JPH0571559B2 - - Google Patents
Info
- Publication number
- JPH0571559B2 JPH0571559B2 JP6998088A JP6998088A JPH0571559B2 JP H0571559 B2 JPH0571559 B2 JP H0571559B2 JP 6998088 A JP6998088 A JP 6998088A JP 6998088 A JP6998088 A JP 6998088A JP H0571559 B2 JPH0571559 B2 JP H0571559B2
- Authority
- JP
- Japan
- Prior art keywords
- inner container
- container
- heater
- single crystal
- vapor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 39
- 239000010453 quartz Substances 0.000 claims description 17
- 239000000565 sealant Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 11
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910021478 group 5 element Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 238000007789 sealing Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、単結晶成長装置に係り、特に高解離
圧化合物半導体単結晶を成長させる単結晶成長装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a single crystal growth apparatus, and particularly to a single crystal growth apparatus for growing a high dissociation pressure compound semiconductor single crystal.
［従来の技術］
一般に、GaAs、GaP、InAs、InP等の高解離
圧化合物半導体単結晶の育成においては、As、
Ｐ等の蒸気圧の高いＶ族元素が、原料融液および
育成中の結晶表面から解離し易く、これを防止す
る方法として、液体封止チヨクラルスキー法
（LEC法）が用いられている。このLEC法は、る
つぼ中の原料融液をB2O3等の液体封止剤で封止
し、不活性ガスによつて液体封止剤に高圧を加え
ながら結晶の引上げを行なう方法であり、原料融
液からの揮発性元素の蒸発は有効に抑制される。
ところが、高圧下で結晶の引上げを行なうため、
ガスの対流により、炉内温度が不安定になるとと
ともに、結晶育成環境に温度差を生じ易く、引上
げ結晶の高転位化が問題となつていた。また、液
体封止剤上部は高温になつているため、育成中の
結晶は、液体封止剤上部において表面分解を起こ
し、引上げ結晶内部の転位増殖が問題となつてい
た。[Prior Art] Generally, in the growth of high dissociation pressure compound semiconductor single crystals such as GaAs, GaP, InAs, and InP, As,
Group V elements such as P, which have a high vapor pressure, tend to dissociate from the raw material melt and the surface of the growing crystal, and the liquid confinement Czyochralski method (LEC method) is used as a method to prevent this. This LEC method is a method in which the raw material melt in a crucible is sealed with a liquid sealant such as B 2 O 3 , and the crystals are pulled up while applying high pressure to the liquid sealant with an inert gas. , evaporation of volatile elements from the raw material melt is effectively suppressed.
However, since the crystal is pulled under high pressure,
Gas convection makes the temperature inside the furnace unstable and tends to cause temperature differences in the crystal growth environment, causing a problem of high dislocations in the pulled crystal. Furthermore, since the upper part of the liquid sealant is at a high temperature, the growing crystal undergoes surface decomposition at the upper part of the liquid sealant, causing a problem of dislocation multiplication inside the pulled crystal.
そこで、近年、上記問題点を解決して表面分解
のない低転位結晶を育成すべく、蒸気圧制御法と
呼ばれる結晶引上げ法が行なわれている。この蒸
気圧制御法は、高耐圧容器からなる外側容器内に
小型の密閉容器からなる内側容器を設け、この内
側容器内で結晶育成を行なう方法で、内側容器内
にＶ族元素蒸気圧を充分に印加することによつ
て、原料融液および育成中の結晶表面からＶ族元
素の解離を防ぐものである。 Therefore, in recent years, a crystal pulling method called a vapor pressure control method has been used to solve the above problems and grow a low dislocation crystal without surface decomposition. This vapor pressure control method is a method in which an inner container made of a small airtight container is provided inside an outer container made of a high pressure resistant container, and crystal growth is performed within this inner container to maintain a sufficient vapor pressure of group V elements in the inner container. By applying this, it is possible to prevent the dissociation of Group V elements from the raw material melt and the surface of the growing crystal.
