JPH0565589B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a substrate electrode structure for a film forming apparatus, and particularly to a substrate electrode structure for a film forming apparatus that forms a thin film on the surface of a substrate in vacuum.

[Background of the invention]

One method of forming a thin film on a substrate is to use chemical vapor deposition to grow the thin film on the substrate in a vacuum using a vapor phase.
A source gas control section and a reaction chamber are provided in the vacuum chamber, and a means for heating the substrate is employed in the reaction chamber.

Conventionally, as a substrate electrode structure of such a film forming apparatus, the one shown in FIG. 1 is known.
1 is a substrate electrode, which is sealed from the atmosphere by a flange 9 and fixed to the vacuum container wall 4;
It is placed inside a vacuum container. A plurality of heaters 2 are embedded inside the substrate electrode 1 . This heater 2 is connected to a power source 5 in the atmosphere outside the vacuum container wall 4 via a vacuum flange 3 . On the substrate electrode 1 is a substrate (not shown) on which a thin film is to be formed.
is arranged, and this substrate is heated by a heater 2. Furthermore, a temperature detection element 6 for detecting the temperature state of the substrate is embedded inside the substrate electrode 1. This temperature detection element 6 is connected to a temperature measuring device 8 through the vacuum flange 3 by electric wires 7a and 7b.

In such a substrate electrode structure, when a voltage is applied to the heater 2 by the power source 5, the heater 2 generates heat and the substrate electrode 1 is heated. Then, the substrate placed on the substrate electrode 1 is also heated. The temperature of the substrate electrode 1 is detected by a temperature detection element 6, and when the temperature measurement device 8 senses a desired reference temperature T, the voltage supply to the heater 2 is cut off.

However, in the conventional substrate electrode structure, the temperature at only one point on the substrate electrode 1 is monitored, and the heat release rate from the heater 2 inside the substrate electrode 1 is not uniform and varies depending on the location. It was not possible to guarantee that the reference temperature T was maintained over the entire surface of the electrode 1. For this reason, there was a drawback that uniform heating of the substrate could not be expected.

[Purpose of the invention]

An object of the present invention is to provide a thin film forming apparatus that can uniformly heat a substrate and control the temperature with high precision in order to form a high quality and uniform thin film over the entire surface of the substrate. be.

[Summary of the invention]

In order to achieve the above object, in the present invention,
A plurality of heaters and a temperature sensing body that pairs with a group of heaters are embedded in a distributed manner inside the substrate electrode, and cooling grooves that almost pair with each heater are provided inside the substrate electrode to determine the temperature of each heater and each cooling. A thin film forming apparatus is provided in which the flow rate of a cooling medium flowing through grooves is individually controlled.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIGS. 2 and 3.

A substrate electrode 12 and a high-frequency electrode 26 are housed in the vacuum chamber 11. The substrate electrode 12 is sealed and fixed to the vacuum chamber 11 by a flange 20, and the high-frequency electrode 26 with an electrode plate 30 is attached to a flange 29. Therefore, it is sealed and fixed to the vacuum chamber 11. A high frequency power source 3 is connected to the high frequency electrode 29 and the substrate electrode 12.
A high frequency voltage is applied from 3. Vacuum chamber 11
The interior is evacuated via exhaust ports 32a and 32b by an exhaust system (not shown), creating a high vacuum state.

Inside the substrate electrode 12, outer heaters 13a, 13 are provided.
b, 13c and inner heaters 14a, 14b are embedded as shown in FIG. 1
5b is buried. Further, the substrate electrode 12 has
A cooling gas introduction groove 16 is provided facing the outer heaters 13a, 13b, 13c and the inner heaters 14a, 14b.
a, 16b, 17a, and 17b are provided.
The cooling gas introduction grooves 16a and 16b communicate with each other (not shown), and have a structure in which the cooling gas is introduced through a gas introduction pipe 18a and exhausted through a gas discharge pipe 18b. Similarly, the cooling gas introduction grooves 17a and 17b communicate with each other (not shown), and the cooling gas is introduced through a gas introduction pipe 19a and discharged through a gas discharge pipe 19b. Gas introduction pipe 18
a, 19a and gas outlet pipes 18b, 19b,
As shown in FIG. 2, the gas introduction pipes 18a and 19a are led out to the atmosphere through the vacuum flange 21.
The gas flow rate to flow into each is determined by a gas flow rate regulator 25.
a, 25b.
Further, each of the outer heaters 13a, 13b, and 13c is heated by electric power from the outer heater power source 22a, and each inner heater 14a, 14b is heated by electric power from the inner heater power source 22b. or,
The outputs of each temperature detection element 15a, 15b are input to temperature detectors 23a, 23b shown in FIG. 2, respectively. Power lines connecting each outer heater 13a, 13b, 13c and power supply 22a and inner heater 14a,
14b and the power line connecting the power supply 22b, each temperature detection element 15a, 15b and the temperature detector 23a, 23b
As shown in FIGS. 2 and 3, the signal lines connecting the two are led out to the atmosphere through a vacuum flange 21. The output signals of the temperature detectors 23a, 23b are input to the temperature controller 24, and the temperature controller 24 connects the power supplies 22a, 22b and the gas flow regulator 25.
A control signal is output to a and 25b.

