JPH056943A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPH056943A
JPH056943A JP15648991A JP15648991A JPH056943A JP H056943 A JPH056943 A JP H056943A JP 15648991 A JP15648991 A JP 15648991A JP 15648991 A JP15648991 A JP 15648991A JP H056943 A JPH056943 A JP H056943A
Authority
JP
Japan
Prior art keywords
semiconductor element
resin
lead frame
semiconductor device
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15648991A
Other languages
Japanese (ja)
Inventor
Masanobu Takasuka
正信 高須賀
Masaki Taniguchi
正記 谷口
Masayuki Yamaguchi
正之 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15648991A priority Critical patent/JPH056943A/en
Publication of JPH056943A publication Critical patent/JPH056943A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide an optical semiconductor device having a number of leads without problems in resin molding property such as bubbles and resin uneveness. CONSTITUTION:Resin is molded in a recess shape on a lead frame 7 so that an outer wall 8, which is higher than the thickness of a semiconductor element 6, is formed at the periphery of an element mounting part 6. An upper plate 10 having the hole whose area is larger than the photoelectric converting part of the semiconductor element 6 is additionally provided at the recess part of the outer wall 9. An outer package 9 is formed by using a material having high adhesion with the lead frame 7 such as phenol-based resin. Therefore, the optical semiconductor device having a number of leads can be provided. Since the upper plate 10 has the hole whose area is larger than the photoelectric conversion part of the semiconductor element 6, the upper part of the photoelectric conversion part of the semiconductor element 6 has the structure without the resin. Therefore, problems of the detects of the resin mold such as bubbles and resin uneveness do not occur.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はリードフレームに樹脂で
一体成型した外囲器を有する光半導体装置に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device having a lead frame and an envelope integrally molded with resin.

【0002】[0002]

【従来の技術】高信頼性を要求される産業機器において
は、リードフレームに樹脂で一体成型した外囲器を有す
る光半導体装置が用いられる。
2. Description of the Related Art In industrial equipment requiring high reliability, an optical semiconductor device having an envelope integrally molded with a lead frame by a resin is used.

【0003】図5および図6は従来の光半導体装置の平
面図および側面断面図である。図5、図6において、従
来の光半導体装置は半導体素子1をリ−ドフレ−ム2の
素子搭載部3に設置し、樹脂4で全面成型される構成を
とっていた。この構成では光電変換部を有する半導体素
子1上の成型、及びリ−ドフレ−ム上下の成型が同一の
樹脂4によりなされるため、樹脂4として光透過性の樹
脂が用いられていた。
5 and 6 are a plan view and a side sectional view of a conventional optical semiconductor device. In FIGS. 5 and 6, the conventional optical semiconductor device has a structure in which the semiconductor element 1 is installed in the element mounting portion 3 of the lead frame 2 and is entirely molded with the resin 4. In this configuration, since the molding on the semiconductor element 1 having the photoelectric conversion portion and the molding on the upper and lower sides of the lead frame are performed by the same resin 4, a light transmissive resin is used as the resin 4.

【0004】[0004]

【発明が解決しようとする課題】従来の光半導体装置の
構成では、リード本数の多い大型のリードフレーム2の
全面樹脂封止になると 樹脂4の良好な成型性が困難で
気泡、樹脂むらなどが多発する問題があった。また、リ
−ドフレ−ム2と樹脂4の密着性が不十分なためリ−ド
ピッチが制約されたり、密着性改善のため半導体素子1
の周辺に別の樹脂形成が必要となり実装性やコストの面
で問題があった。
In the configuration of the conventional optical semiconductor device, when the entire lead frame 2 having a large number of leads is resin-sealed, good moldability of the resin 4 is difficult and bubbles, resin unevenness, and the like occur. There was a frequent problem. Further, since the adhesion between the lead frame 2 and the resin 4 is insufficient, the lead pitch is restricted, or the semiconductor element 1 is improved for improving the adhesion.
There was a problem in terms of mountability and cost because another resin needs to be formed around the area.

【0005】本発明は樹脂成型性、リ−ドフレ−ムと樹
脂の密着性が良好な光半導体装置を提供することを目的
とする。
An object of the present invention is to provide an optical semiconductor device having good resin moldability and good adhesion between the lead frame and the resin.

