JP2861357B2 - Aluminum nitride-copper bonding method - Google Patents
Aluminum nitride-copper bonding methodInfo
- Publication number
- JP2861357B2 JP2861357B2 JP27955690A JP27955690A JP2861357B2 JP 2861357 B2 JP2861357 B2 JP 2861357B2 JP 27955690 A JP27955690 A JP 27955690A JP 27955690 A JP27955690 A JP 27955690A JP 2861357 B2 JP2861357 B2 JP 2861357B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- copper
- nitride substrate
- copper plate
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は窒化アルミニウム−銅接合方法に関し、特
に、窒化アルミニウム（AlN）基板と銅（Cu）板とをろ
う材でろう付けする窒化アルミニウム−銅接合方法に関
する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum nitride-copper bonding method, and more particularly, to an aluminum nitride (AlN) substrate and a copper (Cu) plate which are brazed with a brazing material. It relates to a copper joining method.
（従来技術） 半導体デバイスの高密度化，高速化および高出力化に
伴い、半導体デバイスでの発熱量が増大してきている。
そこで、半導体デバイスの基板材料としては、放熱性に
優れたものが要求されている。放熱性に優れた基板材料
としては、従来より利用されているアルミナに代わって
窒化アルミニウムが注目されている。(Prior Art) As the density, speed, and output of semiconductor devices increase, the amount of heat generated by the semiconductor devices has increased.
Therefore, as a substrate material of a semiconductor device, a material having excellent heat dissipation properties is required. As a substrate material having excellent heat dissipation properties, aluminum nitride has attracted attention in place of conventionally used alumina.
ところが、実装基板としての窒化アルミニウム基板の
放熱性を良好にするためには、ヒートシンクとして厚さ
数100μｍのたとえば銅板などの金属板を窒化アルミニ
ウム基板に接合させる必要がある。この場合、チタンな
どの活性金属を添加したろう材を用いて、窒化アルミニ
ウム基板に銅板を接合させていた。However, in order to improve the heat dissipation of the aluminum nitride substrate as the mounting substrate, it is necessary to join a metal plate such as a copper plate having a thickness of several 100 μm as the heat sink to the aluminum nitride substrate. In this case, a copper plate is bonded to an aluminum nitride substrate using a brazing material to which an active metal such as titanium is added.
第１図はこの発明の背景となり、かつ、この発明が適
用される窒化アルミニウム基板と銅板との接合体10を示
す側面図である。この接合体10では、窒化アルミニウム
基板12の表裏面に、複数の銅板14がチタン（Ti）−銅
（Cu）−銀（Ag）系のろう材16で接合される。FIG. 1 is a side view showing a joined body 10 of an aluminum nitride substrate and a copper plate to which the present invention is applied and to which the present invention is applied. In this joined body 10, a plurality of copper plates 14 are joined to the front and back surfaces of an aluminum nitride substrate 12 with a titanium (Ti) -copper (Cu) -silver (Ag) -based brazing material 16.
従来の接合方法では、窒化アルミニウム基板12と銅板
14との間に、箔状のろう材16を挟み、真空中で熱処理を
施し、ろう材16を溶融させ、窒化アルミニウム基板12と
銅板14とを接合させていた。In the conventional joining method, an aluminum nitride substrate 12 and a copper plate
14, a foil-shaped brazing material 16 was sandwiched, and a heat treatment was performed in vacuum to melt the brazing material 16 and join the aluminum nitride substrate 12 and the copper plate 14.
そして、この銅板14は、窒化アルミニウム基板12と一
体的に形成されてヒートシンクとして働き、窒化アルミ
ニウム基板12の放熱性をより良好にする。さらに、この
銅板14は、配線パターンとして使用できる。The copper plate 14 is formed integrally with the aluminum nitride substrate 12 and functions as a heat sink, thereby improving the heat dissipation of the aluminum nitride substrate 12. Further, this copper plate 14 can be used as a wiring pattern.
（発明が解決しようとする課題） しかしながら、従来の接合方法で製造された接合体で
は、窒化アルミニウム基板とろう材との間の接合強度は
大きいものの、銅の熱膨張率が窒化アルミニウムの４倍
以上とその差が非常に大きいので、熱処理の残留力が大
きかった。そのため、この接合体は温度変化の激しい環
境の下で使用された場合、窒化アルミニウム基板と銅板
との接合強度が劣化したり、窒化アルミニウム基板にク
ラックが発生することがあった。(Problems to be Solved by the Invention) However, in the joined body manufactured by the conventional joining method, although the joining strength between the aluminum nitride substrate and the brazing material is large, the thermal expansion coefficient of copper is four times that of aluminum nitride. Since the difference between the above and the above was very large, the residual force of the heat treatment was large. Therefore, when this bonded body is used in an environment where the temperature changes drastically, the bonding strength between the aluminum nitride substrate and the copper plate may be deteriorated, or cracks may occur in the aluminum nitride substrate.
それゆえに、この発明の主たる目的は、窒化アルミニ
ウム基板と銅板とを十分な強度で接合でき、しかも残留
力が小さく、信頼性の高い接合体を得ることができる窒
化アルミニウム−銅接合方法を提供することである。Therefore, a main object of the present invention is to provide an aluminum nitride-copper bonding method capable of bonding an aluminum nitride substrate and a copper plate with sufficient strength, and having a small residual force and a highly reliable bonded body. That is.
（課題を解決するための手段） この発明は、窒化アルミニウム基板と銅板とを接合す
るための窒化アルミニウム−銅接合方法において、チタ
ン粉末を金属粉末合計重量に対して２〜10重量部添加し
てなり、残部が銀粉末，銅粉末および有機ビヒクルより
なるろう材を使用してろう付けした後、500℃以下の温
度域を２℃/min以下の速度で冷却する、窒化アルミニウ
ム−銅接合方法である。(Means for Solving the Problems) The present invention provides an aluminum nitride-copper bonding method for bonding an aluminum nitride substrate and a copper plate, wherein titanium powder is added in an amount of 2 to 10 parts by weight based on the total weight of the metal powder. After brazing using a brazing material consisting of silver powder, copper powder and an organic vehicle, the remainder is cooled at a rate of 2 ° C./min or less in a temperature range of 500 ° C. or less by an aluminum nitride-copper joining method. is there.
（作用） ろう材中のチタン量を金属粉末合計重量に対して２〜
10重量部に制御することにより、窒化アルミニウム基板
と銅板との十分な接合強度が得られる。それと同時に、
過剰のチタンが銅板中に拡散して銅板を硬化させること
を防ぐ。(Function) The amount of titanium in the brazing filler metal is 2 to the total weight of the metal powder.
By controlling to 10 parts by weight, sufficient bonding strength between the aluminum nitride substrate and the copper plate can be obtained. At the same time,
It prevents excess titanium from diffusing into the copper plate and hardening the copper plate.
また、ろう付けした後の500℃以下での冷却速度を２
℃/min以下とすることにより、ろう材が完全に硬化した
後、冷却中に窒化アルミニウム基板と銅板の冷却収縮量
との差によって生じる応力を銅の降伏−塑性変形−加工
硬化−回復過程の繰り返しによって緩和することができ
る。Also, the cooling rate at 500 ° C or less after brazing is 2
C./min or less, after the brazing material is completely hardened, the stress generated by the difference between the amount of cooling shrinkage of the aluminum nitride substrate and the copper plate during cooling is reduced by the yield of copper-plastic deformation-work hardening-recovery process It can be alleviated by repetition.
（発明の効果） この発明によれば、窒化アルミニウム基板と銅板とを
十分な強度で接合でき、しかも、残留応力が小さく、窒
化アルミニウム基板と銅板との接合体の信頼性を高める
ことができる。(Effects of the Invention) According to the present invention, an aluminum nitride substrate and a copper plate can be joined with sufficient strength, the residual stress is small, and the reliability of the joined body of the aluminum nitride substrate and the copper plate can be increased.
また、この接合体は、窒化アルミニウム基板に銅板を
ろう材で接合したものであるため、極めて放熱性が高
く、たとえばパワーダイオードなどを実装するメタライ
ズ基板として用いるのに好適である。In addition, since this joined body is obtained by joining a copper plate to an aluminum nitride substrate with a brazing material, it has extremely high heat dissipation, and is suitable for use as, for example, a metallized substrate on which a power diode or the like is mounted.
