JP2000178081A - Metal-ceramic jointed substrate - Google Patents
Metal-ceramic jointed substrateInfo
- Publication number
- JP2000178081A JP2000178081A JP10375809A JP37580998A JP2000178081A JP 2000178081 A JP2000178081 A JP 2000178081A JP 10375809 A JP10375809 A JP 10375809A JP 37580998 A JP37580998 A JP 37580998A JP 2000178081 A JP2000178081 A JP 2000178081A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- ceramic
- brazing material
- substrate
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Ceramic Products (AREA)
- Glass Compositions (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は金属−セラミックス
接合基板、より詳細には銅−窒化アルミニウム接合基板
に関するものである。The present invention relates to a metal-ceramic bonding substrate, and more particularly, to a copper-aluminum nitride bonding substrate.
【０００２】[0002]
【従来の技術】金属とセラミックス、例えばＣｕとＡＩ
Ｎ基板を接合する場合、ろう付け方法（特開昭６０−１
７７６３４号、特開平３−１０１１５３号）や直接接合
法（特開昭５６−１６３０９３号）などが知られてい
る。このうち、ろう付け方法である特開昭６０−１７７
６３４号には、ＣｕとＡＩＮ基板の間に活性金属とし
て、Ｔｉ箔を挿入して、これを加熱溶融することでＣｕ
とＡＩＮを接合することが開示されている。また、特開
平３−１０１１５３号には、銅、銀及び活性金属とし
て、水素化チタンの粉末に有機溶剤、有機結合剤を配合
したろう材を用いて、ＣｕとＡＩＮを接合させている。2. Description of the Related Art Metals and ceramics, such as Cu and AI
When joining N substrates, a brazing method (Japanese Unexamined Patent Publication No.
No. 77634, JP-A-3-101153) and a direct joining method (JP-A-56-163093) are known. Among them, the brazing method disclosed in Japanese Patent Laid-Open No. 60-177
No. 634 discloses a method in which a Ti foil is inserted as an active metal between Cu and an AIN substrate, and the Cu foil is melted by heating.
And AIN are disclosed. In Japanese Patent Application Laid-Open No. 3-101153, Cu and AIN are joined by using a brazing material obtained by mixing an organic solvent and an organic binder with powder of titanium hydride as copper, silver and an active metal.
【０００３】[0003]
【発明が解決しようとする課題】然しながら、Ｔｉなど
の活性金属を含有したろう材を用いて銅と窒化アルミニ
ウムを接合させた基板は、半導体組立て工程、即ち半導
体素子と銅板を接合するための半田付け工程などの温度
上昇を伴う熱処理工程を経ると、接合基板の抗折強度
が、熱処理前の初期の接合状態の時に比較して大きく低
下してしまうという問題点があった。However, a substrate in which copper and aluminum nitride are joined by using a brazing material containing an active metal such as Ti is used in a semiconductor assembly process, that is, a solder for joining a semiconductor element and a copper plate. After a heat treatment step involving an increase in temperature, such as an attaching step, there is a problem that the transverse rupture strength of the bonded substrate is greatly reduced as compared with the initial bonding state before the heat treatment.
【０００４】そこで、本発明においては、接合基板の抗
折強度が半田付け工程の熱処理によっても低下しにくい
金属−セラミックス接合基板を提供することを課題とし
ている。Accordingly, an object of the present invention is to provide a metal-ceramic bonding substrate in which the bending strength of the bonding substrate is hardly reduced even by the heat treatment in the soldering step.
【０００５】[0005]
【課題を解決するための手段】本発明は金属とセラミッ
クス、例えば銅と窒化アルミニウム基板を接合するに際
して、Ｔｉなどの活性金属を添加したろう材の替わり
に、ホウケイ酸鉛ガラス或いはホウケイ酸鉛亜鉛ガラス
を添加したろう材、或いは更に添加成分として活性金属
であるＴｉ，Ｈｆ，Ｚｒの少なくとも１種を添加したろ
う材を用いることを特徴としている。According to the present invention, a lead borosilicate glass or a lead zinc borosilicate is used instead of a brazing material to which an active metal such as Ti is added when joining a metal and a ceramic, for example, copper and an aluminum nitride substrate. It is characterized by using a brazing material to which glass is added or a brazing material to which at least one of active metals Ti, Hf, and Zr is further added.
