JPS6021855A - Low temperature sintering ceramic composition - Google Patents

Low temperature sintering ceramic composition

Info

Publication number
JPS6021855A
JPS6021855A JP12643183A JP12643183A JPS6021855A JP S6021855 A JPS6021855 A JP S6021855A JP 12643183 A JP12643183 A JP 12643183A JP 12643183 A JP12643183 A JP 12643183A JP S6021855 A JPS6021855 A JP S6021855A
Authority
JP
Japan
Prior art keywords
low temperature
ceramic composition
temperature sintering
sintering ceramic
alumina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12643183A
Other languages
Japanese (ja)
Other versions
JPH0372593B2 (en
Inventor
公英 須郷
闊 瀬野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP12643183A priority Critical patent/JPS6021855A/en
Publication of JPS6021855A publication Critical patent/JPS6021855A/en
Publication of JPH0372593B2 publication Critical patent/JPH0372593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions

Landscapes

  • Compositions Of Oxide Ceramics (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 この発明はフォルステライトを主成分とした低温焼結が
可能な磁器組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a porcelain composition containing forsterite as a main component and capable of being sintered at low temperatures.

たとえばIC基板にはセラミクスが用いられ・Cきたが
、小型化に伴つ゛〔多層基板による高密度化や低廉化が
要求され′Cいる。
For example, ceramics have been used for IC substrates, but with miniaturization there is a need for higher density and lower cost through multilayer substrates.

従来、工C多層基板用のセラミクスとし°Cはアルミナ
、結晶化ガラス−無機物系などが用いられ“〔いた。こ
のうちアルミナ多層基板は次のようにし′C製造され゛
〔いた。つまシ、アルミノ−92〜97重is、Cio
−MgO−810,系などのガラス残部からなる混合粉
末に有機バインダ、溶剤などを加え°〔泥漿とし、ドク
ターブレード法などによってセラミックグリーンシート
に成形し、このシート上にタングステン、モリプデXあ
るいはモリブデン−マンガンなどのペーストで所望の回
路導体)(ター/を形成し、次いでシートを積み重ねて
熱圧着し、これを加湿水素−窒素混合ガス、あるいはア
ンモニア分解ガスの雰囲気中におい°(1600〜17
00℃で焼成し°Cいた。
Conventionally, alumina, crystallized glass-inorganic materials, etc. have been used as ceramics for engineered multilayer substrates. Among these, alumina multilayer substrates have been manufactured as follows. Alumino-92~97 heavy is, Cio
Add an organic binder, a solvent, etc. to a mixed powder consisting of glass residues such as MgO-810, etc. to form a slurry, form it into a ceramic green sheet by a doctor blade method, and apply tungsten, molybdenum A desired circuit conductor (tar/) is formed using a paste such as manganese, then the sheets are stacked and bonded by thermocompression, and this is placed in an atmosphere of humidified hydrogen-nitrogen mixed gas or ammonia decomposition gas (1600 to 17
It was fired at 00°C.

このようにアルミナ多層基板はアルミナを主成分とする
ため高温焼成が必要であり、また内部の回路導体パター
ンの材料とし′C1融点の高いタングステン、モリブデ
ンなどを用いCいる。このため、焼成コストが高くなる
こと、アルミナの誘電率が10程度あるだめ信号伝播遅
延や雑音が発生すること、タングステン、モリブデンな
どは導体抵抗が高く、抵抗を下げるには導体幅を広くし
なければならないが、これは高密度化と逆行し高速度化
を制限すること、などの問題を有しCいる。
As described above, since the alumina multilayer substrate has alumina as its main component, high temperature firing is required, and tungsten, molybdenum, or the like having a high melting point is used as the material for the internal circuit conductor pattern. For this reason, the firing cost increases, the dielectric constant of alumina is around 10, which causes signal propagation delay and noise, and tungsten, molybdenum, etc. have high conductor resistance, and to lower the resistance, the conductor width must be widened. However, this has the problem of going against the grain density and limiting the speed.

また、結晶化ガラス−無機物系の多層基板は、結晶化ガ
ラスとし′Cはたとえばホウケイ酸鉛系が用いられ、無
機物系とし・〔はアルミナが用いられ、これら各原料を
含むセラミックグリーンシート上にAu、 AQ、 A
g−P(1,Ptなどノペーストテ所fi17)回路導
体パターンを形成し、これを積み重ね゛C熱圧着し、こ
れを大気中800〜900Cで焼成しCいた。
In addition, for the crystallized glass-inorganic multilayer substrate, for example, lead borosilicate is used as the crystallized glass, and alumina is used as the inorganic material. Au, AQ, A
A g-P (1, Pt, etc. paste type fi17) circuit conductor pattern was formed, stacked and thermocompression bonded, and then fired at 800 to 900 C in the atmosphere.