【0006】[0006]

【課題を解決するための手段】上記の問題点を解決する
ために、本発明の光半導体装置は、半導体素子を搭載し
たリードフレームの下部全面と、前記リードフレーム上
面に前記半導体素子の搭載部および周辺部が空洞となる
外壁とを樹脂成型し、前記半導体素子上方に前記半導体
素子の光電変換部より大きな穴を有する上板を前記外壁
上に付設したことを特徴とするものである。
In order to solve the above-mentioned problems, an optical semiconductor device of the present invention has an entire lower surface of a lead frame on which a semiconductor element is mounted and a mounting portion of the semiconductor element on the upper surface of the lead frame. And an outer wall having a hollow peripheral portion formed by resin molding, and an upper plate having a hole larger than the photoelectric conversion portion of the semiconductor element is provided above the semiconductor element on the outer wall.

【0007】[0007]

【作用】本発明によると、リードフレームに搭載した半
導体素子の光電変換部上方が空洞であり、樹脂むらやリ
ードピッチの問題がなく、特にリード本数の多い多ピン
タイプの外囲器に有効であり、樹脂成型性、密着性が良
好で外観不良を大幅に低減させることが可能となった。
According to the present invention, since the semiconductor device mounted on the lead frame has a cavity above the photoelectric conversion portion, there is no problem of resin unevenness and lead pitch, and it is particularly effective for a multi-pin type envelope having a large number of leads. Therefore, the resin moldability and adhesion were good, and it became possible to significantly reduce the appearance defects.

【0008】[0008]

【実施例】以下、本発明のー実施例について図面を参照
しながら説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0009】図1および図2は本発明の第1の実施例に
おける光半導体装置の平面図および側面断面図である。
1 and 2 are a plan view and a side sectional view of an optical semiconductor device according to a first embodiment of the present invention.

【0010】図1、図2において、本発明の光半導体装
置は、素子搭載部5に半導体素子6がマウントされたリ
−ドフレーム7の下部全面と、リ−ドフレーム7の上方
に素子載置部5およびその周辺を空洞とする半導体素子
6の厚みより高い外壁8とからなる凹型の外囲器9をフ
ェノール系樹脂で樹脂成型し、半導体素子6の上方位置
に、半導体素子6の光電変換部より大きな面積の穴を有
する上板10を外壁8に付設した中空方式の構成であ
る。かかる方式では光電変換部の上部は樹脂のない空間
になっており、樹脂むら及び気泡などの外観不良の問題
は発生しない構造となっている。
1 and 2, an optical semiconductor device according to the present invention has an element mounting portion 5 on which a semiconductor element 6 is mounted, the entire lower surface of a lead frame 7, and an element mounted above the lead frame 7. A recessed envelope 9 composed of the mounting portion 5 and an outer wall 8 having a cavity surrounding the semiconductor element 6 and having a thickness higher than that of the semiconductor element 6 is resin-molded with a phenol-based resin. This is a hollow structure in which an upper plate 10 having a hole having a larger area than the conversion portion is attached to the outer wall 8. In such a system, the space above the photoelectric conversion section is a space without resin, and the structure does not cause the problem of defective appearance such as resin unevenness and bubbles.

【0011】図3は本発明の第2の実施例における光半
導体装置の側面断面図を示す。第1の実施例と異なる点
は、上板11が半導体素子6の上方に、半導体素子6の
光電変換部より大きな面積で光透過性の陥没部12を設
け、かつ陥没部12を鏡面研磨し光透過性を上げた構成
であるということである。かかる構成では光電変換部の
上部は成型性の良好な上板11となっており、樹脂むら
及び気泡などの外観不良の問題は発生しない構造となっ
ている。
FIG. 3 is a side sectional view of an optical semiconductor device according to the second embodiment of the present invention. The difference from the first embodiment is that the upper plate 11 is provided above the semiconductor element 6 with a light-transmissive depression 12 having a larger area than the photoelectric conversion portion of the semiconductor element 6, and the depression 12 is mirror-polished. This means that the structure has improved light transmittance. In such a configuration, the upper portion of the photoelectric conversion portion is the upper plate 11 having a good moldability, and the structure does not cause the problem of poor appearance such as resin unevenness and bubbles.

