JPH0575825B2 - - Google Patents
Info
- Publication number
- JPH0575825B2 JPH0575825B2 JP61283721A JP28372186A JPH0575825B2 JP H0575825 B2 JPH0575825 B2 JP H0575825B2 JP 61283721 A JP61283721 A JP 61283721A JP 28372186 A JP28372186 A JP 28372186A JP H0575825 B2 JPH0575825 B2 JP H0575825B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- laser beam
- ceramic material
- irradiated
- multilayer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910010293 ceramic material Inorganic materials 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えばCO2レーザを用いて、基材
に種々のセラミツクスを蒸着し、多層膜を形成さ
せるレーザ蒸着式多層膜形成装置に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a laser vapor deposition multilayer film forming apparatus for vapor depositing various ceramics onto a base material to form a multilayer film using, for example, a CO 2 laser. It is.
真空中に設置した被照射材にレーザ光を集光照
射し、被照射材を蒸発させ、蒸発粒子を金属基板
等の上に付着・堆積させ膜を形成させうるレーザ
蒸着装置には、いくつかの報告例がある。
There are several types of laser evaporation equipment that can irradiate a focused laser beam onto an irradiated material placed in a vacuum, evaporate the irradiated material, and form a film by attaching and depositing evaporated particles onto a metal substrate, etc. There are some reported cases.
第３図及び第４図は、例えば特開昭59−116373
号公報に示された従来のレーザ蒸着装置の構成図
であり、図において、１はレーザ発振器の例えば
CO2レーザ発振器より発振されたレーザ光、２は
レーザ光１を集光する集光レンズ、３は集光レン
ズ２で集光したレーザ光を真空チヤンバ４内に導
く透過窓、５は透過窓３より導かれ集光されたレ
ーザ光を照射される被照射材、７はレーザ光の集
光照射によつて被照射材５より蒸発した粒子を付
着・堆積させる基材である。 Figures 3 and 4 are, for example, published in Japanese Patent Application Laid-Open No. 59-116373.
1 is a configuration diagram of a conventional laser evaporation apparatus shown in the publication, and in the figure, 1 is a laser oscillator, for example.
A laser beam oscillated by a CO 2 laser oscillator, 2 a condenser lens that condenses the laser beam 1, 3 a transmission window that guides the laser beam condensed by the condenser lens 2 into the vacuum chamber 4, 5 a transmission window A material to be irradiated is irradiated with a laser beam guided and focused by 3, and a substrate 7 is to which particles evaporated from the material to be irradiated 5 are attached and deposited by the focused irradiation of the laser beam.
第４図は第３図の上面図である。 FIG. 4 is a top view of FIG. 3.
レーザ光１は集光レンズ２を通つて集光され、
透過窓３を通つて真空チヤンバ４に導入され、被
照射材５に照射される。集光されたレーザ光の照
射により被照射材５の粒子は蒸発し、この蒸発粒
子が飛び出す方向に配置された基材７上に蒸発物
が付着・堆積する。 The laser beam 1 is focused through a condensing lens 2,
The light is introduced into the vacuum chamber 4 through the transmission window 3, and the material to be irradiated 5 is irradiated. Particles of the irradiated material 5 are evaporated by irradiation with the focused laser beam, and evaporated matter is attached and deposited on the base material 7 arranged in the direction in which the evaporated particles fly out.
このレーザ蒸着装置を用いて多種類の被照射材
の粒子を蒸発させ基材上に蒸着させ、多層膜を形
成させるには、ある物質を蒸着した後、被照射材
を取り換えることによつて行なうことが可能であ
る。 To form a multilayer film by vaporizing particles of various types of irradiated materials onto a base material using this laser evaporation device, it is done by replacing the irradiated material after depositing a certain substance. Is possible.
しかし、上記のような従来の方法では、多層膜
を形成させるには、一度レーザの照射を停止し、
真空チヤンバの真空を破つて試料を交換する必要
があるため、工程上、不合理であること、一度大
気中に、形成された膜及び基材がさらされるので
酸化等の影響により所望の膜質の膜が得られない
こと、基材の温度を成膜中、制御している場合、
真空を破るために基材及び膜に一工程ごとに温度
変化が生じることが避けられないため温度の上
昇・下降に伴なう熱的要因に基づく歪が膜内に発
生し安定な膜が得られないこと、といつた問題点
があつた。 However, in the conventional method described above, in order to form a multilayer film, the laser irradiation is stopped once, and
Since it is necessary to break the vacuum of the vacuum chamber and replace the sample, it is unreasonable in terms of the process, and once the formed film and base material are exposed to the atmosphere, it may be difficult to achieve the desired film quality due to effects such as oxidation. If a film cannot be obtained and the temperature of the substrate is controlled during film formation,
In order to break the vacuum, it is unavoidable that temperature changes occur in the base material and the film at each step, so distortion occurs in the film due to thermal factors associated with the rise and fall of temperature, making it difficult to obtain a stable film. The problem was that it was not possible to do so.
一方、上記問題点を解説するレーザ蒸着装置と
して、特開昭60−177178号公報に示されたものが
ある。即ち、レーザ発振器より発振されたレーザ
光は、切り換え式可動ミラーで、真空チヤンバー
に設けた複数のレーザ窓の１つを選択して、真空
チヤンバー内に、基材と距離を介して配置された
固定式台座に設けられた所望の蒸着材料を選択
し、所望の槽を基材に蒸着するものである。 On the other hand, as a laser evaporation apparatus that addresses the above-mentioned problems, there is one disclosed in Japanese Patent Laid-Open No. 177178/1983. That is, the laser beam oscillated by the laser oscillator is placed in the vacuum chamber at a distance from the base material by selecting one of the plurality of laser windows provided in the vacuum chamber using a switchable movable mirror. A desired vapor deposition material provided on a fixed pedestal is selected, and a desired tank is vapor-deposited onto the base material.
しかしながら上記従来の装置は蒸着材料の選択
は切り換えミラーと、切り換えられたレーザを真
空チヤンバーへ導く導入窓とにより行なうので、
レーザの導入窓が複数で装置が複雑になり、切り
換えミラーが必要なため光路調整機構が複雑とな
る。さらに、蒸着層の種類が増すと一層複雑にな
るという問題点があつた。
However, in the conventional apparatus described above, the selection of the deposition material is performed by a switching mirror and an introduction window that guides the switched laser into the vacuum chamber.
Having multiple laser introduction windows complicates the device, and requires a switching mirror, which complicates the optical path adjustment mechanism. Furthermore, there is a problem in that as the number of types of deposited layers increases, the complexity becomes even more complex.
この発明は、かかる問題点を解決するためにな
されたもので、容易にかつ連続的にしかも膜質が
安定し、その制御が容易なレーザ蒸着式多層膜形
成装置を得ることを目的とする。 The present invention has been made to solve these problems, and an object of the present invention is to provide a laser vapor deposition multilayer film forming apparatus that can easily and continuously form a film with stable film quality and is easy to control.
この発明のレーザ蒸着式多層膜形成装置は、真
空雰囲気中で、可動式台座に異種類のセラミツク
ス材料をぞれぞれ基材に対向して載置し、所望の
セラミツクス材料をレーザビーム照射位置に次々
に配置し、異種のセラミツクスを次々に蒸発さ
せ、これらを上記基材に付着・堆積させるように
したものである。
In the laser vapor deposition multilayer film forming apparatus of the present invention, different types of ceramic materials are placed on a movable pedestal facing each other to a base material in a vacuum atmosphere, and the desired ceramic materials are positioned at the laser beam irradiation position. The different types of ceramics are successively evaporated and attached and deposited on the base material.
〔作用〕
この発明においては、同一真空中の異種類のセ
ラミツクス材料の中の必要とする可動台座の載置
されたセラミツクス材料を、適時、レーザ光の集
光位置に移動させるだけで、容易に、連続的な多
層膜形成を可能にする。[Function] In this invention, the required ceramic material on which the movable base is placed among different types of ceramic materials in the same vacuum can be easily moved to the laser beam focusing position at the appropriate time. , enabling continuous multilayer film formation.
