JPH0575255A - Hybrid substrate and circuit module on which the substrate is mounted, and manufacture thereof - Google Patents

Abstract

PURPOSE:To shorten the manufacturing term of a module by forming a through- hole conductor on a ceramic substrate, a glass substrate or a glass ceramic substrate in a hybrid substrate and forming a thin-film multilayer circuit on the board or plate. CONSTITUTION:A conductive film 4 is formed on the rear of a heat-resistant glass substrate 1, and an etching mask 51 is formed on the surface. An etchant is sprayed against the surface of the substrate 1 and the peripheral section of the substrate 1 is removed and through-holes 6 are made, and the etching mask 51 is taken off. Copper conductors 7 are formed in the through-holes 6 of the substrate, and a conductor film 8 is formed on the surface of the substrate 1. An insulating film 5 is formed on the surface of the conductor film 8. An Al film is evaporated on the insulating film 5, and a photo-resist is applied, exposed and developed and wet etching is conducted. The insulating film as a wiring forming section and the photo-resist on Al are removed while using the Al as a mask and the Al film is taken off. Copper conductors 10 are grown in polyimide trenches machined.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit module and a hybrid substrate for the circuit module, particularly in electronic equipment.

[0002]

2. Description of the Related Art A conventional multilayer circuit board is disclosed in Japanese Patent Laid-Open No. 63-14.
As described in Japanese Patent No. 4599, a ceramic laminated substrate for a circuit module is mounted on a ceramic laminated substrate for wiring, and a thin film surface of Al, Cu, Au, etc. on a multilayer polyimide resin insulating layer of each ceramic laminated substrate, Alternatively, the plated wiring layer surface is aligned and soldered.
Further, in the above-mentioned multilayer circuit board, in order to reduce the wiring delay, the wiring width is widened or the wiring film thickness is increased. Further, in order to increase the wiring density, it is better to make the wiring thickness thicker than to widen the wiring width. Therefore, Cu or Au plating, which is easy to thicken, has been used for the wiring. Although the electroplating method has a higher film formation rate than electroless plating, it requires a process to keep all plated surfaces at the same potential, which increases the manufacturing time and reduces the yield. There was a drawback that

FIG. 12 is an example of a manufacturing process diagram of the conventional ceramic laminated substrate. In (1) of FIG. 12, a conductor film 4 for plating is formed on the lower surface of the substrate 1 by vapor deposition or the like, and a photoresist film on the surface of the substrate is exposed and developed to form an etching mask 51. As shown, the through hole 6 is processed to remove the etching mask 51. Next, in (3), the conductive film 4 is used as a negative electrode and the through-hole conductor 7 is electroplated. Next, as shown in (4), a conductor film 44 is formed on the entire upper surface of the substrate, and then an insulating film 52 as shown in (5) is formed on the conductor film 44. The copper conductor 45 for use is formed by electroplating. Then, unnecessary portions of the insulating film 52 and the conductor film 45 are removed as shown in (7), and the insulating film 53 is formed as shown in (8) to flatten the surface. In the case of forming a thin film multilayer circuit, the above steps (1) to (8) are repeated to form each thin film circuit one by one.
That is, it takes time and effort to newly form a conductor film for plating corresponding to the above 4 for each layer of the thin film circuit, thereby reducing the voltage drop due to the plating current and making the plating film thickness uniform.

[0004]

In the multilayer wiring board on which the above-mentioned conventional laminated board for module is mounted, as described in FIG. 12, a conductive film for a plating electrode is formed in each layer of the thin film circuit, and thereby, Since the conductor film is removed every time after the copper conductor for wiring is formed, there is a problem that the manufacturing time becomes longer and the yield decreases when the number of wiring layers increases. In addition, since a ceramic or glass-ceramic laminated board has many surface irregularities and internal voids, there is a problem in that the connection surface between the module laminated board and the multilayer wiring board is insufficiently aligned and a connection error occurs. there were. At the same time, the ceramic wiring board, the glass ceramic wiring board, or the like is misaligned with the through holes due to shrinkage due to sintering, which also causes a decrease in yield. Further, since the thick film multilayer circuit board is thick and heavy, a special handling device is required to form the thin film circuits one by one on top of this, and the workability is poor. An object of the present invention is to provide a multilayer wiring board mounting a module board and a method for manufacturing the same in which the above conventional problems are improved.

