JPH057251Y2 - - Google Patents

Info

Publication number

JPH057251Y2

JPH057251Y2 JP3379188U JP3379188U JPH057251Y2 JP H057251 Y2 JPH057251 Y2 JP H057251Y2 JP 3379188 U JP3379188 U JP 3379188U JP 3379188 U JP3379188 U JP 3379188U JP H057251 Y2 JPH057251 Y2 JP H057251Y2

Authority

JP

Japan

Prior art keywords

molecular beam

shutter

source

epitaxial growth

substrate

Prior art date

1988-03-16

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

Links

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• 238000010438 heat treatment Methods 0.000 claims description 19
• 239000000758 substrate Substances 0.000 claims description 15
• 230000007246 mechanism Effects 0.000 claims description 5
• 239000013078 crystal Substances 0.000 claims description 4
• 239000010409 thin film Substances 0.000 claims description 4
• 239000004065 semiconductor Substances 0.000 description 7
• 230000001678 irradiating effect Effects 0.000 description 5
• JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
• 150000001875 compounds Chemical class 0.000 description 4
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
• 230000000694 effects Effects 0.000 description 3
• 230000008018 melting Effects 0.000 description 3
• 238000002844 melting Methods 0.000 description 3
• 239000002994 raw material Substances 0.000 description 3
• GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 238000010894 electron beam technology Methods 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 229910052715 tantalum Inorganic materials 0.000 description 2
• GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
• 108010083687 Ion Pumps Proteins 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 230000015271 coagulation Effects 0.000 description 1
• 238000005345 coagulation Methods 0.000 description 1
• 239000000470 constituent Substances 0.000 description 1
• 230000008021 deposition Effects 0.000 description 1
• 230000006866 deterioration Effects 0.000 description 1
• 230000008020 evaporation Effects 0.000 description 1
• 238000001704 evaporation Methods 0.000 description 1
• 239000010408 film Substances 0.000 description 1
• 229910052732 germanium Inorganic materials 0.000 description 1
• GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
• 239000012535 impurity Substances 0.000 description 1
• 239000007791 liquid phase Substances 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 230000003287 optical effect Effects 0.000 description 1
• 230000005855 radiation Effects 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 239000000344 soap Substances 0.000 description 1