また、同一真空中で、セラミツクス材料を移動
させるだけで蒸発させる物質を変えることができ
るので、膜質、膜厚、基材温度への工程上の要因
の影響がなく、安定な膜形成を可能にする。 In addition, since the substance to be evaporated can be changed by simply moving the ceramic material in the same vacuum, stable film formation is possible without the influence of process factors on film quality, film thickness, and substrate temperature. do.
さらに、レーザ蒸着式であるので、蒸着雰囲気
の設定を一定にするか、可変にするかは、自由に
選択できるので、他の膜形成法に比べて膜質の制
御雰囲気の転換が容易となる。 Furthermore, since it is a laser vapor deposition method, it is possible to freely select whether the setting of the vapor deposition atmosphere is constant or variable, making it easier to change the atmosphere to control the film quality compared to other film forming methods.
以下、この発明の一実施例を図において説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.
第１図及び第２図は、この発明の一実施例のレ
ーザ蒸着式多層膜形成装置の構成図であり、図に
おいて、１はレーザ発振器、例えばCO2レーザ発
振器により発振されたレーザ光、２はレーザ光１
を集光する集光レンズ、３は集光レンズ２で集光
されたレーザ光を真空チヤンバ４内に導く透過
窓、６は透過窓３より導かれた集光されたレーザ
光を照射される異種のセラミツクス材料、６Ａ，
６Ｂおよび６Ｃは各々異種のセラミツクス材料、
７はレーザ光の集光照射によつて異種のセラミツ
クス材料６より蒸発した粒子を付着、堆積させる
基材である。 1 and 2 are configuration diagrams of a laser vapor deposition multilayer film forming apparatus according to an embodiment of the present invention. In the figures, 1 indicates a laser beam oscillated by a laser oscillator, for example, a CO 2 laser oscillator; 2 is laser beam 1
3 is a transmission window that guides the laser light focused by the collection lens 2 into the vacuum chamber 4; 6 is irradiated with the focused laser light guided from the transmission window 3; Different types of ceramic materials, 6A,
6B and 6C are different ceramic materials,
Reference numeral 7 denotes a base material to which particles evaporated from different types of ceramic materials 6 are attached and deposited by condensed laser beam irradiation.
また、８は異種類のセラミツクス材料をそれぞ
れ基材７に対向して載置し、上記セラミツクス材
料６Ａ，６Ｂ，６Ｃを適宜レーザ光の集光位置に
移動させる可動式台座である。 Further, reference numeral 8 denotes a movable pedestal on which different types of ceramic materials are respectively placed facing the base material 7, and the ceramic materials 6A, 6B, 6C are moved to the laser beam focusing position as appropriate.
第２図は第１図の上面図である。 FIG. 2 is a top view of FIG. 1.
上記のように構成されたレーザ蒸着式多層膜形
成装置においては、例えば10-4torrに排気した真
空雰囲気中で、集光されたレーザ光が、異種のセ
ラミツクス材料６のうちの一つに照射されること
により、第２図の従来の方法と同様の原理で基材
７に膜が形成されるが、異種のセラミツクス材料
６は可動式台座８の上に載置されているので、可
動式台座８を適時移動させることにより、容易に
被照射されるセラミツクス材料を変えることがで
き、工程を停止することなく、連続して多層膜の
形成が行なえる。 In the laser vapor deposition multilayer film forming apparatus configured as described above, a focused laser beam is irradiated onto one of the different types of ceramic materials 6 in a vacuum atmosphere evacuated to, for example, 10 -4 torr. As a result, a film is formed on the base material 7 using the same principle as the conventional method shown in FIG. By moving the pedestal 8 at appropriate times, the ceramic material to be irradiated can be easily changed, and multilayer films can be formed continuously without stopping the process.
