JPH0570260A - Brazing filler metal paste for joining ceramic to metal - Google Patents
Brazing filler metal paste for joining ceramic to metalInfo
- Publication number
- JPH0570260A JPH0570260A JP26820491A JP26820491A JPH0570260A JP H0570260 A JPH0570260 A JP H0570260A JP 26820491 A JP26820491 A JP 26820491A JP 26820491 A JP26820491 A JP 26820491A JP H0570260 A JPH0570260 A JP H0570260A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- paste
- ceramic
- joining
- brazing filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はセラミックと金属の接合
用ロウペーストに関する。具体的にいうと、例えばＩＣ
パッケージやパワーダイオードなどの基板として用いら
れるセラミック−金属接合基板を作製する際に用いられ
る接合用ロウペーストに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wax paste for joining ceramic and metal. Specifically, for example, IC
The present invention relates to a soldering paste for bonding used in producing a ceramic-metal bonded substrate used as a substrate for a package, a power diode or the like.
【０００２】[0002]
【従来の技術】図１はセラミック−金属接合体（接合基
板）１の一例を示す正面図である。この接合体１は、ロ
ウ材２を用いてセラミック基板３の両主面にそれぞれ金
属板４を接合したものである。2. Description of the Related Art FIG. 1 is a front view showing an example of a ceramic-metal bonded body (bonded substrate) 1. The joined body 1 is formed by joining metal plates 4 to both main surfaces of a ceramic substrate 3 using a brazing material 2.
【０００３】このような接合体１は、例えばＩＣ（集積
回路）パッケージやパワーダイオード等の基板として用
いられる。今日、ＩＣやパワーダイオード等の半導体デ
バイスは、高密度化、高速化、高出力化され、従来に比
べて発熱量が増大してきており、図１のような接合体１
を基板として用いれば、金属板４がヒートシンクとして
働き、半導体デバイスで発生した熱を効果的に放熱させ
られるためである。Such a bonded body 1 is used, for example, as a substrate for an IC (integrated circuit) package, a power diode, or the like. Today, semiconductor devices such as ICs and power diodes are becoming higher in density, higher in speed, and higher in output, and the amount of heat generated is increasing compared to the conventional one.
This is because, when is used as a substrate, the metal plate 4 functions as a heat sink and the heat generated in the semiconductor device can be effectively dissipated.
【０００４】従来の接合体にあっては、セラミック基板
３と金属板４を接合させるためのロウ材２として、Ｃｕ
（銅）やＡｇ（Ａｇ）等にＴｉ（チタン）を添加した混
合微粉末からなるペーストを用いている。そして、接合
体１を作製する場合には、まず金属板４の表面にロウ材
２のペーストを印刷し、この金属板４をセラミック基板
３の両主面に積層した後、セラミック基板３に金属板４
を積層したものを真空中において熱処理している。熱処
理するとロウ材２が溶融し、その後冷却されることによ
ってロウ材２が固化し、固化したロウ材２によってセラ
ミック基板３と金属板４が強固に接合される。さらに、
熱処理時にロウ材２中のＴｉがセラミック基板３の組成
と反応することにより、金属板４とセラミック基板３の
接合強度が一層高くなっている。In the conventional bonded body, Cu is used as the brazing material 2 for bonding the ceramic substrate 3 and the metal plate 4 together.
(Copper), Ag (Ag), and the like, and Ti (titanium) added, a paste made of a mixed fine powder is used. When producing the joined body 1, first, the paste of the brazing material 2 is printed on the surface of the metal plate 4, the metal plates 4 are laminated on both main surfaces of the ceramic substrate 3, and then the metal is formed on the ceramic substrate 3. Board 4
The laminated product is heat-treated in a vacuum. When the heat treatment is performed, the brazing material 2 is melted and then cooled to solidify the brazing material 2, and the solidified brazing material 2 firmly bonds the ceramic substrate 3 and the metal plate 4. further,
Since Ti in the brazing material 2 reacts with the composition of the ceramic substrate 3 during the heat treatment, the bonding strength between the metal plate 4 and the ceramic substrate 3 is further increased.
【０００５】[0005]
【発明が解決しようとする課題】上記のようなロウペー
スト中の金属粉末は、局部的な接合強度の違いや接合不
良等を生じないよう微細粉を用いることが望まれる。As the metal powder in the above-mentioned wax paste, it is desirable to use a fine powder so as not to cause a local difference in bonding strength or a defective bonding.
