JP3257869B2 - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JP3257869B2 JP3257869B2 JP20946893A JP20946893A JP3257869B2 JP 3257869 B2 JP3257869 B2 JP 3257869B2 JP 20946893 A JP20946893 A JP 20946893A JP 20946893 A JP20946893 A JP 20946893A JP 3257869 B2 JP3257869 B2 JP 3257869B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- circuit board
- copper
- circuit
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
Landscapes
- Structure Of Printed Boards (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、金属回路と金属放熱板
を有するセラミックス基板からなる回路基板の改良に関
するものであって、電子部品のパワーモジュール等に使
用されるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a circuit board composed of a ceramic substrate having a metal circuit and a metal radiator plate, and is used for a power module of an electronic component.
【0002】近年、ロボットやモーター等の産業機器の
高性能化に伴い、大電力・高能率インバーター等大電力
モジュールの変遷が進んでおり、半導体素子から発生す
る熱も増加の一途をたどっている。この熱を効率よく放
散させるため、大電力モジュール基板では従来より様々
な方法が取られてきた。特に最近、良好な熱伝導性を有
するセラミックス基板が利用できるようになったため、
基板上に銅板等の金属板を接合し、回路を形成後、その
ままあるいはメッキ等の処理を施してから半導体素子を
実装する構造も採用されつつある。[0002] In recent years, with the advancement of the performance of industrial equipment such as robots and motors, the transition of high-power modules such as high-power and high-efficiency inverters has been progressing, and the heat generated from semiconductor elements has been increasing steadily. . In order to efficiently dissipate this heat, various methods have conventionally been used for large power module substrates. Especially recently, ceramic substrates with good thermal conductivity have become available,
A structure in which a metal plate such as a copper plate is bonded on a substrate to form a circuit, and then a semiconductor element is mounted as it is or after performing a process such as plating has been adopted.
【0003】金属とセラミックスを接合する方法には種
々あるが、回路基板の製造という点からは、Mo−Mn
法、活性金属ろう付け法、硫化銅法、DBC法、銅メタ
ライズ法等があげられる。There are various methods for joining a metal and a ceramic, but from the viewpoint of manufacturing a circuit board, Mo-Mn
Method, active metal brazing method, copper sulfide method, DBC method, copper metallizing method and the like.
【0004】特に大電力モジュール基板では、従来のア
ルミナに変わって高熱伝導性の窒化アルミニウム基板が
注目されており、銅板の接合方法としては、銅板と窒化
アルミニウム基板との間に活性金属を含むろう材(以
下、単に「ろう材」という)を介在させ、加熱処理して
接合体とする活性金属ろう付け法(例えば特開昭60-177
634 号公報)や、表面が酸化処理された窒化アルミニウ
ム基板と銅板とを銅の融点以下でCu−Oの共晶温度以
上で加熱接合するDBC法(例えば特開昭56-163093 号
公報)等がある。In particular, in the case of high power module substrates, attention has been paid to aluminum nitride substrates having high thermal conductivity in place of conventional alumina, and a method of bonding a copper plate will include an active metal between the copper plate and the aluminum nitride substrate. An active metal brazing method (hereinafter referred to simply as "brazing material"), which is subjected to a heat treatment to form a joined body (for example, Japanese Unexamined Patent Publication No. 60-177)
No. 634), and a DBC method in which an aluminum nitride substrate whose surface is oxidized and a copper plate are heated and joined at a temperature lower than the melting point of copper and higher than the eutectic temperature of Cu—O (for example, JP-A-56-163093). There is.
