JPH0574217B2 - - Google Patents

Info

Publication number
JPH0574217B2
JPH0574217B2 JP59117748A JP11774884A JPH0574217B2 JP H0574217 B2 JPH0574217 B2 JP H0574217B2 JP 59117748 A JP59117748 A JP 59117748A JP 11774884 A JP11774884 A JP 11774884A JP H0574217 B2 JPH0574217 B2 JP H0574217B2
Authority
JP
Japan
Prior art keywords
layer
laser
superlattice
manufacturing
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59117748A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60262417A (ja
Inventor
Naotaka Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59117748A priority Critical patent/JPS60262417A/ja
Publication of JPS60262417A publication Critical patent/JPS60262417A/ja
Publication of JPH0574217B2 publication Critical patent/JPH0574217B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H10P34/40—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
JP59117748A 1984-06-08 1984-06-08 半導体結晶の製造方法 Granted JPS60262417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59117748A JPS60262417A (ja) 1984-06-08 1984-06-08 半導体結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59117748A JPS60262417A (ja) 1984-06-08 1984-06-08 半導体結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60262417A JPS60262417A (ja) 1985-12-25
JPH0574217B2 true JPH0574217B2 (en:Method) 1993-10-18

Family

ID=14719333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59117748A Granted JPS60262417A (ja) 1984-06-08 1984-06-08 半導体結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60262417A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731338A (en) * 1986-10-09 1988-03-15 Amoco Corporation Method for selective intermixing of layered structures composed of thin solid films

Also Published As

Publication number Publication date
JPS60262417A (ja) 1985-12-25

Similar Documents

Publication Publication Date Title
US4190813A (en) Strip buried heterostructure laser
JP3791589B2 (ja) 端面非注入型半導体レーザおよびその製造方法
JPH0656906B2 (ja) 半導体レ−ザ装置
US5737351A (en) Semiconductor laser including ridge structure extending between window regions
US4270096A (en) Semiconductor laser device
US4269635A (en) Strip buried heterostructure laser
KR100232993B1 (ko) 반도체 레이저장치 및 그 제조방법
US6080598A (en) Method of producing semiconductor laser element with mirror degradation suppressed
JPS589389A (ja) 発光構体及びその製造方法
JPH0211027B2 (en:Method)
EP0422941B1 (en) Method of manufacturing a window structure semiconductor laser
JP2677232B2 (ja) 長波長半導体レーザおよびその製造方法
US5770471A (en) Method of making semiconductor laser with aluminum-free etch stopping layer
JP2001057459A (ja) 半導体レーザ
KR100634217B1 (ko) 전기 광학 반도체 장치 및 그 제조 방법
JPH0574217B2 (en:Method)
JP2629678B2 (ja) 半導体レーザ装置およびその製造方法
JPH01186688A (ja) 半導体レーザ装置
JPH0680860B2 (ja) 半導体結晶の製造方法
JPH05129721A (ja) 半導体レーザー及びその製造方法
CA1125897A (en) Strip buried heterostructure laser
JP3446343B2 (ja) Ｖ溝構造を有する半導体発光装置
JPH0665236B2 (ja) 半導体素子の製造方法
JPH0923039A (ja) 半導体レーザの製造方法
JP3446344B2 (ja) Ｖ溝構造を有する半導体発光装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term