【０００６】接合基板の抗折強度が低下する原因は良く
判っていないが、例えば銅と窒化アルミニウムを接合し
た後に再度熱を加えることによって残留応力が基板に発
生して、その影響で基板の抗折強度が低下すると考えら
れる。そこで、ホウケイ酸鉛ガラス或いはホウケイ酸鉛
亜鉛ガラスといったガラス成分を添加したろう材を接合
基板に用いることで、従来のケミカルボンドと言われる
接合状態からガラスボンドの接合状態にすることによ
り、接合基板に発生する残留応力をこのガラスボンドに
よってうまく緩和或いは吸収するものと考えられる。そ
の結果接合基板の加熱後の抗折強度も、従来のケミカル
ボンドの接合基板に比較すると、その低下の割合が低く
抑えられる効果がある。Although the cause of the decrease in the bending strength of the bonded substrate is not well understood, residual stress is generated in the substrate by, for example, reapplying heat after bonding copper and aluminum nitride. It is considered that the folding strength decreases. Therefore, by using a brazing material to which a glass component such as lead borosilicate glass or lead zinc borosilicate glass is added for the bonding substrate, the bonding state is changed from a conventional bonding state called a chemical bond to a glass bonding state. It is considered that the residual stress generated in the glass bond is successfully alleviated or absorbed by the glass bond. As a result, there is an effect that the bending strength of the bonded substrate after heating is reduced at a lower rate as compared with a conventional bonded substrate made of a chemical bond.
【０００７】本発明の金属−セラミックス接合基板は、
金属とセラミックスはホウケイ酸鉛ガラスを含むろう材
により接合されていることを特徴とする。[0007] The metal-ceramic bonding substrate of the present invention comprises:
The feature is that the metal and the ceramic are joined by a brazing material containing lead borosilicate glass.
【０００８】また、本発明の金属−セラミックス接合基
板は、金属が銅でセラミックスが窒化アルミニウムであ
ることを特徴とする。Further, the metal-ceramic bonding substrate of the present invention is characterized in that the metal is copper and the ceramic is aluminum nitride.
【０００９】上記ホウケイ酸鉛ガラスは、その成分とし
て７０ｗｔ％以上の酸化鉛を含んでいることを特徴とす
る。The above-mentioned lead borosilicate glass is characterized in that it contains 70% by weight or more of lead oxide as a component thereof.
【００１０】また、本発明の金属−セラミックス接合基
板は、金属とセラミックスがホウケイ酸鉛亜鉛ガラスを
含むろう材により接合されていることを特徴とする。Further, the metal-ceramic bonding substrate of the present invention is characterized in that the metal and the ceramic are bonded by a brazing material containing lead zinc borosilicate glass.
【００１１】また、本発明の金属−セラミックス接合基
板は、金属が銅でセラミックスが窒化アルミニウムであ
ることを特徴とする。Further, the metal-ceramic bonding substrate of the present invention is characterized in that the metal is copper and the ceramic is aluminum nitride.
【００１２】上記ホウケイ酸鉛亜鉛ガラスは、その成分
として５ｗｔ％以上の酸化亜鉛を含んでいることを特徴
とする。The lead zinc borosilicate glass is characterized in that it contains 5 wt% or more of zinc oxide as a component thereof.
【００１３】上記ろう材は、Ａｇ或いはＡｇ−Ｃｕを含
むことを特徴とする。[0013] The brazing material is characterized by containing Ag or Ag-Cu.
【００１４】上記ろう材は、活性金属としてＴｉ，Ｈ
ｆ，Ｚｒの少なくとも１種を含むことを特徴とする。The above brazing material contains Ti, H as an active metal.
It is characterized by containing at least one of f and Zr.
【００１５】[0015]
【発明の実施の形態】本発明においては、金属とセラミ
ックス接合基板を接合するに当たって、Ａｇ−Ｃｕ系ろ
う材にホウケイ酸鉛ガラス或いはホウケイ酸鉛亜鉛ガラ
スに更に活性金属としてＴｉ，Ｈｆ，Ｚｒの中の少なく
とも１種類が添加されたろう材を用い、このろう材をセ
ラミックス基板の表面に塗布し、これに銅板（好ましく
は無酸素銅）を接触配置し、この基板を真空中で加熱接
合したのち、エッチングにより所定の回路パターンを作
成し、更に半導体素子と銅板との接合に際して半田付け
工程と同様な加熱処理を行う。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, in bonding a metal and a ceramic bonding substrate, lead borosilicate glass or lead zinc borosilicate glass is added to an Ag-Cu-based brazing material, and Ti, Hf, Zr is added as an active metal. Using a brazing material to which at least one of them is added, applying the brazing material to the surface of a ceramic substrate, placing a copper plate (preferably oxygen-free copper) in contact therewith, and heating and joining the substrate in a vacuum, A predetermined circuit pattern is formed by etching, and a heating process similar to the soldering process is performed when the semiconductor element and the copper plate are joined.
