JP2829315B2 - Apparatus and method for producing high dissociation pressure compound semiconductor single crystal - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION "Industrial application field" The present invention relates to a laser device or a Ga
The present invention relates to an apparatus and a method for producing a compound semiconductor crystal having a high dissociation pressure such as As, and more particularly to an improvement for surely synthesizing raw materials in a sealed vessel prior to crystal growth.

[Prior art] When manufacturing a high dissociation pressure compound semiconductor single crystal such as GaAs by the Czochralski method (CZ method), a crucible is placed in a container filled with an inert gas and the raw material in the crucible is placed. There are many LEC methods in which a liquid sealant such as B ₂ O ₃ is floated on a melt and a single crystal is pulled while preventing a high dissociation pressure component (in this case, As) from scattering from the raw material melt.

However, this LEC method has a disadvantage that the melt composition can no longer be controlled when the raw material is charged and single crystal pulling is started. In addition, the single crystal needs to be cooled as quickly as possible in order to suppress the scattering of high dissociation pressure components on the surface of the single crystal pulled up from the liquid sealant (B ₂ O ₃ ). The temperature gradient could not be reduced, and there was a disadvantage that dislocations originating in thermal strain and non-stoichiometry occurred at high density and hindered the improvement of the quality of the single crystal.

Therefore, instead of covering the raw material melt with a liquid sealant, fill the vapor of the high-dissociation pressure component element (As in the case of GaAs) of the high-dissociation pressure compound in an airtight container and control the vapor pressure. Thus, a method has been proposed in which the composition of the melt in the crucible is controlled to solve the above problem.

As such a method, those disclosed in Japanese Patent No. 1490669 or JP-A-59-13691 are known. FIG. 5 shows an example of the former device.

In FIG. 5, a sealed container 1 is configured to be dividable from a container upper portion 2 and a container lower portion 3, and a sealing agent 5 is inserted into these joints 4. Further, a stress buffering mechanism 7 is attached to the push-up lower shaft 6 of the container lower part 3 so as to keep the stress applied to the joint 4 at an appropriate value. Sealant 5
For example, a liquid sealant such as B ₂ O ₃ or Ga or a solid sealant such as flexible graphite is used.

A crucible 9 supported by a susceptor 8 is disposed inside the sealed container 1, and the crucible 9 is rotated by a lower shaft 10 and heated by the heaters 11 a and 11 b for each sealed container 1.

A vapor pressure controller 12 is provided in the upper part 2 of the vessel, and the temperature of this part is controlled to the lowest and appropriate constant temperature on the vessel wall, and the amount of the high dissociation pressure component concentrated here is adjusted. The pressure of the high dissociation pressure component gas in the closed vessel 1 is controlled, and the composition of the raw material melt 13 in the crucible 9 is controlled.

The hermetic vessel 1 is provided with a view lot 14 for observing a growth portion of the single crystal 18. Further, a liquid seal such as B ₂ O ₃ Each of the rotary seals 16 filled with the agent is provided. Further, the entire device is housed in an external container 17.

Next, a method for growing a GaAs single crystal using the above-described apparatus will be described. In this case, the raw material for the high dissociation pressure component is As, and the other raw material component is Ga.

First, the crucible 9 is filled with Ga, and the bottom 1a of the sealed container 1 is filled.
Place As on. After evacuating the entire device,
After raising the lower shaft 6, the sealed container 1 is joined, and the inner wall except the bottom 1a of the sealed container 1 is heated to a predetermined temperature by the heater 11a, and then the bottom 1a of the sealed container 1 is heated by the heater 11b. Then, As is heated and sublimated, and the Ga raw material in the crucible 8 is heated together with the sealed container 1 to synthesize the GaAs raw material in the crucible 9. At this time, the temperature distribution in the sealed container 1 is set such that the bottom 1a and the vapor pressure control unit 12 are lower than other portions, thereby preventing the sublimated As from being concentrated in other portions in the sealed container 1. Also, during the synthesis work,
An inert gas is introduced into the space outside the sealed container 1 to balance the pressure inside and outside the sealed container 1.