仁の種の多層基板は大気中800〜900tで焼成でき
るため、焼成コストを押えることができるが、素原料の
結晶化ガラスが全体の約50重t%を占め、しかも材料
そのもののコストが高いため高価なものとな、す、誘電
損失が0.5チと大きい値を示すという間頌を有しCい
るっ したがつ“C1この発明は低温焼結が可能で、多層化、
低廉化が実現できる磁器組成物を提供することを目的と
するう すなわち、この発明の要旨とするところは、7オルステ
ライ) (2M90・sio、)を主成分とし、これに
酸化ホウ素が11.5〜7.0重醍チ添加含有され゛〔
なる低温焼結磁器組成物である。
The multilayer substrate of the jinotane can be fired in the atmosphere at 800 to 900 tons, which can reduce the firing cost, but the raw material, crystallized glass, accounts for about 50% by weight of the whole, and the cost of the material itself is high. However, the dielectric loss is as large as 0.5 inches, which makes it expensive.
The purpose of the present invention is to provide a porcelain composition that can be produced at low cost. Contains ~7.0 heavy duty additives゛〔
This is a low-temperature sintered porcelain composition.

この発明にかかる磁器組成物によれば1200t’以下
での焼結が可能となり、内部の回路導体パターンの材料
とし°〔たとえばAq−Pdが使用でき、材料コスト、
製造コストの低廉化実現が可能になるとともに、もちろ
ん多層化が行えることになる。
According to the porcelain composition according to the present invention, it is possible to sinter at 1200 t' or less, and it is possible to use Aq-Pd as the material for the internal circuit conductor pattern.
Not only can manufacturing costs be reduced, but also multi-layering can be achieved.

この発明におL*’C、フォルスプライト(2iA90
・Sin、)に酸化ホウ素を1.5〜10重歇チ添加含
有させ゛〔いるが、1化ホウ素の添加範囲を限定したの
は次のような理由による。つまり、1.5重量係未満で
ヅよフォルステライトの焼結温度である1+00tを′
こなシ、回路導体パターンにA(1−Paなどの低融点
のものが使えなくなる。またZO重シチを越えると、低
温焼結はdT能であるが、誘電損失が0.10%以上と
悪くなる。
L*'C to this invention, false sprite (2iA90
・Sin, ) is added with boron oxide in an amount of 1.5 to 10 times, but the range of addition of boron monoxide is limited for the following reasons. In other words, the sintering temperature of zuyoforsterite, which is 1+00t, is less than 1.5% by weight.
In this case, low melting point materials such as A (1-Pa) cannot be used for the circuit conductor pattern.Also, if the ZO weight is exceeded, low temperature sintering has dT capability, but the dielectric loss is 0.10% or more. Deteriorate.

以下、この発明を実施例にもとづい”C詳、刑に説明す
る。
This invention will be explained in detail below based on examples.

素原料とし′乙 2Mg0.f9i0.、B、Cを準1
稍し、これを第1表に示す組成比率の磁器が得られるよ
うに調合し、ボットミルで24時時間式混合した脱水乾
燥硯、800t4.950C7)各温度で2時間仮焼し
た。仮焼物を粉砕し、酢酸ビニルエマルジョンを約51
敬チ加え゛Cボットミルで24時間混合した。混合した
のち造粒し、約1000jLy/dの圧力で加圧成形し
、異なる仮焼温度で処理された成形物を第1表に示す焼
成温度で2時間焼結した。
As raw material 2Mg0. f9i0. , B, C as semi-1
However, this was mixed so as to obtain porcelain having the composition ratio shown in Table 1, and was mixed 24 hours a day in a bot mill, dehydrated and dried, and calcined for 2 hours at each temperature. Crush the calcined material and make a vinyl acetate emulsion of about 51%
The mixture was carefully added and mixed for 24 hours in a C bot mill. After mixing, the mixture was granulated, pressure molded at a pressure of about 1000 jLy/d, and the molded products treated at different calcination temperatures were sintered for 2 hours at the calcination temperatures shown in Table 1.

得られた焼結体は直径141ψ、厚不1明であシ、両面
に1極を形成し′にれを試料とした。そし′C各試料に
つき、誘電率(ε)、誘電損失(tanδ)および比抵
抗ψ)を測定し、その結果を第1表に合りセ°C示LI
c、 ε、 tanδは1MHzで、li定した。
The obtained sintered body had a diameter of 141 ψ, a thickness of 1 mm, and a single pole was formed on both sides, and the sintered body was used as a sample. The dielectric constant (ε), dielectric loss (tan δ), and specific resistance ψ) of each sample were measured, and the results were shown in Table 1.
c, ε, and tanδ were determined at 1 MHz.

なお、表中金印は仁の発明範囲外であり、それ以外は発
明範囲内である。
The gold seal in the front is outside the scope of Jin's invention, and the rest are within the scope of the invention.

第1表から明らかなように、この発明にかかるものは1
2001:以丁の低温焼帖が可能であり、εはアルミナ
系のものより小さく、tanδは0.09%以下、ρも
〉10のものが得られ“〔いる。したがつ゛C1回路導
体パターンの材料としC1g−pa系が使用でき、上記
した実施例から多層基板の製造が可能であることが明ら
かである。
As is clear from Table 1, the invention relates to 1
2001: Low-temperature firing of the material is possible, ε is smaller than that of alumina-based materials, tan δ is less than 0.09%, and ρ is >10.However, C1 circuit conductor pattern It is clear that C1g-pa system can be used as the material, and it is possible to manufacture a multilayer board from the above-mentioned examples.

また上記した実施例において、添加物とし“CBaCを
使用したがこれは次のような理由による。
Furthermore, in the above embodiments, "CBaC" was used as an additive for the following reasons.

つまシ、B4Cそのものは水分を吸収せず、水に対し゛
C安定であるため、主成分のフォルステライトと湿式混
合し゛〔も添加物量のバラツキが発生せ尤調合どうりの
磁器が得られるからである。この64cは仮焼段階の6
001:付近でB!O−に変化し、最終生成物中にはB
、Osとし゛〔存在することになる。またBNも添加物
とし”C使用できる。
However, since B4C itself does not absorb water and is stable in water, even if it is wet mixed with forsterite, the main component, there will be variations in the amount of additives, and the porcelain will be obtained exactly as it is mixed. It is. This 64c is 6 at the calcination stage.
001: B nearby! changes to O-, and B is present in the final product.
, Os. BN can also be used as an additive.

なお、添加物の原料とし゛CB雪Osを用いたとき、B
、 Osがもともと水溶性であるため、水を使わない処
理工程を設定させなければならず、たとえば湿式混合し
たのち蒸発乾燥するなど特別な処理が必要となることを
付記しCおく。
In addition, when using CB Yuki Os as a raw material for additives, B
It should be noted that since Os is originally water-soluble, a treatment process that does not use water must be set up, and special treatment such as wet mixing followed by evaporation drying is required.

特許出願人 株式会社 村田製作所patent applicant Murata Manufacturing Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 7オルステライ) (2MfO・SiO,)を主成分と
し、これに酸化ホウ素が1.5〜7.0Jtt%添加含
有されCなる低温焼結磁器組成物。
A low-temperature sintered porcelain composition containing (2MfO.SiO,) as a main component and 1.5 to 7.0 Jtt% of boron oxide added thereto.
JP12643183A 1983-07-11 1983-07-11 Low temperature sintering ceramic composition Granted JPS6021855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12643183A JPS6021855A (en) 1983-07-11 1983-07-11 Low temperature sintering ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12643183A JPS6021855A (en) 1983-07-11 1983-07-11 Low temperature sintering ceramic composition

Publications (2)

Publication Number Publication Date
JPS6021855A true JPS6021855A (en) 1985-02-04
JPH0372593B2 JPH0372593B2 (en) 1991-11-19

Family

ID=14935019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12643183A Granted JPS6021855A (en) 1983-07-11 1983-07-11 Low temperature sintering ceramic composition

Country Status (1)

Country Link
JP (1) JPS6021855A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242950A (en) * 1985-04-16 1986-10-29 旭硝子株式会社 Composition for ceramic substrate
CN114685152A (en) * 2020-12-28 2022-07-01 山东国瓷功能材料股份有限公司 Low-temperature co-fired ceramic material for millimeter wave antenna module and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160953A (en) * 1981-03-25 1982-10-04 Nippon Electric Co High dielectric constant ceramic composition
JPS5860666A (en) * 1981-10-06 1983-04-11 旭硝子株式会社 Fine fused quartz sintered body

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160953A (en) * 1981-03-25 1982-10-04 Nippon Electric Co High dielectric constant ceramic composition
JPS5860666A (en) * 1981-10-06 1983-04-11 旭硝子株式会社 Fine fused quartz sintered body

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242950A (en) * 1985-04-16 1986-10-29 旭硝子株式会社 Composition for ceramic substrate
CN114685152A (en) * 2020-12-28 2022-07-01 山东国瓷功能材料股份有限公司 Low-temperature co-fired ceramic material for millimeter wave antenna module and preparation method thereof
CN114685152B (en) * 2020-12-28 2022-11-04 山东国瓷功能材料股份有限公司 Low-temperature co-fired ceramic material for millimeter wave antenna module and preparation method thereof

Also Published As

Publication number Publication date
JPH0372593B2 (en) 1991-11-19

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