JPH0571168B2 - - Google Patents
Info
- Publication number
- JPH0571168B2 JPH0571168B2 JP61129578A JP12957886A JPH0571168B2 JP H0571168 B2 JPH0571168 B2 JP H0571168B2 JP 61129578 A JP61129578 A JP 61129578A JP 12957886 A JP12957886 A JP 12957886A JP H0571168 B2 JPH0571168 B2 JP H0571168B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- energy
- coating
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000004090 dissolution Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体デバイス等の製造方法及び製
造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for manufacturing semiconductor devices and the like.
従来、この種の多層レジスト構造は、例えば分
子量の相異なる二層のレジスト構造を、種別の異
なるレジストの段階的な塗布により得ることが行
なわれ、リフトオフ法と呼ばれる半導体デバイス
製造方法に使用するため、逆テーパー断面形状の
開口パターンを形成することが行なわれていた。
Conventionally, this type of multilayer resist structure has been obtained by, for example, forming a two-layer resist structure with different molecular weights by stepwise coating of different types of resists, and is used in a semiconductor device manufacturing method called a lift-off method. , forming an opening pattern with an inverted tapered cross-sectional shape.
上述した従来の種別の異なるレジストを用いる
手法では、所望する分子量、または溶解速度を有
するレジスト材料を選択し、機能を材料自身の性
質として伴なわせることが必要であつた。
In the above-described conventional method using different types of resists, it was necessary to select a resist material having a desired molecular weight or dissolution rate, and to attach the function as a property of the material itself.
従つて、一つの材料に対して多くの機能を伴な
わせることは実用上困難であり、例えば粘度、分
子量、溶解速度等レジスト材料の性質を全ての点
で所望する機能に合致させることは、材料選択の
範囲を非常に小さくする結果を招く欠点がある。 Therefore, it is practically difficult to provide one material with many functions. For example, it is difficult to match the properties of a resist material such as viscosity, molecular weight, and dissolution rate to desired functions in all respects. There are drawbacks that result in a very small range of material selection.
また、多種のレジストを段階的に塗布する方法
では、処理設備の面でも、各種レジスト専用の機
構を必要とする欠点もある。 Furthermore, the method of applying various types of resist in stages also has the disadvantage of requiring a mechanism dedicated to each type of resist in terms of processing equipment.
本発明によるレジスト塗布法は、少なくとも3
層以上の多層レジスト構造であつて、塗布と光又
は荷電粒子線等のエネルギー照射とを組合わせ反
復処理することにより同種レジストの塗布に対し
て溶解速度の異なる多層レジスト構造を形成し、
逆テーパー状の開口断面形状が得られるように膜
厚方向にレジスト感度を設計したことを特徴とす
る。
The resist coating method according to the present invention includes at least three
A multilayer resist structure having more than one layer, in which a multilayer resist structure having a dissolution rate different from that of the same type of resist coating is formed by repeatedly processing a combination of coating and energy irradiation such as light or charged particle beam,
The resist sensitivity is designed in the film thickness direction so that an inverted tapered opening cross-sectional shape can be obtained.
次に、本発明について図面を参照して説明す
る。
Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の断面図である。ウ
エハー2は、回転装置1及び、レジスト滴下ノズ
ル4からなる塗布機構により、レジスト3が塗布
される。この後、赤外線ヒーター5及び赤外線ヒ
ーターカバー6から構成された乾燥機構により塗
布膜として形成される。さらにこの後、紫外線ラ
ンプ7及び紫外線ランプカバー8からなるエネル
ギー照射機構により、ウエハー上の塗布膜上に紫
外線が全面一括照射される。 FIG. 1 is a sectional view of an embodiment of the present invention. A resist 3 is applied to the wafer 2 by a coating mechanism consisting of a rotating device 1 and a resist dropping nozzle 4. Thereafter, a coating film is formed by a drying mechanism comprising an infrared heater 5 and an infrared heater cover 6. Furthermore, after this, an energy irradiation mechanism consisting of an ultraviolet lamp 7 and an ultraviolet lamp cover 8 irradiates the entire surface of the coating film on the wafer with ultraviolet rays.
以上の処理を反復することにより、多層レジス
ト構造を得ることができる。この様子を第2図に
示す。第2図aにおいて、ウエハー2上の、塗布
膜として形成された第1層レジスト31に対し、
赤外線ランプ7よりの光が照射される。 By repeating the above process, a multilayer resist structure can be obtained. This situation is shown in FIG. In FIG. 2a, with respect to the first layer resist 31 formed as a coating film on the wafer 2,
Light from an infrared lamp 7 is irradiated.
この際、第1層レジスト31に対し、Pという
エネルギー量が照射されたとする。次に第2図b
に示すように、第2層レジスト32を形成し、再
びPというエネルギー量を与えると、一層のレジ
ストあたりのエネルギー吸収を考え、透過率Tと
すれば、この時第2層レジストにはPというエネ
ルギー量又、下層の第1層レジストにはT・Pと
いうエネルギー量が与えられる。これらの処理を
反復し、第2図cに示す5層のレジスト構造を形
成した場合の各レジスト層における蓄積エネルギ
ー量の様子を第3図に示す。 At this time, it is assumed that the first layer resist 31 is irradiated with an energy amount of P. Next, Figure 2b
As shown in the figure, when the second layer resist 32 is formed and an energy amount of P is applied again, considering the energy absorption per layer of resist and assuming that the transmittance is T, at this time, the second layer resist has an energy amount of P. Amount of energy Also, an amount of energy T·P is given to the underlying first layer resist. FIG. 3 shows the amount of energy stored in each resist layer when these processes are repeated to form the five-layer resist structure shown in FIG. 2c.
グラフ上透過率Tの100%,90%,75%の場合
を図示した。本発明の手法によれば、以上の様
に、前もつて、各レジスト層あたりのエネルギー
透過率Tを知つておけば、蓄積エネルギー量が予
想できる。また、以上の実施例では、各レジスト
層での照射エネルギー量は、一定のPとしたがこ
の値を毎回変化させることにより、さらに多種の
蓄積エネルギー量の各層での分布が達成できる。 The graph shows cases where the transmittance T is 100%, 90%, and 75%. According to the method of the present invention, as described above, if the energy transmittance T for each resist layer is known in advance, the amount of stored energy can be predicted. Further, in the above embodiments, the amount of irradiation energy in each resist layer was set to be a constant P, but by changing this value each time, even more various distributions of the amount of stored energy in each layer can be achieved.
また第3図に見るように、透過率が小さくなる
と、各層間の蓄積エネルギー量の変化が小さくな
るため、一層あたりの膜厚、照射エネルギー変化
に注意して設定することが有効である。 Further, as shown in FIG. 3, as the transmittance decreases, the change in the amount of stored energy between each layer decreases, so it is effective to set the film thickness and irradiation energy changes per layer with care.
PMMA等のレジストでは、照射エネルギー量
に応じて分子量が低分子化するため、溶解速度が
増大し、第2図dに示す様に、パターン露光を行
つた現像後の断面形状において、リフトオフ法に
好都合な逆テーパー形状を形成でき、また形状の
最適化も可能である。 For resists such as PMMA, the molecular weight decreases depending on the amount of irradiation energy, so the dissolution rate increases, and as shown in Figure 2 d, the cross-sectional shape after pattern exposure and development is not suitable for the lift-off method. A convenient inverted tapered shape can be formed and the shape can also be optimized.
以上説明したように本発明は、各層毎の照射エ
ネルギー量の制御により、広い範囲でのエネルギ
ー分布を変化可能であり、制御性を決定付ける要
因も材料自身の性質ではなく、エネルギー照射機
構が支配的であり、電気信号等により制御で容易
に高精度及び高信頼性を得ることができる効果が
ある。
As explained above, the present invention can change the energy distribution over a wide range by controlling the amount of irradiation energy for each layer, and the factor that determines controllability is not the properties of the material itself but the energy irradiation mechanism. This has the effect that high precision and high reliability can be easily obtained by control using electrical signals or the like.
第1図は本発明のレジスト塗布装置の断面図、
第2図は本発明のレジスト塗布法の断面図、第3
図は、本発明のレジスト塗布法により得られた多
層レジスト構造での各層における蓄積エネルギー
量と、一層あたりのエネルギー透過率との関係を
示すグラフ。
1……回転装置、2……ウエハー、3……レジ
スト、4……レジスト滴下ノズル、5……赤外線
ヒーター、6……赤外線ヒーターカバー、7……
紫外線ランプ、8……紫外線ランプカバー、31
……第1層レジスト、32……第2層レジスト、
33……第3層レジスト、34……第4層レジス
ト、35……第5層レジスト。
FIG. 1 is a cross-sectional view of the resist coating device of the present invention;
Figure 2 is a cross-sectional view of the resist coating method of the present invention;
The figure is a graph showing the relationship between the amount of energy stored in each layer and the energy transmittance per layer in a multilayer resist structure obtained by the resist coating method of the present invention. 1...Rotating device, 2...Wafer, 3...Resist, 4...Resist dropping nozzle, 5...Infrared heater, 6...Infrared heater cover, 7...
Ultraviolet lamp, 8... Ultraviolet lamp cover, 31
...First layer resist, 32...Second layer resist,
33... Third layer resist, 34... Fourth layer resist, 35... Fifth layer resist.
Claims (1)
て、塗布と光又は荷電粒子線等のエネルギー照射
とを組合わせ反復処理することにより同種レジス
トの塗布に対して溶解速度の異なる多層レジスト
構造を形成し、逆テーパー状の開口断面形状が得
られるように膜厚方向にレジスト感度を設計した
ことを特徴とするレジスト塗布法。1 A multilayer resist structure with at least three or more layers, which forms a multilayer resist structure with a dissolution rate different from that of the same type of resist coating by repeating a combination of coating and energy irradiation such as light or charged particle beams. A resist coating method characterized in that the resist sensitivity is designed in the film thickness direction so that an inverted tapered opening cross-sectional shape can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12957886A JPS62285423A (en) | 1986-06-03 | 1986-06-03 | Resist coating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12957886A JPS62285423A (en) | 1986-06-03 | 1986-06-03 | Resist coating method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62285423A JPS62285423A (en) | 1987-12-11 |
JPH0571168B2 true JPH0571168B2 (en) | 1993-10-06 |
Family
ID=15012926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12957886A Granted JPS62285423A (en) | 1986-06-03 | 1986-06-03 | Resist coating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62285423A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5677603B2 (en) * | 2012-11-26 | 2015-02-25 | 東京エレクトロン株式会社 | Substrate cleaning system, substrate cleaning method, and storage medium |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100428A (en) * | 1980-12-16 | 1982-06-22 | Matsushita Electronics Corp | Method for photomechanical process |
JPS62173722A (en) * | 1986-01-28 | 1987-07-30 | Hitachi Ltd | Formation of pattern |
-
1986
- 1986-06-03 JP JP12957886A patent/JPS62285423A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100428A (en) * | 1980-12-16 | 1982-06-22 | Matsushita Electronics Corp | Method for photomechanical process |
JPS62173722A (en) * | 1986-01-28 | 1987-07-30 | Hitachi Ltd | Formation of pattern |
Also Published As
Publication number | Publication date |
---|---|
JPS62285423A (en) | 1987-12-11 |
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