【０００６】しかしながら、Ｔｉは延性が高いため、ロ
ウペーストとしてＣｕ、Ａｇ、Ｔｉの混合粉を使用する
場合にはＣｕ、Ａｇに比べてＴｉの微細粉を得にくく、
セラミック基板と金属板との接合に最も寄与するＴｉ粉
の粒径が粗くなり、セラミック基板と金属板との接合面
積が大きい場合には、セラミック基板と金属板との接合
面に局部的な接合不良の領域や非接合部等が発生するこ
とがあった。However, since Ti has a high ductility, when a mixed powder of Cu, Ag, and Ti is used as a wax paste, it is difficult to obtain a fine powder of Ti as compared with Cu and Ag.
When the grain size of Ti powder, which contributes most to the bonding between the ceramic substrate and the metal plate, becomes coarse and the bonding area between the ceramic substrate and the metal plate is large, the bonding between the ceramic substrate and the metal plate is locally bonded. A defective area or a non-bonded portion may occur.
【０００７】本発明は叙上の従来例の欠点に鑑みてなさ
れたものであり、その目的とするところは接合面に局部
的な接合不良や非接合部を生じさせることなく、セラミ
ックと金属を接合できるロウペーストを提供することに
ある。The present invention has been made in view of the above-mentioned drawbacks of the conventional examples, and an object of the present invention is to form a ceramic and a metal without causing a local defective bonding or a non-bonded portion on a bonded surface. It is to provide a wax paste that can be joined.
【０００８】[0008]
【課題を解決するための手段】本発明によるセラミック
と金属の接合用ロウペーストは、セラミックと金属をロ
ウ付けにより接合するためのロウペーストであって、
銅、銀、水素化チタン及び有機物質の混合物からなり、
銅、銀及び水素化チタンの和に対する水素化チタンの重
量比がほぼ２重量％以上２０重量％以下であることを特
徴としている。A brazing paste for joining ceramics and metals according to the present invention is a brazing paste for joining ceramics and metals by brazing,
Consisting of a mixture of copper, silver, titanium hydride and organic substances,
It is characterized in that the weight ratio of titanium hydride to the sum of copper, silver and titanium hydride is approximately 2% by weight or more and 20% by weight or less.
【０００９】[0009]
【作用】水素化チタン（ＴｉＨ2）は水素を含んでいて
チタンよりも脆いため、水素化チタン粉末はチタン粉末
よりも微細粉末を得易い。このため、チタン粉末に代え
てロウペーストに銅粉末や銀粉末とともに水素化チタン
粉末を使用することにより、ロウペースト中の粉末を例
えば１〜３μｍ程度の均一な微小粉末に揃えることがで
きる。Since titanium hydride (TiH 2 ) contains hydrogen and is more brittle than titanium, titanium hydride powder is easier to obtain a fine powder than titanium powder. Therefore, by using titanium hydride powder together with copper powder and silver powder in the wax paste instead of titanium powder, the powder in the wax paste can be made into uniform fine powder of, for example, about 1 to 3 μm.
【００１０】こうして均一な微小粉末の銅、銀、水素化
チタン等からなるロウペーストを用いることにより、ロ
ウペーストの接合性の局部的不均一がなくなり、セラミ
ックと金属との接合面積が大きくなっても、セラミック
と金属との接合面に非接合部や接合不良の領域を生じな
くなる。この結果、セラミックと金属との接合強度が高
くなり、接合の信頼性も向上する。Thus, by using a uniform wax paste made of fine powder of copper, silver, titanium hydride, etc., there is no local unevenness in the bondability of the wax paste, and the bonding area between the ceramic and the metal is increased. In addition, a non-bonded portion or a defective bonding region does not occur on the bonded surface between the ceramic and the metal. As a result, the bonding strength between the ceramic and the metal is increased, and the reliability of the bonding is also improved.
【００１１】なお、水素化チタンの重量比がほぼ２重量
％よりも少ない場合や、ほぼ２０重量％よりも多い場合
には、セラミックと金属との剥離強度が著しく低下し
た。When the weight ratio of titanium hydride is less than about 2% by weight or more than about 20% by weight, the peel strength between the ceramic and the metal is remarkably reduced.
