JPH0575576B2 - - Google Patents
Info
- Publication number
- JPH0575576B2 JPH0575576B2 JP60064254A JP6425485A JPH0575576B2 JP H0575576 B2 JPH0575576 B2 JP H0575576B2 JP 60064254 A JP60064254 A JP 60064254A JP 6425485 A JP6425485 A JP 6425485A JP H0575576 B2 JPH0575576 B2 JP H0575576B2
- Authority
- JP
- Japan
- Prior art keywords
- copper plate
- circuit board
- ceramic circuit
- copper
- adhesive strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】
［発明の技術分野］
本発明はアルミナ製基板と銅板とを直接接合し
た接着強度の大きなセラミツクス回路基板に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a ceramic circuit board with high adhesive strength in which an alumina substrate and a copper plate are directly bonded.
［発明の技術的背景とその問題点］
近年、トランスジスタ・モジユール用基板など
として使用されるセラミツクス回路基板の製造方
法として、アルミナ製基板等のセラミツクス基板
の所定位置に導体回路を構成する銅板を配置し、
銅の融点（1083℃）以下、銅−酸化銅の共晶温度
（1065℃）以上に加熱して接合面に形成された銅
の共晶融体により両者を直接接合させる方法が検
討されている。[Technical background of the invention and its problems] In recent years, as a manufacturing method for ceramic circuit boards used as substrates for transistor modules, etc., copper plates constituting conductor circuits are placed at predetermined positions on ceramic substrates such as alumina substrates. place,
A method of directly bonding the two using a copper eutectic melt formed on the joint surface by heating below the melting point of copper (1083℃) and above the eutectic temperature of copper-copper oxide (1065℃) is being considered. .
この方法において銅板との接着強度が不充分な
ことがあり、また回路基板の銅板表面にふくれや
はがれが生じることがあつて、製造歩留りが低い
という問題点があつた。 In this method, the adhesive strength with the copper plate may be insufficient, and the surface of the copper plate of the circuit board may blister or peel, resulting in a low manufacturing yield.
［発明の目的］
本発明者らはセラミツクス基板として従来より
粒子が細かく表面粗さ（中心線平均粗さ）の小さ
いアルミナ製基板を使用することにより、銅板と
の接合面積が大きくなつて接着強度が増大するこ
とを見い出した。[Purpose of the Invention] The present inventors used an alumina substrate with finer particles and lower surface roughness (center line average roughness) than conventional ceramic substrates, thereby increasing the bonding area with the copper plate and improving adhesive strength. was found to increase.
本発明はこのような知見にもとずいてなされた
もので、接着強度が大きく、製造歩留りを向上さ
せたセラミツクス回路基板を提供することを目的
とする。 The present invention was made based on such knowledge, and an object of the present invention is to provide a ceramic circuit board with high adhesive strength and improved manufacturing yield.
［発明の概要］
すなわち本発明のセラミツクス回路基板は表面
粗さ（中心線平均粗さ）が0.1〜0.6μｍ栄ａのア
ルミナ製基板の片面または両面に、銅版を加熱に
より直接接合してなることを特徴としている。[Summary of the invention] That is, the ceramic circuit board of the present invention is made by directly bonding a copper plate to one or both sides of an alumina substrate having a surface roughness (center line average roughness) of 0.1 to 0.6 μm by heating. It is characterized by
本発明においてアルミナ製基板の表面粗さ（中
心線平均粗さ）を0.1〜0.6μｍRaと限定した理由
は、0.1μｍRaより小さいと銅の共晶融体が漏れ
にくくなるとともに機械的な食い込みが小さくな
るので接着強度が弱くなり、0.6μｍRaより大き
いとポアーが多くなつて銅板と接合する面積が小
さくなるので接着強度が１充分になるとともに、
銅板中の酸素が酸素ガスとなつてふくれやはがれ
の原因となることによる。アルミナ製基板の密度
は3.65〜3.90ｇ／cm3が好ましく、これにより小さ
いとポアーが多くなつて接着強度が小さくなる。 The reason why the surface roughness (center line average roughness) of the alumina substrate is limited to 0.1 to 0.6 μmRa in the present invention is that if it is smaller than 0.1 μmRa, the eutectic melt of copper will not leak easily and the mechanical bite will be small. If it is larger than 0.6μmRa, there will be many pores and the area to be bonded to the copper plate will be small, so the adhesive strength will be 1 or more.
This is because the oxygen in the copper plate turns into oxygen gas, causing blistering and peeling. The density of the alumina substrate is preferably 3.65 to 3.90 g/cm 3 , and if it is too small, the number of pores will increase and the adhesive strength will decrease.
本発明のセラミツクス回路基板はたとえば次の
ようにして製造される。 The ceramic circuit board of the present invention is manufactured, for example, as follows.
