this second method is Al2
There are products in which O3 powder and 15 wt% or less glass powder are fixed with an organic binder, and products in which Pb and B are mixed into the Al2O3-SiO2 system and fired at low temperatures. vol. 35, No. 1
6, P51-58, 1987, Nobuyuki Sugishita "Japanese Science Information" HIC paste materials and printing and firing technology, P13-21,
1989, etc.

【0003】0003

【発明が解決しようとする課題】しかしながら上記従来
の第2の方法の内、Al2O3粉末と15wt%以下の
ガラス粉末を有機バインダーで固定したものは、焼成温
度が1450°〜1600℃と極めて高いので、回路を
構成する材料もこの焼成温度で劣化しないMo,W等の
高価なものを使用しなければならず、又還元雰囲気で焼
成する必要があるので生産性,作業性が悪いという問題
点があった。Al2O3−SiO2系にPbやBを混入
させたものは低温で焼成できる利点があるが、温度変化
に対する静電容量の変化率(以下、TCCと記す)が大
きすぎ、品質の安定性に欠けるという問題点があった。
[Problems to be Solved by the Invention] However, in the second conventional method described above, the one in which Al2O3 powder and 15 wt% or less glass powder are fixed with an organic binder has an extremely high firing temperature of 1450° to 1600°C. In addition, expensive materials such as Mo and W, which do not deteriorate at this firing temperature, must be used to construct the circuit, and the firing must be performed in a reducing atmosphere, resulting in poor productivity and workability. there were. The Al2O3-SiO2 system mixed with Pb and B has the advantage of being able to be fired at low temperatures, but the rate of change in capacitance (hereinafter referred to as TCC) with respect to temperature changes is too large and the quality is said to be unstable. There was a problem.

【0004】本発明は上記従来の問題点を解決するもの
で、極めて低い温度、即ち750°〜950℃で焼成で
き、Au,Ag,Ag−Pd,Cu等のペーストを内部
電極として使用することも可能で、しかも体積固有抵抗
率,誘電率,誘電正接,絶縁破壊強度等,電子回路を多
層に形成する多層配線基板としての諸要求特性を充足し
、さらに、TCCが±0ppm/℃〜±100ppm/
℃の範囲で調整が可能なセラミック基板用組成物を提供
することを目的とする。
[0004] The present invention solves the above-mentioned conventional problems, and can be fired at an extremely low temperature, that is, 750° to 950°C, and pastes such as Au, Ag, Ag-Pd, and Cu can be used as internal electrodes. Moreover, it satisfies the characteristics required for a multilayer wiring board that forms electronic circuits in multiple layers, such as volume resistivity, dielectric constant, dielectric loss tangent, and dielectric breakdown strength. Furthermore, TCC is ±0 ppm/℃ to ± 100ppm/
The object of the present invention is to provide a composition for a ceramic substrate that can be adjusted within a temperature range of .degree.

【0005】[0005]

【課題を解決するための手段】この目的を解決するため
の本発明のセラミック基板用組成物は、60〜95wt
%のガラスフリットと40〜5wt%のチタン酸塩とか
らなり、具体的には、前記チタン酸塩は、SrTiO3
,CaTiO3,MgTiO3,BaTiO3、又は、
これらチタン酸塩の固溶体の組成物である。又、前記ガ
ラスフリットは、重量%で本質的に、SiO2が30〜
40、Al2O3が10〜20、CaO+MgOが5〜
20、ZnOが5〜15、TiO2が10〜20、B2
O3が0.5〜2、ZrO2が0.2〜1からなる構成
を有している。
[Means for Solving the Problems] The composition for ceramic substrates of the present invention to solve this object has a weight of 60 to 95 wt.
% glass frit and 40-5 wt% titanate, specifically, the titanate is SrTiO3
, CaTiO3, MgTiO3, BaTiO3, or
These are solid solution compositions of titanates. Further, the glass frit essentially contains SiO2 in a range of 30 to 30% by weight.
40, Al2O3 is 10-20, CaO+MgO is 5-
20, ZnO 5-15, TiO2 10-20, B2
It has a structure in which O3 is 0.5 to 2 and ZrO2 is 0.2 to 1.

【0006】ガラスフリットが、60wt%未満では焼
成温度が高くなり、本発明の目的である低温度での焼成
を行なうことが困難である。一方、ガラスフリットが9
5wt%を越えると焼成体の曲げ強度、及び耐湿性が低
下し、好ましくない。また、TCCの調整も困難となる
。 ガラスフリットは、上記範囲中65wt%〜94wt%
の範囲がより望ましい。
[0006] If the glass frit is less than 60 wt%, the firing temperature will be high, making it difficult to perform the firing at a low temperature, which is the object of the present invention. On the other hand, the glass frit is 9
If it exceeds 5 wt%, the flexural strength and moisture resistance of the fired product will decrease, which is not preferable. Furthermore, it becomes difficult to adjust the TCC. Glass frit is 65wt% to 94wt% in the above range
is more desirable.

【0007】SiO2は30wt%未満では軟化温度が
低くなり焼成時に大きな変形を生じ、40wt%を越え
ると焼成温度が高くなり過ぎ、いずれも好ましくない。
[0007] If SiO2 is less than 30 wt%, the softening temperature will be low and large deformation will occur during firing, and if it exceeds 40 wt%, the firing temperature will become too high, both of which are undesirable.

【0008】Al2O3は、10wt%未満では焼成体
の曲げ強度が劣り、20wt%を越えるとガラスの軟化
温度が高くなり、高い焼成温度を必要とするので、いず
れも好ましくない。
[0008] If Al2O3 is less than 10 wt%, the flexural strength of the fired product will be poor, and if it exceeds 20 wt%, the softening temperature of the glass will be high and a high firing temperature will be required, so both are not preferred.

【0009】CaO,MgOは、ガラスフリット製造時
の溶融性の向上、及びガラスの熱膨張係数を調整する目
的で添加する。これらの総量が5wt%未満では上記溶
融性が充分に向上せず、フリット製造時に失透を生じや
すく、20wt%を越えると熱膨張係数が大きくなり過
ぎるので、いずれも好ましくない。
[0009] CaO and MgO are added for the purpose of improving the meltability during glass frit production and adjusting the thermal expansion coefficient of the glass. If the total amount is less than 5 wt%, the above-mentioned meltability will not be sufficiently improved and devitrification will easily occur during frit production, and if it exceeds 20 wt%, the coefficient of thermal expansion will become too large, so both are not preferred.

【0010】ZnOは、ガラスの溶融性を向上させるた
めに5wt%以上の添加が望ましい。15wt%を越え
るとガラスの軟化温度が低くなり過ぎ、焼成時に大きな
変形を生じやすく好ましくない。
[0010] ZnO is desirably added in an amount of 5 wt % or more in order to improve the meltability of the glass. If it exceeds 15 wt%, the softening temperature of the glass becomes too low and large deformation tends to occur during firing, which is not preferable.

【0011】TiO2は、ガラスの溶融性や化学的安定
性を向上させるために10wt%以上の添加が望ましい
。 20wt%を越えるとガラスの軟化温度が高くなり、高
い焼成温度を必要とするので好ましくない。
[0011] TiO2 is preferably added in an amount of 10 wt% or more in order to improve the meltability and chemical stability of the glass. If it exceeds 20 wt%, the softening temperature of the glass will become high and a high firing temperature will be required, which is not preferable.

【0012】B2O3は、フラックスであり、0.5w
t%未満では焼成温度が高くなり過ぎ、2wt%を越え
るとガラスの化学的安定性が低下し、いずれも好ましく
ない。
[0012] B2O3 is a flux, 0.5w
If it is less than t%, the firing temperature becomes too high, and if it exceeds 2wt%, the chemical stability of the glass decreases, both of which are unfavorable.

【0013】ZrO2は、ガラスの化学的安定性を向上
させるために、0.2wt%以上の添加が望ましいが、
1wt%を越えるとガラスフリット製造時の溶融性を悪
くするので好ましくない。
[0013] ZrO2 is preferably added in an amount of 0.2 wt% or more in order to improve the chemical stability of the glass.
If it exceeds 1 wt%, it is not preferable because it impairs the melting properties during glass frit production.