【0012】図4は本発明の第3の実施例における光半
導体装置の側面断面図を示す。第1および第2の実施例
と異なる点は、外壁8に上板を付設せず、外壁8に囲ま
れた中空部の少なくとも半導体素子6の光電変換部とリ
ードフレーム7に電気接続する半導体素子6のパッド部
を保護樹脂13で被覆する構成となっている。かかる構
成では、保護樹脂13として気泡や樹脂むらの少ない低
温での樹脂成型方法を採用できるため、半導体素子6の
光電変換部の上部は成型性の良好な構造となる。
FIG. 4 is a side sectional view of an optical semiconductor device according to the third embodiment of the present invention. The difference from the first and second embodiments is that a semiconductor element is not provided with an upper plate on the outer wall 8 and is electrically connected to at least the photoelectric conversion portion of the semiconductor element 6 in the hollow portion surrounded by the outer wall 8 and the lead frame 7. The pad portion 6 is covered with the protective resin 13. In such a configuration, since the resin molding method can be adopted as the protective resin 13 at a low temperature with less bubbles and resin unevenness, the upper portion of the photoelectric conversion portion of the semiconductor element 6 has a structure with good moldability.

【0013】なお、第3の実施例において、外壁8に半
導体素子6の光電変換部より大きな面積の穴を有する上
板10、あるいは光電変換部より大きな面積で鏡面研磨
した光透過性の陥没部を有する上板11を付設しても同
等の効果が得られる。
In the third embodiment, the upper plate 10 having a hole having a larger area than the photoelectric conversion portion of the semiconductor element 6 in the outer wall 8 or a light-transmissive recessed portion mirror-polished with a larger area than the photoelectric conversion portion. Even if the upper plate 11 having the is attached, the same effect can be obtained.

【0014】[0014]

【発明の効果】本発明による光半導体装置は、特にリー
ド本数の多い多ピンタイプの外囲器や大形の外囲器に有
効であり、樹脂成型性、密着性に関する外観不良を大幅
に低減させたものである。半導体素子の光電変換部より
大きな面積の穴を有する上板、もしくは光電変換部より
大きな面積で鏡面研磨した陥没部を有する上板をリード
フレームに樹脂で一体成型した外囲器の外壁に付設する
構成により、樹脂むら及び気泡などの外観不良の問題は
発生しない新しい光半導体装置を提供することができ
る。また、保護樹脂を半導体素子に覆うことで、より信
頼性の高い光半導体装置を提供することができる。
INDUSTRIAL APPLICABILITY The optical semiconductor device according to the present invention is particularly effective for a multi-pin type envelope having a large number of leads and a large-sized envelope, and greatly reduces appearance defects related to resin moldability and adhesion. It was made. Attach an upper plate with a hole with a larger area than the photoelectric conversion part of the semiconductor element, or an upper plate with a recessed part that is mirror-polished with a larger area than the photoelectric conversion part to the outer wall of the envelope integrally molded with resin on the lead frame According to the configuration, it is possible to provide a new optical semiconductor device which does not cause a problem of defective appearance such as resin unevenness and bubbles. Moreover, by covering the semiconductor element with the protective resin, a more reliable optical semiconductor device can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の光半導体装置を示す平
面図
FIG. 1 is a plan view showing an optical semiconductor device according to a first embodiment of the present invention.

【図2】本発明の第1の実施例の光半導体装置を示す側
面断面図
FIG. 2 is a side sectional view showing an optical semiconductor device according to a first embodiment of the present invention.

【図3】本発明の第2の実施例の光半導体装置を示す側
面断面図
FIG. 3 is a side sectional view showing an optical semiconductor device according to a second embodiment of the present invention.

【図4】本発明の第3の実施例の光半導体装置を示す側
面断面図
FIG. 4 is a side sectional view showing an optical semiconductor device according to a third embodiment of the present invention.

【図5】従来の光半導体装置を示す平面図FIG. 5 is a plan view showing a conventional optical semiconductor device.

【図6】従来の光半導体装置を示す側面断面図FIG. 6 is a side sectional view showing a conventional optical semiconductor device.

【符号の説明】[Explanation of symbols]

6 半導体素子 7 リ−ドフレ−ム 8 外壁 9 外囲器 10、11 上板 13 保護樹脂 6 Semiconductor element 7 lead frame 8 outer wall 9 envelope 10, 11 Upper plate 13 Protective resin

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成4年1月27日[Submission date] January 27, 1992

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】図面[Document name to be corrected] Drawing

【補正対象項目名】図5[Name of item to be corrected] Figure 5

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【図5】 [Figure 5]