蒸気圧制御法において重要なことは、内側容器
の密閉性を向上させて内部に印加したＶ族元素の
容器外部への漏れを有効に防止することである。
このため、内側容器を石英製の一体物により形成
する方法や石英製の内側容器を分割可能にし、接
合部にシール剤を設けて応力を加えることにより
密着させる方法等が行なわれている。しかし、内
側容器の密閉性が良好であつても、内側容器内に
Ｖ族元素気体を印加する際に内側容器内部や表面
に低温部が存在すると、その低温部分にＶ族元素
が析出してしまい、Ｖ族元素蒸気圧が低くなつ
て、精密な蒸気圧制御が困難になつてしまう。 What is important in the vapor pressure control method is to improve the sealing performance of the inner container to effectively prevent the Group V element applied inside from leaking to the outside of the container.
For this reason, methods have been used in which the inner container is made of a single piece made of quartz, or the inner container made of quartz is made separable, and a sealing agent is provided at the joint portion to apply stress to bring them into close contact. However, even if the inner container has good airtightness, if there is a low-temperature part inside or on the surface of the inner container when group V element gas is applied to the inner container, group V elements will precipitate in that low-temperature part. As a result, the vapor pressure of group V elements becomes low, making precise vapor pressure control difficult.
そこで、従来は、例えば特開昭60−255692号公
報、特開昭60−264390号公報等に開示されるよう
に、内側容器上部および下部の外側にそれぞれ内
側容器外周を囲繞する円筒状のヒータを配設し、
内側容器表面を加熱する構成をとつていた。 Therefore, conventionally, as disclosed in, for example, JP-A No. 60-255692 and JP-A No. 60-264390, cylindrical heaters have been installed outside the upper and lower parts of the inner container, respectively, to surround the outer periphery of the inner container. and
It was designed to heat the surface of the inner container.
［発明が解決しようとする課題］
しかしながら、上記従来の単結晶成長装置で
は、ヒータが円筒状であるので、高さ方向中央の
ヒータ発熱部中心が、上下両端部に比べて高温と
なり、高さ方向で温度差を生じてしまつた。すな
わち、内側容器のヒータ発熱部中心に対向する部
分のみが局部的に加熱されてしまい、内側容器全
体の均一な温度制御が困難となつて、Ｖ族元素蒸
気圧の制御を精密かつ適切に行なうことができな
かつた。また、通常、ヒータは内側容器との間に
〓間をもつて配設されているので、ガスの対流に
よる熱の逃げが生じ、これによつても均一な温度
制御ができなかつた。[Problems to be Solved by the Invention] However, in the conventional single crystal growth apparatus described above, since the heater is cylindrical, the center of the heating part of the heater at the center in the height direction becomes hotter than the upper and lower ends, and the height increases. A temperature difference occurred depending on the direction. In other words, only the portion of the inner container facing the center of the heater heat generating portion is locally heated, making it difficult to control the temperature uniformly throughout the inner container, making it difficult to precisely and appropriately control the vapor pressure of group V elements. I couldn't do it. Furthermore, since the heater is usually disposed with a gap between it and the inner container, heat escapes due to gas convection, which also makes it impossible to control the temperature uniformly.
本発明は、かかる従来の問題点に鑑みてなされ
たもので、内側容器の均一な温度制御をできるよ
うにし、内側容器内の精密かつ適切な蒸気圧制御
を可能とした単結晶成長装置を提供することを目
的とする。 The present invention has been made in view of such conventional problems, and provides a single crystal growth apparatus that enables uniform temperature control of the inner container and precise and appropriate vapor pressure control within the inner container. The purpose is to
［課題を解決するための手段］
上記目的を達成するため、本発明は外側容器内
に上下に分割可能な内側容器を設け、この内側容
器外側にヒータを配設し、内側容器下部内にるつ
ぼを配設するとともに、そのるつぼ中に原料溶液
および液体封止剤を設け、高解離圧化合物半導体
単結晶を成長させる単結晶成長装置において、内
側容器上部を石英で形成するとともに、線ヒータ
を具備した石英管を内側容器上部外周に接合した
ものである。[Means for Solving the Problems] In order to achieve the above object, the present invention provides an inner container which can be divided into upper and lower parts inside the outer container, a heater is arranged outside the inner container, and a crucible is installed in the lower part of the inner container. In this single crystal growth apparatus, the upper part of the inner container is made of quartz and is equipped with a wire heater. A quartz tube is attached to the outer periphery of the upper part of the inner container.