When the synthesis of the GaAs raw material is completed, a seed crystal (not shown) at the lower end of the pulling shaft 15 is immersed in a GaAs melt, and the temperature of the heaters 11a and 11b is gradually raised while rotating the pulling shaft 15 while pulling. The single crystal 18 is grown while lowering.

In the bottom 1a of the sealed container 1, as much As as necessary for the synthesis of the GaAs raw material is placed, and excess As is removed from the sealed container 12 after the synthesis.
It is used to fill the inside with As gas at a constant pressure. Here, the vapor pressure control unit 12 has a capacity and a structure capable of storing As solids until the crystal growth is completed, in consideration of the amount of As lost during the crystal growth.

“Problems to be Solved by the Invention” However, the above-described apparatus and method for producing a high dissociation pressure compound semiconductor single crystal have the following disadvantages.

That is, when synthesizing GaAs, the Ga raw material in the crucible 9 is kept at a sufficiently high temperature (for example, the melting point of GaAs is 1238 ° C. or more),
As the As solid at the bottom of the sealed container 1 is gradually heated, the sublimed As immediately reacts with Ga to form GaAs.
Since GaAs is in a molten state, it does not hinder subsequent reactions.

However, when the temperature of Ga is not sufficiently raised and the sublimation of As is too intense, GaAs solids are formed on the surface of Ga, and the subsequent reaction progress is hindered. As a result, the As pressure in the sealed container 1 excessively increases, the balance with the external pressure of the sealed container 1 is lost, and As gas is ejected from a relatively low-strength portion such as the rotary seal portion 16 and a large amount of As is lost. Cause it to be If such a situation occurs, the composition control is naturally hindered, and a high-quality single crystal cannot be obtained.

In the conventional apparatus shown in FIG. 5, in order to avoid this trouble, it is necessary to pay great attention to the sublimation timing of each part of the sealed container 1, and this has impeded the automation of the operation.

This difficulty is caused by the temperature of each part in the closed container 1 being independent,
It is because they influence each other. If the temperature of Ga in the crucible 9 is increased, there is a limit even if the thermal insulation is performed in the sealed container 1, and the temperature of the As solid placed thereunder also increases. Further, when the amount of As to be charged is large, there is a high risk that control of the As pressure or the like becomes impossible.

As a countermeasure, it is effective to lengthen the sealed container 1 and separate the crucible from the container bottom to isolate the container thermally. However, this increases the size of the device and makes it difficult to handle the device. Absent.

The present invention has been made in view of the above circumstances, and without sacrificing the operability of the apparatus, a high-dissociation pressure compound semiconductor single crystal capable of reliably and easily synthesizing a raw material of a high-dissociation pressure compound semiconductor. It is an object to provide a manufacturing apparatus and a manufacturing method.

"Means for solving the problem" The present invention has been made to solve the above problems,
An apparatus for producing a high dissociation pressure compound semiconductor single crystal according to claim 1 of the present invention comprises a hermetically sealed container, a lower shaft penetrating through the bottom of the hermetically sealed container and hermetically and rotatably inserted into the hermetically sealed container, A crucible fixed to the upper end of the lower shaft and held in the sealed container, and an upper shaft that is hermetically and rotatably inserted into the sealed container through a top plate portion of the sealed container, A first container filled with the high-dissociation pressure component material is provided inside the sealed container, and the lower portion of the sealed container is airtightly connected to the sealed container via a communication portion extending coaxially with the lower shaft from the bottom of the sealed container. And a support cylinder surrounding the lower shaft is provided inside the second container, a bearing for rotatably supporting the lower shaft is provided inside the support cylinder, and a support cylinder is provided inside the support cylinder. Is filled with a sealant above the bearing, and at least Independent heating means are provided around the upper portion of the sealed container, around the portion of the sealed container corresponding to the crucible, around the portion of the sealed container corresponding to the first container, and around the second container. It is characterized by the following.

Further, in the manufacturing apparatus according to claim 2 of the present invention, a second container is provided above the sealed container and airtightly communicates with the sealed container via a communication portion extending coaxially with the upper axis from the top plate of the sealed container. , A support cylinder surrounding the upper shaft is provided inside the second container,
A structure different from the manufacturing apparatus of claim 1 is that a bearing for rotatably supporting an upper shaft is provided inside the support cylinder, and a sealant is filled inside the support cylinder above the bearing. .

On the other hand, a method for producing a high dissociation pressure compound semiconductor single crystal according to claim 3 of the present invention uses the apparatus for producing a high dissociation pressure compound semiconductor single crystal according to claim 1 or 2, and the method for producing a single crystal comprises: A container is filled with a high dissociation pressure component material, and the crucible is filled with another component material,
The other parts of the sealed container except the first container and the second container are heated to a predetermined temperature, and the first container is heated to sublimate the high dissociation pressure component raw material, which is transferred to the second container and condensed. Together with or after condensing, the other component materials in the crucible are heated to a temperature higher than the melting point of the high dissociation pressure compound semiconductor, and the high dissociation pressure component materials in the second container are heated, thereby increasing the temperature in the crucible. The method comprises synthesizing a raw material melt of a dissociation pressure compound semiconductor, and thereafter pulling a single crystal while controlling the temperature of the second container to keep the pressure of the high dissociation pressure component gas in the sealed container constant. I have.

[Operation] According to the apparatus and method for producing a high dissociation pressure compound semiconductor single crystal of the present invention, a second container is provided which is temperature-separated and independently controlled in temperature from a sealed container, After the high dissociation pressure component raw material filled in the first container is heated and sublimated and transferred to the second container, or simultaneously with the transfer,
Since the temperature of the second container is controlled to supply the high dissociation pressure component gas into the sealed container, the supply amount of the high dissociation pressure component gas can be easily and accurately controlled without being affected by the temperature from the sealed container. Is possible. Therefore, it is easy to accurately control the compound semiconductor raw material synthesizing operation, and it is difficult to cause problems such as a failure in the synthesis to increase the pressure in the sealed container and a loss of a high dissociation pressure component gas. Automation of work is also easy.

Further, since the second container is provided apart from the sealed container and provided coaxially with the lower shaft (or the upper shaft), it is not necessary to increase the size of the entire apparatus despite the fact that a large internal volume can be secured.

Further, since the second container is provided concentrically around the lower shaft (or the upper shaft), unevenness in the inner wall temperature distribution of the second container due to the high temperature portion of the crucible or the sealed container during heating hardly occurs, and The inner wall surface temperature distribution of the container can be equalized in both the circumferential direction and the length direction, and the pressure of the high dissociation pressure component gas can be accurately controlled.

Examples Examples of the apparatus and method for producing a high dissociation pressure compound semiconductor single crystal of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows an example of an apparatus for producing a high dissociation pressure compound semiconductor single crystal of the present invention (hereinafter abbreviated as an apparatus).

In this apparatus 21, a sealed container 24 composed of a container upper part 22 and a container lower part 23 is fixed on a container support 26, and these are stored in an external container 26. The container upper part 22 and the container lower part 23 are joined by raising a push-up / down shaft 29 below the container lower part 23 at a joint part 28 in which a sealant 27 is interposed.

In the container upper part 22, a pulling shaft 31 is passed through the top plate part in an airtight manner.
Is inserted. Further, a frame 32 centered on the pulling shaft 31 is provided around the pulling shaft 31, and B ₂ O ₃
The upper shaft rotating seal 33 is formed by inserting therein. In the container upper part 22, a view lot 34 is inserted and provided from the outside.

Further, on the lower flange (bottom) 23A of the lower part 23 of the container, a first container 35 of a high dissociation pressure component material is provided, and a lower shaft 37 is inserted through the lower flange 23A, and the crucible 3
6 is held.

Further, the lower flange 23A has a communication pipe 3 coaxial with the lower shaft 37.
A bottomed cylindrical second container 39 extending through 8 is provided. Inside the second container 39, there is provided a cylindrical support cylinder 40 coaxially surrounding the lower shaft 37, and a high dissociation pressure component solid is accommodated between the support cylinder 40 and the second container 39. The internal volume of the space 42 may be 40% or more of the internal volume of the first container 35.

In addition, a rotation bearing for the lower shaft 37 is provided at a lower portion of the support cylinder 40.
A space surrounded by the support cylinder 40, the lower shaft 37, and the rotary bearing 43 is filled with a liquid sealant such as B ₂ O ₃ to form a rotary seal 44. The liquid level of the liquid in the rotary seal 44 is higher than the upper end of the second container 39 and is set in the communication pipe 38.

Further, the container upper part 22, the crucible 36, the first container 35, the second container
Each of the 39 has 4 heaters to heat them independently
5, a heater 46, a heater 47, and a heater 48 are provided.

A seed crystal 49 is fixed to the lower end of the pulling shaft 31, and a material such as Ga50 is put in the crucible 36.

As a place where the second container as shown in FIG. 1 is formed, a structure as shown in FIG. 2 is also possible. Second
In the figure, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

The second container 39 of this example includes an upper flange 22 of the container upper portion 22.
A is provided above A, the upper end of the support cylinder 40 is open,
A rotary seal 44 is provided below the zero. The liquid level of the rotary seal 44 is not restricted as in the rotary seal 44 shown in FIG. In order to obtain a stable and uniform temperature distribution inside the second container 42, it is desirable to provide the heater 48 in multiple stages or to provide a heat pipe (not shown) or the like.

Next, a method of manufacturing GaAs as a high dissociation pressure compound semiconductor using the apparatus shown in FIG. 1 will be described.

First, with the joint 28 of the sealed container 24 opened, the first container 35 is filled with As51 and the crucible 36 is filled with Ga50.
Next, the entire device 21 is evacuated and the vertical axis 29 is pushed up to seal the sealed container 24, and the heaters 45, 46
Is used to heat the upper portion of the sealed container 24 to about 700 ° C. to 1000 ° C.

Next, the first container 35 is heated at 550 to 700 ° C. by the heater 47.
To sublimate As51. At this time, since the temperature of the second container 39 is lower than that of the other portions, the sublimed As51 sequentially condenses on the inner wall of the second container 39. This operation is performed on the first container
Continue until all 35 As has been transferred to the second container 39. FIG. 3 shows a state in which As51 has been transferred to the second container 39.

Next, the temperature of Ga50 in the crucible 36 is heated by the heater 46 so that the melting point of GaAs becomes 1238 ° C. or higher, and the As51 of the second container 39 is heated and sublimated. Supply. Then, a reaction with Ga50 occurs, and a GaAs melt is synthesized in the crucible 36. During the sublimation / synthesis operation, the pressure in the sealed container 24 increases. Therefore, an inert gas is introduced into the space 53 outside the sealed container 24 to balance the pressure.

The temperature of the second container 39 is finally maintained at a constant temperature of 600 to 620 ° C. Then, while the excess As51 is condensed in the second container 39, the vapor pressure As gas at this temperature is supplied to the sealed container 24.
Fill the inside, keeping the balance with the GaAs melt 52 in the crucible 36,
Keep its composition constant.

In the apparatus shown in FIG. 1, the temperature of the liquid surface position of the rotary seal 44 is higher than the temperature of the second container 39.
As51 condensation does not occur, and the condensed As solid lowers the axis.
The rotation of 37 is not hindered.

Next, as shown in FIG. 4, the seed crystal fixed to the lower end of the pull-up shaft 31 is immersed in the GaAs melt 52, and the single crystal 54 is pulled up while rotating.

As a modified example of the method for synthesizing the GaAs melt 52 described above,
While keeping the container 39 in a temperature range of 550 to 610 ° C. at which the vapor pressure of As at that temperature does not become too high, while introducing an inert gas into the space 53 and balancing the pressure, the As51 in the first container is sublimated, A method is also possible in which the temperature of Ga50 in the crucible 36 is gradually raised to the synthesis temperature of GaAs (1240 ° C. or higher).

