JPH0558269B2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention provides at least one PN or PIN junction.
A plurality of photoelectric conversion elements (also simply referred to as elements) each having a non-single crystal semiconductor including an amorphous semiconductor provided on a transparent insulating substrate are electrically connected in series,
This invention relates to a processing method for manufacturing a photoelectric conversion device that generates high voltage using a laser.

[Conventional technology and its problems]

As a method for manufacturing semiconductor devices, there is a laser scribing method using a laser. Since this method processes and removes semiconductors and conductive films using a computer-controlled laser beam, it is a maskless process and is particularly suitable for mass production of solar cells.

However, when the electrode conductor provided on the semiconductor is scribed using laser light to separate the electrodes from each other, the laser light has a high temperature of 1800°C, so In some cases, hydrogenated amorphous semiconductors became polycrystalline and became conductive. Additionally, compounds were formed with the semiconductor beneath the groove, resulting in performance deterioration.

Furthermore, conventionally, silver or aluminum, which is a light reflective metal, has been simply used on the oxide conductive film of the back electrode of a photoelectric conversion semiconductor device or the like.

However, silver has poor adhesion to the oxide conductive film and easily peels off. Aluminum undergoes an oxidation reaction at the interface with the oxide conductive film and becomes an aluminum oxide insulator. For these reasons, improvements to each layer on the oxide conductive film have been required.

[Purpose of the invention]

An object of the present invention is to provide a method for scribing an oxide conductive film well when manufacturing a semiconductor device or the like by laser scribing.

[Means to solve the problem]

In order to achieve the above object, the present invention provides a multilayer film on a non-single crystal semiconductor on a substrate, which has an oxide conductive film in close contact with the semiconductor and a metal film mainly composed of chromium or nickel on the upper surface. and a step of selectively removing the multilayer film by irradiating the multilayer film with laser light to form an open groove.

The present invention also provides a step of forming a plurality of first electrode regions by irradiating a conductive film on a substrate having an insulating surface with a laser beam to form a first trench, and a step of forming a plurality of first electrode regions by forming a plurality of first trenches. forming a non-single crystal semiconductor having at least one PN or PIN junction on an electrode region; and irradiating the semiconductor on each of the first electrode regions with a laser beam to selectively remove the semiconductor. forming a second groove exposing the first electrode; an oxide conductive film on the semiconductor and in the second groove; and a metal film mainly containing chromium or nickel on the upper surface. and a step of selectively removing the multilayer film by irradiating the multilayer film with a laser beam to form a third groove and separating it into a plurality of second electrode regions. As a result, an element in which the first electrode, the semiconductor, and the second electrode are stacked is formed in each of the first electrode regions, and one of the elements and It is characterized in that adjacent elements are connected in series.

This invention forms a multilayer film having an oxide conductive film and a metal film mainly composed of chromium or sulfur on the upper surface on a non-single crystal semiconductor, and irradiates this multilayer film with laser light. It is possible to selectively remove and form an open trench without damaging the underlying semiconductor or damaging it only to a depth of 500 Å or less.

The arrangement, size, and shape of elements in the device of the present invention are determined by design specifications. However, in order to simplify the content of the present invention, in the following detailed description, the first electrode on the lower side (substrate side) of the first element and the second electrode on the right side of the first electrode will be described. 2
This description is based on the case where the electrodes (on the semiconductor, that is, on the side away from the substrate) are electrically connected in series.

In such a configuration, the third groove for separating the second electrodes of the first element and the second element from each other is made of indium oxide or tin oxide in close contact with the P or N type non-single crystal semiconductor layer. Laser light is applied to the multilayer film, which has a conductive film mainly composed of oxide conductive film and a metal film mainly composed of chromium or nickel (hereinafter simply referred to as chromium or nickel) on the upper surface. Form by doing.

That is, although the oxide conductive film is easily removed thermally by laser light, it is transparent and has low heat absorption.
Further, chromium has a melting point that is almost the same temperature as the irradiated laser light, and absorbs the irradiated light sufficiently.