アルミナ製基板の片面または両面に酸素を100
〜2000ppm、好ましくは300〜500ppm含有する、
たとえばタフピツチ電解銅板を配置し、窒素ガス
等の不活性雰囲気中、1065〜1083℃で１〜30分間
加熱する。 100% oxygen on one or both sides of the alumina substrate
Contains ~2000ppm, preferably 300-500ppm,
For example, a tough pitch electrolytic copper plate is placed and heated at 1065 to 1083° C. for 1 to 30 minutes in an inert atmosphere such as nitrogen gas.
あるいは酸素をほとんど含有しない銅板を使用
する場合は酸化性雰囲気中で加熱する。 Alternatively, if a copper plate containing almost no oxygen is used, it is heated in an oxidizing atmosphere.
［発明の実施例］ 次に本発明の実施例について説明する。[Embodiments of the invention] Next, examples of the present invention will be described.
実施例
表面粗さ（中心線平均粗さ）が0.3〜0.5μｍRa、
密度3.70〜3.86ｇ／cm3、大きさ54mm×33mm×0.635
mmのアルミナ製基板の両面に酸素含有量400ppm、
厚さ0.3mmの銅板を配置し、この状態で1075℃に
保持した連続炉に装入し、炉内に窒素ガスを流し
ながら、試料を200mm／分の速度で搬送して加熱
した。出口から試料を取り出し、銅板の接着状態
を調べたところ、接着強度は15〜18Kg／cmで液体
浸透深傷試験による不良率は約10％であつた。Example Surface roughness (center line average roughness) is 0.3 to 0.5 μmRa,
Density 3.70-3.86g/ cm3 , size 54mm x 33mm x 0.635
Oxygen content 400ppm on both sides of mm alumina substrate,
A copper plate with a thickness of 0.3 mm was arranged, and in this state it was placed in a continuous furnace maintained at 1075°C, and the sample was heated by being transported at a speed of 200 mm/min while flowing nitrogen gas into the furnace. When a sample was taken out from the outlet and the adhesion state of the copper plate was examined, the adhesion strength was 15 to 18 kg/cm, and the failure rate by liquid penetration deep scratch test was about 10%.
一方表面粗さ（中心線平均粗さ）が0.7μｍRa、
密度が3.55〜3.64ｇ／cm3のアルミナ製基板を使用
したセラミツクス回路基板は、接着強度が10〜14
Kg／cm、液体浸透深傷試験による不良率は約20％
であつた。 On the other hand, the surface roughness (center line average roughness) is 0.7μmRa,
Ceramic circuit boards using alumina substrates with a density of 3.55 to 3.64 g/ cm3 have an adhesive strength of 10 to 14.
Kg/cm, defective rate by liquid penetration deep scratch test is approximately 20%
It was hot.
［発明の効果］
以上の実施例からも明らかなように本発明方法
によれば接着強度のセラミツクス回路基板が得ら
れ、また不良率が低下して製造歩留りが向上す
る。[Effects of the Invention] As is clear from the above examples, according to the method of the present invention, a ceramic circuit board with high adhesive strength can be obtained, and the defective rate is reduced and the manufacturing yield is improved.
Claims (1)
Raのアルミナ製基板の片面または両面に、銅板
を加熱により直接接合してなることを特徴とする
セラミツクス回路基板。 ２ アルミナ製基板の密度が3.65〜3.90ｇ／cm3で
ある特許請求の範囲第１項記載のセラミツクス回
路基板。[Claims] 1. Surface roughness (center line average roughness) of 0.1 to 0.6 μm
A ceramic circuit board characterized by having a copper plate directly bonded to one or both sides of an Ra alumina board by heating. 2. The ceramic circuit board according to claim 1, wherein the alumina substrate has a density of 3.65 to 3.90 g/cm 3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6425485A JPS61220836A (en) | 1985-03-28 | 1985-03-28 | Ceramics circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6425485A JPS61220836A (en) | 1985-03-28 | 1985-03-28 | Ceramics circuit substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61220836A JPS61220836A (en) | 1986-10-01 |
| JPH0575576B2 true JPH0575576B2 (en) | 1993-10-20 |
Family
ID=13252851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6425485A Granted JPS61220836A (en) | 1985-03-28 | 1985-03-28 | Ceramics circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220836A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166774A (en) * | 1986-12-27 | 1988-07-09 | 同和鉱業株式会社 | Manufacture of joined body of copper plate and alumina substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5237914A (en) * | 1975-07-30 | 1977-03-24 | Gen Electric | Method of directly combining metal to ceramics and metal |
| JPS5649588A (en) * | 1979-09-28 | 1981-05-06 | Tokyo Shibaura Electric Co | Method of forming thin film for ceramic substrate |
-
1985
- 1985-03-28 JP JP6425485A patent/JPS61220836A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5237914A (en) * | 1975-07-30 | 1977-03-24 | Gen Electric | Method of directly combining metal to ceramics and metal |
| JPS5649588A (en) * | 1979-09-28 | 1981-05-06 | Tokyo Shibaura Electric Co | Method of forming thin film for ceramic substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61220836A (en) | 1986-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |