JPH0516399B2 - - Google Patents
Info
- Publication number
- JPH0516399B2 JPH0516399B2 JP7779888A JP7779888A JPH0516399B2 JP H0516399 B2 JPH0516399 B2 JP H0516399B2 JP 7779888 A JP7779888 A JP 7779888A JP 7779888 A JP7779888 A JP 7779888A JP H0516399 B2 JPH0516399 B2 JP H0516399B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- evaporation
- evaporation source
- growth chamber
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001704 evaporation Methods 0.000 claims description 89
- 230000008020 evaporation Effects 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 19
- 229910021478 group 5 element Inorganic materials 0.000 claims description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63077798A JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
DE68926577T DE68926577T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
EP89105248A EP0335267B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
EP92117113A EP0529687B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
DE68916457T DE68916457T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie. |
TW080105276A TW202485B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-03-30 | 1989-03-24 | |
US07/329,313 US4944246A (en) | 1988-03-30 | 1989-03-27 | Molecular beam epitaxy apparatus |
CA000594977A CA1333038C (en) | 1988-03-30 | 1989-03-29 | Molecular beam epitaxy apparatus |
KR1019890004152A KR930010750B1 (ko) | 1988-03-30 | 1989-03-30 | 분자선 에피택시 장치 |
CA000616594A CA1333039C (en) | 1988-03-30 | 1993-03-30 | Molecular beam epitaxy apparatus |
KR1019930013044A KR930010751B1 (ko) | 1988-03-30 | 1993-07-09 | 분자선 에피택시 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63077798A JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01249692A JPH01249692A (ja) | 1989-10-04 |
JPH0516399B2 true JPH0516399B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-04 |
Family
ID=13644020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63077798A Granted JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01249692A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111304623A (zh) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | 一种超高真空进样与样品处理两用系统及处理方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2323209A (en) * | 1997-03-13 | 1998-09-16 | Sharp Kk | Molecular beam epitaxy apparatus and method |
US12080571B2 (en) * | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
-
1988
- 1988-03-30 JP JP63077798A patent/JPH01249692A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111304623A (zh) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | 一种超高真空进样与样品处理两用系统及处理方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH01249692A (ja) | 1989-10-04 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |