JPS6241793A - シリコン単結晶引上げ用ルツボ - Google Patents

シリコン単結晶引上げ用ルツボ

Info

Publication number
JPS6241793A
JPS6241793A JP17724285A JP17724285A JPS6241793A JP S6241793 A JPS6241793 A JP S6241793A JP 17724285 A JP17724285 A JP 17724285A JP 17724285 A JP17724285 A JP 17724285A JP S6241793 A JPS6241793 A JP S6241793A
Authority
JP
Japan
Prior art keywords
crucible
silicon nitride
cylinder
single crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17724285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0573720B2 (enrdf_load_stackoverflow
Inventor
Mitsuhiro Yamato
充博 大和
Masayuki Tamura
正行 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP17724285A priority Critical patent/JPS6241793A/ja
Publication of JPS6241793A publication Critical patent/JPS6241793A/ja
Publication of JPH0573720B2 publication Critical patent/JPH0573720B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Glass Melting And Manufacturing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP17724285A 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ Granted JPS6241793A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17724285A JPS6241793A (ja) 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17724285A JPS6241793A (ja) 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ

Publications (2)

Publication Number Publication Date
JPS6241793A true JPS6241793A (ja) 1987-02-23
JPH0573720B2 JPH0573720B2 (enrdf_load_stackoverflow) 1993-10-14

Family

ID=16027635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17724285A Granted JPS6241793A (ja) 1985-08-12 1985-08-12 シリコン単結晶引上げ用ルツボ

Country Status (1)

Country Link
JP (1) JPS6241793A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008115056A (ja) * 2006-11-07 2008-05-22 Covalent Materials Corp シリコン溶融ルツボおよびこれに用いる離型材
CN118109895A (zh) * 2024-04-30 2024-05-31 安徽壹石通材料科技股份有限公司 一种氮化硅/熔融石英复合坩埚及其制备方法与应用

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008115056A (ja) * 2006-11-07 2008-05-22 Covalent Materials Corp シリコン溶融ルツボおよびこれに用いる離型材
CN118109895A (zh) * 2024-04-30 2024-05-31 安徽壹石通材料科技股份有限公司 一种氮化硅/熔融石英复合坩埚及其制备方法与应用
CN118109895B (zh) * 2024-04-30 2024-08-13 安徽壹石通材料科技股份有限公司 一种氮化硅/熔融石英复合坩埚及其制备方法与应用

Also Published As

Publication number Publication date
JPH0573720B2 (enrdf_load_stackoverflow) 1993-10-14

Similar Documents

Publication Publication Date Title
JP4108782B2 (ja) 核上に単結晶シリコンカーバイドを形成するための装置および方法
JPS6241793A (ja) シリコン単結晶引上げ用ルツボ
US5993902A (en) Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating
JPH03115188A (ja) 単結晶製造方法
JPS5930792A (ja) 単結晶育成装置
JPH0733307B2 (ja) 単結晶成長装置
KR100544778B1 (ko) 질화붕소층이 피복된 열실드가 구비된 실리콘 단결정 잉곳성장장치
JPH11292685A (ja) シリコンナイトライド被覆により単結晶シリコン成長用のグラファイトサセプタの寿命を延長するための装置および方法
JP2002308693A (ja) 蒸気制御されたチョクラルスキー(vcz)単結晶成長装置
JPS63303886A (ja) 単結晶引上げ装置における酸化シリコン排出装置
JPS62223090A (ja) 半導体単結晶引上装置
JP2706272B2 (ja) 化合物半導体単結晶の成長方法
JP2665778B2 (ja) 半導体単結晶引上げ装置
JPS6217496Y2 (enrdf_load_stackoverflow)
JP2641387B2 (ja) 化合物半導体の結晶成長方法及び結晶成長装置
JP4155085B2 (ja) 化合物半導体単結晶の製造方法
JPS61106487A (ja) 単結晶成長装置
JPS61117190A (ja) 結晶製造用ルツボ
JPS61291484A (ja) 黒鉛るつぼ
JPS5632396A (en) Silicon single crystal pulling apparatus
JPH04160090A (ja) 半導体単結晶引上装置の黒鉛ルツボ
JPS61180428A (ja) 半導体液相エピタキシヤル成長装置
JPS62171984A (ja) 結晶製造装置
JPS63195189A (ja) 単結晶の製造装置
JPS6163594A (ja) 単結晶製造装置