【００１６】Ａｇ−Ｃｕ系のろう材としては、実施例に
記載された成分に限定されるものでなく、通常使用され
ているＡｇ−Ｃｕ系のろう材であれば差し支えない。ま
た、ホウケイ酸鉛ガラスは７０ｗｔ％以上の酸化鉛を、
ホウケイ酸鉛亜鉛ガラスは５ｗｔ％以上の酸化亜鉛を含
んでいることが好ましい。さらに、各特性を向上させる
元素や特性を著しく劣化させない不純物を含むことは差
し支えない。The Ag-Cu brazing material is not limited to the components described in the examples, but may be any commonly used Ag-Cu brazing material. In addition, lead borosilicate glass contains 70% by weight or more of lead oxide,
It is preferable that the lead zinc borosilicate glass contains 5 wt% or more of zinc oxide. Further, it may contain an element which improves each property or an impurity which does not significantly deteriorate the property.
【００１７】なお、金属とセラミックス基板の接合方法
及び回路製造方法は必ずしも上記工程に限定されるもの
でなく、金属とセラミックス基板を接合する際にろう材
を用いる方法であれば、どのような方法を用いても差し
支えない。The method of joining a metal and a ceramic substrate and the method of manufacturing a circuit are not necessarily limited to the above steps, and any method using a brazing material when joining a metal and a ceramic substrate can be used. May be used.
【００１８】（実施例１）(Embodiment 1)
【００１９】ＰｂＯ及びＺｎＯが表１に示すように含有
されたガラス粉末Ａ，Ｂ，Ｃ及びＤを準備した。Glass powders A, B, C and D containing PbO and ZnO as shown in Table 1 were prepared.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表２の実施例１で示すようにＡｇ粉末７
０．７ｗｔ％，Ｃｕ粉末２７．３ｗｔ％，そしてガラス
粉末Ａを２．０ｗｔ％を混合し、更にバインダーを溶む
溶剤を添加し、３本ロールで混練してろう材をペースト
状に調整し、このペースト状のろう材を市販の窒化アル
ミニウム基板（岩城硝子製：１３０Ｗ／ｍｋ）の両面に
厚さ３０μｍとなるように塗布した。As shown in Example 1 of Table 2, Ag powder 7
0.7 wt%, 27.3 wt% of Cu powder, and 2.0 wt% of glass powder A are mixed, a solvent for dissolving the binder is added, and the mixture is kneaded with three rolls to adjust the brazing material into a paste. This paste-like brazing material was applied to both surfaces of a commercially available aluminum nitride substrate (130 W / mk, manufactured by Iwaki Glass) so as to have a thickness of 30 μm.
【００２２】[0022]
【表２】 [Table 2]
【００２３】窒化アルミニウム基板の寸法は縦５０ｍ
ｍ，横３０ｍｍ，厚さ０．６３５とした。これに０．３
ｍｍ及び０．１５ｍｍの厚さで窒化アルミニウムと同じ
面積の無酸素銅を接触配置し、これを８５０℃の真空中
で加熱して銅と窒化アルミニウムを接合した。The dimensions of the aluminum nitride substrate are 50 m in length.
m, width 30 mm, and thickness 0.635. 0.3
Oxygen-free copper having the same area as aluminum nitride with a thickness of 0.15 mm and 0.15 mm was placed in contact, and heated in vacuum at 850 ° C. to join copper and aluminum nitride.
【００２４】銅板の一方の表面にエッチングレジストを
所定の回路に合わせて塗布し、銅板をエッチング処理し
て、所定の回路を持つ基板を形成し、更に半田付けと同
じ条件として３７０℃で１０分間加熱処理した。An etching resist is applied to one surface of the copper plate in accordance with a predetermined circuit, and the copper plate is subjected to an etching treatment to form a substrate having a predetermined circuit. Heat treated.
【００２５】得られた金属−セラミックス接合基板の抗
折強度、たわみ量等について加熱処理の前後について測
定した。The bending strength and the amount of deflection of the obtained metal-ceramic bonding substrate were measured before and after the heat treatment.
