JPS61242950A - Composition for ceramic substrate - Google Patents

Composition for ceramic substrate

Info

Publication number
JPS61242950A
JPS61242950A JP60079294A JP7929485A JPS61242950A JP S61242950 A JPS61242950 A JP S61242950A JP 60079294 A JP60079294 A JP 60079294A JP 7929485 A JP7929485 A JP 7929485A JP S61242950 A JPS61242950 A JP S61242950A
Authority
JP
Japan
Prior art keywords
composition
powder
weight
sheet
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60079294A
Other languages
Japanese (ja)
Other versions
JPH0686327B2 (en
Inventor
高畠 満夫
次郎 千葉
国分 可紀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP60079294A priority Critical patent/JPH0686327B2/en
Publication of JPS61242950A publication Critical patent/JPS61242950A/en
Publication of JPH0686327B2 publication Critical patent/JPH0686327B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Compositions Of Oxide Ceramics (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、抵抗、導体等の電子回路を多層に形成する多
層配線基板に好適なセラミック組成物に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a ceramic composition suitable for a multilayer wiring board on which electronic circuits such as resistors and conductors are formed in multiple layers.

「従来の榛藷」 回路を多層に形成する電子部品としては、アルミナ基板
7の如く予め焼結によって形成された基板上に回路、絶
縁層を交互に印刷しこれを焼成することによって製造す
る第1のタイプのものち、未焼結のセラミック基板に回
路を印刷し、互に回路が接触しないようこれを積層し、
ブレスした後焼結して製造する第2のタイプのものがあ
る。mlのタイプのものは、回路の影響によってその上
に形成する絶縁層に凹凸を生じ、それは上層程大きくな
る。この凹凸が大きくなるとこれに次の回路を印刷する
ことは難かしくなり、これが積層数の1つの律則となっ
ている0通常第1のタイプのものは5〜6層が限度とさ
れている。
``Conventional technology'' Electronic components with multilayer circuits are manufactured by alternately printing circuits and insulating layers on a substrate previously formed by sintering, such as the alumina substrate 7, and then firing them. After type 1, a circuit is printed on an unsintered ceramic substrate, and the circuits are stacked so that they do not touch each other.
There is a second type that is produced by pressing and then sintering. In the case of the ml type, unevenness occurs in the insulating layer formed thereon due to the influence of the circuit, and the unevenness becomes larger as the layer increases. As this unevenness increases, it becomes difficult to print the next circuit on it, and this is one of the rules for the number of laminated layers.Normally, the limit for the first type is 5 to 6 layers. .

これに対し、第2のタイプのものは1回路の印刷は常に
平面に近い状態の基板に対して行なうため第1のタイプ
のような律則はなく積層数の大きなものを製造すること
ができ、それだけ高密度の集積が行なえる。
On the other hand, in the second type, one circuit is always printed on a nearly flat substrate, so there are no rules like the first type, and it is possible to manufacture products with a large number of layers. , higher density integration can be achieved.

この第2のタイ−≠の基板に使用するセラミック組成物
としては、アルミナ粉末とIEiwt%以下のガラス粉
末を有機バインダーで固定したものがある。
As the ceramic composition used for this second tie≠ substrate, there is one in which alumina powder and glass powder of IEiwt% or less are fixed with an organic binder.

[発明の解決しようとする問題点] しかしながら、これら従来のものは、焼結温度が150
0℃〜1600℃と極めて高いので1回路を構成する材
料もか−る焼結温度で劣化しないW、No等の高価なも
のを使用しかつ還元雰囲気で焼成する必要があるので作
業性が劣った。
[Problems to be solved by the invention] However, in these conventional products, the sintering temperature is 150
Since the temperature is extremely high at 0°C to 1600°C, the materials constituting one circuit must be made of expensive materials such as W and No, which do not deteriorate at such sintering temperatures, and must be fired in a reducing atmosphere, resulting in poor workability. Ta.

本発明は、か−る第2のタイプの基板用セラミックの具
有する難点を解決するために研究した結果なされたもの
で、多層配線基板に好適な特に1000℃以下と極めて
低い温度で焼成できるセラミック組成物の提供を目的と
する。
The present invention was made as a result of research to solve the difficulties of the second type of ceramic for substrates. The purpose is to provide a composition.