[0005]

In order to solve the above problems, a hybrid substrate mounted on a circuit module is a ceramic plate, a glass plate, a glass-ceramic plate, a silicon substrate, or at least one side and a through plate. -Ho-
The thin film multilayer circuit is formed on a metal substrate that is insulated from the inner surface of the semiconductor layer. Through holes are formed in these plates, and conductors are filled therein. This through-hole conductor serves as a lead wire to a plating electrode when forming a wiring by electroplating, and also serves as a conductor connecting the two when forming a circuit on both surfaces. Further, the thin film multilayer circuit may be provided on both surfaces of the hybrid substrate. Also,
The thermal expansion coefficient of the hybrid substrate is set to 6 ppm / K or less, and the thickness is set to 10 μm to 500 μm or less. Further, the wiring pattern of the thin film multilayer circuit of the hybrid substrate is formed of a conductor film and a conductor such as copper laminated on the conductor film, and further, the conductor is formed by electroplating, and the electroplating is performed. Is performed by connecting the conductor film to a plating electrode formed on one surface of the hybrid substrate through a through-hole conductor. Further, the conductor film is provided in the groove of the heat resistant organic insulating film. Also, the thin film circuits are sequentially laminated to manufacture a thin film multilayer circuit.

[0006]

In the present invention, a shaped or fired ceramic plate, a glass plate, or a glass-ceramic plate,
Alternatively, since a thin film multilayer circuit is formed on a silicon substrate or a metal substrate having at least one surface insulated from the inner surface of the through hole, misalignment of the through hole, external connection electrode portion, etc. It does not occur, and the finished hybrid substrate does not warp or twist. Further, since the coefficient of thermal expansion of the substrate is set to 6 ppm / K or less, mechanical strain applied to a silicon chip such as an LSI is reduced. Also,
Using the plating electrodes formed on one surface of the hybrid substrate, the wiring patterns of the thin-film multilayer circuit are sequentially formed on the other surface of the hybrid substrate.
Since it is formed by electroplating via a hole conductor, the complicated process of forming a plating electrode on the circuit surface every time one layer of wiring is formed and then removing the electrode after plating is no longer required as in the prior art. .. Further, the conductor of the wiring pattern is formed in the groove of the heat resistant organic insulating film forming each layer of the thin film multilayer circuit.

[0007]

EXAMPLE 1 FIG. 1 is a perspective view of a logic package in which a plurality of modules 28 according to the present invention are mounted on a printed board 29. A computer is configured by combining a storage package, an input / output processing package, and the like with this logical package. FIG. 2 is a partial sectional view of the module 28 of the present invention. The module 28 includes the hybrid substrate 100 on which the LSI 22 is mounted, the ceramic multilayer wiring substrate 13,
The Kovar sealing cap 2 which is in contact with the upper surface of the SI 22 and fixed to the ceramic multilayer wiring board 13 by the low temperature solder 24
5 and cooling fins 26 mounted on the sealing cap 25
Etc. The hybrid substrate 100 will be described in detail in the second embodiment.

The ceramic multilayer wiring board 13 is provided with five layers of alumina substrates 14, and via holes 15 are formed between the alumina substrates 14 in which through paste is filled with tungsten paste. The pitch of the via holes is 450 μm
Is. The inner layer wiring conductor 16 of tungsten paste is printed on the surface of each alumina substrate 14. The alumina substrates 14 are stacked on the basis of the guide holes formed at the four corners thereof, respectively, and are laminated by pressing at 120 ° C., and heated to 1600 ° C. in a hydrogen atmosphere to form the ceramic wiring substrate 13. Further, on the back surface of the ceramic multilayer wiring board 13, the high-temperature solder 20 is heated to about 410 ° C. and the pin 19 is connected and fixed.

Between the thin film circuit 2 of the hybrid substrate 100 and the ceramic multilayer wiring substrate 13, the gold-plated conductor 12 of the thin film circuit 2 is provided.
And the gold-plated conductor 17 on the surface of the ceramic multilayer wiring board 13
The intermediate and high temperature solders 18 are attached to and are heated to about 350 ° C. while being in contact with each other to be melted and electrically connected. Next, the hybrid substrate 10
Solder 21 is placed on the gold-plated conductor 9 on the substrate surface 1 such as 0 glass or ceramic material and heated to about 250 ° C.
SI22 is electrically connected and fixed. Next, the low temperature solder 2 is applied to the solder sealing portion 23 on the surface of the ceramic multilayer wiring board 13.
4 is placed and heated to about 200 ° C. to connect the Kovar sealing cap 25 to complete the electronic module. Also, LS
A heat-resistant rubber plate 27 having good heat conductivity is interposed between the I22 and the cooling fin 26.

