JPH0567807A - Led element - Google Patents
Led elementInfo
- Publication number
- JPH0567807A JPH0567807A JP23033391A JP23033391A JPH0567807A JP H0567807 A JPH0567807 A JP H0567807A JP 23033391 A JP23033391 A JP 23033391A JP 23033391 A JP23033391 A JP 23033391A JP H0567807 A JPH0567807 A JP H0567807A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- light emitting
- pattern
- defective
- diffusion part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、ＬＥＤプリンタなど
の光源として使用されるＬＥＤアレイの構造に関するも
のである。特に発光部形成時生じる異常拡散部を検出で
きる構造を提供するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of an LED array used as a light source for an LED printer or the like. In particular, it is intended to provide a structure capable of detecting an abnormal diffusion portion generated when the light emitting portion is formed.
【０００２】[0002]
【従来の技術】図２に従来技術の面発光ダイオードアレ
イの平面図とＡ−Ａ断面図を示す。図中１はＬＥＤの基
板となるＮ−ＧａＡｓＰ／ＧａＡｓ基板である。その上
に拡散絶縁膜２を施し、選択拡散法でＰ+ 拡散部（発光
部）３ａを設け、それと電気的に接続されているＰ電極
５を形成する。これらのパターン形成は、膜付工程とフ
ォトリソグラフィ（以下フォトリソと略す）工程から成
るが、膜付工程におけるフレーク等の原因による膜欠陥
や、フォトリソ工程における塵埃等の原因によるパター
ン欠陥がしばしば発生する。選択拡散の際、拡散絶縁膜
２にこの様な膜欠陥、パターン欠陥があると、その部分
にもＰ+拡散され異常拡散部４が形成され、発光部形状
不良が発生する。2. Description of the Related Art FIG. 2 shows a plan view and a sectional view taken along line AA of a conventional surface emitting diode array. In the figure, 1 is an N-GaAsP / GaAs substrate which is a substrate of the LED. A diffusion insulating film 2 is applied thereon, a P + diffusion portion (light emitting portion) 3a is provided by a selective diffusion method, and a P electrode 5 electrically connected thereto is formed. These pattern formations consist of a film deposition process and a photolithography (hereinafter abbreviated as photolithography) process, but film defects due to flakes in the film deposition process and pattern defects due to dust in the photolithography process often occur. . When such a film defect or pattern defect is present in the diffusion insulating film 2 during selective diffusion, P + diffusion is also performed in that part to form the abnormal diffusion portion 4, and a defective light emitting portion shape is generated.
【０００３】[0003]
【発明が解決しようとする課題】前述した発光部形状不
良は、ＬＥＤプリンタなどの印字品質に悪影響を及ぼし
非常に問題となる。従って、何らかの選別を実施してこ
の様な発光形状不良発生チップは不良としなければなら
ない。通常、光電特性の選別（プロービング）を実施し
除去するが、この発光形状不良は特性不良にはならない
場合が多い。つまり発光形状こそ異常であるがＰ+ 拡散
部としての機能は正常であるため特性不良にならない。
また発光出力は、他の正常部に比べてやや高くなるもの
もあるが、かなり大規模な形状不良にならないと不良と
して除去できない。このため従来、パターン及び発光形
状の外観選別を実施することで、これらの発光形状不良
を除去しているが、この作業には多大なる工数が必要な
ことと官能検査であるため不確実であるという問題があ
る。The above-mentioned defect in the shape of the light emitting portion adversely affects the printing quality of an LED printer or the like and becomes a serious problem. Therefore, it is necessary to carry out some sort of sorting to make such a chip having a defective light emitting shape defective. Usually, the photoelectric characteristics are selected (probing) and removed, but in many cases, this defective emission shape does not result in defective characteristics. In other words, the emission shape is abnormal, but the function as the P + diffusion portion is normal, and therefore the characteristic does not become defective.
Although the light emission output may be slightly higher than that of other normal parts, it cannot be removed as a defect unless a considerably large-scale shape defect occurs. For this reason, conventionally, the appearance defect of the pattern and the light emission shape has been removed to remove these light emission shape defects, but it is uncertain because a large number of man-hours are required for this work and it is a sensory test. There is a problem.
【０００４】本発明は以上述べた発光形状不良の除去
を、欠陥検出パターンを設けることにより、特性選別で
確実に不良とすることができるＬＥＤアレイの構造を提
供することを目的とする。It is an object of the present invention to provide a structure of an LED array capable of removing defects of the above-mentioned light emission shape by providing a defect detection pattern, by which characteristics can be surely determined to be defective.
【０００５】[0005]
【課題を解決するための手段】本発明は前述の目的のた
めに、発光部を取り囲むように、欠陥検出パターンとし
てＰ+ 拡散部を設け、発光形状不良部が検出パターンに
接触した場合、特性不良になるようにしたものである。For the above-mentioned purpose, the present invention provides a P + diffusion part as a defect detection pattern so as to surround the light emitting part, and when the light emission shape defective part comes into contact with the detection pattern, the characteristics are improved. It was designed to be defective.
【０００６】[0006]
【作用】本発明は前述のように、異常拡散検出パターン
を設けたので、膜欠陥やパターン欠陥による発光形状不
良を特性選別で不良品として除去することが可能とな
る。As described above, according to the present invention, since the abnormal diffusion detection pattern is provided, it is possible to remove defective light emitting shapes due to film defects and pattern defects as defective products by characteristic selection.