【００１２】[0012]
【実施例】本発明の一実施例によると、セラミック−金
属接合用ロウペーストは、Ｃｕ、Ａｇ、ＴｉＨ2（水素
化チタン）及び有機物質の混合物からなり、Ｃｕ、Ａ
ｇ、ＴｉＨ2は例えば平均粒径１〜３μｍ程度に揃えら
れた均一な微小粉末となっている。しかも、ＴｉＨ2／
（ＴｉＨ2＋Ｃｕ＋Ａｇ）の重量比を２重量％以上２０
重量％以下としている。EXAMPLE According to one embodiment of the present invention, a ceramic-metal joining wax paste is composed of a mixture of Cu, Ag, TiH 2 (titanium hydride) and an organic material.
g and TiH 2 are, for example, uniform fine powders having an average particle size of about 1 to 3 μm. Moreover, TiH 2 /
The weight ratio of (TiH 2 + Cu + Ag) is 2% by weight or more 20
Weight% or less.
【００１３】つぎに、より具体的な実施例によるロウペ
ースト、そのロウペーストを用いてセラミック基板と金
属板の接合体を作製する方法、その接合体の接合強度を
測定した結果について詳述する。Next, the wax paste according to a more specific embodiment, a method for producing a bonded body of a ceramic substrate and a metal plate using the wax paste, and the result of measuring the bonding strength of the bonded body will be described in detail.
【００１４】まず、平均粒径１.５μｍのＴｉＨ2微細
粉、平均粒径２μｍのＣｕ微細粉、平均粒径２μｍのＡ
ｇ微細粉を下記の表１に示すような割合で混合し、さら
にポリビニルブチラールや有機溶媒等の有機物質を添加
し、ＴｉＨ2／（ＴｉＨ2＋Ｃｕ＋Ａｇ）の重量比がそれ
ぞれ１重量％、２重量％、５重量％、１０重量％、２０
重量％、３０重量％の比較例１、実施例１〜４及び比較
例２の各ロウペーストを得た。さらに、平均粒径２０μ
ｍのＴｉ微細粉、平均粒径２μｍのＣｕ微細粉、平均粒
径２μｍのＡｇ微細粉を表１の比較例３の欄に示すよう
な割合で混合し、さらにポリビニルブチラールや有機溶
媒等の有機物質を添加し、Ｔｉ／（Ｔｉ＋Ｃｕ＋Ａｇ）
の重量比が５重量％の比較例３のロウペーストを得た。First, TiH 2 fine powder having an average particle size of 1.5 μm, Cu fine powder having an average particle size of 2 μm, and A having an average particle size of 2 μm.
g Fine powders are mixed in the proportions shown in Table 1 below, and organic substances such as polyvinyl butyral and organic solvents are added, and the weight ratio of TiH 2 / (TiH 2 + Cu + Ag) is 1% by weight and 2% by weight, respectively. %, 5% by weight, 10% by weight, 20
% And 30% by weight of the wax pastes of Comparative Example 1, Examples 1 to 4 and Comparative Example 2 were obtained. Furthermore, average particle size 20μ
m Ti fine powder, Cu fine powder having an average particle size of 2 μm, and Ag fine powder having an average particle size of 2 μm were mixed in the proportions shown in the column of Comparative Example 3 in Table 1, and further organic materials such as polyvinyl butyral and an organic solvent were mixed. Add material, Ti / (Ti + Cu + Ag)
A wax paste of Comparative Example 3 having a weight ratio of 5% by weight was obtained.
【００１５】[0015]
【表１】 [Table 1]
【００１６】ついで、実施例１〜４及び比較例１〜３の
ロウペーストを用いて銅板を窒化アルミニウム（Ａｌ
Ｎ）基板に接合させた。すなわち、各ロウペーストを厚
さ０.３ｍｍの銅板に印刷し、銅板のペースト印刷面を
窒化アルミニウム基板と接触させるように重ね、ロウペ
ースト中のバインダを飛散させるために６００℃に３時
間保持した後、１ｇｆ／ｍｍ2の荷重をかけた状態で真
空中において８５０℃で１０分間熱処理し、実施例１〜
４及び比較例１〜３の各接合体を作製した。なお、この
ときの真空度は１０-4Ｔｏｒｒ以上、冷却速度は１℃／
ｍｉｎとした。Then, using the wax pastes of Examples 1 to 4 and Comparative Examples 1 to 3, copper plates were formed into aluminum nitride (Al
N) Bonded to the substrate. That is, each wax paste was printed on a copper plate having a thickness of 0.3 mm, and the paste-printed surface of the copper plate was overlapped so as to be in contact with the aluminum nitride substrate, and was held at 600 ° C. for 3 hours in order to scatter the binder in the wax paste. After that, heat treatment was performed at 850 ° C. for 10 minutes in a vacuum in a state where a load of 1 gf / mm 2 was applied.