Therefore, by relatively combining both of these, the oxide conductive film in the groove and the top layer can be formed without polycrystallizing the non-single crystal semiconductor under the groove irradiated with laser light due to heat. It was possible to selectively remove only the following metals.

That is, the present invention provides a second
The conductor for the electrode is scribed using a laser beam,
The electrodes are separated from each other, but at that time, they are exposed to laser light at a high temperature of 1800℃.
In order to prevent the underlying semiconductor, especially the hydrogenated amorphous semiconductor, from becoming polycrystalline and becoming conductive, chromium or nickel is laminated on the oxide conductive film, and a third groove is formed by laser scribing. It is possible to form a compound with the underlying semiconductor, and also to prevent polycrystallization of this semiconductor due to laser annealing.

In addition, for example, 500% of chromium is added onto the oxide conductive film.
It was formed to a thickness of ~5000 Å. Experiments revealed that the oxide conductive film and chromium do not undergo interfacial oxidation because chromium has heat resistance (melting point 1800°C, boiling point 2660°C) and is a material that does not easily react with other materials. did. Furthermore, the resistance of the ohmic contact with the oxide conductive film was low, making it extremely desirable as a method for scribing the oxide conductive film with a laser.

The present invention provides a back electrode as a photoelectric conversion device, for example, a close portion of the N-type semiconductor layer with the electrode.
SixC _1-X (0 < In order to prevent the formation of an aluminum oxide insulator at the interface, for example, when aluminum is used, a two-layer structure in which chromium or nickel is laminated closely to an oxide conductive film, and a layer of 100 Å or more is used. Layer titanium with the following thickness, silver with a thickness of 100 to 500 Å on the top surface, and chromium with a thickness of 500 to 5000 Å on the top surface.
It may also have a layered structure.

The present invention is a maskless process and is effective for manufacturing a connecting portion that connects two elements using a laser scribing method.

The details of the invention are shown below with reference to the drawings.

〔Example〕

FIG. 1 is a longitudinal sectional view showing the manufacturing process of the present invention.

In the drawings, a transparent substrate 1 having an insulating surface, such as a glass plate (for example, a thickness of 0.6 to 2.2 mm, for example, 1.2
mm, length (in the left-right direction in the drawing) 60 cm, width 20 cm). Furthermore, a light-transmitting conductive film such as ITO (indium oxide/tin oxide mixture, i.e., a film in which 10% by weight of tin oxide is added to indium oxide) (approximately 1500 Å) + SnO ₂ (200 to 400
) or a translucent conductive film (1500~2000
Å) was formed by vacuum evaporation, LPCVD, plasma CVD, or spraying.

Thereafter, an output of 1 to 3 W (focal length 40 mm) was applied using a YAG laser processing machine (wavelength: 1.06 μ or 0.58 μ, manufactured by Nippon Laser), and a spot diameter of 20 to 70 μφ, typically 50 μφ, was controlled by a microcomputer.
Furthermore, this irradiated laser beam was scanned to form first grooves 13 as scribe lines, and first electrodes 2 were produced in each element region 31, 11.

The first open groove 13 formed by this first laser scribe has a width of approximately 50μ and a length of 20cm.
Each of the electrodes of the light-transmitting conductive film was completely cut off, and each element was electrically separated to form a first electrode.

Thereafter, a non-single crystal semiconductor layer 3 for generating photovoltaic force by light irradiation is formed on the upper surface of the electrode 2 and the groove 13 by plasma CVD or LPCVD.
It was formed to a thickness of 0.8μ, typically 0.5μ.

A typical example is a P-type semiconductor (SixC _1-X X=0.8 approx.
100 Å) - I-type amorphous or semi-amorphous silicon semiconductor (approximately 0.5 μ) - Semiconductor silicon having N-type microcrystals (approximately 500 Å)
SixC _{1 -}
SixGe _1-X semiconductor - two types of N-type Si semiconductor
Tandem type with PIN junction and one PN junction
PINPIN...This is a semiconductor 3 of PIN junction.

