JPH0563127A - Lead frame for semiconductor device - Google Patents

Lead frame for semiconductor device

Info

Publication number
JPH0563127A
JPH0563127A JP3221938A JP22193891A JPH0563127A JP H0563127 A JPH0563127 A JP H0563127A JP 3221938 A JP3221938 A JP 3221938A JP 22193891 A JP22193891 A JP 22193891A JP H0563127 A JPH0563127 A JP H0563127A
Authority
JP
Japan
Prior art keywords
section
lead
lead frame
resin
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3221938A
Other languages
Japanese (ja)
Inventor
Masao Ueda
正夫 植田
Masahiro Ibe
雅博 伊部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP3221938A priority Critical patent/JPH0563127A/en
Publication of JPH0563127A publication Critical patent/JPH0563127A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To satisfy different characteristics required for each of a sealing section and an outer lead section by making the quality of material of the section sealed with a resin or low melting-point glass and the outer lead section. CONSTITUTION:A lead frame 31 in a section sealed with a resin 4 is composed of a copper material for improving adhesive properties with the resin 4, and an outer lead section 3 is constituted of a 42 alloy material having strength higher than the copper material in order to prevent lead bending. A lead frame 33 in a section sealed with glass is organized of a 45 alloy material having a thermal expansion coefficient approximating to that of low melting-point glass 5, and an outer lead section 32 is constructed of a copper material easy to be machined so as not to generate a glass crack, etc., at the time of lead machining. Accordingly, different characteristics required for each of the sealing section and the outer leads can be satisfied simultaneously.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体装置用リードフレ
ームに関し、特に樹脂または、低融点ガラスにて封止す
るタイプの半導体装置用のリードフレームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for a semiconductor device, and more particularly to a lead frame for a semiconductor device of a type sealed with resin or low melting point glass.

【０００２】[0002]

【従来の技術】従来の半導体装置用リードフレームは、
図３に示すように、樹脂４にて、封止される部分３４を
外部リード部３とが、同一金属材料で形成されていた。2. Description of the Related Art Conventional lead frames for semiconductor devices are
As shown in FIG. 3, the portion 34 sealed with the resin 4 and the external lead portion 3 were formed of the same metal material.

【０００３】[0003]

【発明が解決しようとする課題】この従来の半導体装置
用リードフレームは、同一金属材料で封止部と外部リー
ド部とが形成さているため、封止部と外部リード部に要
求される相異なる特性を同時に満足させることが困難で
あった。In this conventional lead frame for a semiconductor device, since the sealing portion and the external lead portion are formed of the same metal material, the sealing portion and the external lead portion are different from each other. It was difficult to satisfy the characteristics at the same time.

【０００４】本発明の目的は、封止部と外部リード部そ
れぞれに要求される相異なる特性を同時に満足させるこ
とができる半導体装置用リードフレームを提供すること
にある。An object of the present invention is to provide a lead frame for a semiconductor device which can simultaneously satisfy different characteristics required for the sealing portion and the external lead portion.

【０００５】[0005]

【課題を解決するための手段】本発明の半導体装置様リ
ードフレームは、封止部と外部リード部とが異なる金属
材料にて形成されている。In the semiconductor device-like lead frame of the present invention, the sealing portion and the external lead portion are made of different metal materials.

【０００６】[0006]

【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例を用いた樹脂封止型半導体
装置の断面図である。樹脂封止される部分のリードフレ
ーム３１は、樹脂との密着性を上げるため銅材で構成さ
れている。また、外部リード部３は、リード曲がり防止
のため銅材よりも高強度の４２合金材で構成されてい
る。The present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a resin-sealed semiconductor device using an embodiment of the present invention. The resin-sealed portion of the lead frame 31 is made of a copper material in order to improve the adhesion with the resin. Further, the outer lead portion 3 is made of a 42 alloy material having a higher strength than the copper material in order to prevent the lead from bending.