例えば、セラミツクス材料６Ａの次にセラミツ
クス材料６Ｂを蒸発させ、次いでセラミツクス材
料６Ｃを蒸発させたい場合、集光されたレーザ光
の照射位置に所望のセラミツクス材料を移動させ
るだけ、すなわち、最初のセラミツクス材料６Ａ
の照射後、台座８を右へ移動し、次のセラミツク
ス材料６Ｂを照射、次いで台座をさらに右方向へ
移動し、最初のセラミツクス材料６Ｃを照射する
という工程だけで、多層膜の連続的な形成が容易
に行なえる。 For example, if you want to evaporate ceramic material 6B next to ceramic material 6A, and then evaporate ceramic material 6C, all you have to do is move the desired ceramic material to the irradiation position of the focused laser beam. 6A
After irradiation, the pedestal 8 is moved to the right, the next ceramic material 6B is irradiated, the pedestal is further moved to the right, and the first ceramic material 6C is irradiated. can be easily done.
以上のように、レーザ蒸着を利用した多層膜形
成装置は、セラミツクス材料の移動だけで、多層
膜形成が連続的に、容易に行なえるので、膜形成
の連続性および合理性が高い。即ち、レーザの導
入窓が１つで良く、装置が簡便になり、切り換え
ミラーが不要で光路調整機構が簡素化できる。
又、可動式台座にマウントするだけで、多種類の
材料を蒸発源として利用できるので、装置の構成
を煩雑化することなく、多種類層膜形成に有利で
ある。 As described above, the multilayer film forming apparatus using laser vapor deposition can easily and continuously form a multilayer film simply by moving the ceramic material, so that the continuity and rationality of film formation are high. That is, only one laser introduction window is required, the apparatus is simple, and a switching mirror is not required, so the optical path adjustment mechanism can be simplified.
Moreover, since a wide variety of materials can be used as evaporation sources simply by mounting the device on a movable pedestal, it is advantageous to form multi-layered films without complicating the configuration of the device.
さらに、セラミツクス材料の移動を制御すれ
ば、多層膜形成の自動化も容易である。 Furthermore, if the movement of the ceramic material is controlled, it is easy to automate the formation of multilayer films.
例えば、第１図において、膜厚モニター計（例
えば水晶振動子）を基材７に併置、すなわち９の
位置に設置し、その信号を制御系を通じて可動式
台座８とレーザ光の出力、すなわちレーザ発振器
の出力とを連動させることにより、所要の膜厚に
なれば、自動的に蒸発物質、すなわちセラミツク
ス材料を変える多層膜形成装置とすることが容易
に可能となる。 For example, in FIG. 1, a film thickness monitor (for example, a crystal oscillator) is placed side by side with the base material 7, that is, at position 9, and the signal is sent to the movable pedestal 8 and the output of the laser beam, that is, the laser beam output, through the control system. By interlocking the output of the oscillator, it becomes possible to easily create a multilayer film forming apparatus that automatically changes the evaporation material, that is, the ceramic material, when the desired film thickness is reached.
なお、上記実施例において、照射するレーザ光
には、CO2レーザ以外のレーザ光、例えばYAG
レーザを用いてもよい。また、膜厚モニター計と
して水晶振動子を用いたが、他の膜厚モニター
法、例えば原子吸光法などでもよい。 In the above embodiment, the laser beam to be irradiated may include a laser beam other than a CO 2 laser, such as a YAG laser beam.
A laser may also be used. Furthermore, although a crystal oscillator was used as a film thickness monitor, other film thickness monitoring methods such as atomic absorption spectrometry may also be used.
また、セラミツクス材料を被照射材として用い
たが、他の材料でも同様の効果が得られる。 Furthermore, although ceramic material was used as the irradiated material, similar effects can be obtained with other materials.
