JPH0565589B2 - - Google Patents

Info

Publication number
JPH0565589B2
JPH0565589B2 JP10051884A JP10051884A JPH0565589B2 JP H0565589 B2 JPH0565589 B2 JP H0565589B2 JP 10051884 A JP10051884 A JP 10051884A JP 10051884 A JP10051884 A JP 10051884A JP H0565589 B2 JPH0565589 B2 JP H0565589B2
Authority
JP
Japan
Prior art keywords
temperature
heaters
substrate electrode
temperature detection
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10051884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60245778A (ja
Inventor
Tsuneo Ogawa
Yutaka Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10051884A priority Critical patent/JPS60245778A/ja
Publication of JPS60245778A publication Critical patent/JPS60245778A/ja
Publication of JPH0565589B2 publication Critical patent/JPH0565589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
JP10051884A 1984-05-21 1984-05-21 薄膜形成装置 Granted JPS60245778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10051884A JPS60245778A (ja) 1984-05-21 1984-05-21 薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10051884A JPS60245778A (ja) 1984-05-21 1984-05-21 薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS60245778A JPS60245778A (ja) 1985-12-05
JPH0565589B2 true JPH0565589B2 (fr) 1993-09-20

Family

ID=14276170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10051884A Granted JPS60245778A (ja) 1984-05-21 1984-05-21 薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS60245778A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69007733T2 (de) * 1989-05-08 1994-09-29 Philips Nv Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.
DE3943478C2 (de) * 1989-05-08 1995-11-16 Philips Electronics Nv Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumbehandlungsanlage
FR2646861B1 (fr) * 1989-05-09 1991-07-26 Philips Nv Appareil de traitement de substrats plans sous vide partiel
JPH09157846A (ja) * 1995-12-01 1997-06-17 Teisan Kk 温度調節装置
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors

Also Published As

Publication number Publication date
JPS60245778A (ja) 1985-12-05

Similar Documents

Publication Publication Date Title
US6676804B1 (en) Method and apparatus for plasma processing
WO2015034659A1 (fr) Ensemble mandrin électrostatique à régulation de température réglable
US11024522B2 (en) Virtual sensor for spatially resolved wafer temperature control
KR19990087819A (ko) 플라즈마 처리장치
US7537671B2 (en) Self-calibrating optical emission spectroscopy for plasma monitoring
US8282848B2 (en) Plasma processing method and plasma processing apparatus
JP3103227B2 (ja) 半導体装置の製造方法
JP2000216140A (ja) ウエハステ―ジおよびウエハ処理装置
KR20200131168A (ko) 플라즈마 처리 장치, 온도 제어 방법, 및 온도 제어 프로그램
JPH0565589B2 (fr)
JP3204866B2 (ja) 真空処理装置及び真空処理方法
KR102137886B1 (ko) h-BN 성장용 LPCVD 시스템
KR20200131172A (ko) 플라즈마 처리 장치, 산출 방법 및 산출 프로그램
US6527927B1 (en) Vacuum treatment system
JPH0529264A (ja) 半導体ウエハ処理装置
KR200145300Y1 (ko) 종말점 검출이 용이한 플라스마식각장비
JPH11111692A (ja) プラズマエッチング装置
US20160273097A1 (en) Method for monitoring se vapor in vacuum reactor apparatus
JPH04297054A (ja) 半導体ウエハーの処理方法および装置
JPH0527484Y2 (fr)
JPS602667A (ja) 固体原料の昇華供給装置
JPH0758080A (ja) プラズマ処理方法およびプラズマ処理装置ならびにその温度制御方法
JPH06336677A (ja) プラズマｃｖｄ装置
JPH05160027A (ja) 成膜装置
JPH0533131A (ja) スパツタリング装置