[問題点を解決するための手段] 即ち1本発明は重量%表示でガラス粉末25〜65、ア
ルミナ粉末0〜80及びフォルステライト粉末5〜60
%からなり、該ガラス粉末は重量%表示で本質的にSi
O2 25〜TO,Al2O34〜15゜820325
〜45及び BaO0.5〜30からなるセラミック基
板用組成物である。
[Means for Solving the Problems] Namely, 1. The present invention uses glass powder of 25 to 65%, alumina powder of 0 to 80%, and forsterite powder of 5 to 60% by weight.
%, and the glass powder is essentially Si in weight %.
O2 25~TO, Al2O34~15°820325
-45 and BaO0.5-30.

本発明による組成物は、前述の如< tooo℃以下と
極めて低い温度・で焼結できるため、作業性が優れてい
る上1回路材料としても厚膜技術で広く使用されている
Au、 Ag−Pd、旧、 Cu等のペーストが適用で
きるため、それらの入手が容易になる。また焼結体は多
層配線基板として要求される次の物性を満足する。即ち
、曲げ強度が大きいこと、熱伝導率が良いこと、誘電率
が小さいこと、絶縁抵抗が大きいこと、回路材料を劣化
させないこと、耐湿性に優れること等である。
As mentioned above, the composition according to the present invention can be sintered at an extremely low temperature of less than 100°C, so it has excellent workability and can be used as a single circuit material as well as Au, Ag-, which is widely used in thick film technology. Pastes such as Pd, old, and Cu can be applied, making them easy to obtain. Furthermore, the sintered body satisfies the following physical properties required for a multilayer wiring board. That is, it has high bending strength, good thermal conductivity, low dielectric constant, high insulation resistance, does not deteriorate circuit materials, and has excellent moisture resistance.

本発明の組成物における限定理由は以下の通りである。The reasons for the limitations in the composition of the present invention are as follows.

ガラス粉末が25重量%より少ないと焼結温度が高くな
り、本発明の目的である低温度での焼結を行なうことが
難かしい、一方ガラス粉末が65重量%を越えると焼結
体の曲げ強度及び耐湿性が低下し好ましくない、ガラス
粉末は上記範囲中30〜50重量%の範囲がより望まじ
い。
If the glass powder content is less than 25% by weight, the sintering temperature will be high, making it difficult to perform sintering at a low temperature, which is the objective of the present invention.On the other hand, if the glass powder content exceeds 65% by weight, the sintered body will bend. It is more desirable for the glass powder to be in the range of 30 to 50% by weight within the above range, which is undesirable due to decreased strength and moisture resistance.

アルミナ粉末は必須成分ではないが添加することにより
、焼結体の熱伝導率が大きくなり多層配線基板としたと
きの放熱性がよくなると共に、誘電正接が小さくなるの
で高周波用には特に望ましい。
Although alumina powder is not an essential component, adding it increases the thermal conductivity of the sintered body, improving heat dissipation when used as a multilayer wiring board, and reducing the dielectric loss tangent, so it is particularly desirable for high frequencies.

しかしながら60%を越える添加は、焼結温度が高くな
り好ましくない、望ましくは上記範囲中10−50重量
%である。− フォルステライト粉末としては、Mg2SiO4を主成
分としこれと微量のFe25iOs との固溶体が通常
使用される勿論のこと純粋な)1g2Sj04を使用で
きる。フォルステライト粉末は、5重量%より少ないと
焼結体がモロくなると共に耐湿性が低下するので好まし
くなく、60重量%を越えると焼結温度が高くなり、好
ましくない、フォルステライトは上記範囲中5〜50%
の範囲がより望ましい。
However, addition of more than 60% is undesirable because the sintering temperature increases, and the preferred amount is 10 to 50% by weight within the above range. - As forsterite powder, 1g2Sj04, which is usually used as a solid solution containing Mg2SiO4 as a main component and a trace amount of Fe25iOs, can be used, as well as pure 1g2Sj04. If the amount of forsterite powder is less than 5% by weight, the sintered body will become loose and the moisture resistance will decrease, which is undesirable. If it exceeds 60% by weight, the sintering temperature will become high, which is not preferable. Forsterite is within the above range. 5-50%
is more desirable.

本発明における上記ガラスフリットとしては1M電率が
低く、曲げ強度耐湿性に優れた焼結体な形成する点で次
の組成を有するものが好ましい、即ち敬呈%と表示で SiO2     25〜65 AI2034〜15 8203     25〜45 Ran      0.5〜30 の組成を有するものである。この組成の限定理由は次の
とおりである。
The glass frit in the present invention preferably has the following composition in terms of forming a sintered body with a low 1M electrical conductivity and excellent bending strength and moisture resistance, that is, SiO2 25 to 65 AI2034 expressed as %. It has a composition of ~15820325~45Ran0.5~30. The reason for this composition limitation is as follows.

