JPH0573720B2 - - Google Patents

Info

Publication number
JPH0573720B2
JPH0573720B2 JP17724285A JP17724285A JPH0573720B2 JP H0573720 B2 JPH0573720 B2 JP H0573720B2 JP 17724285 A JP17724285 A JP 17724285A JP 17724285 A JP17724285 A JP 17724285A JP H0573720 B2 JPH0573720 B2 JP H0573720B2
Authority
JP
Japan
Prior art keywords
crucible
silicon nitride
quartz crucible
silicon
cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17724285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241793A (ja
Inventor
Mitsuhiro Yamato
Masayuki Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP17724285A priority Critical patent/JPS6241793A/ja
Publication of JPS6241793A publication Critical patent/JPS6241793A/ja
Publication of JPH0573720B2 publication Critical patent/JPH0573720B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Glass Melting And Manufacturing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP17724285A 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ Granted JPS6241793A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17724285A JPS6241793A (ja) 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17724285A JPS6241793A (ja) 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ

Publications (2)

Publication Number Publication Date
JPS6241793A JPS6241793A (ja) 1987-02-23
JPH0573720B2 true JPH0573720B2 (enrdf_load_stackoverflow) 1993-10-14

Family

ID=16027635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17724285A Granted JPS6241793A (ja) 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ

Country Status (1)

Country Link
JP (1) JPS6241793A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4781232B2 (ja) * 2006-11-07 2011-09-28 コバレントマテリアル株式会社 多結晶シリコンブロックの製造に用いられるシリコン溶融ルツボ
CN118109895B (zh) * 2024-04-30 2024-08-13 安徽壹石通材料科技股份有限公司 一种氮化硅/熔融石英复合坩埚及其制备方法与应用

Also Published As

Publication number Publication date
JPS6241793A (ja) 1987-02-23

Similar Documents

Publication Publication Date Title
JPH0695554B2 (ja) 単結晶マグネシアスピネル膜の形成方法
KR950034775A (ko) 반도체장치 및 그 제조방법
JP4108782B2 (ja) 核上に単結晶シリコンカーバイドを形成するための装置および方法
US4987016A (en) Component for producing semiconductor devices and process of producing it
US4424193A (en) Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
CA1244968A (en) Method of joining semiconductor substrates
JPH0573720B2 (enrdf_load_stackoverflow)
US5993902A (en) Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating
JPH03115188A (ja) 単結晶製造方法
JPS60251191A (ja) 高解離圧化合物単結晶成長方法
JPS5930792A (ja) 単結晶育成装置
JPH0782997B2 (ja) 半導体ウェーハの製造方法
JPH11292685A (ja) シリコンナイトライド被覆により単結晶シリコン成長用のグラファイトサセプタの寿命を延長するための装置および方法
JPS6226569B2 (enrdf_load_stackoverflow)
JPS6217496Y2 (enrdf_load_stackoverflow)
JPS63303886A (ja) 単結晶引上げ装置における酸化シリコン排出装置
USH28H (en) Chemical vapor deposition (CVD) of cubic silicon carbide SiC
JPH0519337Y2 (enrdf_load_stackoverflow)
JPS61291484A (ja) 黒鉛るつぼ
JP4154773B2 (ja) 単結晶製造方法および装置
JPS61117190A (ja) 結晶製造用ルツボ
JPS61106487A (ja) 単結晶成長装置
JP2532252B2 (ja) Soi基板の製造方法
JP2004107699A (ja) 保護膜の成膜方法及び同方法により保護膜を成膜した部材
JPH0214898A (ja) シリコン単結晶製造装置