【0005】活性金属ろう付け法は、DBC法に比べて
以下の利点がある。 (1)接合体を得るための処理温度が低いので、窒化ア
ルミニウム基板と銅板の熱膨張差によって生じる残留応
力が小さい。 (2)ろう材が延性金属であるので、ヒートショックや
ヒートサイクルに対する耐久性が大である。[0005] The active metal brazing method has the following advantages over the DBC method. (1) Since the processing temperature for obtaining the joined body is low, the residual stress caused by the difference in thermal expansion between the aluminum nitride substrate and the copper plate is small. (2) Since the brazing material is a ductile metal, the durability against heat shock and heat cycle is high.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、活性金
属ろう付け法を用いても、ヒートショックやヒートサイ
クル等の熱衝撃、熱履歴によって生じる損傷に対して充
分な耐久性があるとはいえず新しい技術の提案が待たれ
ていた。そこで、金属放熱板(通常はセラミックス基板
の下面に設けられる)の体積を金属回路(通常はセラミ
ックス基板の上面に設けられる)の体積の50〜90%
となるように調整したり(特開昭63-24815号公報)、金
属放熱板の厚さを金属回路のそれの50%以下にする
(特開平5-170564号公報)ことによってある程度は改善
された。However, even if the active metal brazing method is used, it cannot be said that it has sufficient durability against damage caused by heat shock and heat history such as heat shock and heat cycle, and a new method is used. Technology proposals were awaited. Therefore, the volume of the metal heat sink (usually provided on the lower surface of the ceramic substrate) is 50 to 90% of the volume of the metal circuit (usually provided on the upper surface of the ceramic substrate).
It is improved to some extent by adjusting the thickness of the metal heat sink to 50% or less of that of the metal circuit (Japanese Patent Laid-Open No. 5-170564). Was.
【0007】しかし、これらの技術においては、金属回
路と金属放熱板の材質は共に銅であるので、両者の体積
を変えることは熱膨張による応力のバランスが異なった
ものとなる。その結果、接合体自体の耐熱衝撃性は良好
となり、金属回路又は金属放熱板が剥離することが少な
くなったが、金属放熱板にベース銅板、金属回路に半導
体素子をそれぞれ半田付けする際の急激な温度上昇によ
って接合体の反りの変位が著しくなって金属放熱板とベ
ース銅板との間に隙間ができ、その部分が半田付け後に
ボイドとなる危険性があった。However, in these techniques, since the material of the metal circuit and the metal radiator plate are both copper, changing the volume of the two results in a different balance of stress due to thermal expansion. As a result, the thermal shock resistance of the joined body itself was improved, and the metal circuit or the metal radiator plate was less likely to peel.However, when the base copper plate was soldered to the metal radiator plate and the semiconductor element was soldered to the metal circuit, respectively. Due to the excessive temperature rise, the displacement of the warpage of the joined body becomes remarkable, and a gap is formed between the metal heat radiating plate and the base copper plate, and there is a risk that the portion becomes a void after soldering.
【0008】本発明者らは、以上のような問題点を解消
するために鋭意検討を重ねた結果、接合体又は回路基板
に荷重を加えながら熱処理を施すことによって、温度2
50℃に加熱した場合における反り量を200μm以下
に調節すれば良いことを見いだし、本発明を完成させた
ものである。The present inventors have conducted intensive studies in order to solve the above-mentioned problems, and as a result, by applying a heat treatment while applying a load to the joined body or the circuit board, the temperature of the joined body or the circuit board is reduced.
It has been found that the amount of warpage when heated to 50 ° C. can be adjusted to 200 μm or less, and the present invention has been completed.
【0009】[0009]
【課題を解決するための手段】すなわち、本発明は、セ
ラミックス基板の一方の面に金属回路、他方の面には金
属放熱板が設けられてなるものであって、金属回路の厚
みが0.3mmよりも大きく、しかも温度250℃に加
熱したときの反り量が200μm以下であることを特徴
とする回路基板である。That is, according to the present invention, a ceramic substrate is provided with a metal circuit on one side and a metal heat radiating plate on the other side. A circuit board characterized by being larger than 3 mm and having a warpage of 200 μm or less when heated to a temperature of 250 ° C.