［作用］
かかる構成の単結晶成長装置においては、線ヒ
ータを具備した石英管が、石英製の内側容器上部
外周に溶接等により直接接合されているので、内
側容器上部を所定温度に均一制御することがで
き、内側容器内の蒸気圧制御が精密かつ適切に行
なわれる。[Function] In the single crystal growth apparatus having such a configuration, the quartz tube equipped with the wire heater is directly joined to the outer periphery of the upper part of the inner container made of quartz by welding or the like, so that the upper part of the inner container can be uniformly controlled to a predetermined temperature. The steam pressure inside the inner container can be precisely and appropriately controlled.
［実施例］
以下、本発明を図に示す一実施例に基づき詳細
に説明する。[Example] Hereinafter, the present invention will be described in detail based on an example shown in the drawings.
本発明の単結晶成長装置は、例えば第１図に示
すように、両端を閉塞した円筒状の高耐圧容器か
らなる外側容器１内には、上下に分割可能な略円
筒状の密閉容器からなる内側容器２が設けられて
いる。内側容器上部２ａと内側容器下部２ｂと
は、摺り合わせにより接合されており、内側容器
下部２ｂは、石英、ガス不透過性グラフアイトま
たは高融点金属等のガス不透過性を有しかつ高温
下で使用可能な材料により形成されている。ま
た、内側容器下部２ｂの外周には、ヒータ３が内
側容器下部２ｂ外周を囲繞して配設されている。 In the single crystal growth apparatus of the present invention, as shown in FIG. 1, for example, an outer container 1 is a cylindrical high-pressure resistant container with both ends closed, and an approximately cylindrical sealed container that can be divided into upper and lower parts is provided. An inner container 2 is provided. The inner container upper part 2a and the inner container lower part 2b are joined by rubbing together, and the inner container lower part 2b is made of gas-impermeable material such as quartz, gas-impermeable graphite, or high-melting point metal, and is made of gas-impermeable material such as quartz, gas-impermeable graphite, or high-melting point metal. It is made of materials that can be used in Further, a heater 3 is disposed on the outer periphery of the inner container lower part 2b so as to surround the outer periphery of the inner container lower part 2b.
一方、内側容器上部２ａは、第２図および第３
図に示すように、石英製のベルジヤーからなり、
その外周には、線ヒータ４を内装した石英管５が
螺旋状に巻装されている。ここに、内側容器上部
２ａ外周と石英管５とは、内側容器上部２ａの外
周に複数箇所設けた突起６において点溶接により
接合されている。 On the other hand, the inner container upper part 2a is
As shown in the figure, it consists of a quartz bell gear.
A quartz tube 5 containing a wire heater 4 is wound spirally around its outer periphery. Here, the outer periphery of the inner container upper part 2a and the quartz tube 5 are joined by spot welding at projections 6 provided at a plurality of locations on the outer periphery of the inner container upper part 2a.
また、内側容器２内には、外側容器１外方から
それぞれ上軸７および下軸８が気密に導入されて
いる。上軸７と下軸８とは、同軸上に設けられ、
それぞれ昇降かつ回転自在に設けられている。上
軸７の内端部は、種結晶９を支持できるようにな
つており、下軸８の内端部には、サセプタ１０が
固着されている。このサセプタ１０は、原料融液
（半導体用材料）１１および液体封止剤１２を入
れたるつぼ１３を支持可能に形成されている。 Further, an upper shaft 7 and a lower shaft 8 are introduced into the inner container 2 from outside the outer container 1 in an airtight manner. The upper shaft 7 and the lower shaft 8 are coaxially provided,
Each is provided so that it can be raised and lowered and rotated freely. The inner end of the upper shaft 7 is adapted to support a seed crystal 9, and the inner end of the lower shaft 8 is fixed to a susceptor 10. This susceptor 10 is formed to be able to support a crucible 13 containing a raw material melt (semiconductor material) 11 and a liquid sealant 12.