【0014】[0014]

【作用】この構成によって、従来に比べ極めて低い温度
、すなわち750°〜950℃で焼成でき、厚膜技術で
広く使用されているAu,Ag,Ag−Pd,Cu等の
ペーストを内部電極として適用を可能とし、又、その焼
成体は、曲げ強度が大きく、熱伝導率に優れ、誘電率が
小さく、絶縁抵抗が大きく、耐湿性に優れており、特に
、正のTCC特性を持つガラスフリットと負のTCC特
性を持つチタン酸塩系の焼成反応により、TCCの調整
を容易にすることができる。
[Operation] With this configuration, it is possible to bake at an extremely low temperature compared to conventional ones, that is, 750° to 950°C, and pastes such as Au, Ag, Ag-Pd, and Cu, which are widely used in thick film technology, can be used as internal electrodes. In addition, the fired body has high bending strength, excellent thermal conductivity, low dielectric constant, high insulation resistance, and excellent moisture resistance, and is particularly compatible with glass frits that have positive TCC characteristics. The titanate-based calcination reaction with negative TCC characteristics can facilitate the adjustment of TCC.

【0015】[0015]

【実施例】以下本発明の一実施例について説明する。[Embodiment] An embodiment of the present invention will be described below.

【0016】ガラスフリットは、重量%で、SiO2が
38、Al2O3が19、CaO+MgOが18、Zn
Oが13、TiO2が10、B2O3が1.5、ZrO
2が0.5の組成になるように、各原料を調合し、14
00°〜1500℃の温度にて攪拌しながら溶融し、溶
融後、水砕又は、フレーク状としガラスフリットを製造
した。
[0016] The glass frit has SiO2 of 38, Al2O3 of 19, CaO+MgO of 18, and Zn in weight percent.
O is 13, TiO2 is 10, B2O3 is 1.5, ZrO
Mix each raw material so that 2 is 0.5, and 14
The mixture was melted with stirring at a temperature of 00° to 1500°C, and after melting, it was pulverized into water or flakes to produce a glass frit.

【0017】次に、このガラスフリットとチタン酸塩と
してSrTiO3を用い、それぞれ85wt%,15w
t%になるように秤量し、ボールミルにて粉砕、混合し
本発明の組成物を得た。
Next, using SrTiO3 as the glass frit and titanate, 85 wt% and 15 wt%, respectively.
The mixture was weighed so as to yield t%, ground in a ball mill, and mixed to obtain a composition of the present invention.

【0018】この粉砕混合した組成物に、バインダーを
10%添加し、造粒,成型後、850℃にて15分焼成
した。この焼成体を直径30mm,厚み0.35mmに
加工後、Ag電極を焼き付け、TCCを測定したところ
、−25℃〜85℃にて±0ppm/℃であった。
To this pulverized and mixed composition, 10% of a binder was added, and after granulation and molding, it was baked at 850° C. for 15 minutes. After processing this fired body into a diameter of 30 mm and a thickness of 0.35 mm, an Ag electrode was baked and the TCC was measured, and it was found to be ±0 ppm/°C from -25°C to 85°C.

【0019】次に、この粉砕、混合した組成物に種々の
バインダーや可塑剤、溶剤を添加,混練して粘度10p
s〜30psのペーストを作製した。このペーストを常
法のドクターブレード法により、厚み約0.1mmのグ
リーンシートとした。このグリーンシートを50枚重ね
、その後、35℃にて約50トンの圧力にて熱圧着させ
、850℃にて30分焼成した。焼成したシートの各種
特性を測定したところ、体積固有抵抗率1014〜10
16Ωcm、誘電率12〜14、誘電正接≦5×10−
4、絶縁破壊強度750〜900KV/cm、曲げ強度
2000〜2500kg/cm 、TCC(−25℃〜
85℃)±0ppm/℃であった。すなわち、導体,抵
抗体等の電子回路を多層に形成する多層配線基板として
良好なセラミック基板の要求特性を満足する結果を得た
Next, various binders, plasticizers, and solvents are added and kneaded to this pulverized and mixed composition to obtain a viscosity of 10p.
A paste of s to 30 ps was prepared. This paste was made into a green sheet with a thickness of about 0.1 mm by a conventional doctor blade method. Fifty of these green sheets were stacked, and then thermocompression bonded at 35° C. under a pressure of about 50 tons, and baked at 850° C. for 30 minutes. When various properties of the fired sheet were measured, the specific volume resistivity was 1014 to 10.
16Ωcm, dielectric constant 12-14, dielectric loss tangent ≦5×10-
4. Dielectric breakdown strength 750-900KV/cm, bending strength 2000-2500kg/cm, TCC (-25℃~
85°C) ±0 ppm/°C. That is, results were obtained that satisfied the required characteristics of a good ceramic substrate as a multilayer wiring board on which electronic circuits such as conductors and resistors are formed in multiple layers.