SiO2が25%より少ないと焼結体の誘電率が大きく
なり過ぎ、65%を越えると焼結温度が高くなり過ぎい
ずれも好ましくない、より望ましくは35〜50%の範
囲である。
If the SiO2 content is less than 25%, the dielectric constant of the sintered body becomes too high, and if it exceeds 65%, the sintering temperature becomes too high, both of which are undesirable.More preferably, it is in the range of 35 to 50%.

Al2O3は4%より少ないと焼結体の耐湿性が劣り、
15%を越えるとガラスフリフト製造時に失透を生ずる
恐れがありいずれも好ましくない、より望ましくは5〜
13%の範囲である。
If Al2O3 is less than 4%, the moisture resistance of the sintered body will be poor;
If it exceeds 15%, devitrification may occur during the manufacture of glass lift, which is not preferable, and more preferably 5 to 5%.
The range is 13%.

B2O3はフラックスであり、25%より少ないと焼結
温度が高くなり過ぎ、45%を越えるとガラスが化学的
安定性が低下し好ましくない、より望ましくは30〜4
0%の範囲である。
B2O3 is a flux, and if it is less than 25%, the sintering temperature will become too high, and if it exceeds 45%, the chemical stability of the glass will decrease, which is not preferable, and more preferably 30 to 4
The range is 0%.

BaOは、氷見スフリット製造時の溶融性を向上する作
用がある。0.5%より少ないとその効果が少なく、3
0%を越えると焼結体の誘電率が大きくなり過ぎる。望
ましくは5〜25%の範囲である。
BaO has the effect of improving the meltability during the production of Himi sfrito. If it is less than 0.5%, the effect is small;
If it exceeds 0%, the dielectric constant of the sintered body becomes too large. It is preferably in the range of 5 to 25%.

本発明によるガラス粉末は以上の成分の他に次の成分を
添加するとガラス粉末の製造における溶融性を向上する
ことができるので好ましい、しかしながら、か覧る成分
が多過ぎると誘電率が多くなり過ぎ高周波領域の伝播損
失が大きくなるので、各成分の添加量は次のようにする
のが望ましい、即ち、Na2O+ K2O+ Li2O
< 1重着%、 ZnO+CaO+NgO+SrO<5
重量%である。
It is preferable to add the following components to the glass powder according to the present invention in addition to the above-mentioned components, since this can improve the meltability in the manufacture of the glass powder. However, if the above components are too large, the dielectric constant becomes too high. Since the propagation loss in the high frequency region increases, it is desirable to add the following amounts of each component: Na2O + K2O + Li2O
<1%, ZnO+CaO+NgO+SrO<5
Weight%.

本発明においてガラス等の各粉末の粒径は特に限定され
ず0.5〜5μ程度のものが使用される。
In the present invention, the particle size of each powder such as glass is not particularly limited, and a particle size of about 0.5 to 5 μm is used.

本発明の組成物は、各粉末が上記割合にて混合されてい
るものであるが、それを使用した多層配線基板は例えば
次のようにして製造される。
The composition of the present invention is one in which each powder is mixed in the above proportions, and a multilayer wiring board using the composition is manufactured, for example, as follows.

本発明の組成物に有機バインダー、可塑剤溶剤を添加し
混練してペーストを生成する。この有機バインダーとし
ては、ポリビニールブチラール、可塑剤としてはフタル
酸ジオクチル、ポリエチレングリコール、溶剤としては
トルエン、アルコール等いずれも常用されているものが
使用できる。
An organic binder and a plasticizer solvent are added to the composition of the present invention and kneaded to form a paste. As the organic binder, polyvinyl butyral, as the plasticizer, dioctyl phthalate or polyethylene glycol, as the solvent, toluene, alcohol, etc., which are all commonly used, can be used.

