JPS5931865A - Capsule type evaporating source - Google Patents
Capsule type evaporating sourceInfo
- Publication number
- JPS5931865A JPS5931865A JP13990682A JP13990682A JPS5931865A JP S5931865 A JPS5931865 A JP S5931865A JP 13990682 A JP13990682 A JP 13990682A JP 13990682 A JP13990682 A JP 13990682A JP S5931865 A JPS5931865 A JP S5931865A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- laser light
- evaporation source
- evaporated
- capsule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明&j新規な蒸発源、特に定量の蒸発物質を収容し
たカプセル型蒸発源に関する◇
従来公知の蒸発源は、被蒸発物質からなるフィラメント
又e、4被蒸発物質を収容したボートに辿′屯して披蒸
究、物゛円の温鹿を上昇させ、蒸着を行う構造のものが
多く使用されている。これら公知の蒸発源はフィラメン
ト部2通電部の複雑な絶縁構造が必要であシ、更にフィ
ラメントの断線及び絶縁不良等の不測の事故が多く、信
頼性のある蒸発源とけ認められず、更に、1個の形状が
大型であシ多数個の蒸発源を使用する必要がある場合に
シ」被蒸着基板近く圧装置できず、一定量の膜厚を形成
する際多量の蒸発物質を必要とする等の諸欠点がある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel evaporation source, particularly a capsule-type evaporation source containing a fixed amount of evaporation substance ◇ Conventionally known evaporation sources consist of a filament or e, consisting of a substance to be evaporated. Many structures are used in which the vapor deposition is carried out by returning to the boat where the vapor is stored and then elevating the material to conduct the vapor deposition. These known evaporation sources require a complicated insulation structure for the filament part 2 and the current-carrying part, and furthermore, there are many unexpected accidents such as filament breakage and poor insulation, and they are not recognized as reliable evaporation sources. When a single piece is large in size and requires the use of multiple evaporation sources, it is not possible to use a pressure device near the substrate to be evaporated, and a large amount of evaporation material is required to form a certain amount of film thickness. There are various drawbacks such as.
公知の蒸発源の前述の如き諸欠点を改良すべく種々検討
の結果、光フアイバー機構によるレーザー光を利用する
新規な構成のカプセル型蒸発源の開発に成功したもので
あり、本発明は前n11.特1151〜求の範囲各項に
明記した如き構成からなるカプセル型蒸発源を提供する
ものである。As a result of various studies to improve the above-mentioned drawbacks of known evaporation sources, we have succeeded in developing a capsule-type evaporation source with a new configuration that utilizes laser light with an optical fiber mechanism, and the present invention .. The present invention provides a capsule-type evaporation source having a structure as specified in each item of the scope of the present invention.
本発明の実施態様の数例を示す添付図面に基いて更に詳
細に説明する。The invention will now be described in more detail with reference to the accompanying drawings, which show some examples of embodiments of the invention.
v、1図は本発明カプセル型蒸発源の例を示す断面図で
あり、1はレーザー光を吸収し又は透過l〜得る材料か
らなるルツボである。尚、レーザー光を吸収し得る月1
1としては炭素又は黒鉛、透過し得る利料としcd石英
等である。i!1λ1図A1黒鉛ルツボであり、(41
1えC・よランn−(t、ancer ) t’−リゞ
−1r1の力1順Jでより容易に破壊1.得る旧牙1か
らなるi・ツヅシール2にJ、り被蒸発物rj3を旧止
しである。第1図B V、1石英ルツボであり、ルツボ
m部&J、加熱又t]ルツボ加熱時に発生する内圧によ
り容易LC破壊し得る。Lうに石英薄膜からなるトップ
シール1′どしてJ’J止した態様を示す。FIG. 1 is a sectional view showing an example of the capsule-type evaporation source of the present invention, and 1 is a crucible made of a material that absorbs or transmits laser light. In addition, the moon that can absorb laser light1
Examples of the material include carbon or graphite, and CD quartz as a material that can be permeated. i! 1λ1 Figure A1 graphite crucible, (41
1E C・Yoran n-(t, ancer) t'-re-1 r1 force 1 order J more easily destroys 1. The evaporated material rj3 is added to the old seal 2 made of the old tooth 1 to be obtained. FIG. 1 B V, 1 is a quartz crucible, and the LC can easily be destroyed by the internal pressure generated during crucible heating. A top seal 1' made of a thin quartz film is used to seal J'J.
