JPH0576780B2 - - Google Patents
Info
- Publication number
- JPH0576780B2 JPH0576780B2 JP59021621A JP2162184A JPH0576780B2 JP H0576780 B2 JPH0576780 B2 JP H0576780B2 JP 59021621 A JP59021621 A JP 59021621A JP 2162184 A JP2162184 A JP 2162184A JP H0576780 B2 JPH0576780 B2 JP H0576780B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- signal
- zero point
- ccd
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 11
- 238000005286 illumination Methods 0.000 description 8
- 238000001444 catalytic combustion detection Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 230000004069 differentiation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は微細パターンの検出方法に関し、特に
半導体ウエーハ上に形成した微細パターン幅を高
精度に検出することができる微細パターン検出方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for detecting a fine pattern, and particularly to a method for detecting a fine pattern that can detect the width of a fine pattern formed on a semiconductor wafer with high precision.
半導体製造技術ではホトマスク或いは半導体ウ
エーハ上に形成されたパターン、特にパターン幅
寸法を測定して製造工程や品質を管理する必要が
ある。そのため、この測定は顕微鏡を用いた人間
の眼に頼ることが考えられるが、個人誤差や再現
性に問題があり、また作業者の疲労を招くという
問題もある。このため、通常の光やレーザ光を利
用した測定装置が開発され前述した問題の解消を
図つている。例えば一の装置として、パターン上
に対して光を走査しながら照射させるのと同時に
その反射光強度を測定し、これによりパターンエ
ツジ部における特異な反射状態からパターンエツ
ジ位置を検出しかつパターン幅を算出する方式が
考えられる。また、他の装置として、パターンを
照明してパターン像をCCD等の光素子上に結像
させ、CCDの出力の変化からパターンエツジを
検出しかつパターン幅を算出する方法が考えられ
る。
In semiconductor manufacturing technology, it is necessary to control the manufacturing process and quality by measuring patterns formed on photomasks or semiconductor wafers, especially the pattern width dimensions. Therefore, it is conceivable to rely on the human eye using a microscope for this measurement, but there are problems with individual errors and reproducibility, and there is also the problem of causing worker fatigue. For this reason, measurement devices using ordinary light or laser light have been developed to solve the above-mentioned problems. For example, one device scans and irradiates light onto a pattern and simultaneously measures the intensity of the reflected light, thereby detecting the pattern edge position from the unique reflection state at the pattern edge and determining the pattern width. One possible method is to calculate it. Another possible method is to illuminate a pattern, form a pattern image on an optical element such as a CCD, detect pattern edges from changes in the output of the CCD, and calculate the pattern width.
ところで、前述した各方式においては光学的手
段に相違はあるものの、パターンエツジの検出に
際しては検出した電気信号を所定の方式に従つて
信号処理する点では同じである。例えば、第１図
に示す信号が得られた場合に、この信号波形から
パターンエツジ１，１を検出（算出）することに
なる。 Incidentally, although there are differences in optical means among the above-mentioned methods, they are the same in that the detected electrical signals are processed in accordance with a predetermined method when detecting pattern edges. For example, when the signal shown in FIG. 1 is obtained, pattern edges 1, 1 are detected (calculated) from this signal waveform.
この信号処理に際しては、従来種々の方式が使
用されており、一つには第２図Ａのように信号を
ソフトウエア処理して波形を直線化し、これと適
宜設定したしきい値との交点P1〜P4の平均から
パターンエツジを求める方式がある。また、同図
Ｂのように信号を微分した上で大、小のしきい値
との交点P5〜P8を求め、この交点の平均から求
める方式もある。 Conventionally, various methods have been used for this signal processing. One method, as shown in Figure 2 A, is to process the signal with software to linearize the waveform, and then calculate the intersection of this with an appropriately set threshold value. There is a method of finding the pattern edge from the average of P1 to P4 . There is also a method of differentiating the signal, finding the intersections P5 to P8 with the large and small thresholds, and finding the average of these intersections, as shown in FIG.
しかしながら、これらのいずれの方式も信号と
しきい値との交点を利用しているものであるため
に、しきい値の設定が適切でないと検出精度が低
下し或いは検出が不能になるおそれがある。ま
た、しきい値が変動すると検出値も変動され、検
出の再現精度も悪くなる。このため、しきい値の
設定、変動防止等の対策も必要となり、測定装置
を複雑化するという問題もある。 However, since each of these methods utilizes the intersection of a signal and a threshold value, if the threshold value is not set appropriately, there is a risk that detection accuracy may decrease or detection may become impossible. Further, when the threshold value changes, the detected value also changes, and the reproducibility of detection also deteriorates. Therefore, measures such as setting a threshold value and preventing fluctuations are required, which poses the problem of complicating the measuring device.
本発明の目的はパターンエツジの検出を正確に
かつ高精度に行ない、これによりパターン幅寸
法、パターンスペース寸法等を微細に算出するこ
とができ、かつ装置の複雑化を生じることのない
微細パターンの検出技術を提供することにある。
An object of the present invention is to detect pattern edges accurately and with high precision, thereby making it possible to precisely calculate pattern width dimensions, pattern space dimensions, etc., and to detect fine patterns without complicating the device. The purpose is to provide detection technology.
本発明の前記ならびにそのほかの目的と新規な
特徴は、本明細書の記述および添付図面からあき
らかになるであろう。 The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なも
のの概要を簡単に説明すれば、下記のとおりであ
る。
A brief overview of typical inventions disclosed in this application is as follows.
すなわち、パターンの光学プロフイルから求め
られたレベル信号からその二階微分信号を算出
し、かつこの二階微分信号の零点位置を求めるこ
とによりパターンエツジを検出するものであり、
これによりしきい値の設定を不要にしてしきい値
に係わる前述の不具合を全て解消するものであ
る。 That is, the pattern edge is detected by calculating the second-order differential signal from the level signal obtained from the optical profile of the pattern and finding the zero point position of this second-order differential signal.
This eliminates the need to set a threshold value and eliminates all of the above-mentioned problems related to the threshold value.
第３図は本発明方法を実施するためのパターン
検出装置を示しており、先ずこの装置について説
明し、次にその作用と共に本発明方法を説明す
る。同図において、被検出パターンを有する半導
体ウエーハ１０は、上下配置されたXYテーブル
１２、Ｚテーブル１３、θテーブル１４からなる
可動テーブル１１上に搭載され図外の各テーブル
駆動部によつてＸ，Ｙ，Ｚ，θ方向に移動され
る。前記可動テーブル１１の一側にはミラー１５
を付設したレーザ測長器１６を配設し、各テーブ
ル位置を測定する。
FIG. 3 shows a pattern detection apparatus for carrying out the method of the present invention. First, this apparatus will be explained, and then the method of the present invention will be explained together with its operation. In the figure, a semiconductor wafer 10 having a pattern to be detected is mounted on a movable table 11 consisting of an XY table 12, a Z table 13, and a θ table 14 arranged vertically. It is moved in the Y, Z, and θ directions. A mirror 15 is provided on one side of the movable table 11.
A laser length measuring device 16 is installed to measure each table position.
前記ウエーハ１０の直上位置には、ウエーハ１
０上のパターンの光学プロフアイルに基づいてレ
ベル電気信号を得るパターン検出部１７が設けら
れる。このパターン検出部１７はウエーハ１０に
対向する位置に高NA（開口数）の対物レンズ１
８を配置する一方その光軸上には下から上に向か
つてハーフミラー１９、リレーレンズ２０、ハー
フミラー２１，２２を直列配置する。前記ハーフ
ミラー１９には更にハーフミラー２３を並設し、
このハーフミラー２３に対して側方に焦点用照明
系２４を、上方にパターン照明系２５を配置す
る。焦点用照明系２４はランプ２６、赤外線透過
フイルタ２７、スリツト２８からなり、またパタ
ーン照明系２５はランプ２９と赤外線カツトフイ
ルタ３０を有する。また、前記ハーフミラー２１
にはモニタ用TVカメラ３１を対向配置する。 A wafer 1 is placed directly above the wafer 10.
A pattern detection section 17 is provided which obtains a level electrical signal based on the optical profile of the pattern on the top. This pattern detection unit 17 has an objective lens 1 with a high NA (numerical aperture) located at a position facing the wafer 10.
A half mirror 19, a relay lens 20, and half mirrors 21 and 22 are arranged in series on the optical axis from bottom to top. A half mirror 23 is further arranged in parallel with the half mirror 19,
A focusing illumination system 24 is disposed on the side of this half mirror 23, and a pattern illumination system 25 is disposed above it. The focal illumination system 24 includes a lamp 26, an infrared transmission filter 27, and a slit 28, and the pattern illumination system 25 has a lamp 29 and an infrared cut filter 30. Further, the half mirror 21
A monitor TV camera 31 is disposed opposite to each other.
更に前記ハーフミラー２２にはハーフミラー３
２と３個のCCD３３，３４，３５を有する焦
点・寸法検出系３６を配設している。これら３個
のCCD３３，３４，３５は前記対物レンズ１８
とリレーレンズ２０によつてウエーハ１０上のパ
ターンがその表面に結像され、CCD３３と３４
はそれぞれＸ方向、Ｙ方向のパターンエツジを検
出し、CCD３５はパターンの焦点を検出する。
そして、これらCCD３３，３４，３５は制御系
３７に接続される。制御系３７は一階微分を行な
う第１演算回路３８と、この第１演算回路３８の
出力を再度微分する、つまり二階微分を行なう第
２演算回路３９と、この第２演算回路３９の出力
である二階微分値の零点を求める第３演算回路４
０を備える。また、制御系３７内には他の演算を
行なう主演算回路４１やテーブル駆動制御回路４
２をも有している。そして、この制御系３７には
前記レーザ測長器１６や図外のテーブル駆動部を
接続している。 Furthermore, the half mirror 3 is attached to the half mirror 22.
A focus/dimension detection system 36 having two and three CCDs 33, 34, and 35 is provided. These three CCDs 33, 34, 35 are connected to the objective lens 18.
The pattern on the wafer 10 is imaged on the surface of the wafer 10 by the relay lens 20, and the CCDs 33 and 34
detect pattern edges in the X direction and Y direction, respectively, and the CCD 35 detects the focal point of the pattern.
These CCDs 33, 34, and 35 are connected to a control system 37. The control system 37 includes a first arithmetic circuit 38 that performs first-order differentiation, a second arithmetic circuit 39 that differentiates the output of this first arithmetic circuit 38 again, that is, performs second-order differentiation, and a second arithmetic circuit 39 that performs second-order differentiation. Third calculation circuit 4 for finding the zero point of a certain second-order differential value
0. The control system 37 also includes a main calculation circuit 41 that performs other calculations and a table drive control circuit 4.
It also has 2. The control system 37 is connected to the laser length measuring device 16 and a table drive unit (not shown).
以上の構成によれば、パターンの検出に先立つ
て焦点用照明系２４がウエーハ１０表面を照射
し、パターンをCCD３５上に結像した上でCCD
３５出力の鮮鋭度等を利用してＺテーブル位置を
制御系３７により制御し、焦点位置を設定する。
次いで、パターン照明系２５でパターンを照射し
パターンをCCD３３，３４上に結像する。これ
によりCCD３３，３４にはパターン形状に対応
した光学プロフアイルが検出でき、これに伴なつ
て電圧レベルの電気信号が検出される。今、Ｘ方
向のCCD３３についてみれば、第４図Ａ，Ｂの
平面、断面形状のパターン１Ａを検出した場合に
は、パターン１Ａのエツジ部１ａ，１ａでは直上
方向への反射光が低減されることから、同図Ｃの
ような特性の電圧レベルの電気信号を得ることが
できる。 According to the above configuration, prior to detecting a pattern, the focusing illumination system 24 illuminates the surface of the wafer 10, images the pattern on the CCD 35, and then displays the pattern on the CCD 35.
The Z table position is controlled by the control system 37 using the sharpness of the output of the Z table 35, and the focus position is set.
Next, the pattern illumination system 25 illuminates the pattern and images the pattern onto the CCDs 33 and 34. As a result, an optical profile corresponding to the pattern shape can be detected on the CCDs 33 and 34, and along with this, an electrical signal at a voltage level is detected. Now, looking at the CCD 33 in the X direction, when detecting the pattern 1A having the planar and cross-sectional shapes shown in FIGS. Therefore, it is possible to obtain an electrical signal with a voltage level characteristic as shown in FIG.