上軸７と内側容器上部２ａとは、上軸７が摺り
あわせ構造で挿通されたシールアダプタ１４によ
り気密にシールされている。また、下軸８と内側
容器下部２ｂとは、下軸８外周に環装固着された
シール容器１５内にシール剤１６を収容し、内側
容器下部２ｂに取付けた円移管状のアダプタ１７
の下端部をシール剤１６中に浸すことによつて、
気密にシールされている。ここで、シール容器１
５およびアダプタ１７は、それぞれ耐熱性を有し
かつシール剤１６との濡れ性の悪い材料、例えば
金属等により形成されている。また、シール剤１
６の溶解は、ヒータ３の加熱による、内側容器下
部２ｂの加熱、原料融液１１および液体封止剤１
３の加熱溶解時に、外側容器１内の温度が上昇す
ることによつて行なわれる。 The upper shaft 7 and the inner container upper part 2a are hermetically sealed by a seal adapter 14 into which the upper shaft 7 is inserted in a sliding structure. The lower shaft 8 and the inner container lower part 2b are connected to each other, and a sealing agent 16 is contained in a seal container 15 fixed to the outer periphery of the lower shaft 8, and a circular transfer-shaped adapter 17 is attached to the inner container lower part 2b.
By immersing the lower end in the sealant 16,
Hermetically sealed. Here, seal container 1
5 and the adapter 17 are each made of a material having heat resistance and poor wettability with the sealant 16, such as metal. In addition, sealant 1
6 is melted by heating the inner container lower part 2b by heating the heater 3, and melting the raw material melt 11 and the liquid sealant 1.
This is done by increasing the temperature inside the outer container 1 during the heating and melting of step 3.
さらに、内側容器下部２ｂの底部には、内側容
器２内と連通する蒸気圧調整容器１８が取付けら
れており、この蒸気圧調整容器１８内には、揮発
性のＶ族元素からなる揮発性材料１９が収容され
ている。また、揮発性材料１９が収容された蒸気
圧調整容器１８の外周には、ヒータ２０が配設さ
れている。 Furthermore, a vapor pressure adjustment container 18 that communicates with the inside of the inner container 2 is attached to the bottom of the inner container lower part 2b, and a volatile material made of a volatile Group V element is contained in the vapor pressure adjustment container 18. 19 are accommodated. Further, a heater 20 is disposed around the outer periphery of the vapor pressure adjustment container 18 containing the volatile material 19.
なお、上記構成の単結晶成長装置では、ヒータ
３の加熱により、外側容器１内の温度が十分に高
くなり、シール容器１５内のシール剤１６が溶解
した時、下軸８を上昇させてアダプタ１７の下端
部をシール剤１６中に浸して下軸８のシールを行
なう。また、これと同時に、上軸７もシールアダ
プタ１４に挿通して上軸７のシールも行ない、内
側容器２内を密閉状態にする。その後、ヒータ２
０の加熱により、蒸気圧調整容器１８内の揮発性
材料１９を揮発させ、内側容器２内に揮発性材料
１９の蒸気を充満させる。また、これと同時に、
内側容器上部２ａに設けた石英管５内の線ヒータ
４に通電し、内側容器上部２ａ全体を均一に加熱
する。 In the single crystal growth apparatus having the above configuration, when the temperature inside the outer container 1 becomes sufficiently high due to heating by the heater 3 and the sealing agent 16 inside the sealing container 15 melts, the lower shaft 8 is raised to remove the adapter. The lower end of the shaft 17 is immersed in the sealant 16 to seal the lower shaft 8. At the same time, the upper shaft 7 is also inserted into the seal adapter 14 to seal the upper shaft 7, thereby bringing the inside of the inner container 2 into a sealed state. After that, heater 2
By heating at 0, the volatile material 19 in the vapor pressure adjustment container 18 is volatilized, and the inner container 2 is filled with the vapor of the volatile material 19. Also, at the same time,
The wire heater 4 in the quartz tube 5 provided in the upper part 2a of the inner container is energized to uniformly heat the entire upper part 2a of the inner container.
本実施例の単結晶成長装置により、次のように
して、GaAs単結晶の育成を行なつた。 Using the single crystal growth apparatus of this example, GaAs single crystals were grown in the following manner.
まず、るつぼ１３内に高純度（7N）のGa、As
からなる原料１１およびB2OO3からなる液体封
止剤１２を入れた。そして、このるつぼ１３を下
軸８内端部に設けたサセプタ１０上に載置した。
また、蒸気圧調整容器１８内には、高純度（7N）
のAsを約150ｇ収納するとともに、シール容器１
５内には、B2O3からなるシール剤１６を収納し
た。 First, high purity (7N) Ga and As were placed in the crucible 13.
A raw material 11 consisting of B 2 OO 3 and a liquid sealant 12 consisting of B 2 OO 3 were added. Then, this crucible 13 was placed on a susceptor 10 provided at the inner end of the lower shaft 8.
In addition, high purity (7N) is contained in the vapor pressure adjustment vessel 18.
In addition to storing approximately 150g of As, a sealed container 1
A sealant 16 made of B 2 O 3 was housed in the container 5 .
次に、内側容器上部２ａを内側容器下部２ｂ上
に載置して接合した後、外側容器１を密閉して内
部を真空排気し、その後Arガスで内部を加圧す
るとともに、ヒータ３により加熱を開始した。最
初に、るつぼ１３内の液体封止剤１２が融けて原
料１１のGa、Asを封止し、次にGaとAsとが反
応してGaAsとなり、さらに昇温するとGaAsが
融けて液体となつた。この時点で、外側容器１内
の温度上昇により、シール容器１５内のシール剤
１６が融けたので、下軸８を上昇させ、アダプタ
１７の下端部をシール剤１６中に浸し、下軸８と
内側容器下部２ｂとのシールを行なうとともに、
同時に上軸７を下降させたシールアダプタ１４に
挿通し、上軸７と内側容器上部２ａとのシールを
行なつた。 Next, after placing the inner container upper part 2a on the inner container lower part 2b and joining them, the outer container 1 is sealed and the inside is evacuated, and then the inside is pressurized with Ar gas and heated with the heater 3. It started. First, the liquid sealant 12 in the crucible 13 melts and seals the Ga and As of the raw material 11, then Ga and As react to form GaAs, and when the temperature is further increased, GaAs melts and becomes a liquid. Ta. At this point, the sealant 16 in the seal container 15 has melted due to the temperature rise in the outer container 1, so the lower shaft 8 is raised, the lower end of the adapter 17 is immersed in the sealant 16, and the lower shaft 8 and While sealing with the inner container lower part 2b,
At the same time, the upper shaft 7 was inserted into the lowered seal adapter 14 to seal the upper shaft 7 and the inner container upper part 2a.
その後、ヒータ２０の加熱を開始し、蒸気圧調
整容器１８内の揮発性材料１９を揮発さて、内側
容器２内にAs蒸気を充満させた。そして、上軸
７および下軸８を駆動させ、上軸７の内端部に設
けた種結晶９を原料融液１１中に浸し、上軸７と
下軸８とを相対的に回転させながら、結晶の引上
げを行ない、３インチのGaAs単結晶を育成し
た。 Thereafter, heating by the heater 20 was started to volatilize the volatile material 19 in the vapor pressure adjustment container 18, and the inner container 2 was filled with As vapor. Then, the upper shaft 7 and the lower shaft 8 are driven, and the seed crystal 9 provided at the inner end of the upper shaft 7 is immersed in the raw material melt 11, while the upper shaft 7 and the lower shaft 8 are rotated relatively. , the crystal was pulled and a 3-inch GaAs single crystal was grown.
このようにして得られた育成結晶は、表面分解
が全くなく、結晶育成中、内側容器２内には十分
なAs蒸気圧が印加されていたことが判つた。こ
れは、内側容器上部２ａ全体を均一に温度制御で
きたことによるものである。また、上記育成結晶
の結晶内部の転位密度を調べたところ、30000cm
-2以下であつた。これに対し、従来法により育成
した結晶の転位密度は、30000〜10000cm-2であ
り、上記実施例の装置により育成した結晶は著し
く低転位化していることが判つた。 It was found that the grown crystal thus obtained had no surface decomposition at all, and that sufficient As vapor pressure was applied within the inner container 2 during crystal growth. This is because the temperature of the entire upper part 2a of the inner container could be uniformly controlled. In addition, when we investigated the dislocation density inside the crystal grown above, we found that it was 30,000 cm
It was below -2 . In contrast, the dislocation density of the crystal grown by the conventional method was 30,000 to 10,000 cm -2 , and it was found that the crystal grown by the apparatus of the above example had significantly lower dislocations.