本発明のカプセル型蒸発源は」二記の如き構成から在つ
でおり、レーザー光による蒸発源と12での使用態(卯
を&’42 [IZl〜u1,6図にJ、しい−し説明
する。The capsule-type evaporation source of the present invention has the configuration as described in ``2''. explain.
Ml、 2 [Xl (ζ]レーザー光をルツボ1の側
面から照射する場合のtl、li而面図である。pt・
li蒸発物’pi 3を装入し、トップシール2で制止
したルツボ1を、水冷シュラウド4内に熱シールド5を
介して保持する。Ml, 2 [Xl (ζ)] This is a tl, li metamorphic diagram when the laser beam is irradiated from the side of the crucible 1.pt.
A crucible 1 charged with li evaporate 'pi 3 and stopped by a top seal 2 is held in a water-cooled shroud 4 via a heat shield 5.
水冷シュラウド4及び熱シールド5を貫通した1/−一
り゛−光照射窓6を設け、光ファイ/z−7より照射さ
れるレーザー光8・を集束レンズ9等により集束シて、
前R+】ルツボ1の側壁に照射し、ルツボ1壁を加熱す
るか又dルツボ壁を透過し−〔ネ1υ蒸発物質を加熱し
て蒸発させる構成としである。A 1/- single-light irradiation window 6 is provided that penetrates the water-cooling shroud 4 and the heat shield 5, and the laser beam 8 emitted from the optical fiber/z-7 is focused by a focusing lens 9 or the like.
The radiation is irradiated onto the side wall of the crucible 1 to heat the crucible 1 wall, or is transmitted through the crucible wall to heat and evaporate the evaporated substance.
第3図ij 第2図と同様であるが、レーデ−光8をル
ツボ底部より照射する構成としたものであり、同一符号
は同一部材を示している0尚、第6図において10は断
熱セラミックスである。Fig. 3 ij It is the same as Fig. 2, but has a structure in which the radar light 8 is irradiated from the bottom of the crucible, and the same reference numerals indicate the same members.In Fig. 6, 10 is a heat-insulating ceramic It is.
第4図〜第6図d本発明蒸発源の使1(」態様のυ例を
示す略図であυ、第4図は本発明蒸発源116個を被蒸
着基板12に対して求心状に配役した例であり、前述し
た如く本発明蒸発源&」置・久めて小型化し得るので、
蒸発源群11と基板12との距真(ILを例えば60闘
と小さくすることができ、更に蒸発源群の設置幅を約1
00龍のスR−スにすることができ、従って、蒸発物質
の無駄を少なくし、効率よく基板面に蒸着膜を生成する
ことができる0へ1,4図におい113け過冷却コンデ
ンサーであり、各蒸発14< 11間に配役することに
より蒸発源間相互の汚染防止の作用をなすものである。Figures 4 to 6 d are schematic diagrams showing an example of the use of the evaporation source of the present invention (1). Figure 4 shows 116 evaporation sources of the present invention arranged centripetally with respect to the substrate 12 to be deposited. As mentioned above, the evaporation source of the present invention can be installed and miniaturized for a long time.
The distance between the evaporation source group 11 and the substrate 12 (IL) can be reduced to, for example, 60 mm, and the installation width of the evaporation source group can be reduced to about 1
It is a supercooled condenser with a temperature of 0.0 to 1,4 which can reduce the waste of evaporated material and efficiently produce a deposited film on the substrate surface. , and between each evaporator 14 < 11 to prevent mutual contamination between the evaporation sources.
@5図は本発明蒸発源11を過冷却コンデンサー13を
介して併設した例を示し、第4図図示の例と同様に蒸発
源11と基板12間の距離を小とし、かつ各蒸発源11
を設置幅を小さくすることができ、更に基板12又は蒸
発源11の何れかを移動することによシ基板12上に異
種の金楓膜又は合金膜を蒸着さぜることもできる。@Figure 5 shows an example in which the evaporation source 11 of the present invention is installed via a supercooling condenser 13, in which the distance between the evaporation source 11 and the substrate 12 is made small as in the example shown in Figure 4, and each evaporation source 11
Furthermore, by moving either the substrate 12 or the evaporation source 11, a different type of gold maple film or alloy film can be vapor-deposited on the substrate 12.
第6図は本発明の小型蒸発源11をマニピュレータ14
の先端部に保持し、マスク15との併用によって基板1
2の特定の位置に蒸発源11を移動させながら蒸着膜を
成長させ得る例を示す略図である。FIG. 6 shows how the small evaporation source 11 of the present invention is connected to the manipulator 14.
By holding it at the tip of the substrate 1 and using it together with the mask 15
2 is a schematic diagram showing an example in which a deposited film can be grown while moving an evaporation source 11 to a specific position in FIG.
7′+−、2図1望(示の直+’f=、 10 v囮グ
のグラファイトルツボにルツボ内を減圧したのち、50
Wのヤグ(YAG)レーザーを照射してルツボ全体を加
熱した。この時ルツボ全体の最高温度は630’Cであ
った。ルツボ温度が300’Cの時にルツボの上方15
0m1の位置でAsの蒸気分圧tj、1x10 トー
ルであり、基板(GaAs)にGaとともKAsが蒸着
され、光IC用として適したGaA、s膜の成長に充分
な蒸気分圧が得られた。7'+-, 2 Figure 1 view (direct +'f=, 10 V decoy graphite crucible, after reducing the pressure inside the crucible, 50
The entire crucible was heated by irradiation with a W YAG laser. At this time, the maximum temperature of the entire crucible was 630'C. 15 above the crucible when the crucible temperature is 300'C
At the position of 0 m1, the vapor partial pressure tj of As is 1 x 10 Torr, and KAs and Ga are deposited on the substrate (GaAs), and a vapor partial pressure sufficient for the growth of a GaA, S film suitable for optical ICs is obtained. Ta.
以上詳述した通り、本発明蒸発源は構造が簡イ1であっ
て、小型の蒸発源とすることができ、従って蒸発源と基
板間の距離を小さくし得、蒸発源群を小さいスは−スに
併設することもできるので、蒸発物質を無駄なく利用す
ることができる。又、狭いスR−スに蒸発源を配列でき
るのでn棟の蒸発物質を同時に使用して複合薄膜層又は
合金膜を容易に成長させることができる等、従来品にみ
られない作用効果を奏し得るものである。As detailed above, the evaporation source of the present invention has a simple structure1, and can be made into a small evaporation source.Therefore, the distance between the evaporation source and the substrate can be shortened, and the evaporation source group can be formed into a small space. - It can also be installed alongside a space, so evaporated materials can be used without waste. In addition, since the evaporation sources can be arranged in a narrow space, n evaporation materials can be used simultaneously to easily grow a composite thin film layer or an alloy film, and other effects not found in conventional products are achieved. It's something you get.
第1図は本発明のカプセル型蒸発源の例を示す断面略図
、繁2図、第6図は本発明カプセル型蒸発源にレーザー
光を照射する態様を示す略図、第4図〜第6図は本発明
カプセル型蒸発源の使用例を示す配置略図であり、図中
、1はルツボ、 2はトップシール、 ろは被蒸発物實
、 4は水冷シュラウド、 5け熱シールド、 6け照
射窓。
7は光ファイバー、 8はレーザー光、 9は集光レン
ズ、 10け断熱セラミックス、 11は蒸発源群、
12は基板、 15は過冷却コンデ” −リ−+ 1
4 i17:=ピュL’ −タ、 15H−rスフを
それぞれ示す、
第1図
A B
第2図
第4図
エゴ〜12
第5図Fig. 1 is a schematic cross-sectional view showing an example of the capsule-type evaporation source of the present invention, Fig. 2, and Fig. 6 are schematic views showing the mode of irradiating the capsule-type evaporation source of the present invention with laser light, and Figs. 4 to 6. 1 is a schematic layout diagram showing an example of the use of the capsule-type evaporation source of the present invention. In the diagram, 1 is a crucible, 2 is a top seal, 4 is the actual material to be evaporated, 4 is a water cooling shroud, 5 is a heat shield, and 6 is an irradiation window. . 7 is an optical fiber, 8 is a laser beam, 9 is a condenser lens, 10 is a heat insulating ceramic, 11 is an evaporation source group,
12 is the board, 15 is the supercooled condenser.