【００２６】抗折強度は、スパン間距離が３０ｍｍの上
に回路面を下にして基板を置き、スパンの中間部分を上
から荷重を加えるＪＩＳＢの７７７８に準じて三点曲げ
測定方法で行ない基板に割れが生じた時点の荷重から抗
折強度を算出した。The bending strength is measured by a three-point bending measurement method in accordance with JISB7778 in which a substrate is placed with the circuit surface down on a distance between spans of 30 mm and a load is applied from above to the middle part of the span. The transverse rupture strength was calculated from the load at the time when the crack occurred.
【００２７】たわみ量は、同様の三点曲げ測定方法を行
ない、基板に割れが生じた時点の基板の初期の状態から
の荷重負荷部のたわみ量を測定した。For the amount of deflection, the same three-point bending measurement method was used, and the amount of deflection of the load-bearing portion from the initial state of the substrate at the time when the substrate cracked was measured.
【００２８】その結果を表３の実施例１に示す。The results are shown in Example 1 of Table 3.
【００２９】[0029]
【表３】 [Table 3]
【００３０】（実施例２−２３）(Example 2-23)
【００３１】ろう材の含有成分を表２の実施例２〜２３
に示すような成分に調整した以外はすべて実施例１と同
じ方法でＣｕ−ＡＩＮ基板を作製し、実施例１と同様に
抗折強度，たわみ量を測定した。その結果を表３の実施
例２〜２３に示す。The components contained in the brazing filler metals are shown in Examples 2 to 23 in Table 2.
A Cu-AIN substrate was prepared in the same manner as in Example 1 except that the components were adjusted as shown in Table 2, and the bending strength and the amount of deflection were measured in the same manner as in Example 1. The results are shown in Examples 2 to 23 in Table 3.
【００３２】（比較例１−３）(Comparative Example 1-3)
【００３３】表２の比較例１〜３で示したろう材の成分
を用いた以外は、実施例１〜２３と同様な方法で基板を
作製し、同様な測定を行った。その結果を表３の比較例
１〜３に示す。Substrates were prepared in the same manner as in Examples 1 to 23, except that the components of the brazing materials shown in Comparative Examples 1 to 3 in Table 2 were used, and similar measurements were made. The results are shown in Comparative Examples 1 to 3 in Table 3.
【００３４】上記実施例に示した基板はろう材の成分の
差によって初期（加熱処理前）の抗折強度に差が見られ
るが、熱処理後は何れも２３Ｋｇｆ／ｍｍ2 以上を示し
ており、比較例と比べると、抗折強度の低下は少ない。
たわみ量についても熱処理後のたわみ量は比較例に比べ
ると大きい。In the substrates shown in the above examples, the initial (before heat treatment) transverse rupture strength differs depending on the difference in the components of the brazing material, but all show 23 kgf / mm 2 or more after heat treatment. Compared with the comparative example, the reduction in bending strength is small.
Regarding the amount of deflection, the amount of deflection after the heat treatment is larger than that of the comparative example.
【００３５】[0035]
【発明の効果】本発明のように、Ａｇ−Ｃｕ系のろう材
にホウケイ酸鉛ガラスやホウケイ酸鉛亜鉛ガラス或い
は、Ｔｉ，Ｈｆ，Ｚｒを含んだろう材を金属とセラミッ
クスの接合に用いると、従来の活性金属が主体のろう材
による接合に比較して、加熱処理後の抗折強度の低下も
少なく、良好な接合基板を得ることが出来るようになる
大きな利益がある。As in the present invention, when a lead borosilicate glass, a lead zinc borosilicate glass, or a brazing material containing Ti, Hf, Zr is used for the joining of metal and ceramics, as in the present invention. Compared with the conventional joining using a brazing material mainly composed of an active metal, there is little decrease in bending strength after the heat treatment, and there is a great advantage that a good joined substrate can be obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 正美 東京都千代田区丸の内一丁目８番２号 同 和鉱業株式会社内 (72)発明者 中村 潤二 東京都千代田区丸の内一丁目８番２号 同 和鉱業株式会社内 (72)発明者 北村 征寛 東京都千代田区丸の内一丁目８番２号 同 和鉱業株式会社内 (72)発明者 小花 芳樹 千葉県千葉市花見川区宮野木台三丁目17番 ４号 Ｆターム(参考） 4G026 BA01 BA16 BB21 BB22 BF02 BG02 BH07 4G062 AA08 BB05 DE03 HH04 MM27 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Masami Kimura 1-8-2 Marunouchi, Chiyoda-ku, Tokyo Dowa Mining Co., Ltd. (72) Junji Nakamura 1-8-2 Marunouchi, Chiyoda-ku, Tokyo Same as above Inside the Mining Co., Ltd. (72) Inventor Masahiro Kitamura 1-8-2, Marunouchi, Chiyoda-ku, Tokyo Within the Mining Co., Ltd. (72) Yoshiki Obana 3--17-4 Miyanodai, Hanamigawa-ku, Chiba-shi F term (reference) 4G026 BA01 BA16 BB21 BB22 BF02 BG02 BH07 4G062 AA08 BB05 DE03 HH04 MM27
Claims (8)
スを含むろう材により接合されていることを特徴とする
金属−セラミックス接合基板。1. A metal-ceramic bonding substrate, wherein a metal and a ceramic are bonded by a brazing material containing lead borosilicate glass.