なお、本実施例の装置による結晶育成中、内側
容器２表面でのAsの析出は見られなかつた。 Incidentally, during crystal growth using the apparatus of this example, no precipitation of As was observed on the surface of the inner container 2.
［発明の効果］
以上のように、本発明の単結晶成長装置によれ
ば、上下に分割可能な内側容器の上部を石英で形
成するとともに、その内側容器上部の外周に線ヒ
ータを具備した石英管を接合することとしたの
で、内側容器上部全体を均一に温度制御すること
ができ、内側容器内における蒸気圧制御を精密か
つ適切に行なうことができる。[Effects of the Invention] As described above, according to the single crystal growth apparatus of the present invention, the upper part of the inner container which can be divided into upper and lower parts is formed of quartz, and the quartz container is equipped with a wire heater on the outer periphery of the upper part of the inner container. Since the tubes are joined, the temperature of the entire upper part of the inner container can be uniformly controlled, and the vapor pressure within the inner container can be precisely and appropriately controlled.
第１図は本発明の単結晶成長装置の一実施例を
示す縦断面図、第２図および第３図はそれぞれ第
１図に示す単結晶成長装置の内側容器上部の斜視
図および縦断面図である。
１……外側容器、２……内側容器、２ａ……内
側容器上部、２ｂ……内側容器下部、３……ヒー
タ、４……線ヒータ、５……石英管、７……上
軸、８……下軸、９……種結晶、１１……原料融
液、１２……液体封止剤、１３……るつぼ。
FIG. 1 is a longitudinal sectional view showing an embodiment of the single crystal growth apparatus of the present invention, and FIGS. 2 and 3 are a perspective view and a vertical sectional view of the upper part of the inner container of the single crystal growth apparatus shown in FIG. 1, respectively. It is. DESCRIPTION OF SYMBOLS 1... Outer container, 2... Inner container, 2a... Upper part of inner container, 2b... Lower part of inner container, 3... Heater, 4... Wire heater, 5... Quartz tube, 7... Upper shaft, 8 ... lower axis, 9 ... seed crystal, 11 ... raw material melt, 12 ... liquid sealant, 13 ... crucible.
Claims (1)
け、この内側容器外側にヒータを配設し、内側容
器下部内にるつぼを配設するとともに、そのるつ
ぼ中に原料溶液および液体封止剤を設け、高解離
圧化合物半導体単結晶を成長させる単結晶成長装
置において、内側容器上部を石英で形成するとと
もに、線ヒータを具備した石英管を内側容器上部
外周に接合したことを特徴とする単結晶成長装
置。1 An inner container that can be divided into upper and lower parts is provided within the outer container, a heater is provided outside the inner container, a crucible is provided in the lower part of the inner container, and a raw material solution and a liquid sealant are placed in the crucible. A single crystal growth apparatus for growing a high dissociation pressure compound semiconductor single crystal, characterized in that the upper part of the inner container is formed of quartz, and a quartz tube equipped with a wire heater is joined to the outer periphery of the upper part of the inner container. growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6998088A JPH01242489A (en) | 1988-03-23 | 1988-03-23 | Single crystal growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6998088A JPH01242489A (en) | 1988-03-23 | 1988-03-23 | Single crystal growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01242489A JPH01242489A (en) | 1989-09-27 |
| JPH0571559B2 true JPH0571559B2 (en) | 1993-10-07 |
Family
ID=13418320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6998088A Granted JPH01242489A (en) | 1988-03-23 | 1988-03-23 | Single crystal growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01242489A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020132491A (en) * | 2019-02-22 | 2020-08-31 | インパクト エスアー | Single crystal growth apparatus and method for manufacturing iii-v group semiconductor single crystal |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0261965U (en) * | 1988-10-27 | 1990-05-09 |
-
1988
- 1988-03-23 JP JP6998088A patent/JPH01242489A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020132491A (en) * | 2019-02-22 | 2020-08-31 | インパクト エスアー | Single crystal growth apparatus and method for manufacturing iii-v group semiconductor single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01242489A (en) | 1989-09-27 |
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