この発明の上述の目的，その他の目的，特徴および利
点は、図面を参照して行う以下の実施例の詳細な説明か
ら一層明らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
（実施例） まず、表１に示す重量比で混合したチタン（Ti）−銅
（Cu）−銀（Ag）混合粉末に、有機ビヒクル５重量％と
溶媒とを加えて５種類のろうペーストないしろう材を作
成した。(Example) First, 5% by weight of an organic vehicle and a solvent were added to a titanium (Ti) -copper (Cu) -silver (Ag) mixed powder mixed at a weight ratio shown in Table 1 to obtain five kinds of wax pastes. We made brazing material.
次に、窒化アルミニウム基板をシート成形法により作
成する。すなわち、窒化アルミニウム原料に焼結助剤と
して酸化イットリウム（Y2O3）を３重量％の割合で添加
し、さらに有機バインダを添加してドクターブレード法
によってシート成形した。こうして成形された窒化アル
ミニウムグリーンシートをN2ガス雰囲気中において800
℃で２時間熱処理し、バインダを飛散させた。この窒化
アルミニウムグリーンシートを窒化ほう素（BN）製のセ
ッタに挟み、N2ガス雰囲気中において1850℃で５時間焼
成して、厚さ650μｍ、１インチ角の窒化アルミニウム
基板を得た。Next, an aluminum nitride substrate is formed by a sheet forming method. That is, yttrium oxide (Y 2 O 3 ) was added as a sintering aid to the aluminum nitride raw material at a ratio of 3% by weight, an organic binder was further added, and a sheet was formed by a doctor blade method. The aluminum nitride green sheet formed in this way is placed in an N 2 gas atmosphere for 800
Heat treatment was performed at 2 ° C. for 2 hours to disperse the binder. The aluminum nitride green sheet was sandwiched between boron nitride (BN) setters and fired in an N 2 gas atmosphere at 1850 ° C. for 5 hours to obtain an aluminum nitride substrate having a thickness of 650 μm and a 1 inch square.
この窒化アルミニウム基板は、次のようにして銅板と
接合した。厚さ300μｍの銅板を2mm角にカットし、片面
に上記５種類のろうペーストを塗布した。塗布した面を
接触するように窒化アルミニウム基板と重ねてセットし
た。これを500kPaの荷重をかけた状態で真空中850℃で1
0分間熱処理を施し、ろうペーストを溶融させて窒化ア
ルミニウム基板と銅板を接合させ、接合体を形成した。
表２には、この熱処理時の冷却速度を示す。This aluminum nitride substrate was bonded to a copper plate as follows. A copper plate having a thickness of 300 μm was cut into a 2 mm square, and the above five kinds of brazing pastes were applied to one surface. The coated surface was set so as to be in contact with the aluminum nitride substrate. This is placed in a vacuum at 850 ° C under a load of 500 kPa,
A heat treatment was performed for 0 minutes to melt the brazing paste and bond the aluminum nitride substrate and the copper plate to form a bonded body.
Table 2 shows the cooling rate during this heat treatment.
次に、この接合体に−65℃〜＋125℃のヒートサイク
ルを200サイクルかけた後、90℃中でピールテストを実
施した。表２には、そのピールテストのピール強度の測
定結果を併せて示す。なお、表２のピール強度の測定値
は、30回の平均値である。また、表1,表２中の＊印はこ
の発明の範囲外のものである。Next, after 200 heat cycles of -65 ° C to + 125 ° C were applied to the joined body, a peel test was performed at 90 ° C. Table 2 also shows the measurement results of the peel strength of the peel test. In addition, the measured value of the peel strength of Table 2 is an average value of 30 times. The asterisks in Tables 1 and 2 are out of the scope of the present invention.
比較例１のように、850℃から室温への冷却速度が２
℃/minであっても、ろう材中のチタン量が１重量部に満
たない場合、ピートサイクル後のピール強度は、1.1kgf
/2mm□であり、1.5kgf/2mm□以下と小さかった。同様
に、比較例３のように、ろう材中のチタン量が10重量部
を超える場合、ピール強度は0.9kgf/2mm□であり、1.5k
gf/2mm□以下と小さかった。As in Comparative Example 1, the cooling rate from 850 ° C. to room temperature was 2
If the amount of titanium in the brazing material is less than 1 part by weight, the peel strength after the peat cycle is 1.1 kgf even at ℃ / min.