The non-single crystal semiconductor 3 was formed to have a uniform thickness over the entire surface.

Furthermore, as shown in FIG.
The open grooves 18 were formed by a second laser scribing process.

In this drawing, the first and second open grooves 13, 18
The centers of the two are shifted by 100μ.

The second open groove 18 thus exposed the side surfaces 8, 9 of the first electrode.

Further, this substrate was diluted with dilute hydrofluoric acid (1/10HF, which is 48% HF diluted with 10 times water, was used here) for 10 minutes.
Etching was performed for 30 seconds to 1 minute, typically 30 seconds. this is
It may also be carried out by plasma vapor phase etching using CF ₄ and microwaves without causing spatter on the semiconductor surface.

As a result, the semiconductor 3 and the transparent conductive film 2 were laser scribed to remove low-grade porous silicon oxide produced by reacting with oxygen in the atmosphere. In addition, some of the glass on the substrate is removed,
A side etch of 0.1 to 5 μ in the depth direction and 0.1 to 10 μ in the lateral direction, for example, 0.3 μ in depth and 3 μ in the lateral direction, was performed. In this way, the recess 7 and the bottom surface 6 of the transparent conductive film 37 were exposed.

In FIG. 1, as shown in FIG. 2C, a second electrode 4 and a connector 30 on the back side are formed on the top surface, and a third An open groove 20 was obtained.

This second electrode 4 is formed by forming oxide conductive films 45, 45', which is a feature of the present invention, in close contact with a P or N type semiconductor. Its thickness is 100~3000Å
It was formed to a thickness of .

As this oxide conductive film, ITO (a mixture whose main components are indium oxide and tin oxide) 4
5 was formed. It is also possible to form this oxide conductive film using indium oxide or tin oxide as a main component.

This ITO is extremely susceptible to wrap-around during film formation. For this reason, it fits well into groove 7,
It became possible to electrically connect well with the bottom surface 6 of the transparent conductive film 37.

The second groove may be scribed only on the semiconductor to expose the surface of the first electrode, and a contact with the second electrode may be formed on the first electrode within the groove.

These were formed using electron beam evaporation or PCVD at a temperature of 300°C or lower to avoid deteriorating the semiconductor layer.

This oxide conductive film, ITO, is extremely important in the present invention. The effect is as follows: [1] The metals 46 and 46' of the second electrode are made of silicon 3
This prevents the metal from forming an alloy layer and being abnormally diffused into the semiconductor 3, thereby preventing the upper and lower electrodes from being shot. That is, it is useful for improving reliability at the back electrode-semiconductor interface in high-temperature storage tests at 150 to 200°C.

[2] When forming the third open groove 20 of the present invention, the laser scribing metal 46 enters the semiconductor 3 due to the high temperature of 1800° C. or more of the laser beam, especially in the scribing region 20, causing the metal 46 to enter the semiconductor 3 and cause damage between the electrodes 39 and 38. This can prevent leakage current of 10 ^-7 A/cm or more from occurring. Therefore, it is possible to prevent a decrease in manufacturing yield due to the formation of the third open groove.

[3] By forming an oxide conductive film that is compatible with the P- or N-type semiconductor on the semiconductor, that is, by providing an oxide conductive film whose main component is ITO or indium oxide in close proximity to the N-type semiconductor, By lowering the contact resistance between the semiconductor and the electrode, it is possible to improve the fill factor and conversion efficiency.

[4] Due to the strong wrapping, a contact is formed with the bottom surface of the first electrode 37 of the first element in the connecting portion 12, and since they are both oxides, this contact portion has increased insulation at the interface during long-term use. Never. That is, if there is contact between a metal such as aluminum and the transparent conductive film 37, the metal will react with the oxygen of the transparent conductive film over a long period of time, producing insulation at this interface. In the oxide-oxide contact using a conductive film, such insulation does not occur at the contact interface, and reliability is greatly improved.