以上説明したとおり、この発明は、異種類のセ
ラミツクス材料を載置にした可動式台座を備え、
レーザビーム照射位置に各々のセラミツクス材料
が一致するようにその可動式台座を移動自在にし
た構成にしたので、可動式台座に載置されたセラ
ミツク材料を適時レーザビーム照射位置に移動す
るだけで、容易に連続的な多層形成ができ、ま
た、可動式台座にセラミツク材料を載置するだけ
で、多種類のセラミツク材料を蒸発源として利用
できるので、装置構成を複雑にすることのないレ
ーザ蒸着式多層膜形成装置が得られる効果があ
る。
As explained above, the present invention includes a movable pedestal on which different types of ceramic materials are placed,
The movable pedestal is configured to be movable so that each ceramic material matches the laser beam irradiation position, so simply by moving the ceramic material placed on the movable pedestal to the laser beam irradiation position at the appropriate time. The laser evaporation method does not require complicating the equipment configuration because it can easily form continuous multi-layers and can use many types of ceramic materials as evaporation sources simply by placing the ceramic materials on a movable pedestal. This has the effect of providing a multilayer film forming apparatus.
第１図はこの発明の一実施例のレーザ蒸着式多
層膜形成装置の構成図で、第２図は第１図の上面
図、第３図は従来のレーザ蒸着式膜形成装置の構
成図で、第４図は第３図の上面図である。
図において、１はレーザ光、４は真空チヤン
バ、６は異種類のセラミツクス材料、７は基材、
８は可動式台座である。なお、各図中、同一符号
は同一又は相当部分を示す。
FIG. 1 is a configuration diagram of a laser evaporation type multilayer film forming apparatus according to an embodiment of the present invention, FIG. 2 is a top view of FIG. 1, and FIG. 3 is a configuration diagram of a conventional laser evaporation type film forming apparatus. , FIG. 4 is a top view of FIG. 3. In the figure, 1 is a laser beam, 4 is a vacuum chamber, 6 is a different type of ceramic material, 7 is a base material,
8 is a movable pedestal. In each figure, the same reference numerals indicate the same or equivalent parts.
Claims (1)
ムを照射し蒸発させ、そのセラミツク材料に対向
して配置された基材にその蒸発したセラミツク材
料の粒子を付着および堆積させるレーザ蒸着式多
層膜形成装置において、異種類のセラミツク材料
を載置した可動式台座を備え、上記レーザビーム
照射位置に各々のセラミツクス材料が一致するよ
うに上記可動式台座を移動自在にしたことを特徴
とするレーザ蒸着式多層膜形成装置。1. A laser vapor deposition multilayer film forming apparatus that irradiates a ceramic material with a laser beam in a vacuum atmosphere to evaporate it, and then attaches and deposits particles of the evaporated ceramic material on a base material placed opposite to the ceramic material. Laser vapor deposition multilayer film formation, comprising a movable pedestal on which different types of ceramic materials are placed, and the movable pedestal is movable so that each ceramic material matches the laser beam irradiation position. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28372186A JPS63137162A (en) | 1986-11-28 | 1986-11-28 | Apparatus for forming multilayered film by vapor deposition with laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28372186A JPS63137162A (en) | 1986-11-28 | 1986-11-28 | Apparatus for forming multilayered film by vapor deposition with laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63137162A JPS63137162A (en) | 1988-06-09 |
| JPH0575825B2 true JPH0575825B2 (en) | 1993-10-21 |
Family
ID=17669228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28372186A Granted JPS63137162A (en) | 1986-11-28 | 1986-11-28 | Apparatus for forming multilayered film by vapor deposition with laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63137162A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0830357A (en) * | 1994-07-20 | 1996-02-02 | Nec Gumma Ltd | Control system for fan for cooling |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931865A (en) * | 1982-08-13 | 1984-02-21 | Ulvac Corp | Capsule type evaporating source |
| JPS59116373A (en) * | 1982-12-22 | 1984-07-05 | Agency Of Ind Science & Technol | Vapor deposition device by laser |
-
1986
- 1986-11-28 JP JP28372186A patent/JPS63137162A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931865A (en) * | 1982-08-13 | 1984-02-21 | Ulvac Corp | Capsule type evaporating source |
| JPS59116373A (en) * | 1982-12-22 | 1984-07-05 | Agency Of Ind Science & Technol | Vapor deposition device by laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0830357A (en) * | 1994-07-20 | 1996-02-02 | Nec Gumma Ltd | Control system for fan for cooling |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63137162A (en) | 1988-06-09 |
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