/ 2mm □, which was as small as 1.5kgf / 2mm □ or less. Similarly, when the amount of titanium in the brazing filler metal exceeds 10 parts by weight as in Comparative Example 3, the peel strength is 0.9 kgf / 2 mm □, and the peel strength is 1.5 kg.
gf / 2mm □ or less.
一方、実施例1,実施例3,実施例５のように、ろう材中
のチタン量が２重量部から10重量部の場合、ピール強度
は2.0kgf/2mm□以上と大きかった。On the other hand, when the amount of titanium in the brazing material was 2 to 10 parts by weight as in Examples 1, 3 and 5, the peel strength was as large as 2.0 kgf / 2 mm □ or more.
また、熱処理時の冷却速度が２℃/minを超える場合
（比較例２）は、同一のろう材を用いても、冷却速度が
２℃/min以下で除冷した場合（実施例2,実施例３）に比
べて、ピール強度は極端に低下した。しかし、実施例４
のように、冷却域のうち500℃以下の部分を、冷却速度
２℃/min以下で除冷してやれば、ピール強度は2.0kgf/2
mm□を低下しなかった。When the cooling rate during the heat treatment exceeds 2 ° C./min (Comparative Example 2), the cooling rate is 2 ° C./min or less even when the same brazing material is used (Examples 2 and 3). The peel strength was extremely reduced as compared with Example 3). However, Example 4
If the part of the cooling area below 500 ° C is cooled at a cooling rate of 2 ° C / min or less, the peel strength will be 2.0kgf / 2
mm □ did not decrease.
これらの実験例からわかるように、ろう材中のチタン
量を２〜10重量部に制御することにより、窒化アルミニ
ウム基板と銅板との十分な接合強度が得られ、ヒートサ
イクル後のピール強度が大きい。As can be seen from these experimental examples, by controlling the amount of titanium in the brazing material to 2 to 10 parts by weight, sufficient bonding strength between the aluminum nitride substrate and the copper plate is obtained, and the peel strength after a heat cycle is large. .
また、ろう付けした後の500℃以下での冷却速度を２
℃/min以下とすると、ピール強度が大きく、窒化アルミ
ニウム基板と銅板との接合体の信頼性を高めることがで
きる。Also, the cooling rate at 500 ° C or less after brazing is 2
When the temperature is not more than ° C./min, the peel strength is large, and the reliability of the joined body between the aluminum nitride substrate and the copper plate can be increased.
第１図はこの発明の背景となり、かつ、この発明が適用
される窒化アルミニウム基板と銅板との接合体を示す側
面図である。 図において、10は接合体、12は窒化アルミニウム基板、
14は銅板、16はろう材を示す。FIG. 1 is a side view showing a joined body of an aluminum nitride substrate and a copper plate to which the present invention is applied, which is the background of the present invention. In the figure, 10 is a joined body, 12 is an aluminum nitride substrate,
14 indicates a copper plate, and 16 indicates a brazing material.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｃ０４Ｂ 37/02 Ｃ０４Ｂ 37/02 Ｂ Ｈ０５Ｋ 3/00 Ｈ０５Ｋ 3/00 Ｒ 3/38 3/38 Ｃ (56)参考文献 特開 平２−149478（ＪＰ，Ａ) 特開 平２−208031（ＪＰ，Ａ) 特開 平４−170374（ＪＰ，Ａ) 特開 平４−349175（ＪＰ，Ａ) 特開 昭63−239173（ＪＰ，Ａ) 特開 平２−64070（ＪＰ，Ａ) 特開 平３−261672（ＪＰ，Ａ) 特開 平２−196074（ＪＰ，Ａ) 特開 平４−168792（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) B23K 1/19 B23K 31/02 310 C04B 37/02 H05K 3/38 H05K 3/00 B23K 35/30 310────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 6 Identification symbol FI C04B 37/02 C04B 37/02 B H05K 3/00 H05K 3/00 R 3/38 3/38 C (56) References JP JP-A-2-149478 (JP, A) JP-A-2-208011 (JP, A) JP-A-4-170374 (JP, A) JP-A-4-349175 (JP, A) JP-A-63-239173 (JP) JP-A-2-64070 (JP, A) JP-A-3-261672 (JP, A) JP-A-2-196074 (JP, A) JP-A-4-168792 (JP, A) (58) Surveyed field (Int.Cl. 6 , DB name) B23K 1/19 B23K 31/02 310 C04B 37/02 H05K 3/38 H05K 3/00 B23K 35/30 310
Claims (1)
ための窒化アルミニウム−銅接合方法において、 チタン粉末を金属粉末合計重量に対して２〜10重量部添
加してなり、残部が銀粉末，銅粉末および有機ビヒクル
よりなるろう材を使用してろう付けした後、500℃以下
の温度域を２℃/min以下の速度で冷却することを特徴と