[5] Promote reflection of long-wavelength light that is not absorbed within the semiconductor 3 in the incident light 10 by the reflective metal 46, and in particular, set the ITO thickness to 900 to 1400 Å, preferably an average thickness of 1050 Å, and set the length of 600 to 800 nm. This is effective in increasing the reflection of wavelength light and improving conversion efficiency.

[6] The connector is also composed of this oxide conductive film, and is suitable for semiconductors, especially sensitive active I of PIN semiconductors.
Since it is adjacent to the layer, it prevents the metal from migrating.

The following metals were investigated as metals on the oxide conductive film.

Melting point Boiling point Thermal conductivity (℃) (℃) cal/(cm・sec・deg) Cr 1800 2660 0.2 Ni 1455 3075 0.198 Ti 1725 3262 0.05 Ag 960.5 1927 0.998 Al 658.8 2280 0.487 The metal on the oxide conductive film has the following properties: It is preferable to have a melting point that is approximately the same as the temperature of the laser scribing light (1800 to 2200°C), and a thermal conductivity that is neither too high nor too low. i.e. 600Å for silver and aluminum
The above-mentioned conduction in the lateral direction (film direction) is too large, and it tends to react with the semiconductor below, and furthermore, the semiconductor becomes polycrystalline due to heat. Further, the trench easily penetrates the semiconductor layer and reaches the first conductive film.

On the other hand, titanium has a low thermal conductivity and a high melting point, so it is impossible to use titanium with a thickness of 200 Å or more.

From these results, it was found that chromium or nickel is an excellent metal on the oxide conductive film.
Experimentally, only the second electrode was removed by laser scribing, but the semiconductor layer was not removed, and it was found to be an ideal metal.

In order to improve the low optical reflectance of chromium or nickel and, in turn, improve the conversion efficiency of the device, we used silver that increases reflection between the oxide conductive film to a thickness of less than 500 Å, and titanium and silver. It was interposed to improve adhesion with the oxide conductive film. However, silver has a high thermal conductivity, so the thickness must be less than 500 Å. Also, titanium has too high heat resistance, so it must be 100 Å or less. That is, the back electrode is (1) oxide conductive film (100 to 3000 Å) Cr (300 to 5000 Å)
Å) (2) Oxide conductive film (100~3000Å) Ni (300~5000Å)
(3) Oxide conductive film (100-1500Å) Ti (<100Å)
Ag (100-500 Å), Cr or Ni (300-5000 Å) was superior in laser scribing processability.

When using chromium (1) in these back electrodes, the oxide conductive film underneath is also completely removed at the same time by laser scribing.
Manufacturing yield is high. However, soldering for external contact cannot be done. On the other hand, (2) nickel tends to leave part of the oxide conductive film underneath after laser scribing, so it was necessary to remove the oxide conductive film remaining on the surface with hydrochloric acid after laser scribing.
Although (3) has excellent light reflection, it has the disadvantage that manufacturing four layers is troublesome.

Next, in FIG. 1C of the present invention, the third groove 20 is formed so that the oxide conductive film 45 constituting the second electrode and the connector 30 are not electrically shortened.
or 500 to avoid damaging the semiconductor underneath
The first
It was provided over the element region 31 of.

That is, by forming a multilayer film comprising the oxide conductive film of the present invention and chromium or nickel on the upper surface, each component interacts with each other and vaporizes and scatters when irradiated with laser light. without polycrystallizing or removing non-single-crystalline semiconductors containing amorphous silicon.
It has been experimentally found that it is ideal as a symmetrical electrode for laser irradiation.

As a result of this step, the electrical isolation between the electrodes 39 and 38 where the open circuit voltage of the first element is generated is achieved by applying a laser beam (20 to 100μφ, typically 50μφ) to the second open groove 18.
They were formed at a distance of about 100μ from each other. That is, the third
The center of the open groove 20 is provided on the first element side at a depth of 50 to 200 μm, typically 100 μm, compared to the center of the second open groove 30.

In the figure, the second electrode 4 is connected to the third electrode.
This figure shows the case where the open groove 20 is formed by cutting and separating by irradiating the laser beam from above with a laser scribe.

Furthermore, the semiconductor layer under this groove 20 is heated at room temperature to 200°C.
℃ oxidation atmosphere (1 to 10 days of oxidation) or plasma oxidation atmosphere (100 to 250℃ for 1 to 5 hours) to form silicon oxide 34 to a thickness of 100 to 1000 Å, and then form the two electrodes 39. , 38 was further prevented.

In this way, as shown in FIG. 1C, a photoelectric conversion device in which a plurality of elements 31, 11 are directly connected by the connecting portion 12 was able to be manufactured.

FIG. 1D shows an attempt to further complete the present invention as a photoelectric conversion device, that is, a silicon nitride film 2 is made by plasma vapor phase method as a passivation film.
1 was uniformly formed to a thickness of 500 to 2000 Å to further prevent leakage current between each element due to adsorption of moisture, etc.

Furthermore, an external lead-out terminal was provided at the peripheral portion 5.

These were filled with an organic resin 22 such as polyimide, polyamide, Kapton or epoxy.

In this way, the photovoltaic force generated by the irradiation light 10 flows from the first electrode of the first element to the second electrode of the second element through the bottom contact as shown by the arrow 32, thereby making it possible to connect them in series.

As a result, each element on this board (60 cm x 20 cm) has a width of 14.35 mm, a width of the connecting part of 150 μm, a width of the external lead electrode part of 10 mm, and a peripheral part of 4 mm.
There are 40 stages within mm x 192 mm, and the effective area (192 mm x
14.35 mm 40 steps 1102 cm ² or 91.8%).

And if the segment has an exchange efficiency of 10.8 (1.05 cm), the panel will have an exchange efficiency of 7.7% (theoretically
9.8%, but the effective conversion efficiency decreased due to the resistance of the 40-stage connection) (AM1 [100mW/cm ² ]),
It was possible to have an output power of 8.1W.

Furthermore, when this panel is subjected to a high temperature storage test at 150℃, the percentage decreases to below 10% after 1000 hours, for example, 20 panels.
The worst case scenario was a decline of only 4% (X = 1.5%).

This is an astonishing value considering that when conducting a reliability test under the same conditions using the conventional mask method, as many as 17 panels were rendered inoperable in 10 hours.

FIG. 2 is a longitudinal cross-sectional view and a plan view (end portion) showing the most typical positional relationship of the grooves formed in three laser scribing steps.

The numbers and steps are the same as in FIG.

FIG. 2A shows the first open groove 13, the first element 31,
It has a second element 11 and a connecting portion 12.

Further, the second open groove 18 is provided across the first electrode 2 side of the semiconductor 3 that constitutes the first element, and both of these are removed.

Also, a groove 7 is formed by side etching to connect the oxide conductive film of the second electrode to the bottom surface 6 of the first electrode.

This third open groove 20 is shifted toward the first element 31 side to a depth of about 60μ.

Therefore, the right end portion of the third open groove 20 is slightly (approximately 10μ) closer to the first element 3 than the part of the connector portion 30.
It is provided over one side.

Further, by long-term oxidation at low temperature, oxide insulator 3
4, the second electrodes 4 of the first and second elements 31, 11 are electrically cut and separated from each other, and the leakage between these electrodes is also reduced to 10 ^-7 A/cm (1
(meaning on the order of 10 ^-7 A per cm width) or less.

FIG. 2B shows a plan view, and at its end (lower side in the drawing) the first, second and third open grooves 13,
18 and 20 are provided.