In this case, the sublimation of As51 in the first container 35 is accelerated by the influence of the heating of the crucible 36, but as described above, the second container 39
By appropriately controlling the temperature of the GaAs melt 52, the synthesis of the GaAs melt 52 and the enrichment of As in the second container 39 simultaneously occur.
52 can be efficiently synthesized.

Also, when the single crystal 54 is grown using the apparatus shown in FIG. 2, the same operation as that performed using the apparatus 21 shown in FIG. 1 can be performed. The same effect can be obtained.

As described above, by disposing the second container 39 of the high dissociation pressure component raw material around the pull-up shaft 31 or the lower shaft 37, it is possible to easily obtain the uniformity of heating of the high dissociation pressure component raw material. In addition, an increase in the size of the device can be prevented. If the second container having such a function is to be realized in the vapor pressure control unit 12 of the conventional apparatus shown in FIG.
If all As is contained in a solid
Requires a volume of as much as 1050 cm ³ . The volume of the vapor pressure control unit 12 of the conventional apparatus (FIG. 5) is usually about 35 cm ³ , but it is not possible to increase the diameter because the pulling shaft 15 is restricted. There is no other way but to enlarge in the length direction. Therefore, there is a drawback that the device becomes considerably large, but such a problem does not occur in the device of the present invention.

Also, as in the present invention, the second container 39 of the high dissociation pressure component raw material
By providing the above, the heating of the high dissociation pressure component raw material and other raw materials can be performed independently without increasing the length of the sealed container 24, and even if the sublimation of As51 is excessive, Since this As gas is absorbed by the second container 39,
The pressure in the sealed container 24 is not excessively increased, and the As gas does not erupt from the seal portion or the like, thereby causing loss of the high dissociation pressure component raw material. That is, in this case, the second container 39 functions as a buffer.

Experimental Example 1 A single crystal of GaAs was grown using the apparatus 21 shown in FIG.

The sealed container 24, the first container 35 and the second container of the device 21 are PB
It was manufactured using graphite coated with N and molybdenum, and a gasket was used for the joint 28. The volume of the first container 2500 cm ^3, the volume of the second container was 1100 cm ^3. Crucible 36
After putting 5kg of Ga into the first container 35 and putting 5.6kg of As into the first container 35,
Exhaust the entire device 24 and push up the lower shaft 29 to join
28.

Next, the temperature of the upper part 22 of the container was reduced to 7 by the heaters 45 and 46.
The temperature of the second vessel is raised to 500 ° C. by the heater 48 while the vapor pressure of As is
0.08 atm), and the first container 3
Gradually raise the temperature of 5 to about 680 ° C.
Was observed to sublime and disappear.

Next, the temperature of the second container 39 is set to 600 to 680 by the heater 46.
When the temperature was raised to ° C., a synthesis reaction of the GaAs melt 52 occurred in the crucible 36. The reaction rate could be controlled well by the temperature of the second container 39. During this time, an inert gas of about 1 atm was introduced into the space 53 outside the sealed container to balance the pressure inside and outside the sealed container 24. The time required for the synthesis process of the GaAs melt 52 was about 5 hours. After completion of the synthesis, while the temperature of the second container is kept at 615 ° C. by the heater 48, the power of the heater 46 is gradually lowered while the pull-up shaft 31 with the seed crystal 49 is attached to the GaAs.
The crystal was immersed in the melt 52 and pulled up while rotating to grow a single crystal having a diameter of 110 mm and a length of 160 mm.

This crystal at the seed end and tail, respectively
The values of resistivity and electron mobility obtained by Hall measurement are respectively
1.4E7Ω, 6700 cm ² / Vs and 1.3E7Ω, 6600 cm ² / Vs. Regarding the impurity concentration, SIMS analysis
The concentrations of i and S are 4E4cm ^-3 and 3E14cm ^-3 , respectively,
C concentration by TIR analysis was 8E14 cm ^-3 .