する、窒化アルミニウム−銅接合方法。1. An aluminum nitride-copper bonding method for bonding an aluminum nitride substrate and a copper plate, wherein titanium powder is added in an amount of 2 to 10 parts by weight based on the total weight of the metal powder, and the balance is silver powder, copper powder. An aluminum nitride-copper bonding method, characterized in that after brazing using a brazing material comprising a powder and an organic vehicle, a temperature range of 500 ° C or less is cooled at a rate of 2 ° C / min or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27955690A JP2861357B2 (en) | 1990-10-17 | 1990-10-17 | Aluminum nitride-copper bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27955690A JP2861357B2 (en) | 1990-10-17 | 1990-10-17 | Aluminum nitride-copper bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04172176A JPH04172176A (en) | 1992-06-19 |
| JP2861357B2 true JP2861357B2 (en) | 1999-02-24 |
Family
ID=17612617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27955690A Expired - Lifetime JP2861357B2 (en) | 1990-10-17 | 1990-10-17 | Aluminum nitride-copper bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2861357B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105499732B (en) * | 2015-12-30 | 2018-01-26 | 连云港丰达电子有限公司 | A kind of welding production technique for the commutation diode for being not easy to puncture |
| CN105562868B (en) * | 2016-01-15 | 2018-11-23 | 山东融创电子科技有限公司 | A kind of semiconductor material welding technique for diode fabrication process |
| CN106270871A (en) * | 2016-11-01 | 2017-01-04 | 株洲中车时代电气股份有限公司 | The welding method of a kind of semiconductor device and welding system |
| CN111656518B (en) * | 2018-02-13 | 2023-05-16 | 三菱综合材料株式会社 | Copper-titanium-aluminum junction, insulating circuit board with heat sink, power or LED or thermoelectric module |
-
1990
- 1990-10-17 JP JP27955690A patent/JP2861357B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04172176A (en) | 1992-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5023165B2 (en) | Ceramic circuit board | |
| JPH07202063A (en) | Ceramic circuit board | |
| JP2003017627A (en) | Ceramic circuit board and semiconductor module using the same | |
| JP3152344B2 (en) | Ceramic circuit board | |
| JP2698780B2 (en) | Silicon nitride circuit board | |
| JP4104253B2 (en) | Board integrated structure | |
| JPH05347469A (en) | Ceramic circuit board | |
| JP3193305B2 (en) | Composite circuit board | |
| JP2861357B2 (en) | Aluminum nitride-copper bonding method | |
| JP2772273B2 (en) | Silicon nitride circuit board | |
| JPH08102570A (en) | Ceramic circuit board | |
| JP2001217362A (en) | Laminated heat dissipating member, power semiconductor device using it, and method of production | |
| JP4557398B2 (en) | Electronic element | |
| JP2772274B2 (en) | Composite ceramic substrate | |
| JP4772187B2 (en) | AlN sintered body and AlN circuit board using the same | |
| JPH1067586A (en) | Circuit base plate for power module and its production | |
| JP4476428B2 (en) | Aluminum nitride circuit board and manufacturing method thereof | |
| JPH0477369A (en) | Production of metal-ceramic laminated substrate | |
| JP3560357B2 (en) | Manufacturing method of aluminum nitride sintered body | |
| JP2751473B2 (en) | High thermal conductive insulating substrate and method of manufacturing the same | |
| JPH06263554A (en) | Jointed substrate of ceramics-metal | |
| JP2002033423A (en) | Module structure | |
| JPH09260546A (en) | Ceramic circuit board and semiconductor device using the board | |
| JP3529055B2 (en) | Insulating heat sink | |
| JP2005019750A (en) | Ceramic circuit board and its manufacturing method, and electric circuit module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20071211 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20081211 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081211 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091211 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101211 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term |