In the prior art, a thin film circuit is also formed on the ceramic multilayer wiring substrate 13, and the thin film circuit and the thin film circuit 2 on the hybrid substrate 100 are stacked and soldered between them. Usually, the surface of a ceramic multilayer wiring board has minute irregularities, bubbles, and voids that are generated when multiple layers are sintered together, and these effects cause disconnection in the wiring layer of the thin-film circuit. There was a problem that the product was reduced and the yield was not increased. Also,
Since the firing conditions are determined by the balance between the ceramic multilayer wiring board material and the via-hole conductor material therein, air bubbles,
It was not possible to freely set the conditions for reducing voids.
On the other hand, in the present invention, the ceramic multilayer wiring board 13
Since the thin film circuit is not provided above, the problem of the thin film circuit disconnection can be avoided and the yield can be improved.

[Embodiment 2] FIG. 3 is a partial sectional view of a hybrid substrate 100. In FIG. 3, the substrate 1 is a glass substrate or a ceramic substrate having a good smoothness obtained by mechanically processing a through hole after sintering.
The thin film circuit 2 can be formed without being affected by voids and the like, and thus the yield can be greatly improved. Copper is used for the wiring material 3. Further, an external connection conductor 12, an LSI connection conductor 9, and a wiring correction / change conductor 42 are provided on the surface of the substrate.

FIGS. 4 and 5 are manufacturing process diagrams of the hybrid substrate 100. Below, process numbers (1) to (10)
Follow the instructions below. (1) Heat resistant glass substrate (coefficient of thermal expansion: 4.2 ppm /
K, dimensions: 100 mm × 100 mm × 1 mm) Cr is 0.05 μm on the back surface of 1 and Cu is 0.5 μm on it to form the conductive film 4. After forming a photoresist film on the surface of the substrate, it is exposed and developed to form an etching mask 51. (2) An HF-based etching solution is sprayed onto the surface of the substrate from the vertical direction to remove the peripheral portion of the substrate to form through holes 6 having a diameter of 0.15 mm at an average pitch of 0.45 mm, and then the etching mask 51 is removed. (3) A copper conductor 7 is formed in the substrate through hole 6 by electroplating using the conductive film 4 as a negative electrode.

(4) Deposit 0.05 μm of Cr and 0.5 μm of Cu on the entire surface of the substrate by sputtering. Photoresist is applied on this conductor film, pre-baked, and then exposed and developed to leave a portion where wiring is required.
The unnecessary portions of r and Cu are removed by etching to form the conductor film 8, and the resist is peeled off. (5) Applying polyimide varnish on the surface of the conductor film 8, spinner treatment, and bake treatment at 350 ° C. two times to obtain a film thickness of about 2
An insulating film 5 of 0 μm is formed. Then on the insulating film 5 about 4
Evaporate an Al film of μm and apply / expose photoresist.
Wet etching after development. Further, the insulating film corresponding to the wiring formation portion and the photoresist on Al are removed by a dry etching method using this Al as a mask. Then, the Al film is removed using an etching solution. (6) After the Cr film in the processed polyimide groove is removed with an etching solution, a negative electrode is connected to the conductive film 4 on the back surface of the substrate and the electroplating solution containing copper sulfate as a main component is added to the groove. A copper conductor 10 having a film thickness of 20 μm is grown.

The copper conductor 10 is formed to a thickness of about 5 μm by an electroless plating method, and electroplated thereon to a thickness of about 1 μm.
If it is formed to have a thickness of 5 μm, the wiring film thickness can be made uniform regardless of the location. When the electroplating is performed directly on the Cr and Cu underlayer films 4, the voltage drop due to the electrical resistance of the underlayer film causes plating at a portion near the negative electrode 4 and a portion far from the negative electrode 4. This film thickness difference can be reduced by reducing the electric resistance of the base film by the electroless plating. (7) Further, the second layer 11 on the layer (4) to (6)
It is manufactured by the same process as before. (8) The steps similar to the above (4) to (6) are repeated to form the thin film circuit 2 including all 11 layers. (9) The conductive film 4 formed on the back surface of the substrate is removed by wet etching, leaving the conductor 9 in a necessary portion. (10) Gold films 34 and 35 are formed on the conductor 9 on the back surface of the substrate and the conductor 12 on the front surface of the thin film circuit by electroless plating. As described above, the hybrid substrate 100 is formed.

