JPH0562920A - Manufacture of single crystal film - Google Patents

Abstract

PURPOSE:To form a single crystal film on a substrate at low cost by a method wherein single crystal species are affixed to the surface of a substrate, and after a material film has been formed on the substrate surface, it is single crystallized with the single crystal species as the starting point using a band fusing method. CONSTITUTION:Silicon single crystal species 2, consisting of crystal surface (100), for example, is glued to the surface of a substrate 1 by silanol reaction, and besides, a polycrystalline crystallized film 3, consisting of polysilicon and the like, is formed thereon using a CVD method. The crystallized film 3 is single crystallized in crystal orientation <100> by scan-fusing it while the substrate 1 is being heated from the back side using a stripe or circular heater and the like. As a result, a single crystal film can be formed on the long-sized substrate at low cost, and when a solar battery is manufactured by the obtained semiconductor single crystal film, a solar battery of high efficiency of 20% or higher can be mass-produced at low cost.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a single crystal film, and more particularly to a method for manufacturing a semiconductor single crystal film.

[0002]

Conventionally, zone melting recrystallization (ZMR: Z one M el
ting R ecrystallisation) method (10
A silicon oxide film is formed on the (0) surface of the single crystal silicon, a few millimeters around the silicon oxide film are removed by etching, and a polysilicon film having a thickness of 0.1-2 μm is formed on the surface without the single crystal seed portion by the CVD method. A method of forming and forming a single crystal silicon film on an insulating film by re-crystallizing by scanning from a part of the single crystal seed portion in a <100> direction with a stripe heater while forming a melting region on the surface. There was such a thing.

[0003]

However, according to the above-mentioned prior art, when a single crystal semiconductor film is used as a solar cell, for example, the cost of the semiconductor single crystal substrate is high. An object of the present invention is to solve the problems of the prior art and to provide a method for forming a single crystal film on a low-cost substrate.

[0004]

In order to solve the above problems and achieve the above objects, the present invention relates to a method for producing a single crystal film, which comprises: (1) a single crystal seed attached to one surface of a substrate, After forming an amorphous film or a polycrystalline film of a material film for the purpose of forming a single crystal film on the substrate surface so that at least a part of the single crystal seed is in contact, a recrystallization test by a zone melting method starting from the single crystal seed is performed, A means for forming a single crystal film, and (2) a means for forming the substrate according to claim 1 as an insulator, and (3) a method for forming the substrate according to claim 1 on a conductor or an insulator substrate surface with heat resistance. Means for forming a conductive conductive film, and (4) a means for sticking the single crystal seed according to claim 1 to the other surface of the substrate.

[0005]

EXAMPLES The present invention will be described in detail below with reference to examples.

FIG. 1 is a sectional view showing an embodiment of the present invention. That is, on the surface of the substrate 1 made of quartz or the like,
For example, a single crystal seed 2 of silicon having a (100) crystal plane is attached by a silanol reaction, and further CVD is performed thereon.
A polycrystalline crystallization film 3 made of polysilicon or the like is formed by a sputtering method, and is preheated from the back surface of the substrate 1 by the heater 4 while being scanned and melted in a <100> crystal orientation by a stripe or circular heater to be crystallized. The film 3 can be made into a single crystal film. The single crystal film is not limited to silicon and other materials may be used. Further, it is possible to fabricate a long object by continuous processing.

FIG. 2 is a sectional view showing another embodiment of the present invention. That is, after the surface of a substrate 11 made of a heat-resistant alloy plate such as an iron plate is covered with an insulating film 12 such as a quartz film by a CVD method or the like, and a single crystal or the like 3 is attached to a part of the insulating film 12. , The single crystallized film 14 is formed, and the single crystallized film is formed by the same zone melting method as in the previous example. The substrate 1
1 may be ceramic or the like, and further, the insulating film 12
May be a conductive film such as an indium / tin oxide film or a molybdenum film, in which case it can be used as one of the electrophores in the case of a solar cell.

FIG. 3 is a sectional view showing another embodiment of the present invention. That is, the insulating film 2 is formed on the surface of the substrate 21.
2, the single crystal seed 5 is attached to the insulating film 22 on the side surface of the substrate 21, and the single crystallized film 24 is formed on the surface of the insulating film 22 including the surface of the single crystal seed 25. The chemical film 24 is monocrystallized by the zone melting method.

[0009]

According to the present invention, it becomes possible to form a single crystal film on a substrate at a low cost up to a long product,
When a solar cell using a semiconductor single crystal film is manufactured using the present invention, there is also an effect that a solar cell having a high efficiency of 20% or more can be mass-produced at low cost.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a sectional view showing another embodiment of the present invention.

FIG. 3 is a sectional view showing another embodiment of the present invention.

[Explanation of symbols]

 1, 11, 21 ... Substrate 2, 13, 23 ... Single crystal seed 3, 14, 24 ... Crystallized film 4 ... Backup heater 5 ... Stripe heater 12, 22 ... Insulation film

Claims (4)

[Claims] 1. A single crystal seed is attached to one surface of a substrate, and an amorphous film or a polycrystalline film of a material film intended to be a single crystal film is formed on the surface of the substrate so that at least a part of the single crystal seed is in contact with the surface. A method for producing a single crystal film, which comprises forming a single crystal film, forming a single crystal seed, and performing a recrystallization test by a zone melting method to form a single crystal film. 2. The method for producing a single crystal film according to claim 1, wherein the substrate is an insulator. 3. The method for producing a single crystal film according to claim 1, wherein the substrate is a conductor or insulator substrate on which a heat-resistant conductive film is formed. 4. The method for producing a single crystal film according to claim 1, wherein the single crystal seed is attached to the other surface of the substrate.