4 and Comparative Examples 1 to 3 were produced. At this time, the degree of vacuum is 10 −4 Torr or more, and the cooling rate is 1 ° C. /
It was set to min.
【００１７】熱処理後の各接合体の接合強度を測定する
ため、窒化アルミニウム基板に接合された銅板のランド
部に平行にメッキ銅線をハンダ付けし、Ｌ型ピール強度
（剥離強度）を測定した。実施例１〜４及び比較例１〜
３のピール強度の測定結果は表１に示されている。表１
から明らかなように、ロウペースト中のＴｉＨ2量が２
重量％〜２０重量％の範囲内にある実施例１〜４の接合
体の場合、ピール強度は２.７ｋｇｆ／（２ｍｍ角）以
上であって、ＴｉＨ2の代わりにＴｉを添加した比較例
３の接合体と同等の接合強度を示した。一方、ロウペー
スト中のＴｉＨ2量が１重量％及び３０重量％である比
較例１及び２の接合体の場合には、ピール強度は１ｋｇ
ｆ／（２ｍｍ角）以下と著しく低くなった。In order to measure the bonding strength of each bonded body after heat treatment, a plated copper wire was soldered in parallel with the land portion of the copper plate bonded to the aluminum nitride substrate, and the L-type peel strength (peel strength) was measured. .. Examples 1-4 and Comparative Examples 1-
The measurement results of peel strength of No. 3 are shown in Table 1. Table 1
As is clear from the figure, the amount of TiH 2 in the wax paste is 2
In the case of the joined bodies of Examples 1 to 4 in the range of 20 wt% to 20 wt%, the peel strength was 2.7 kgf / (2 mm square) or more, and Comparative Example 3 in which Ti was added instead of TiH 2. The joint strength was equivalent to that of the joint body. On the other hand, in the case of the joined bodies of Comparative Examples 1 and 2 in which the amount of TiH 2 in the wax paste was 1% by weight and 30% by weight, the peel strength was 1 kg.
It was significantly lower than f / (2 mm square).
【００１８】引き続き、実施例１〜４及び比較例３の各
ロウペーストを用いて２インチ角の窒化アルミニウム基
板（厚さ０.６３５ｍｍ）に５０ｍｍ角の銅板（厚さ０.
３ｍｍ）を接合した。接合後、硝酸水溶液を用いて銅板
を溶解除去し、接合状態を観察したところ、比較例３の
ロウペーストを用いた接合体の場合は局部的に接合して
いない部分があったのに対し、実施例１〜４のロウペー
ストを用いた接合体では接合面の全面が接合していた。Then, using each of the wax pastes of Examples 1 to 4 and Comparative Example 3, a 2-inch square aluminum nitride substrate (thickness 0.635 mm) was formed on a 50 mm square copper plate (thickness: 0.65 mm).
3 mm) was joined. After the joining, the copper plate was dissolved and removed using an aqueous nitric acid solution, and the joining state was observed. In contrast, in the case of the joined body using the wax paste of Comparative Example 3, there were locally unjoined portions. In the joined bodies using the wax pastes of Examples 1 to 4, the entire joining surface was joined.
【００１９】[0019]
【発明の効果】本発明のロウペーストによれば、接合性
の局部的不均一がなくなるので、大きな接合面積でセラ
ミックと金属を接合させても、接合面に非接合部や接合
不良の領域を生じなくなる。この結果、セラミックと金
属との接合強度が高くなり、接合の信頼性も向上させる
ことができる。EFFECTS OF THE INVENTION The wax paste of the present invention eliminates local non-uniformity of the bondability, so that even if the ceramic and the metal are bonded to each other with a large bonding area, a non-bonded part or a defective bonding region is formed on the bonded surface. It will not occur. As a result, the bonding strength between the ceramic and the metal is increased, and the reliability of the bonding can be improved.
【図１】ロウペーストにより接合されたセラミック基板
と金属板の接合体を示す正面図である。FIG. 1 is a front view showing a joined body of a ceramic substrate and a metal plate joined by a wax paste.
２ ロウ材 ３ セラミック基板 ４ 金属板 2 Brazing material 3 Ceramic substrate 4 Metal plate
Claims (1)
するためのロウペーストであって、銅、銀、水素化チタ
ン及び有機物質の混合物からなり、銅、銀及び水素化チ
タンの和に対する水素化チタンの重量比がほぼ２重量％
以上２０重量％以下であることを特徴とするセラミック
と金属の接合用ロウペースト。1. A brazing paste for joining ceramics and metals by brazing, comprising a mixture of copper, silver, titanium hydride and an organic substance, the titanium hydride being the sum of copper, silver and titanium hydride. Is approximately 2% by weight
A brazing paste for joining ceramics and metals, characterized in that the content is not less than 20% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26820491A JPH0570260A (en) | 1991-09-18 | 1991-09-18 | Brazing filler metal paste for joining ceramic to metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26820491A JPH0570260A (en) | 1991-09-18 | 1991-09-18 | Brazing filler metal paste for joining ceramic to metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0570260A true JPH0570260A (en) | 1993-03-23 |
Family
ID=17455369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26820491A Pending JPH0570260A (en) | 1991-09-18 | 1991-09-18 | Brazing filler metal paste for joining ceramic to metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0570260A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015046280A1 (en) * | 2013-09-30 | 2015-04-02 | 三菱マテリアル株式会社 | Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module |
| CN107186386A (en) * | 2017-06-20 | 2017-09-22 | 黄河水利职业技术学院 | A kind of new γ TiAl alloys put hydrogen high-temp solder and preparation method thereof |
| CN115151371A (en) * | 2020-03-31 | 2022-10-04 | 同和金属技术有限公司 | Brazing material, method for producing same, and method for producing metal-ceramic bonded substrate |
-
1991
- 1991-09-18 JP JP26820491A patent/JPH0570260A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015046280A1 (en) * | 2013-09-30 | 2015-04-02 | 三菱マテリアル株式会社 | Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module |
| US10016956B2 (en) | 2013-09-30 | 2018-07-10 | Mitsubishi Materials Corporation | Cu/ceramic bonded body, method for manufacturing Cu/ceramic bonded body, and power module substrate |
| CN107186386A (en) * | 2017-06-20 | 2017-09-22 | 黄河水利职业技术学院 | A kind of new γ TiAl alloys put hydrogen high-temp solder and preparation method thereof |
| CN107186386B (en) * | 2017-06-20 | 2019-05-14 | 黄河水利职业技术学院 | A kind of novel gamma-TiAl alloy sets hydrogen high-temp solder and preparation method thereof |
| CN115151371A (en) * | 2020-03-31 | 2022-10-04 | 同和金属技术有限公司 | Brazing material, method for producing same, and method for producing metal-ceramic bonded substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6294828B1 (en) | Semiconductor chip package | |
| KR20140127228A (en) | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member | |
| KR20150092150A (en) | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, paste for copper plate bonding, and method for producing bonded body | |
| JP3834351B2 (en) | Ceramic circuit board | |
| JP3095490B2 (en) | Ceramic-metal joint | |
| JPH0570260A (en) | Brazing filler metal paste for joining ceramic to metal | |
| JP5016756B2 (en) | Nitride-based ceramic member and metal member joined body and nitride-based ceramic circuit board using the same | |
| JPH0323512B2 (en) | ||
| JPH08102570A (en) | Ceramic circuit board | |
| JP3095187B2 (en) | Brazing filler metal for metal / ceramics | |
| JP3257869B2 (en) | Circuit board | |
| JP2000124585A (en) | Manufacture of aluminum-aluminum nitride insulating substrate | |
| JP3302714B2 (en) | Ceramic-metal joint | |
| JP2006120973A (en) | Circuit board and manufacturing method thereof | |
| JP3227868B2 (en) | Solder paste | |
| JPH0570261A (en) | Brazing filler metal paste for joining ceramic to metal | |
| JP2783577B2 (en) | Brazing filler metal paste for metal-ceramics and electronic components | |
| JP2945198B2 (en) | Joining method of copper plate and ceramics | |
| JPH05246769A (en) | Ceramic-metal joining composition and ceramic-metal joined body using the same | |
| JPH0215874A (en) | Method and material for joining metal and ceramics | |
| JP2000178081A (en) | Metal-ceramic jointed substrate | |
| JP2000228568A (en) | Aluminum-aluminum nitride insulating circuit board | |
| JPH0699199B2 (en) | Aluminum nitride substrate | |
| JP2616951B2 (en) | Aluminum nitride sintered body having metallized surface and method for producing the same | |
| JP2867693B2 (en) | Circuit board |