ウムであることを特徴とする請求項１記載の金属−セラ
ミックス接合基板。2. The metal-ceramic bonding substrate according to claim 1, wherein the metal is copper and the ceramic is aluminum nitride.
して７０ｗｔ％以上の酸化鉛を含んでいることを特徴と
する請求項２記載の金属−セラミックス接合基板。3. The metal-ceramic bonding substrate according to claim 2, wherein said lead borosilicate glass contains 70% by weight or more of lead oxide as a component thereof.
ガラスを含むろう材により接合されていることを特徴と
する金属−セラミックス接合基板。4. A metal-ceramic bonding substrate, wherein a metal and a ceramic are bonded by a brazing material containing lead zinc borosilicate glass.
ウムであることを特徴とする請求項４記載の金属−セラ
ミックス接合基板。5. The metal-ceramic bonding substrate according to claim 4, wherein the metal is copper and the ceramic is aluminum nitride.
分として５ｗｔ％以上の酸化亜鉛を含んでいることを特
徴とする請求項５記載の金属−セラミックス接合基板。6. The metal-ceramic bonding substrate according to claim 5, wherein the lead zinc borosilicate glass contains 5 wt% or more of zinc oxide as a component thereof.
むことを特徴とする請求項１、２、３、４、５または６
記載の金属−セラミックス接合基板。7. The brazing material according to claim 1, wherein the brazing material contains Ag or Ag—Cu.
The metal-ceramic bonding substrate as described in the above.
ｆ，Ｚｒの少なくとも１種を含むことを特徴とする請求
項１、２、３、４、５、６または７記載の金属−セラミ
ックス接合基板。8. The method according to claim 1, wherein the brazing material comprises Ti, H as an active metal.
The metal-ceramic bonding substrate according to claim 1, 2, 3, 4, 5, 6, or 7, comprising at least one of f and Zr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37580998A JP3914648B2 (en) | 1998-12-18 | 1998-12-18 | Metal-ceramic bonding substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37580998A JP3914648B2 (en) | 1998-12-18 | 1998-12-18 | Metal-ceramic bonding substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000178081A true JP2000178081A (en) | 2000-06-27 |
| JP3914648B2 JP3914648B2 (en) | 2007-05-16 |
Family
ID=18506100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37580998A Expired - Lifetime JP3914648B2 (en) | 1998-12-18 | 1998-12-18 | Metal-ceramic bonding substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3914648B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010241627A (en) * | 2009-04-03 | 2010-10-28 | Dowa Metaltech Kk | Metal-ceramic bonding substrate and brazing filler material used for the same |
| US20110200288A1 (en) * | 2010-02-12 | 2011-08-18 | Eigenlight Corporation | Hermetic package with leaded feedthroughs for in-line fiber optic devices and method of making |
| CN102430829A (en) * | 2011-10-21 | 2012-05-02 | 哈尔滨工业大学 | Brazing method for ZrB2-based material |
| JP2018087122A (en) * | 2016-11-24 | 2018-06-07 | 直文 蕨 | Composite of metal, ceramic and glass and article of the same |
-
1998
- 1998-12-18 JP JP37580998A patent/JP3914648B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010241627A (en) * | 2009-04-03 | 2010-10-28 | Dowa Metaltech Kk | Metal-ceramic bonding substrate and brazing filler material used for the same |
| US20110200288A1 (en) * | 2010-02-12 | 2011-08-18 | Eigenlight Corporation | Hermetic package with leaded feedthroughs for in-line fiber optic devices and method of making |
| CN102430829A (en) * | 2011-10-21 | 2012-05-02 | 哈尔滨工业大学 | Brazing method for ZrB2-based material |
| JP2018087122A (en) * | 2016-11-24 | 2018-06-07 | 直文 蕨 | Composite of metal, ceramic and glass and article of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3914648B2 (en) | 2007-05-16 |
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