JPH0568873B2 - - Google Patents
Info
- Publication number
- JPH0568873B2 JPH0568873B2 JP20150284A JP20150284A JPH0568873B2 JP H0568873 B2 JPH0568873 B2 JP H0568873B2 JP 20150284 A JP20150284 A JP 20150284A JP 20150284 A JP20150284 A JP 20150284A JP H0568873 B2 JPH0568873 B2 JP H0568873B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- refractive index
- laser
- striped
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 113
- 239000011247 coating layer Substances 0.000 claims description 27
- 238000005253 cladding Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 description 17
- 230000000903 blocking effect Effects 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59201502A JPS6180881A (ja) | 1984-09-28 | 1984-09-28 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59201502A JPS6180881A (ja) | 1984-09-28 | 1984-09-28 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6180881A JPS6180881A (ja) | 1986-04-24 |
| JPH0568873B2 true JPH0568873B2 (fr) | 1993-09-29 |
Family
ID=16442114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59201502A Granted JPS6180881A (ja) | 1984-09-28 | 1984-09-28 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6180881A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2743540B2 (ja) * | 1989-12-26 | 1998-04-22 | 松下電器産業株式会社 | 半導体レーザおよびその製造方法 |
| US5114877A (en) * | 1991-01-08 | 1992-05-19 | Xerox Corporation | Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth |
| US5138625A (en) * | 1991-01-08 | 1992-08-11 | Xerox Corporation | Quantum wire semiconductor laser |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM256012U (en) * | 2004-03-04 | 2005-01-21 | Carry Computer Eng Co Ltd | USB connector with card detector |
| JP2009059052A (ja) * | 2007-08-30 | 2009-03-19 | Seiko Instruments Inc | 携帯用電子機器 |
| US7771202B2 (en) * | 2008-01-07 | 2010-08-10 | Einam Yitzhak Amotz | Apparatus for transferring alternating current electrical power |
| JP2011113727A (ja) * | 2009-11-25 | 2011-06-09 | Sharp Corp | 直流給電装置、直流給電方法、直流給電コンセント、直流給電プラグ及び直流給電プラグと直流給電コンセントの組み合わせ |
| KR101204510B1 (ko) * | 2012-07-09 | 2012-11-26 | (주)에스피에스 | 모바일 단말기의 충전 장치 |
-
1984
- 1984-09-28 JP JP59201502A patent/JPS6180881A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6180881A (ja) | 1986-04-24 |
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