【０００７】図２は本発明の他の実施例を用いたガラス
封止型半導体装置の断面図である。ガラス封止される部
分のリードフレーム３３は、低融点ガラスと熱膨張係数
の近似している４５合金材で構成されている。また、外
部リード部３２は、リード加工時にガラスクラック等を
生じさせない様、加工の容易な銅材で構成されている。
なおリードフレームはクラッド法，溶接などで構成でき
る。FIG. 2 is a sectional view of a glass-sealed semiconductor device using another embodiment of the present invention. The lead frame 33 in the glass sealed portion is made of low melting glass and 45 alloy material having a thermal expansion coefficient close to that of the 45 alloy material. Further, the outer lead portion 32 is made of a copper material that is easily processed so as not to cause glass cracks or the like during the lead processing.
The lead frame can be constructed by the clad method or welding.

【０００８】[0008]

【発明の効果】以上説明したように本発明のリードフレ
ームは、樹脂または低融点ガラスにて封止される部分
と、外部リード部との材質を変えているので、それぞれ
に要求される相違なる特性を同時に満足させられるとい
う効果を有する。As described above, in the lead frame of the present invention, the material sealed between the resin and the low melting point glass and the external lead portion are made different from each other. It has the effect that the characteristics can be satisfied at the same time.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例のリードフレームを用いた樹
脂封止型半導体装置の断面図である。FIG. 1 is a sectional view of a resin-sealed semiconductor device using a lead frame according to an embodiment of the present invention.

【図２】本発明の他の実施例のリードフレームを用いた
ガラス封止型半導体装置の断面図である。FIG. 2 is a sectional view of a glass-sealed semiconductor device using a lead frame according to another embodiment of the present invention.

【図３】従来の半導体装置用リードフレームを用いた樹
脂封止型半導体装置の断面図である。FIG. 3 is a cross-sectional view of a resin-sealed semiconductor device using a conventional semiconductor device lead frame.

【符号の説明】[Explanation of symbols]

１ 半導体素子 ２ ボンディングワイヤー ３ リードフレーム ４ 封止樹脂 ５ 低融点ガラス ６ キャップ ７ ベース 1 semiconductor element 2 bonding wire 3 lead frame 4 sealing resin 5 low melting point glass 6 cap 7 base

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 半導体装置用リードフレームにおいて、
樹脂または低融点ガラスにて封止される部分と、外部リ
ード部との材質が異なることを特徴とする半導体装置用
リードフレーム。1. A lead frame for a semiconductor device,
A lead frame for a semiconductor device, characterized in that a material sealed between a resin or a low melting point glass and an external lead portion are different from each other.
JP3221938A 1991-09-03 1991-09-03 Lead frame for semiconductor device Pending JPH0563127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3221938A JPH0563127A (en) 1991-09-03 1991-09-03 Lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3221938A JPH0563127A (en) 1991-09-03 1991-09-03 Lead frame for semiconductor device

Publications (1)

Publication Number Publication Date
JPH0563127A true JPH0563127A (en) 1993-03-12

Family

ID=16774515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3221938A Pending JPH0563127A (en) 1991-09-03 1991-09-03 Lead frame for semiconductor device

Country Status (1)

Country Link
JP (1) JPH0563127A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933867B2 (en) 2003-11-12 2005-08-23 Denso Corporation A/D conversion processing apparatus providing improved elimination of effects of noise through digital processing, method of utilizing the A/D conversion processing apparatus, and electronic control apparatus incorporating the A/D conversion processing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223274A (en) * 1982-06-22 1983-12-24 株式会社東芝 Lead part and method of producing same
JPH02152126A (en) * 1988-12-03 1990-06-12 Omron Tateisi Electron Co Contactless switch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223274A (en) * 1982-06-22 1983-12-24 株式会社東芝 Lead part and method of producing same
JPH02152126A (en) * 1988-12-03 1990-06-12 Omron Tateisi Electron Co Contactless switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933867B2 (en) 2003-11-12 2005-08-23 Denso Corporation A/D conversion processing apparatus providing improved elimination of effects of noise through digital processing, method of utilizing the A/D conversion processing apparatus, and electronic control apparatus incorporating the A/D conversion processing apparatus

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Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 19970617