[Embodiment 3] In Embodiment 2, the glass substrate 1 is used.
The thin film circuit 2 was formed only on the surface of. However, FIG.
As shown in, the thin film circuits 21 and 22 can be formed on both the front surface and the back surface of the glass substrate 1. Copper is used for the through-hole conductor 7 and the wiring material 3 of the substrate 1. In addition, a conductor 12 for external connection, an LSI connecting conductor 9,
Also, a wiring correction / change conductor 42 and the like are provided. The gold conductors 34 and 35 are Au films, respectively.

7 and 8 are manufacturing process diagrams of the hybrid substrate 101. Below, process numbers (1) to (10)
Follow the instructions below. The substrate 1 is a heat-resistant glass substrate (coefficient of thermal expansion: 2.5 ppm / K, dimensions: 100 mm x 1
00 mm × 1 mm) is used. Note that (1) to (6)
The process up to here is the same as that of the second embodiment, and therefore the description thereof is omitted. (7) A layer 11 (second layer) is formed on the copper conductor 10 by using nickel instead of copper in the same process as (4) to (6). (8) Next, the conductive film 4 formed on the back surface of the substrate is removed by etching or the like. Further, Cr is deposited to a thickness of 0.05 μm and Cu is deposited to a thickness of 0.5 μm on the entire surface of the thin film circuit surface by sputtering to form the conductive film 30.

(9) Similar to (4) of Example 2, Cr is deposited to a thickness of 0.05 μm and Cu is deposited to a thickness of 0.5 μm on the entire surface of the substrate by the sputtering method. Photoresist is applied on the conductor film and pre-baked, and then exposed and developed so as to leave a portion where wiring is required. After that, the Cr and Cu films are removed by using an etching solution to form the conductor film 31, and then the resist is peeled off. Polyimide varnish is applied thereon, spinner treatment and baking at 350 ° C. are repeated twice to form an insulating film 32 having a film thickness of about 20 μm. (10) After depositing an Al film of about 4 μm on the insulating film 32 by a vapor deposition method, applying, exposing and developing a photoresist,
1 is wet-etched. Further, by dry etching, the insulating film corresponding to the wiring formation portion and the photoresist on Al are removed using Al as a mask. Then, the Al film is removed using an etching solution.

(11) Cr in the processed polyimide groove
After removing the film with an etching solution, the conductive film 30 is connected to a negative electrode for electroplating, the substrate is put into an electroplating solution containing copper sulfate as a main component, and a copper conductor 33 having a film thickness of 20 μm is provided in the groove.
Grow. (12) The same steps as (9) to (11) above are repeated 10 times to form the thin film circuit 21 consisting of all 11 layers. (13) The conductive film 30 on the surface of the thin film substrate is removed by wet etching. Further, Au films 34 and 35 are formed on the conductors on the front and back surfaces of the substrate by electroless plating.

[Embodiment 4] FIG. 9 is a sectional view of another hybrid substrate 102 according to the present invention. A metal substrate 37 is used for the hybrid substrate 102, and thin film circuits 21 and 2 are provided on the front and back surfaces thereof.
Form 2. A Fernico plate covered with a polyimide film 36 is used for the metal substrate 37. Copper is used for the wiring material 3 and the through-hole conductor 7, and nickel is used for the conductors 9 and 42. On the surface of the substrate, there are provided an external connection conductor 12 whose surface is covered with Au films 34 and 35, an LSI connection conductor 9, and a wiring correction / change conductor 42.

FIG. 10 is a part of the manufacturing process diagram of the hybrid substrate 102. Below, process numbers (1) to (5)
Follow the instructions below. (1) A flat Fernico plate (coefficient of thermal expansion: 5.0 ppm / K, dimensions: 100 mm x 100 mm) on the metal substrate 37.
× 1 mm) is used. (2) Diameter of 0.2 on the metal substrate 37 by carbon dioxide laser
The 0 mm holes 38 are drilled on average 0.45 mm pitch. (3) A polyimide resin is printed and baked on the surface of this Fernico substrate to form an insulating film having a film thickness of about 20 μm. Further, a polyimide resin is printed on the back surface of the substrate, the printed surface is overlaid on the copper foil 39, and the polyimide resin is baked. By these operations, the polyimide resin penetrates and coats the hole 38. (4) The polyimide resin in the hole 38 is removed by an excimer laser to form the through hole 6. (5) Using the copper foil 39 on the back surface of the substrate as a negative electrode, copper is plated in the through holes 6 to grow the conductor 7. Then, the hybrid substrate and 21 and 22 are used in (3) to (4) of Example 3.
It is manufactured in the same manner as (13).

[Embodiment 5] FIG. 11 is a partial sectional view of another hybrid substrate 103 according to the present invention. In the hybrid substrate 103, the Si substrate 40 whose both surfaces are polished and oxidized and insulated is used.
The thin film circuit 2 is formed on the surface thereof. Copper is used for the through-hole conductor 7 and the wiring material 3 of the Si substrate. However, nickel is used for the conductors 42 and 42. An Au film 35 for external connection is provided on the surface of the through-hole conductor 7. Similarly, the Au film 34 for external connection is also provided on the surfaces of the LSI connecting conductor 9 and the wiring correcting / changing conductor 42.

This hybrid substrate 103 is manufactured by the following processes (1) to (18). (1) Si substrate 40 (coefficient of thermal expansion: 3 ppm / K, dimensions:
Au is vapor-deposited on the back surface of 102 mmφ × 1 mm). (2) 0.15 m diameter on the Si substrate 40 by ultrasonic processing
m holes (through holes) are made at an average pitch of 0.45 mm. (3) SiO 2 is formed on the surface of the Si substrate 40 and the through holes.
The insulating film is formed by thermal oxidation. (4) The surface of Au of the copper plate with Au vapor-deposited on the surface is
The copper plate and the Si substrate are adhered by closely contacting the surface of u and applying pressure and heat. (5) Using the copper plate as an electrode, the through hole of the Si substrate is plated with copper to form the through hole conductor 7.

The processes after (6) below are almost the same as those after (4) in the second embodiment. (6) Cr is sputtered on the surface of the Si substrate 40 by 0.05 μm, and Cu is deposited thereon by 0.5 μm. (7) Next, a negative type photosensitive resist is applied thereon and pre-baked, and then a portion where wiring is required is irradiated with light using a photomask and developed. (8) The Cr and Cu films in the portion where the resist is removed are removed by using an etching solution, and then the resist in the wiring portion is peeled off. (9) Next, apply polyimide varnish on it, spinner process, and bake at 350 ° C. twice, to obtain a film thickness of about 2
An insulating film of 0 μm is formed. (10) Deposit an Al film of about 4 μm on the insulating film. (11) Next, a negative type photosensitive resist is applied thereon and prebaked, and then a portion where wiring is required is irradiated with light using a photomask to be developed. (12) After removing the Al film in the removed resist using an etching solution, the resist in the wiring portion is removed.

(13) Next, this substrate is put into a dry etching apparatus, and the polyimide not covered with the Al film is removed by etching. At this time, the resist film on Al is also removed at the same time. (14) The Al film is removed using an etching solution. (15) The Cr film in the processed polyimide groove is removed with an etching solution. (16) An electrode for electroplating is connected to the copper plate portion of the substrate, the substrate is put into an electroplating solution containing copper sulfate as a main component, and copper having a film thickness of 20 μm is grown in the groove. (17) The thin film circuit 2 is formed by repeating the above processes (6) to (16). However, the layer 41 is formed by electroless plating of copper, and the conductors 9 and 42 are formed by Ni plating. (18) Approximately 400 ° C. between the Au film on the back surface of the Si substrate 40 and the copper plate
Heat to remove. (19) Gold is electrolessly plated on the connection pads on both front and rear surfaces of the substrate.

[Sixth Embodiment] An alumina substrate may be used as the substrate 1 in the second embodiment. For the through hole processing, conductor formation, etc. for the substrate 1, the following processes (1) to (4) are used. The other processes are similar to those in the second embodiment. (1) Alumina substrate (coefficient of thermal expansion: 6.
0 ppm / K, size: 100 mm x 100 mm x 1 m
m) holes having a diameter of 0.15 mm are machined at an average pitch of 0.45 mm. (2) A copper foil having a film thickness of about 20 μm is adhered to the back surface of the substrate using a polyimide varnish, and heat-treated in vacuum at 370 ° C. for 1 hour to be fixed. (3) By dry etching, the substrate surface is irradiated with oxygen ions or atoms to remove the polyimide in the through holes. (4) Copper is electroplated in the through-hole using the copper foil as a negative electrode to form a copper conductor. Thereafter, as described above, a hybrid substrate was manufactured in the same manner as in Example 1.

[Embodiment 7] In Embodiment 3, the substrate 1 is made of heat resistant glass having a thickness of 1 mm. This plate thickness is 100,3
When the thickness is made as thin as 00,500 μm (coefficient of thermal expansion: 4.2 ppm / K), the length of the through-hole conductor 7 becomes short, so that the wiring resistance can be reduced, and at the same time, the induced noise between the wirings can be reduced.

[Embodiment 8] The size of the heat-resistant glass substrate 1 (coefficient of thermal expansion: 4.2 ppm / K) of the above Embodiment 7 is set to 2
The size was reduced to 0 mm x 20 mm, and the plate thickness was 10, 5
Thin to 0,100 μm. As a result, the length of the through-hole conductor 7 is further shortened, so that wiring resistance, noise, etc. can be further reduced. The thick film substrate material used in each of the above embodiments of the present invention is not only alumina,
Ceramic materials such as mullite, glass ceramics composed of ceramic powder and glass, and glass can be used. In addition to tungsten, copper, etc. as the conductor material,
Molybdenum, nickel, silver / palladium, gold, platinum, etc. may be used. In addition to polyimide, a heat resistant resin such as Teflon can be used as the organic insulating material. In addition, a conductive paste can be used for the connection between the substrates, and a method such as heating, pressurizing, or ultrasonic fusion can be used.

[0028]

According to the present invention, the following effects can be obtained. (1) In the conventional module, since the thin film circuits are provided on both the ceramic multilayer wiring substrate 13 and the hybrid substrate 100, the manufacturing time is extremely long as a result of passing through the thin film process with long tact. Was becoming. On the other hand, in the present invention, since all of the above thin film circuits are integrated on the hybrid substrate, this can be manufactured separately from the ceramic multilayer wiring substrate and charged, and can be efficiently manufactured in consideration of the construction period. Therefore, the manufacturing period of the module 28 can be shortened.

(2) Further, in the wiring layer of the above-mentioned conventional thin film circuit, minute irregularities and bubbles on the surface of the ceramic multilayer wiring board,
It is possible to prevent the occurrence of disconnection due to voids or the like by collecting the thin film circuits on the ceramic multilayer wiring board on the hybrid board as described above. (3) Further, according to the present invention, since an alumina substrate, a ceramic substrate, a glass substrate, a glass ceramic substrate or the like whose surface is smoothed and fired is used for the hybrid substrate, when the thin film / pressure film circuit is formed thereon. In addition, there is no gas release from the substrate, so that the thin film / pressure film circuit can be formed with higher yield. (4) Further, since the above-mentioned baked substrate is less susceptible to the thermal strain due to the baking of the thin film multilayer circuit, the warp and undulation of the substrate are reduced, which can reduce the solder connection failure of the LSI and the solder breakage. it can. It is also possible to reduce the occurrence of peeling inside the thin film, defective disconnection, and the like.

(5) Also, insert into the above-mentioned baked substrate,
Since the position of the pin to be connected does not become out of alignment due to the baking of the thin film substrate, the pin position accuracy is improved. (6) Further, the electrode formed on one surface of the thin film substrate is used as a common negative electrode for plating, and the conductor patterns of the respective layers of the thin film multilayer circuit are sequentially electroplated, whereby the process of the thin film circuit is significantly shortened and the yield is improved. Can be improved. (7) Further, the yield of the whole can be improved by dividing the hybrid substrate of the present invention and manufacturing and inspecting it individually. In the conventional substrate, if there is a defect in any of the divided portions, the entire substrate is defective. Further, it is possible to avoid the increase of work in process by dividing each part of the hybrid substrate according to the yield or the manufacturing period to manufacture a highly difficult one early.

[Brief description of drawings]

FIG. 1 is an external view of a logic package including a module.