次いでこのペーストをシートに成形し、更に60〜80
℃程度の温度で乾燥することにより未焼結のシート、い
わゆるグリーンシートが形成される1次いで、このグリ
ーンシートの片面に厚膜法により所定の回路を印刷した
後、積層する0次いでこれをプレスして一体とした後、
焼成し、グリーンシート及び回路を焼結する。かくして
製造されたものは、回路が絶縁基板を介して多層に積層
されたものとなる。
Next, this paste is formed into a sheet and further 60 to 80
An unsintered sheet, a so-called green sheet, is formed by drying at a temperature of about °C.Next, a predetermined circuit is printed on one side of this green sheet by the thick film method, and then it is laminated.Next, this is pressed. After combining the
Fire and sinter the green sheet and circuit. The product manufactured in this manner has circuits laminated in multiple layers with an insulating substrate interposed therebetween.

[実施例] 表1の上段に示される崩、1〜20のガラス粉末を常法
により製造した0次いで同表の下段に示される種類と量
のフィラーと上路Jラス粉末を混合し組成物を得た。な
お、各試料中ガラス粉末の量はフィラーの残部である。
[Example] A composition was prepared by mixing glass powders shown in the upper row of Table 1 and glass powders 1 to 20 produced by a conventional method, and then mixing fillers of the type and amount shown in the lower row of the same table with Kamiji J glass powder. Obtained. Note that the amount of glass powder in each sample is the remainder of the filler.

また、陽、17〜20は比較例である。Moreover, positive numbers 17 to 20 are comparative examples.

次いでこれに有機バインダーとしてポリビニールブチラ
ール、可塑剤としてフタル酸ジオクチル及びポリエチレ
ングリコール並びに溶剤としてトルエン及びアルコール
を添加し混練して粘度10000〜30000 cp 
sのペーストを作成した0次いでこのペーストを約0.
5ms厚のシートにした後80〜80℃で約2時間乾燥
した0次いでこのシートを300℃/hrの速度で昇温
し最終的には表2に記載の焼成温度で1時間焼成し焼結
シートをInした。この焼結シートについて誘電率、誘
電正接、熱膨張率、耐湿性を測定しその結果を表2に示
した。尚同表の耐湿性の0印は100℃の湯に2時間浸
漬した際の重量減少が1%未満のもので、X印はその重
量減少が1%以上あったものを示す。
Next, polyvinyl butyral as an organic binder, dioctyl phthalate and polyethylene glycol as plasticizers, and toluene and alcohol as solvents were added and kneaded to give a viscosity of 10,000 to 30,000 cp.
I made a paste of 0.s and then added this paste to about 0.
After forming a sheet with a thickness of 5 ms, it was dried at 80 to 80°C for about 2 hours.The sheet was then heated at a rate of 300°C/hr and finally fired for 1 hour at the firing temperature listed in Table 2 for sintering. The sheet was inserted. The dielectric constant, dielectric loss tangent, coefficient of thermal expansion, and moisture resistance of this sintered sheet were measured, and the results are shown in Table 2. In the same table, the mark 0 for moisture resistance indicates that the weight loss was less than 1% when immersed in hot water at 100°C for 2 hours, and the mark X indicates that the weight loss was 1% or more.

なお、No、18.19についてはグリーンシートを焼
成する粉末状になり焼結シートが得られなかったので物
性値は測定していない。
In addition, for No. 18.19, the physical properties were not measured because the green sheet became powdery and a sintered sheet could not be obtained.

表2に記載の曲げ強度は次のようにして測定した10ケ
の試料の平均値である。
The bending strengths listed in Table 2 are the average values of 10 samples measured as follows.

焼結シートをrl W 10鵬腸、長さ50m朧に切断
し、これを一定距離L40■層に配置した。2支点上に
載置、支点間の1点に0.5mm/分の速度で荷重を加
え破損したときの荷重Pを求めた。これらの値から曲げ
σを次式により計算した。
The sintered sheet was cut into pieces with a length of 10 mm and a length of 50 m, which were arranged in layers at a constant distance of L40. It was placed on two fulcrums, and a load was applied to one point between the fulcrums at a rate of 0.5 mm/min to determine the load P at which it broke. From these values, bending σ was calculated using the following formula.

PL σ=□(tはシートの厚さ) 2wt 表2より明らかなように、本発明による組成物は100
0℃以下で焼成することができ、焼成したシートは耐湿
性に優れる。また、強度誘電率、S膨張率も多層回路基
板として充分使用できる特性を有する。
PL σ=□ (t is the thickness of the sheet) 2wt As is clear from Table 2, the composition according to the present invention has a
It can be fired at temperatures below 0°C, and the fired sheet has excellent moisture resistance. In addition, the strength dielectric constant and S expansion coefficient have characteristics that can be used as a multilayer circuit board.

[発明の効果] 本発明によれば、低温度で焼成することができ焼成した
基板は耐湿性が優れているので多層回路素子を製造した
場合、特性の経時変化の少な6x−子が得られると予想
される。また、曲げ強度等の電気特性も多層回路基板と
して充分使用できるものである。
[Effects of the Invention] According to the present invention, the substrate can be fired at a low temperature and the fired substrate has excellent moisture resistance, so when manufacturing a multilayer circuit element, a 6x-element with little change in characteristics over time can be obtained. It is expected to be. Furthermore, the electrical properties such as bending strength are sufficient for use as a multilayer circuit board.

Claims (2)

【特許請求の範囲】[Claims] (1)重量%表示でガラス粉末25〜65、アルミナ粉
末0〜60及びフォルステライト粉末5〜60%からな
り、該ガラス粉末は重量%表示で本質的にSiO_22
5〜70、Al_2O_34〜15、B_2O_325
〜45及びBaO0.5〜30からなるセラミック基板
用組成物。
(1) Consisting of 25-65% glass powder, 0-60% alumina powder and 5-60% forsterite powder in weight%, the glass powder is essentially SiO_22 in weight%
5-70, Al_2O_34-15, B_2O_325
-45 and BaO0.5-30.
(2)前記ガラス粉末は重量%表示で本質的にSiO_
230〜50、Al_2O_35〜13、B_2O_3
30〜40及びBaO5〜25からなる特許請求の範囲
第1項記載の組成物。
(2) The glass powder is essentially SiO_ in weight percent.
230-50, Al_2O_35-13, B_2O_3
30-40 and BaO5-25.
JP60079294A 1985-04-16 1985-04-16 Ceramic substrate composition Expired - Lifetime JPH0686327B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60079294A JPH0686327B2 (en) 1985-04-16 1985-04-16 Ceramic substrate composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60079294A JPH0686327B2 (en) 1985-04-16 1985-04-16 Ceramic substrate composition

Publications (2)

Publication Number Publication Date
JPS61242950A true JPS61242950A (en) 1986-10-29
JPH0686327B2 JPH0686327B2 (en) 1994-11-02

Family

ID=13685827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60079294A Expired - Lifetime JPH0686327B2 (en) 1985-04-16 1985-04-16 Ceramic substrate composition

Country Status (1)

Country Link
JP (1) JPH0686327B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159949A (en) * 1989-11-14 1991-07-09 Nippon Shokubai Kagaku Kogyo Co Ltd Ceramic form and production thereof
JP2002104870A (en) * 2000-09-28 2002-04-10 Kyocera Corp Dielectric porcelain and laminate
WO2009014092A1 (en) 2007-07-23 2009-01-29 Tdk Corporation Ceramic substrate, process for producing the same, and dielectric-porcelain composition
JP2009227483A (en) * 2008-03-19 2009-10-08 Tdk Corp Dielectric ceramic composition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103206A (en) * 1980-12-19 1982-06-26 Tdk Electronics Co Ltd Dielectric material
JPS6011259A (en) * 1983-06-28 1985-01-21 株式会社村田製作所 Ceramic composition
JPS6021855A (en) * 1983-07-11 1985-02-04 株式会社村田製作所 Low temperature sintering ceramic composition

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JPS57103206A (en) * 1980-12-19 1982-06-26 Tdk Electronics Co Ltd Dielectric material
JPS6011259A (en) * 1983-06-28 1985-01-21 株式会社村田製作所 Ceramic composition
JPS6021855A (en) * 1983-07-11 1985-02-04 株式会社村田製作所 Low temperature sintering ceramic composition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159949A (en) * 1989-11-14 1991-07-09 Nippon Shokubai Kagaku Kogyo Co Ltd Ceramic form and production thereof
JP2002104870A (en) * 2000-09-28 2002-04-10 Kyocera Corp Dielectric porcelain and laminate
JP4535592B2 (en) * 2000-09-28 2010-09-01 京セラ株式会社 Laminated body
WO2009014092A1 (en) 2007-07-23 2009-01-29 Tdk Corporation Ceramic substrate, process for producing the same, and dielectric-porcelain composition
US8168555B2 (en) 2007-07-23 2012-05-01 Tdk Corporation Ceramic substrate, process for producing the same, and dielectric-porcelain composition
JP2009227483A (en) * 2008-03-19 2009-10-08 Tdk Corp Dielectric ceramic composition

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