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】半導体素子を搭載したリードフレームの下
部全面と、前記リードフレーム上面に前記半導体素子の
搭載部および周辺部が空洞となる外壁とを樹脂成型し、
前記半導体素子上方位置に前記半導体素子の光電変換部
より大きな穴を有する上板を前記外壁上に付設したこと
を特徴とする光半導体装置。
1. A resin molding of an entire lower surface of a lead frame on which a semiconductor element is mounted, and an outer wall on the upper surface of the lead frame in which a mounting portion and a peripheral portion of the semiconductor element are hollow,
An optical semiconductor device, wherein an upper plate having a hole larger than a photoelectric conversion portion of the semiconductor element is provided above the semiconductor element on the outer wall.
【請求項2】半導体素子を搭載したリードフレームの下
部全面と、前記リードフレーム上面の前記半導体素子の
搭載部および周辺部が空洞となる外壁とを樹脂成型し、
前記半導体素子上方位置に前記半導体素子の光電変換部
より大きな陥没部を設け、かつ前記陥没部を鏡面研磨し
た上板を前記外壁上に付設したことを特徴とする光半導
体装置。
2. A resin molding of an entire lower surface of a lead frame on which a semiconductor element is mounted and an outer wall of the upper surface of the lead frame in which a mounting portion of the semiconductor element and a peripheral portion thereof are hollow,
An optical semiconductor device, wherein a recessed portion larger than the photoelectric conversion portion of the semiconductor element is provided at a position above the semiconductor element, and an upper plate obtained by mirror-polishing the recessed portion is attached to the outer wall.
【請求項3】半導体素子を搭載したリードフレームの下
部全面と、前記リードフレーム上面の前記半導体素子の
搭載部および周辺部が空洞となる外壁とを樹脂成型し、
少なくとも前記空洞内の前記半導体素子の光電変換部と
前記リードフレームに電気接続する前記半導体素子のパ
ッド部とを光透過性樹脂で保護したことを特徴とする光
半導体装置。
3. A resin molding of the entire lower surface of a lead frame on which a semiconductor element is mounted and an outer wall on the upper surface of the lead frame where the semiconductor element mounting portion and the peripheral portion are hollow.
At least a photoelectric conversion portion of the semiconductor element in the cavity and a pad portion of the semiconductor element electrically connected to the lead frame are protected by a light transmissive resin.
JP15648991A 1991-06-27 1991-06-27 Optical semiconductor device Pending JPH056943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15648991A JPH056943A (en) 1991-06-27 1991-06-27 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15648991A JPH056943A (en) 1991-06-27 1991-06-27 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPH056943A true JPH056943A (en) 1993-01-14

Family

ID=15628877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15648991A Pending JPH056943A (en) 1991-06-27 1991-06-27 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPH056943A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384472B1 (en) * 2000-03-24 2002-05-07 Siliconware Precision Industries Co., Ltd Leadless image sensor package structure and method for making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384472B1 (en) * 2000-03-24 2002-05-07 Siliconware Precision Industries Co., Ltd Leadless image sensor package structure and method for making the same

Similar Documents

Publication Publication Date Title
US6861683B2 (en) Optoelectronic component using two encapsulating materials and the method of making the same
US6358773B1 (en) Method of making substrate for use in forming image sensor package
US6509636B1 (en) Semiconductor package
JPH05144982A (en) Integrated circuit device
JP6223544B2 (en) Optoelectronic device, support assembly, and method for manufacturing a plurality of optoelectronic devices
JPH056943A (en) Optical semiconductor device
US20050082490A1 (en) Optical semiconductor housing with transparent chip and method for making same
US20020079438A1 (en) Image sensor package and substrate thereof
JPH06216412A (en) Manufacture of led
JP2568752B2 (en) Semiconductor device
US6276913B1 (en) Mold for resin sealing
US20240055453A1 (en) Sensor package structure
JPH04215461A (en) Package for semiconductor device
JP2004193294A (en) Hollow resin package for semiconductor
JPH02144946A (en) Semiconductor device
KR950006131Y1 (en) Semiconductor package lead frame
JPH04162783A (en) Light emitting element
JP3225774B2 (en) Resin sealing method for CCD module
JPH01194446A (en) Ceramic substrate for resin-sealing semiconductor chip
JPH021957A (en) Package for semiconductor integrated circuit
JPH0745663A (en) Semiconductor device with heat sink and its manufacture
JP2952728B2 (en) Exposed structure of heat dissipation slag on electronic component mounting board
JPH08236737A (en) Resin sealing method of ccd module
JPH05190763A (en) Sealed component
JPH01225345A (en) Ic device