FIG. 2 is a partial cross-sectional view of a module using the hybrid substrate of the present invention.

FIG. 3 is a partial cross-sectional view of a hybrid substrate according to the present invention.

4 is a part of a manufacturing process diagram of the hybrid substrate shown in FIG.

5 is a part of a manufacturing process diagram of the hybrid substrate shown in FIG.

FIG. 6 is a partial cross-sectional view of a hybrid substrate of the present invention having thin film circuits formed on both sides.

FIG. 7 is a part of a manufacturing process diagram of the hybrid substrate shown in FIG.

8 is a part of a manufacturing process diagram of the hybrid substrate shown in FIG.

FIG. 9 is a partial cross-sectional view of a hybrid substrate of the present invention in which thin film circuits are formed on both surfaces of a metal substrate.

FIG. 10 is a part of a manufacturing process diagram of the hybrid substrate shown in FIG. 9;

FIG. 11 is a partial cross-sectional view of a hybrid substrate of the present invention in which a thin film circuit is formed on the surface of a Si substrate.

FIG. 12 is a part of a conventional manufacturing process diagram for forming a thin film circuit on a substrate surface.

[Explanation of symbols]

 1 Substrate 2 Thin film circuit 3 Wiring material 4 Conductive film 5 Insulating film 51 Etching mask 6 Through-hole 7 Through-hole conductor 8 Conductor film 9 Connection conductor 10 Copper conductor 11 Second layer 12 External connection conductor 13 Ceramic multilayer wiring Substrate 14 Alumina substrate 15 Via hole 16 Inner layer wiring conductor 17 Tungsten conductor 18 Medium high temperature solder 19 Pin 20 High temperature solder 21 Solder 22 LSI 23 Solder sealing part 24 Low temperature solder 25 Sealing cap 26 Cooling fin 27 Rubber plate 28 Module 29 Printed board 30 Conductive film 31 Conductor film 32 Insulating film 33 Copper conductor 34 Au film 36 Polyimide film 37 Fernico substrate 38 Hole 39 Copper foil 40 Si substrate 41 Thin film circuit intermediate layer 42 Wiring correction / change conductor

Continuation of the front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location H05K 3/46 N 6921-4E

Claims (10)

[Claims] 1. A hybrid substrate mounted on a circuit module, wherein the hybrid substrate is a ceramic plate or a glass plate,
Alternatively, a circuit module is characterized in that a through-hole conductor is formed on a glass / ceramic plate and a thin film multilayer circuit is provided on the plate. 2. A hybrid substrate to be mounted on a circuit module, wherein the hybrid substrate is provided with a thin film multilayer circuit on a metal substrate having at least one surface insulated from the inner surface of the through hole. Circuit module to do. 3. A hybrid substrate mounted on a circuit module, wherein the hybrid substrate is a silicon substrate on which a through-hole conductor is formed, and a thin film multilayer circuit is provided on the plate. Circuit module to do. 4. The method according to any one of claims 1 to 3,
A circuit module, wherein thin film multilayer circuits are provided on both surfaces of the substrate of the hybrid substrate. 5. The method according to any one of claims 1 to 4,
A circuit module, wherein the coefficient of thermal expansion of the substrate of the hybrid substrate is 6 ppm / K or less. 6. The circuit module according to claim 1, wherein the thickness of the hybrid substrate is 10 μm to 500 μm or less. 7. The method according to any one of claims 1 to 6,
A wiring pattern formed by a conductor film and a conductor such as copper laminated on the conductor film in the thin film multilayer circuit of the hybrid substrate.
Circuit module characterized by being equipped with
Le. 8. The circuit module according to claim 7, wherein a plating electrode is formed on one surface of the hybrid substrate, and the conductor film of the hybrid substrate and the plating electrode are connected via a through-hole conductor. Then, a negative voltage is applied to the plating electrode so that the conductor such as copper is plated and laminated on the conductor film to manufacture the circuit module. 9. The method of manufacturing a circuit module according to claim 8, wherein the conductor film of the hybrid substrate is provided in the groove of the heat resistant organic insulating film, and the conductor such as copper is plated on the conductor film. Circuit module characterized by being stacked
Manufacturing method. 10. The circuit module according to claim 9, wherein each layer of the thin film multilayer circuit of the hybrid substrate according to claim 1 is sequentially laminated by the method for manufacturing a circuit module according to claim 9. Manufacturing method.