【0020】次いで、このガラスフリットとチタン酸塩
としてSrTiO3を用い、それぞれ94wt%,6w
t%になるように秤量し、ボールミルにて粉砕、混合し
上記方法にてグリーンシートの焼成体を得た。この場合
の焼成温度は780℃であった。焼成したシートの各種
特性を測定したところ、体積固有抵抗率,誘電率,誘電
正接,絶縁破壊強度,曲げ強度等は、上記と同等の値を
得た。TCCは+50ppm/℃であった。
Next, using SrTiO3 as the glass frit and titanate, 94 wt% and 6 wt%, respectively.
The materials were weighed so as to be t%, ground and mixed in a ball mill, and a fired green sheet was obtained by the above method. The firing temperature in this case was 780°C. When various properties of the fired sheet were measured, values such as volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, and bending strength were found to be equivalent to those described above. TCC was +50 ppm/°C.

【0021】ガラスフリットとチタン酸塩としてCaT
iO3を用い、それぞれ70wt%,30wt%混合し
た組成物の場合は、焼成温度870℃にて、体積固有抵
抗率,誘電率,誘電正接,絶縁破壊強度,曲げ強度等は
、上記と同等の値を得た。TCCは−15ppm/℃で
あった。
CaT as glass frit and titanate
In the case of compositions using iO3 and mixed with 70 wt% and 30 wt%, respectively, the volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc. have the same values as above at a firing temperature of 870°C. I got it. TCC was -15 ppm/°C.

【0022】チタン酸塩としてSrCaTi2O6固溶
体を用いた場合は、SrCaTi2O6の混合量が60
wt%の時、焼成温度890℃で上記方法にてグリーン
シートの焼成体を得たところ、体積固有抵抗率,誘電率
,誘電正接,絶縁破壊強度,曲げ強度等は、上記と同等
の値を得た。TCCは−30ppm/℃であった。
[0022] When SrCaTi2O6 solid solution is used as the titanate, the amount of SrCaTi2O6 mixed is 60%.
When a green sheet fired body was obtained using the above method at a firing temperature of 890°C when Obtained. TCC was -30 ppm/°C.

【0023】その他、チタン酸塩としてMgTiO3,
BaTiO3、及びこれらチタン酸塩の固溶体を使用し
ても同様の結果を得た。
Other titanates include MgTiO3,
Similar results were obtained using BaTiO3 and solid solutions of these titanates.

【0024】さらに、Au,Ag,Ag−Pd,Cu等
のペーストを内部電極とし、積層した焼成体についても
同様の結果を得た。以上の結果を(表1)に示す。
Furthermore, similar results were obtained with laminated fired bodies using pastes of Au, Ag, Ag-Pd, Cu, etc. as internal electrodes. The above results are shown in (Table 1).

【0025】[0025]

【表1】[Table 1]

【0026】次に(表2)に示す本発明の組成範囲外で
焼成体を作り、各特性を調べた。その結果を(表2)に
示す。
Next, fired bodies were made outside the composition range of the present invention shown in Table 2, and their properties were investigated. The results are shown in (Table 2).

【0027】[0027]

【表2】[Table 2]

【0028】この(表1),(表2)から明らかなよう
に本発明の組成物は、従来不可能であった極めて低い温
度で焼成が実現でき、かつ、TCCの調整が容易に行な
えることがわかった。
As is clear from Tables 1 and 2, the composition of the present invention can be fired at an extremely low temperature, which was previously impossible, and the TCC can be easily adjusted. I understand.

【0029】[0029]

【発明の効果】以上のように本発明は、所定量のガラス
フリットとチタン酸塩との組成物からなり、チタン酸塩
としては、SrTiO3,CaTiO3,MgTiO3
,BaTiO3、又は、これらチタン酸塩の固溶体であ
り、前記ガラスフリットとしては、所定量のSiO2,
Al2O3,CaO+MgO,ZnO,TiO2,B2
O3,ZrO2の混合物からなるセラミック基板用組成
物とすることにより、従来不可能であった極めて低い温
度、すなわち750〜950℃で焼成が実現できるよう
になり、また、Au,Ag,Ag−Pd,Cu等のペー
ストを内部電極として使用することも可能となった。更
に焼成体の各種要求特性、すなわち、体積固有抵抗率,
誘電率,誘電正接,絶縁破壊強度,曲げ強度等、電子回
路を多層に形成する多層配線基板としての良好なセラミ
ック基板の特性を満足し、更に、TCCも±0ppm/
℃〜±100ppm/℃の範囲で容易に調整を行なうこ
とができ、かつ、低原価で量産が可能なセラミック基板
用組成物を実現できるものである。
As described above, the present invention comprises a composition of a predetermined amount of glass frit and a titanate, and the titanate includes SrTiO3, CaTiO3, MgTiO3.
, BaTiO3, or a solid solution of these titanates, and the glass frit includes a predetermined amount of SiO2,
Al2O3, CaO+MgO, ZnO, TiO2, B2
By creating a composition for ceramic substrates consisting of a mixture of O3 and ZrO2, it is now possible to perform firing at an extremely low temperature, that is, 750 to 950°C, which was previously impossible. It has also become possible to use pastes such as , Cu, etc. as internal electrodes. Furthermore, various required properties of the fired body, namely volume resistivity,
It satisfies the good characteristics of a ceramic substrate as a multilayer wiring board for forming electronic circuits in multiple layers, such as dielectric constant, dielectric loss tangent, dielectric breakdown strength, and bending strength, and also has a TCC of ±0 ppm/
It is possible to realize a ceramic substrate composition that can be easily adjusted in the range of .degree. C. to ±100 ppm/.degree. C. and that can be mass-produced at low cost.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】60〜95重量%のガラスフリットと40
〜5重量%のチタン酸塩と、からなることを特徴とする
セラミック基板用組成物。
Claim 1: 60-95% by weight glass frit and 40% by weight
A composition for a ceramic substrate, characterized in that it consists of ~5% by weight of a titanate.
【請求項2】前記チタン酸塩がSrTiO3,CaTi
O3,MgTiO3,BaTiO3、又は、これらチタ
ン酸塩の固溶体の1種以上からなることを特徴とする請
求項1記載のセラミック基板用組成物。
2. The titanate is SrTiO3, CaTi
2. The composition for a ceramic substrate according to claim 1, comprising one or more of O3, MgTiO3, BaTiO3, or a solid solution of these titanates.
【請求項3】前記ガラスフリットが、重量%でSiO2
が30〜40、Al2O3が10〜20、CaO+Mg
Oが5〜20、ZnOが5〜15、TiO2が10〜2
0、B2O3が0.5〜2、ZrO2が0.2〜1から
なることを特徴とする請求項1記載のセラミック基板用
組成物。
3. The glass frit comprises SiO2 in weight percent.
is 30-40, Al2O3 is 10-20, CaO+Mg
O is 5-20, ZnO is 5-15, TiO2 is 10-2
2. The composition for a ceramic substrate according to claim 1, characterized in that the content of ZrO2 is 0.0, B2O3 is 0.5 to 2, and ZrO2 is 0.2 to 1.
JP3049518A 1991-03-14 1991-03-14 Composition for ceramic board Pending JPH04286181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3049518A JPH04286181A (en) 1991-03-14 1991-03-14 Composition for ceramic board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3049518A JPH04286181A (en) 1991-03-14 1991-03-14 Composition for ceramic board

Publications (1)

Publication Number Publication Date
JPH04286181A true JPH04286181A (en) 1992-10-12

Family

ID=12833360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3049518A Pending JPH04286181A (en) 1991-03-14 1991-03-14 Composition for ceramic board

Country Status (1)

Country Link
JP (1) JPH04286181A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121174A (en) * 1996-09-26 2000-09-19 Ngk Spark Plug Co., Ltd. Dielectric material with low temperature coefficient and high quality

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121174A (en) * 1996-09-26 2000-09-19 Ngk Spark Plug Co., Ltd. Dielectric material with low temperature coefficient and high quality

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