JPH0564747B2 - - Google Patents
Info
- Publication number
- JPH0564747B2 JPH0564747B2 JP59260783A JP26078384A JPH0564747B2 JP H0564747 B2 JPH0564747 B2 JP H0564747B2 JP 59260783 A JP59260783 A JP 59260783A JP 26078384 A JP26078384 A JP 26078384A JP H0564747 B2 JPH0564747 B2 JP H0564747B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoresistors
- cantilever
- semiconductor
- resistors
- piezoresistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000001133 acceleration Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26078384A JPS61139758A (ja) | 1984-12-12 | 1984-12-12 | 半導体加速度センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26078384A JPS61139758A (ja) | 1984-12-12 | 1984-12-12 | 半導体加速度センサ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6169533A Division JP2650623B2 (ja) | 1994-07-21 | 1994-07-21 | 半導体加速度センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61139758A JPS61139758A (ja) | 1986-06-27 |
| JPH0564747B2 true JPH0564747B2 (zh) | 1993-09-16 |
Family
ID=17352666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26078384A Granted JPS61139758A (ja) | 1984-12-12 | 1984-12-12 | 半導体加速度センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61139758A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0713644B2 (ja) * | 1986-11-14 | 1995-02-15 | 日本電装株式会社 | 半導体式加速度検出装置 |
| JPH0648421Y2 (ja) * | 1987-07-08 | 1994-12-12 | 日産自動車株式会社 | 半導体加速度センサ |
| DE3816628A1 (de) * | 1987-09-30 | 1989-04-20 | Aisin Seiki | Beschleunigungsmessvorrichtung |
| JPH0664085B2 (ja) * | 1989-05-23 | 1994-08-22 | 日本電装株式会社 | 半導体式加速度検出装置 |
| JPH0413975A (ja) * | 1990-05-07 | 1992-01-17 | Nec Corp | 半導体加速度センサ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5634109A (en) * | 1979-08-29 | 1981-04-06 | Fujitsu Ltd | Magnetic recording apparatus |
-
1984
- 1984-12-12 JP JP26078384A patent/JPS61139758A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5634109A (en) * | 1979-08-29 | 1981-04-06 | Fujitsu Ltd | Magnetic recording apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61139758A (ja) | 1986-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4342227A (en) | Planar semiconductor three direction acceleration detecting device and method of fabrication | |
| US5447067A (en) | Acceleration sensor and method for manufacturing same | |
| JPS6341080A (ja) | 半導体加速度センサ | |
| JP2575939B2 (ja) | 半導体加速度センサ | |
| US20040025591A1 (en) | Accleration sensor | |
| US7343808B2 (en) | Line pressure compensated differential pressure transducer assembly | |
| US5744719A (en) | Integrated micromechanical sensor device | |
| JPH0567073B2 (zh) | ||
| JP2560140B2 (ja) | 半導体装置 | |
| JPH07113647B2 (ja) | 半導体加速度センサ | |
| KR100508198B1 (ko) | 가속도 센서 | |
| KR20030026872A (ko) | 가속도 센서 | |
| US5911157A (en) | Tunnel effect sensor | |
| JPH0564747B2 (zh) | ||
| JP2001183254A (ja) | 圧力センサ | |
| JP2650623B2 (ja) | 半導体加速度センサ | |
| JPH05281251A (ja) | 加速度センサおよびその製造方法 | |
| JP3330831B2 (ja) | 歪検出センサ | |
| JP3019549B2 (ja) | 半導体加速度センサ | |
| JPH08248060A (ja) | 半導体加速度検出装置 | |
| JPH1144705A (ja) | 半導体加速度センサおよびその製造方法 | |
| JP2864700B2 (ja) | 半導体圧力センサ及びその製造方法 | |
| JPH0830716B2 (ja) | 半導体加速度検出装置 | |
| JPH0426051B2 (zh) | ||
| JPH01236659A (ja) | 半導体圧力センサ |