From these characteristics, it is clear that the synthesis of the GaAs raw material melt was performed with a constant composition. In addition, the loss of As was as small as 42 g in the whole process of the crystal growth, indicating that the pressure balance in the sealed vessel 24 was not lost during the synthesis of the GaAs melt.

"Experimental Example 2" Crystal growth of GaAs was performed using the same apparatus and the same raw materials as in Experimental Example 1.

In the process of synthesizing the GaAs melt 52, the temperature of the second
Maintain 570-600 ° C (the vapor pressure of As at this temperature is about 0.4-0.9atm). At the same time as sublimating As51 in the first container 35, gradually raise the Ga50 in the crucible 36 to 1250 ° C. As a result, a synthesis reaction of the GaAs melt 52 occurred with an increase in the temperature of Ga50.

During this time, about 1 atm of inert gas was introduced into the outside 53 of the sealed container 24 to balance the pressure inside and outside the sealed container 24. First
After the As51 in the container 35 was exhausted, when the temperature of the second container 39 was further increased to 600 to 680 ° C., it was confirmed that the synthesis reaction of the GaAs melt continued.

A GaAs crystal was pulled from the GaAs melt 52 in the same manner as in Experimental Example 1, and a GaAs crystal equivalent to that obtained in Experimental Example 1 was obtained.

In addition, the loss of As is 50 g in the whole process of the crystal growth.
This indicates that the synthesis was carried out with sufficient control without the collapse of the pressure balance in the sealed container 24 during the synthesis of the GaAs melt.

[Effect of the Invention] As described above, according to the apparatus and method for manufacturing a high dissociation pressure compound semiconductor single crystal according to the present invention, the second container whose temperature is isolated from the sealed container and whose temperature is controlled independently is controlled.
A container is provided, and after the high dissociation pressure component material filled in the first container in the sealed container is heated and sublimated and transferred to the second container, or simultaneously with the transfer, the second container is temperature-controlled to perform high dissociation. Since the pressure component gas is supplied into the sealed container, the supply amount of the high dissociation pressure component gas can be easily and accurately controlled without being affected by the temperature from the sealed container. Therefore, it is easy to accurately control the compound semiconductor raw material synthesizing operation, and it is difficult to cause a problem such as failure of synthesis to increase the pressure in the closed vessel and loss of high dissociation pressure component gas. Automation of work is also easy.

Further, since the second container is separated from the sealed container and provided coaxially with the lower shaft (or the upper shaft), it is not necessary to increase the size of the entire apparatus despite the fact that a large inner volume can be secured. .

Further, since the second container is provided concentrically around the lower shaft (or the upper shaft), unevenness in the inner wall temperature distribution of the second container due to the high temperature portion of the crucible or the sealed container during heating hardly occurs, and The temperature distribution of the inner wall surface of the container can be equalized in both the circumferential direction and the length direction, and the pressure of the high dissociation pressure component gas can be accurately controlled.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing one embodiment of the apparatus for producing a high dissociation pressure compound semiconductor single crystal according to the present invention, FIG. 2 is a longitudinal sectional view showing another embodiment of the producing apparatus of the present invention, and FIG. FIG. 4 is a longitudinal sectional view showing a manufacturing method using the device shown in FIG. FIG. 5 is a longitudinal sectional view showing a conventional high dissociation pressure compound semiconductor crystal manufacturing apparatus. 21 …… High dissociation pressure compound semiconductor single crystal manufacturing equipment, 22 ……
Upper part of container, 22A ... Upper flange (top plate), 23 ... Lower part of container, 23A ... Lower flange (bottom), 24 ... Sealed container, 31 ... Upper shaft, 35 ... First container, 36 ... … Crucible, 37…
… Lower shaft, 38… Communication part, 39… Second container, 40… Support cylinder, 43… Rotary seal, 44 …… Sealant, 45,46,47,48
... heater, 50 ... other component raw material, 51 ... high dissociation pressure component raw material, 52 ... raw material melt, 54 ... single crystal.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Keiji Shirata, Inventor Keiji Shirata, 1-297 Kitabukuro-cho, Omiya City, Saitama Pref. (58) Field surveyed (Int. Cl. ⁶ , DB name) C30B 1/00-35/00

Claims (3)

(57) [Claims] 1. A sealed container, a lower shaft penetrating through the bottom of the sealed container and hermetically and rotatably inserted into the sealed container, and fixed to an upper end of the lower shaft and held in the sealed container. A crucible, and an upper shaft that penetrates through the top plate of the sealed container and is hermetically and rotatably inserted into the sealed container, and controls the pressure of the high dissociation pressure component gas filled in the sealed container. An apparatus for manufacturing a high-dissociation pressure compound semiconductor single crystal, which pulls up while rotating a compound semiconductor single crystal by an upper axis from a raw material melt supported in a crucible while controlling, wherein a high-dissociation pressure component material is provided inside the sealed container. Is provided, and a second container is provided below the hermetically sealed container through a communication portion extending coaxially with the lower shaft from the bottom of the hermetically sealed container. Inside the container, there is a support cylinder surrounding the lower shaft A bearing for rotatably supporting the lower shaft is provided inside the support cylinder, and a sealant is filled inside the support cylinder above the bearing. A high dissociation pressure, wherein independent heating means are provided around a portion corresponding to the crucible of the container, around a portion corresponding to the first container of the sealed container, and around the second container. Equipment for manufacturing compound semiconductor single crystals. 2. A sealed container, a lower shaft penetrating through the bottom of the sealed container and hermetically and rotatably inserted into the sealed container, and fixed to an upper end of the lower shaft and held in the sealed container. A crucible, and an upper shaft that penetrates through the top plate of the sealed container and is hermetically and rotatably inserted into the sealed container, and controls the pressure of the high dissociation pressure component gas filled in the sealed container. An apparatus for manufacturing a high-dissociation pressure compound semiconductor single crystal, which pulls up while rotating a compound semiconductor single crystal by an upper axis from a raw material melt supported in a crucible while controlling, wherein a high-dissociation pressure component material is provided inside the sealed container. Is provided, and a second container is provided above the hermetically sealed container and airtightly communicates with the hermetically sealed container via a communication portion extending coaxially from the ceiling of the hermetically sealed container. Support tube surrounding the upper shaft inside the two containers Is provided inside the support cylinder, a bearing for rotatably supporting the upper shaft is provided, and further, the inside of the support cylinder is filled with a sealant above the bearing, and at least a periphery of an upper portion of the sealed container, Independent heating means is provided around a portion corresponding to the crucible of the sealed container, around a portion corresponding to the first container of the sealed container, and around the second container. Pressure compound semiconductor single crystal manufacturing equipment. 3. A high dissociation pressure compound semiconductor single crystal manufacturing apparatus according to claim 1, which is supported in said crucible while controlling the pressure of the high dissociation pressure component gas filled in said sealed container. A method for producing a compound semiconductor single crystal having a high dissociation pressure, wherein a compound semiconductor single crystal is pulled up while rotating the compound semiconductor single crystal by the upper axis from the raw material melt, wherein the high dissociation pressure component raw material is added to the first container before the single crystal is pulled up. And the crucible is filled with other ingredient materials, and the other parts of the sealed container except the first container and the second container are heated to a predetermined temperature, and the first container is heated to achieve high dissociation. After sublimating the pressure component material and transferring it to the second container to condense, or condensing, the other component material in the crucible is heated to a temperature higher than the melting point of the high dissociation pressure compound semiconductor, and High dissociation pressure component raw material By heat, to synthesize a high dissociation pressure compound semiconductor raw material melt in the crucible, while maintaining the pressure of the high dissociation pressure component gas sealed vessel constant by controlling the temperature of the second container and thereafter,
A method for producing a high dissociation pressure compound semiconductor single crystal, comprising pulling a single crystal.