【0010】以下、さらに詳しく本発明について説明す
ると、本発明で使用されるセラミックス基板としては、
窒化アルミニウム基板、ベリリア基板、アルミナ基板等
をあげることができるが、中でも窒化アルミニウム基板
が好ましく、その焼結密度は、機械的強度及び電気特性
の点から相対密度95%以上であることが望ましい。セ
ラミックス基板の厚みとしては、0.4〜0.7mm程
度が好ましい。Hereinafter, the present invention will be described in more detail. As the ceramic substrate used in the present invention,
Examples thereof include an aluminum nitride substrate, a beryllia substrate, and an alumina substrate. Among them, an aluminum nitride substrate is preferable, and the sintered density thereof is desirably 95% or more in terms of mechanical strength and electrical characteristics. The thickness of the ceramic substrate is preferably about 0.4 to 0.7 mm.
【0011】一方、金属回路及び/又は金属放熱板とし
ては、銅、アルミニウム、タングステン、モリブデン等
が使用されるが、銅が一般的である。金属回路の厚みと
しては、近年、電流密度が増大していく傾向から0.3
mmよりも厚いことが必要であり、また金属放熱板の厚
みは、熱抵抗を下げるために0.2mm以下であること
が好ましい。On the other hand, copper, aluminum, tungsten, molybdenum, or the like is used as the metal circuit and / or the metal heat sink, but copper is generally used. In recent years, the thickness of the metal circuit is 0.3
mm, and the thickness of the metal heat sink is preferably 0.2 mm or less in order to reduce the thermal resistance.
【0012】セラミックス基板の一方の面に金属回路、
他方の面に金属放熱板を設ける方法としては、セラミッ
クス基板と金属板との接合体をエッチングする方法、金
属板から打ち抜かれた金属回路及び/又は金属放熱板の
パターンをセラミックス基板に接合する方法等によって
行うことでき、これらの際における金属板又はパターン
とセラミックス基板との接合方法としては、活性金属ろ
う付け法やDBC法等を採用することができる。A metal circuit is provided on one side of the ceramic substrate,
As a method of providing a metal heat sink on the other surface, a method of etching a joined body of a ceramic substrate and a metal plate, a method of joining a metal circuit punched from a metal plate and / or a pattern of a metal heat sink to a ceramic substrate For example, an active metal brazing method, a DBC method, or the like can be used as a bonding method between the metal plate or pattern and the ceramic substrate in these cases.
【0013】活性金属ろう付け法におけるろう材の金属
成分は、銀と銅を主成分とし、溶融時のセラミックス基
板との濡れ性を確保するために活性金属を副成分とす
る。この活性金属成分は、セラミックス基板と反応して
酸化物や窒化物を生成させ、それらの生成物がろう材と
セラミックス基板との結合を強固なものにする。活性金
属の具体例をあげれば、チタン、ジルコニウム、ハフニ
ウム、ニオブ、タンタル、バナジウム及びこれらの化合
物である。これらの比率としては、銀69〜75重量部
と銅25〜31重量部の合計量100重量部あたり活性
金属3〜35重量部である。The metal component of the brazing filler metal in the active metal brazing method contains silver and copper as main components, and the active metal as a subcomponent in order to ensure wettability with the ceramic substrate during melting. The active metal component reacts with the ceramic substrate to generate oxides and nitrides, and these products strengthen the bond between the brazing material and the ceramic substrate. Specific examples of the active metal include titanium, zirconium, hafnium, niobium, tantalum, vanadium and compounds thereof. These ratios are 3 to 35 parts by weight of the active metal per 100 parts by weight of the total of 69 to 75 parts by weight of silver and 25 to 31 parts by weight of copper.
【0014】活性金属ろう付け法で使用されるろう材ペ
ーストは、上記ろう材の金属成分に有機溶剤及び必要に
応じて有機結合剤を加え、ロール、ニーダ、バンバリミ
キサー、万能混合器、らいかい機等で混合することによ
って調整することができる。有機溶剤としては、メチル
セルソルブ、テルピネオール、イソホロン、トルエン
等、また有機結合剤としては、エチルセルロース、メチ
ルセルロース、ポリメチルメタクリレート等が使用され
る。なお、金属回路又は金属放熱板の材質がアルミニウ
ムである場合には、上記ろう材である必要はなく、例え
ばアルミニウムとシリコンを金属成分とするものでも充
分である。The brazing material paste used in the active metal brazing method is prepared by adding an organic solvent and, if necessary, an organic binder to the metal component of the brazing material, and preparing a roll, kneader, Banbury mixer, universal mixer, raika It can be adjusted by mixing with a machine or the like. Examples of the organic solvent include methylcellosolve, terpineol, isophorone, and toluene, and examples of the organic binder include ethylcellulose, methylcellulose, and polymethylmethacrylate. When the material of the metal circuit or the metal radiator plate is aluminum, it is not necessary to use the above brazing material. For example, a material containing aluminum and silicon as metal components is sufficient.
【0015】本発明は、このような回路基板において、
温度250℃に加熱した場合における反り量が200μ
m以下であるようにしたことが大きな特徴である。従来
技術においては、電気伝導性等の点から、金属回路又は
金属放熱板の材質は、無酸素銅又はそれに僅かな酸素を
混入させたタフピッチ銅が好ましく使用されている。こ
のような銅の熱膨張係数は、文献値とほぼ等しく17×
10-6/℃であり、セラミックス基板例えば窒化アルミ
ニウム基板の4.5×10-6/℃よりも大きいので回路
基板に熱が加えられたときに熱応力が発生していた。The present invention relates to such a circuit board,
200μ warpage when heated to 250 ° C
A major feature is that the distance is equal to or less than m. In the prior art, from the viewpoint of electrical conductivity and the like, the material of the metal circuit or the metal radiator plate is preferably oxygen-free copper or tough pitch copper mixed with a small amount of oxygen. The coefficient of thermal expansion of such copper is approximately equal to the literature value, 17 ×
Since it is 10 −6 / ° C., which is larger than 4.5 × 10 −6 / ° C. of a ceramic substrate, for example, an aluminum nitride substrate, thermal stress is generated when heat is applied to the circuit substrate.
【0016】また、金属回路と金属放熱板の体積比を変
える方法においては、金属板とセラミックス基板との接
合体の製造時や、得られた回路基板をベース銅板に取り
つける等の際、さらにはその使用時に温度差からくる熱
衝撃等によって熱応力がかかる機会が多かったことは上
記したとおりである。In the method of changing the volume ratio between the metal circuit and the metal radiator plate, the method may be used when manufacturing a joined body of a metal plate and a ceramic substrate, or when attaching the obtained circuit board to a base copper plate. As described above, there were many opportunities to apply thermal stress due to thermal shock or the like resulting from a temperature difference during use.
【0017】しかしながら、金属回路の厚みは電流容量
を保つために今後はますます厚くなる方向にあり、また
金属放熱板は、熱抵抗を下げる点からも薄い方が望まし
い。そこで、本発明は、このような構造の回路基板であ
っても、熱応力がセラミックス基板になるべく伝わらな
いようにするため、接合体又は回路基板を製造した後
に、0.3〜10kg/cm2 の荷重を加えながら、窒
素等の不活性雰囲気下、温度100〜200℃で1〜2
4時間保持後、荷重を除いて冷却する方法等によって、
温度250℃に加熱した場合における回路基板の反り量
が200μm以下であるようにしたものである。However, the thickness of the metal circuit is going to become increasingly thicker in the future in order to maintain the current capacity, and it is desirable that the metal radiating plate is thinner from the viewpoint of lowering the thermal resistance. In order to prevent thermal stress from being transmitted to the ceramic substrate as much as possible even in the case of a circuit board having such a structure, the present invention provides a method for manufacturing a joined body or a circuit board, which is performed after 0.3 to 10 kg / cm 2. Under an inert atmosphere such as nitrogen at a temperature of 100 to 200 ° C. while applying a load of
After holding for 4 hours, remove the load and cool down.
The warpage of the circuit board when heated to a temperature of 250 ° C. is 200 μm or less.
【0018】[0018]
【実施例】以下、本発明を実施例と比較例をあげて具体
的に説明する。 実施例1〜3 比較例1〜7 銀粉末75重量部、銅粉末25重量部、ジルコニウム粉
末5重量部、 テルピネオール15重量部及び有機結合剤
としてポリイソブチルメタアクリレートのトルエン溶液
を固形分で1.5重量部を加えてよく混練し、ろう材ペ
ーストを調整した。このろう材ペーストを60×30×
0.65mmの窒化アルミニウム基板の両面にスクリー
ン印刷によって全面に塗布した。その際の塗布量(乾燥
後)は6〜8mg/cm2 とした。The present invention will be specifically described below with reference to examples and comparative examples. Examples 1 to 3 Comparative Examples 1 to 7 75 parts by weight of silver powder, 25 parts by weight of copper powder, 5 parts by weight of zirconium powder, 15 parts by weight of terpineol and a toluene solution of polyisobutyl methacrylate as an organic binder in a solid content of 1. 5 parts by weight were added and kneaded well to prepare a brazing filler metal paste. This brazing material paste is 60 × 30 ×
The entire surface was coated on both sides of a 0.65 mm aluminum nitride substrate by screen printing. The coating amount (after drying) at that time was 6 to 8 mg / cm 2 .
【0019】次に、ろう材ペーストの塗布された窒化ア
ルミニウム基板の表面には60×30×0.5mmの銅
板を、そして裏面には60×30×0.2mmの銅板を
それぞれ接触配置してから、表1に示す荷重を加えて炉
に投入し、高真空中、温度900℃で30分加熱した
後、2℃/ 分の速度で冷却して接合体を製造した。Next, a 60.times.30.times.0.5 mm copper plate is placed on the front surface of the aluminum nitride substrate on which the brazing material paste is applied, and a 60.times.30.times.0.2 mm copper plate is placed on the back surface of the aluminum nitride substrate. Then, the load shown in Table 1 was applied to the furnace, the mixture was heated in a high vacuum at a temperature of 900 ° C. for 30 minutes, and then cooled at a rate of 2 ° C./min to produce a joined body.
【0020】得られた接合体の銅板上にUV硬化タイプ
のエッチングレジストをスクリーン印刷で回路パターン
に塗布後、塩化第2銅溶液を用いてエッチング処理を行
って銅板不要部分を溶解除去し、さらにエッチングレジ
ストを5%苛性ソーダ溶液で剥離した。このエッチング
処理後の回路基板には、銅回路間等に残留不要ろう材や
活性金属成分と窒化アルミニウム基板との反応物がある
ので、それを除去するため、温度60℃、10%フッ化
アンモニウム溶液に10分間浸漬した。得られた回路基
板を表1に示す条件で熱処理を行った後、荷重を除いて
室温まで冷却した。After a UV-curable etching resist is applied to the circuit pattern by screen printing on the copper plate of the obtained joined body, an etching process is performed using a cupric chloride solution to dissolve and remove unnecessary portions of the copper plate. The etching resist was stripped with a 5% sodium hydroxide solution. In the circuit board after the etching process, there is a residual unnecessary brazing material or a reaction product between the active metal component and the aluminum nitride substrate between the copper circuits and the like. Dipped in the solution for 10 minutes. After the obtained circuit board was subjected to a heat treatment under the conditions shown in Table 1, the load was removed and the circuit board was cooled to room temperature.
【0021】以上のようにして製作された回路基板につ
いてヒートサイクル(熱衝撃)試験を行った。ヒートサ
イクル試験は、気中、−40℃×30分保持後、25℃
×10分間放置、さらに125℃×30分保持後、25
℃×10分間放置を1サイクルとして行い、銅が剥離開
始したヒートサイクル回数を測定した。また、温度25
0℃の空気中で5時間加熱したときの回路基板の反り量
を非接触式レーザー変位計で測定した。さらには、温度
250℃のリフロー炉中、回路基板を厚さ4mmのベー
ス銅板に無荷重で半田付けを行った後、ボイドを超音波
探査機で測定し、ボイド発生率(%)を(ボイド面積/
回路基板面積)×100として算出した。これらの結果
を表1に示す。A heat cycle (thermal shock) test was performed on the circuit board manufactured as described above. The heat cycle test was carried out at -40 ° C for 30 minutes in air, then at 25 ° C.
X 10 minutes, and after further holding at 125 ° C x 30 minutes, 25
One cycle of standing at 10 ° C. × 10 minutes was performed, and the number of heat cycles at which copper peeling started was measured. In addition, temperature 25
The amount of warpage of the circuit board when heated in air at 0 ° C. for 5 hours was measured by a non-contact laser displacement meter. Furthermore, in a reflow furnace at a temperature of 250 ° C., the circuit board was soldered to the base copper plate having a thickness of 4 mm with no load, and the void was measured with an ultrasonic probe to determine the void generation rate (%). area/
It was calculated as (circuit board area) × 100. Table 1 shows the results.
【0022】[0022]
【表1】 (注)回路基板の反りの方向は回路面が凹となる方向を
+として表示してある。[Table 1] (Note) The direction of warpage of the circuit board is indicated by + in the direction in which the circuit surface is concave.
【0023】[0023]
【発明の効果】本発明の回路基板は、温度変化による反
りの変位が著しく小さいので、これをベース銅板に半田
付けする際のボイドの発生が減少し、しかも熱衝撃や熱
履歴に対する耐久性すなわち耐ヒートサイクル性が向上
する。According to the circuit board of the present invention, the displacement of the warpage due to the temperature change is extremely small, so that the occurrence of voids when soldering the circuit board to the base copper plate is reduced, and the durability against thermal shock and thermal history, that is, Heat cycle resistance is improved.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 実開 平4−32557(JP,U) (58)調査した分野(Int.Cl.7,DB名) H05K 1/02 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-U 4-32557 (JP, U) (58) Field surveyed (Int. Cl. 7 , DB name) H05K 1/02
Claims (1)
路、他方の面には金属放熱板が設けられてなるものであ
って、金属回路の厚みが0.3mmよりも大きく、しか
も温度250℃に加熱したときの反り量が200μm以
下であることを特徴とする回路基板。A metal circuit is provided on one surface of a ceramic substrate, and a metal radiator plate is provided on the other surface, wherein the thickness of the metal circuit is greater than 0.3 mm and the temperature is 250 ° C. A circuit board having a warpage of 200 μm or less when heated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20946893A JP3257869B2 (en) | 1993-08-24 | 1993-08-24 | Circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20946893A JP3257869B2 (en) | 1993-08-24 | 1993-08-24 | Circuit board |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0766507A JPH0766507A (en) | 1995-03-10 |
JP3257869B2 true JP3257869B2 (en) | 2002-02-18 |
Family
ID=16573366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20946893A Expired - Lifetime JP3257869B2 (en) | 1993-08-24 | 1993-08-24 | Circuit board |
Country Status (1)
Country | Link |
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JP (1) | JP3257869B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3890539B2 (en) * | 1996-04-12 | 2007-03-07 | Dowaホールディングス株式会社 | Ceramic-metal composite circuit board |
JP4839461B2 (en) * | 2001-02-23 | 2011-12-21 | Dowaメタルテック株式会社 | Method for manufacturing aluminum oxide circuit board |
JP4692708B2 (en) * | 2002-03-15 | 2011-06-01 | Dowaメタルテック株式会社 | Ceramic circuit board and power module |
JP2010267997A (en) * | 2010-08-04 | 2010-11-25 | Dowa Holdings Co Ltd | Ceramics circuit substrate and power module |
JP7045978B2 (en) | 2018-12-07 | 2022-04-01 | 三菱電機株式会社 | Semiconductor devices and power converters |
-
1993
- 1993-08-24 JP JP20946893A patent/JP3257869B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0766507A (en) | 1995-03-10 |
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