【０００７】[0007]
【実施例】図１は本発明の実施例を示す面発光ＬＥＤア
レイの平面図とそのＡ−Ａ断面図である。図中１はＬＥ
Ｄアレイの基板となるＮ−ＧａＡｓＰ／ＧａＡｓ基板で
ある。その上に拡散絶縁膜２を施し、選択拡散法でＰ+
拡散部を発光部３ａとともに、それを取り囲むように欠
陥検出パターン３ｂを同時に形成する。これは単にその
ようなパターンのマスクを作成すればよいだけであるか
ら、従来同様の方法で容易にできる。欠陥検出パターン
３ｂはウエハーのスクライブラインも兼ねており、ウエ
ハー（基板）全面に連続的に配置する。従ってウエハー
端部においては、Ｐ+ 拡散部３ｂとＮ側電極６は短絡状
態になっているので、異常拡散部４がこのＰ+ 拡散部３
ｂと接触した場合、電気的に短絡状態になる様にしてあ
る。従って不良として検出できる。また前記欠陥検出パ
ターン３ｂはＰ+ 拡散に限るものでなく他の導電体でも
勿論よいが、発光部と同じものが製造はし易い。５はＰ
+ 発光部３ａと電気的に接続されたＰ電極である。1 is a plan view of a surface emitting LED array showing an embodiment of the present invention and a sectional view taken along the line AA. 1 in the figure is LE
It is an N-GaAsP / GaAs substrate which is a substrate of the D array. A diffusion insulating film 2 is formed on top of this, and P + is formed by the selective diffusion method.
A defect detection pattern 3b is formed at the same time as the light emitting part 3a and the diffusion part so as to surround the light emitting part 3a. This can be easily done by a method similar to the conventional method because it is only necessary to prepare a mask having such a pattern. The defect detection pattern 3b also serves as a scribe line of the wafer, and is continuously arranged on the entire surface of the wafer (substrate). Thus in the wafer edge portion, the P + diffusion part 3b and the N-side electrode 6 is in a short-circuited state, the abnormal diffusion unit 4 is the P + diffusions 3
When it comes into contact with b, it is electrically short-circuited. Therefore, it can be detected as a defect. Further, the defect detection pattern 3b is not limited to the P + diffusion, but may be another conductor, but the same one as the light emitting portion is easy to manufacture. 5 is P
+ A P electrode electrically connected to the light emitting portion 3a.
【０００８】[0008]
【発明の効果】以上説明したように、本発明は異常拡散
検出パターンを設けることにより、膜欠陥やパターン欠
陥による発光形状不良を、特性選別で不良品として除去
することが可能となる。従って、従来実施していた外観
選別が不要となり、大幅な工数削減と信頼性向上が可能
となる。As described above, according to the present invention, by providing the abnormal diffusion detection pattern, it becomes possible to eliminate defective light emitting shapes due to film defects and pattern defects as defective products by characteristic selection. Therefore, it becomes unnecessary to perform the external appearance selection that has been conventionally performed, and it is possible to significantly reduce the man-hours and improve the reliability.
【図１】本発明の実施例FIG. 1 Example of the present invention
【図２】従来例FIG. 2 Conventional example
１ Ｎ−ＧａＡｓＰ／ＧａＡｓ基板 ２ 拡散絶縁膜 ３ａ Ｐ+ 拡散部（発光部） ３ｂ Ｐ+ 拡散部（欠陥検出パターン） ４ 異常拡散部 ５ Ｐ電極 ６ Ｎ電極DESCRIPTION OF SYMBOLS 1 N-GaAsP / GaAs substrate 2 Diffusion insulating film 3a P + diffusion part (light emitting part) 3b P + diffusion part (defect detection pattern) 4 abnormal diffusion part 5 P electrode 6 N electrode
Claims (2)
に形成された開口部を有する拡散絶縁膜と、前記開口部
底部の前記基板中に形成された第２導電型の発光部と、
前記発光部と接続された配線とを有するＬＥＤ素子にお
いて、前記発光部と前記拡散絶縁膜の境界部に隣接しか
つ前記発光部と前記配線に接することなく、導電体のパ
ターンを設けたことを特徴とするＬＥＤ素子。1. A semiconductor substrate of a first conductivity type, a diffusion insulating film having an opening formed on the substrate, and a light emitting portion of a second conductivity type formed in the substrate at the bottom of the opening. ,
In an LED element having a wiring connected to the light emitting portion, a pattern of a conductor is provided adjacent to a boundary portion between the light emitting portion and the diffusion insulating film and without contacting the light emitting portion and the wiring. Characteristic LED element.
光部と同じ拡散法によって形成したことを特徴とするＬ
ＥＤ素子。2. The L according to claim 1, wherein the conductor pattern according to claim 1 is formed by the same diffusion method as that of the light emitting portion.
ED element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23033391A JPH0567807A (en) | 1991-09-10 | 1991-09-10 | Led element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23033391A JPH0567807A (en) | 1991-09-10 | 1991-09-10 | Led element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0567807A true JPH0567807A (en) | 1993-03-19 |
Family
ID=16906197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23033391A Pending JPH0567807A (en) | 1991-09-10 | 1991-09-10 | Led element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0567807A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523590A (en) * | 1993-10-20 | 1996-06-04 | Oki Electric Industry Co., Ltd. | LED array with insulating films |
-
1991
- 1991-09-10 JP JP23033391A patent/JPH0567807A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523590A (en) * | 1993-10-20 | 1996-06-04 | Oki Electric Industry Co., Ltd. | LED array with insulating films |
| US5733689A (en) * | 1993-10-20 | 1998-03-31 | Oki Electric Industry Co., Ltd. | Led array fabrication process with improved unformity |
| US5869221A (en) * | 1993-10-20 | 1999-02-09 | Oki Electric Industry Co., Ltd. | Method of fabricating an LED array |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20000404 |