On the other hand, a reaction gas is introduced into the high-frequency electrode 26 from a reaction gas cylinder 28 through a reaction gas introduction pipe 27 and is ejected from a large number of gas ejection ports 31 provided on an electrode plate 30 .

In the film forming apparatus having the above configuration, after the vacuum chamber 11 is brought to a predetermined atmospheric pressure by exhausting air from the exhaust ports 32a and 32b, the reaction gas is supplied from the reaction gas cylinder 28 through the reaction gas introduction pipe 27, and the reaction gas is supplied to the electrodes. The gas flows uniformly from the gas outlet 31 of the plate 30 and reaches the substrate electrode 12 . When a high frequency voltage is applied by the high frequency power source 33, plasma is generated between the high frequency electrode 26 and the substrate electrode 12, and a part of the excited reaction gas is transferred to the surface of the substrate (not shown) on the substrate electrode 12. It adheres to form a thin film. At this time, according to this embodiment, the substrate (not shown) is connected to the outer heater 13 embedded in the substrate electrode 12.
a, 13b, 13c and inner heaters 14a, 14
temperature detection elements 15a, 15b
The temperature is detected by Outside heater 13a, 1
3b, 13c and the inner heaters 14a, 14b are heated by separate power supplies 22a, 22b, respectively, and the heaters are heated by a control signal from the temperature controller 24 so that the detected values of the temperature detectors 23a, 23b become predetermined values. Power supplies 22a and 22b are controlled. Furthermore, cooling gas introduction grooves 16a, 16b are located at positions corresponding to the outer heaters 13a, 13b, 13c.
Cooling gas is separately introduced into cooling gas introduction grooves 17a and 17b located at positions corresponding to inner heaters 14a and 14b. Flow regulators 25a and 25
b receives a control signal from the temperature controller 24, adjusts the flow rate of the cooling gas, and controls the cooling of the substrate electrode 12.

As described above, the divided outer heaters 13a, 1
3b, 13c and the applied voltage to the inner heaters 14a, 14b and the cooling gas introduction grooves 16a, 16b, 17
By individually controlling the amount of cooling gas introduced into a and 17b based on the values detected by temperature detection elements 15a and 15b, the surface temperature of the substrate mounted on the substrate electrode 12 can be made more uniform and accurate. It can be kept well.

Although this example shows an example using a reactive gas, the present invention can be applied to any method of forming a film by heating a substrate, and the number of divisions of the heater and cooling gas grooves can be reduced. By increasing the number, highly accurate temperature control can be obtained.

〔Effect of the invention〕

According to the thin film forming apparatus of the present invention, it is possible to control the temperature of the substrate surface on which a thin film is formed with high precision and to make the temperature distribution uniform over a wide range, thereby improving film quality, uniformity of film characteristics over a wide range, and film thickness distribution. uniformity can be measured.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the substrate electrode structure of a conventional film forming apparatus, and FIG. 2 is a configuration diagram showing the basic structure of a film forming apparatus equipped with a substrate electrode according to an embodiment of the present invention.
FIG. 3 is an enlarged sectional view showing the structure of the substrate electrode section of FIG. 2. FIG. 12...Substrate electrode, 13a, 13b, 13c,
14a, 14b...Heater, 15a, 15b...Temperature detection element, 16a, 16b, 17a, 17b...
...Cooling gas introduction groove, 22a, 22b...Power supply, 2
3a, 23b...Temperature detector, 24...Temperature controller, 25a, 25b...Gas flow rate regulator.

Claims (1)

[Scope of Claims] 1. A thin film forming apparatus for forming a thin film on the surface of a substrate to be processed inside a vacuum processing chamber, wherein the substrate to be processed is placed in the vacuum processing chamber, and a plurality of heating means and a plurality of heating means are placed inside the vacuum processing chamber. A substrate electrode having cooling means and a plurality of temperature detection means is provided, and temperature control means is connected to the plurality of heating means, the plurality of cooling means, and the plurality of temperature detection means outside the vacuum processing chamber. and maintaining the substrate electrode at a predetermined temperature and temperature distribution by controlling the plurality of heating means and the plurality of cooling means with the temperature control means based on the detection results of the plurality of temperature detection means. A thin film forming device featuring: 2. The control means individually controls the amount of heating of the plurality of heating means and/or the amount of cooling of the plurality of cooling means based on the temperature data of the substrate electrode detected by the plurality of temperature detection means. 2. The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is configured to individually control the following. 3. The plurality of heating means includes a first plurality of heaters embedded near the center of the substrate electrode and a second plurality of heaters embedded outside the first plurality of heaters, The plurality of cooling means includes a first flow path section provided near the first plurality of heaters for flowing a cooling medium, and a first flow path section provided near the second plurality of heaters for flowing a cooling medium. 2. The thin film forming apparatus according to claim 1, further comprising a second flow path section. 4. The plurality of temperature detection means includes a first temperature detection section embedded inside the substrate electrode at a position adjacent to at least the first plurality of heaters and the first flow path section; a second temperature detection section embedded in a position adjacent to the second plurality of heaters and the second flow path section, the first temperature detection section and the second temperature detection section; 2. The thin film forming apparatus according to claim 1, wherein the temperature inside the substrate electrode is detected by: