JPH057251Y2 - - Google Patents
Info
- Publication number
- JPH057251Y2 JPH057251Y2 JP3379188U JP3379188U JPH057251Y2 JP H057251 Y2 JPH057251 Y2 JP H057251Y2 JP 3379188 U JP3379188 U JP 3379188U JP 3379188 U JP3379188 U JP 3379188U JP H057251 Y2 JPH057251 Y2 JP H057251Y2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- shutter
- source
- epitaxial growth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3379188U JPH057251Y2 (enrdf_load_stackoverflow) | 1988-03-16 | 1988-03-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3379188U JPH057251Y2 (enrdf_load_stackoverflow) | 1988-03-16 | 1988-03-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0222371U JPH0222371U (enrdf_load_stackoverflow) | 1990-02-14 |
| JPH057251Y2 true JPH057251Y2 (enrdf_load_stackoverflow) | 1993-02-24 |
Family
ID=31260496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3379188U Expired - Lifetime JPH057251Y2 (enrdf_load_stackoverflow) | 1988-03-16 | 1988-03-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH057251Y2 (enrdf_load_stackoverflow) |
-
1988
- 1988-03-16 JP JP3379188U patent/JPH057251Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0222371U (enrdf_load_stackoverflow) | 1990-02-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2130252A (en) | An effusion evaporation cell for an apparatus for vacuum coating by evaporation | |
| JPH0834180B2 (ja) | 化合物半導体薄膜の成長方法 | |
| JPH01135529A (ja) | 電磁放射を用いる物体表面の修飾方法 | |
| JPH057251Y2 (enrdf_load_stackoverflow) | ||
| CN100388424C (zh) | 分子束外延生长设备和控制它的方法 | |
| GB2170043A (en) | Apparatus for the growth of semiconductor crystals | |
| KR20170056326A (ko) | 진공증착기용 매니퓰레이터 | |
| JPH05887A (ja) | 分子線結晶成長装置 | |
| JPH03142921A (ja) | ３―５族化合物半導体薄膜製造装置 | |
| JP2719283B2 (ja) | 低温用クヌ−ドセンセル | |
| JP2778137B2 (ja) | 薄膜形成方法及びその装置 | |
| JPH034516A (ja) | 分子線源 | |
| JPH0527501Y2 (enrdf_load_stackoverflow) | ||
| JPH06263587A (ja) | 分子線エピタキシャル成長装置 | |
| JPH0516399B2 (enrdf_load_stackoverflow) | ||
| JPS61186472A (ja) | 蒸着非結晶膜製造装置 | |
| JPS6358918A (ja) | 分子線源用フア−ネスシヤツタ | |
| JPH03150290A (ja) | 結晶成長装置 | |
| JPS62287616A (ja) | 分子線エピタキシヤル装置のシヤツタ構造 | |
| JPH04317495A (ja) | 分子線エピタキシャル成長方法および成長装置 | |
| JPS6120513B2 (enrdf_load_stackoverflow) | ||
| JPH0138910Y2 (enrdf_load_stackoverflow) | ||
| JPH04111730U (ja) | 分子線エピタキシイ装置 | |
| JPS63122211A (ja) | 分子線発生装置 | |
| JPH03247589A (ja) | 分子線結晶成長装置 |