4 i17:=PyuL'-ta, 15H-rSuf respectively, Fig. 1A B Fig. 2 Fig. 4 Ego~12 Fig. 5
Claims (1)
からなり被蒸発物質を装入したルツボに、加熱又は内圧
により容易に破壊し得るトップシールを設けたことを特
徴とするカプセル型蒸発源。 (2) ルツボへのレーザー光照射用光ファイアz−
轡横を付設した特許請求の範囲第1項記載のカプセル型
蒸発源。 +31 前記蒸発源のトップシール部への集光機構を
併設した特許h(,求の範囲第1項記載のカプセル型蒸
発源。[Scope of Claims] fil A capsule characterized in that a crucible made of a material capable of absorbing or transmitting most of laser light and charged with a substance to be evaporated is provided with a top seal that can be easily destroyed by heating or internal pressure. type evaporation source. (2) Optical fire z- for irradiating the crucible with laser light
A capsule-type evaporation source according to claim 1, which is provided with a sidewall. +31 A capsule-type evaporation source according to Patent h (Required Item 1), which is also equipped with a light condensing mechanism to the top seal portion of the evaporation source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13990682A JPS5931865A (en) | 1982-08-13 | 1982-08-13 | Capsule type evaporating source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13990682A JPS5931865A (en) | 1982-08-13 | 1982-08-13 | Capsule type evaporating source |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5931865A true JPS5931865A (en) | 1984-02-21 |
JPS6157907B2 JPS6157907B2 (en) | 1986-12-09 |
Family
ID=15256377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13990682A Granted JPS5931865A (en) | 1982-08-13 | 1982-08-13 | Capsule type evaporating source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931865A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63137162A (en) * | 1986-11-28 | 1988-06-09 | Mitsubishi Electric Corp | Apparatus for forming multilayered film by vapor deposition with laser |
WO2007065685A1 (en) * | 2005-12-07 | 2007-06-14 | Novaled Ag | Method for the deposition of a vaporizing material |
JP2008524991A (en) * | 2004-12-24 | 2008-07-17 | フナ ホールディングズ ピーティーワイ リミテッド オン ビハーフ オブ エッチジェイ ファミリー トラスト | Reduction of seabird bycatch |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6396809U (en) * | 1986-12-12 | 1988-06-22 |
-
1982
- 1982-08-13 JP JP13990682A patent/JPS5931865A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63137162A (en) * | 1986-11-28 | 1988-06-09 | Mitsubishi Electric Corp | Apparatus for forming multilayered film by vapor deposition with laser |
JPH0575825B2 (en) * | 1986-11-28 | 1993-10-21 | Mitsubishi Electric Corp | |
JP2008524991A (en) * | 2004-12-24 | 2008-07-17 | フナ ホールディングズ ピーティーワイ リミテッド オン ビハーフ オブ エッチジェイ ファミリー トラスト | Reduction of seabird bycatch |
WO2007065685A1 (en) * | 2005-12-07 | 2007-06-14 | Novaled Ag | Method for the deposition of a vaporizing material |
EP1798306A1 (en) * | 2005-12-07 | 2007-06-20 | Novaled AG | Method of vapour deposition |
EP1939320A2 (en) | 2005-12-07 | 2008-07-02 | Novaled AG | Method of vapour deposition |
EP1939320A3 (en) * | 2005-12-07 | 2008-09-17 | Novaled AG | Method of vapour deposition |
US8227029B2 (en) * | 2005-12-07 | 2012-07-24 | Novaled Ag | Method for depositing a vapour deposition material |
Also Published As
Publication number | Publication date |
---|---|
JPS6157907B2 (en) | 1986-12-09 |
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