したがつて、この検出したレベル電気信号S1を
第１演算回路３８において微分すれば同図Ｄのよ
うにdV／dl信号2を求めることができ、更にこれ
を第２演算回路３９において微分すれば同図Ｅの
ように二階微分d2V／dl2信号S3を求めることが
できる。そして、この二階微分信号S3のd2V＝０
点を第３演算回路４０により求めれば、零点位置
Pa，Pb，Pc，Pdを算出することができる。これ
らの零点位置Pa，Pb，Pc，Pdは同図Ｄに示した
特性の極大、極小位置Pa′，Pb′，Pc′，Pd′であ
り、これは更に言えば同図Ｃの特性の変曲点位置
Pa″，Pb″，Pc″，Pd″であり、即ちパターンエツ
ジ部１ａ，１ａの各両端位置であることになる。
したがつて、本例の場合には、零点位置PaとPd
の距離をCCD３３上の対応する絵素の位置等を
利用して計測することによりパターン１Ａの幅寸
法を求めることができる。パターンスペースにつ
いても同様であり、またＹ軸方向のパターンにつ
いても同じである。 Therefore, by differentiating this detected level electric signal S1 in the first arithmetic circuit 38, the dV/dl signal 2 can be obtained as shown in FIG. For example, the second-order differential d 2 V/dl 2 signal S 3 can be obtained as shown in FIG. Then, d 2 V of this second-order differential signal S 3 = 0
If the point is found by the third arithmetic circuit 40, the zero point position
Pa, Pb, Pc, and Pd can be calculated. These zero point positions Pa, Pb, Pc, and Pd are the maximum and minimum positions Pa', Pb', Pc', and Pd' of the characteristics shown in figure D, and furthermore, these are the change of the characteristics of figure C. Curved point position
Pa'', Pb'', Pc'', and Pd'', that is, the positions at both ends of the pattern edge portions 1a, 1a.
Therefore, in this example, the zero point positions Pa and Pd
By measuring the distance using the position of the corresponding picture element on the CCD 33, the width dimension of the pattern 1A can be determined. The same applies to the pattern space, and the same applies to the pattern in the Y-axis direction.
したがつて、検出した信号をしきい値と比較す
る必要は全くなく、またしきい値の変動に伴なう
検出誤差が生じることもなく、更に検出信号のエ
ツジ部信号のピーク性が悪い場合にも高精度の検
出を行なうことができる。 Therefore, there is no need to compare the detected signal with the threshold, and there is no detection error caused by fluctuations in the threshold. It is also possible to perform highly accurate detection.
(1) 被検査パターンの光学プロフアイルから求め
られるレベル電気信号を二階微分し、かつこの
二階微分の零点を算出することによりパターン
のエツジを検出しかつパターン幅やパターンス
ペース幅を算出できるので、しきい値との比較
を不要にでき、しきい値が原因とされる種々の
不具合を防止して正確な検出を行なうことがで
きる。
(1) By second-order differentiating the level electrical signal obtained from the optical profile of the pattern to be inspected and calculating the zero point of this second-order differential, the edges of the pattern can be detected and the pattern width and pattern space width can be calculated. Comparison with a threshold value can be made unnecessary, various problems caused by the threshold value can be prevented, and accurate detection can be performed.
(2) レベル電気信号を二階微分して信号を求めて
いるので、レベル電気信号のピークが緩やかな
場合にも急峻なピーク特性にでき、零点位置に
よるパターンエツジ部の検出を高精度に行なう
ことができる。(2) Since the signal is obtained by second-order differentiation of the level electrical signal, even if the peak of the level electrical signal is gradual, it can have a steep peak characteristic, and pattern edge portions can be detected with high precision based on the zero point position. I can do it.
以上本発明者によつてなされた発明を実施例に
もとづき具体的に説明したが、本発明は上記実施
例に限定されるものではなく、その要旨を逸脱し
ない範囲で種々変更可能であることはいうまでも
ない。たとえば、検出用の光素子はCCD以外の
フオトマル、撮像管であつてもよく、またレーザ
光を利用する構成であつてもよい。また、二階微
分を一度に算出する演算回路を使用すれば第１演
算回路を省略することができる。 Although the invention made by the present inventor has been specifically explained based on the examples above, the present invention is not limited to the above examples, and it is understood that various changes can be made without departing from the gist of the invention. Needless to say. For example, the optical element for detection may be a photo sensor other than a CCD, an image pickup tube, or may be configured to use laser light. Furthermore, if an arithmetic circuit that calculates the second-order differential at once is used, the first arithmetic circuit can be omitted.
以上の説明では主として本発明者によつてなさ
れた発明をその背景となつた利用分野である半導
体ウエーハのパターンの検出に適用した場合につ
いて説明したが、それに限定されるものではな
く、マスクアライナにおけるアライメントマーク
の検出やその他のパターン検出を必要とするもの
全てに適用できる。
In the above explanation, the invention made by the present inventor was mainly applied to the detection of patterns on semiconductor wafers, which is the background field of application of the invention, but the invention is not limited thereto. It can be applied to anything that requires alignment mark detection or other pattern detection.
第１図はレベル電気信号の一例を示す図、第２
図Ａ，Ｂは夫々異なる検出方法の説明図、第３図
は本発明方法を実施する装置の全体斜視図、第４
図は本発明方法を説明する図である。
１Ａ……パターン、１ａ，１ａ……エツジ部、
１０……ウエーハ、１１……可動テーブル、１６
……レーザ測長器、１７……パターン検出部、１
８……対物レンズ、２４……焦点用照明系、２５
……パターン照明系、３３〜３５……CCD（化学
素子）、３６……焦点・寸法検出系、３７……制
御系、３８……第１演算回路（一階微分）、３９
……第２演算回路（二階微分）、４０……第３演
算回路（零点）、Pa〜Pd……零点位置。
Figure 1 shows an example of a level electrical signal, Figure 2 shows an example of a level electrical signal.
Figures A and B are explanatory diagrams of different detection methods, Figure 3 is an overall perspective view of an apparatus for carrying out the method of the present invention, and Figure 4 is an explanatory diagram of different detection methods.
The figure is a diagram explaining the method of the present invention. 1A...pattern, 1a, 1a...edge part,
10...Wafer, 11...Movable table, 16
... Laser length measuring device, 17 ... Pattern detection section, 1
8...Objective lens, 24...Focal illumination system, 25
...Pattern illumination system, 33-35...CCD (chemical device), 36...Focus/dimension detection system, 37...Control system, 38...First calculation circuit (first order differential), 39
...Second arithmetic circuit (second order differential), 40...Third arithmetic circuit (zero point), Pa~Pd...Zero point position.
Claims (1)
れたレベル電気信号からその二回微分信号を求
め、この二回微分信号の零点位置を算出してパタ
ーンエツジ部を検出し、かつこの零点位置を基準
にパターン幅やパターンスペースの寸法を求める
ことを特徴とする微細パターン検出方法。 ２ 被測定パターンをCCD等の光学素子上に結
像し、このCCDの出力によりレベル電気信号を
得る特許請求の範囲第１項記載の微細パターン検
出方法。 ３ 二回微分信号の複数個の零点位置の選択され
た零点位置間の寸法によりパターン幅やパターン
スペースの寸法を求めてなる特許請求の範囲第１
項又は第２項記載の微細パターン検出方法。[Scope of Claims] 1. A second differential signal is obtained from a level electrical signal obtained from the optical profile of the detected pattern, and a zero point position of the second differential signal is calculated to detect a pattern edge portion, and A fine pattern detection method characterized by determining the pattern width and pattern space dimensions based on this zero point position. 2. The fine pattern detection method according to claim 1, wherein the pattern to be measured is imaged on an optical element such as a CCD, and a level electric signal is obtained from the output of the CCD. 3. Claim 1, in which the pattern width and pattern space dimensions are determined based on the dimensions between selected zero point positions of a plurality of zero point positions of a twice differentiated signal.
The method for detecting a fine pattern according to item 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2162184A JPS60167341A (en) | 1984-02-10 | 1984-02-10 | Detection for fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2162184A JPS60167341A (en) | 1984-02-10 | 1984-02-10 | Detection for fine pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60167341A JPS60167341A (en) | 1985-08-30 |
| JPH0576780B2 true JPH0576780B2 (en) | 1993-10-25 |
Family
ID=12060126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2162184A Granted JPS60167341A (en) | 1984-02-10 | 1984-02-10 | Detection for fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60167341A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5760206A (en) * | 1980-09-30 | 1982-04-12 | Fujitsu Ltd | Measuring method for length |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5769234U (en) * | 1980-10-15 | 1982-04-26 |
-
1984
- 1984-02-10 JP JP2162184A patent/JPS60167341A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5760206A (en) * | 1980-09-30 | 1982-04-12 | Fujitsu Ltd | Measuring method for length |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60167341A (en) | 1985-08-30 |
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