Furthermore, the first electrode 2 was cut and separated at 13 at the end of the element (bottom side of the drawing). Furthermore, this is covered with the material of the semiconductor 3 and the second electrode 4, and then this second
The electrode conductor 4 was separated by a third groove 50 at the outer end side of the electrode conductor 13'.

This longitudinal section is similar to the end section of FIG. 3A.

In this case as well, a passivation film is formed to cover these open grooves 50.

In this drawing, the widths of the first, second, and third opening grooves are 70 to 20μ, and the width of the connecting portion is typically 350 to 80μ, typically 200μ.

By reducing the spot diameter of the above YAG laser based on the technical concept, the area required for this connection can be reduced, and the effective area (effective efficiency) as a photoelectric conversion device can be further improved. have.

FIG. 3 shows the external lead electrode section of the photoelectric conversion device.

3A corresponds to FIG. 1, the external extraction electrode section 5 has a pad 49 that contacts the external extraction electrode 47, and this pad 49 is connected to the second electrode (upper electrode) 4. ing. At this time, even if the pressure applied to the electrode 47 is too strong and the pad 49 penetrates the semiconductor 3 underneath and comes into contact with the first electrode 2, the groove 13' is provided to prevent the pad 49 and 2 from being shot.

Further, the outer portion is cut and separated by an open groove 50 in which the first electrode, the semiconductor, and the second electrode are simultaneously scribed with one laser irradiation.

Furthermore, FIG. 3B shows that another pad 48 connected to the lower first electrode 2 is made of a second electrode material at 18'.
They are connected to each other.

Furthermore, the pad 48 is in contact with the external extraction electrode 46 and is electrically connected to the outside.

Here again, the pad 48 is completely electrically isolated from the adjacent photoelectric conversion device by the opening grooves 18', 20'', and 50, and the bottom contact with the first electrode 2 is formed at 18' at 6. .

In other words, the photoelectric conversion device is covered with the organic resin mold 22 except for the electrode portions 5 and 45, thereby improving moisture resistance.

Also this panel for example 40cm x 60cm or 60cm x
By combining 2, 4 or 1 piece of 20cm, 40cm x 120cm in an aluminum sash or carbon fiber frame, you can create a package of 120cm x 40cm NEDO.
It is possible to provide panels for standard high power.

In addition, it is also effective for this NEDO standard panel to increase its mechanical strength against wind pressure, rain, etc. by attaching a fluorine-based protective film using Seaflex to the reflective surface side (upper side in the drawing) of the photoelectric conversion device of the present invention. It is.

In the present invention, glass is particularly used as the substrate among light-transmitting insulating substrates.

However, it is effective to use as this substrate a composite substrate in which aluminum oxide, silicon oxide, or silicon nitride is formed on a flexible organic resin, aluminum, stainless steel, etc. to a thickness of 0.1 to 2 μm.

In particular, when this composite substrate is applied to the above-described embodiment, silicon oxide or silicon nitride can prevent damage to the transparent conductive film on the upper surface and create a mixture of the substrate and the transparent conductive film. It had a blocking effect and was particularly effective.

Furthermore, the details of the present invention will be supplemented by describing specific examples below.

〔Concrete example〕

This embodiment is illustrated according to the drawing in FIG.

That is, the thickness of chemically strengthened glass as the transparent substrate 1
1.1 mm, length 60 cm, and width 20 cm were used.

A silicon nitride film was applied to the top surface to a thickness of 0.1 μm to form a blocking layer.

Furthermore, a transparent conductive film of ITO, 1600Å +
SnO ₂ 300Å was fabricated by electron beam evaporation.

Furthermore, after this, the first open groove was made with a spot diameter of 50μ.
A YAG laser with an output of 1 W was controlled by a microcomputer at a scanning speed of 3 m/min.

Furthermore, the first electrode semiconductor was scanned in a rectangular manner at a position 5 mm inside the glass edge at the edge of the panel using a laser beam output of 1 W to prevent an electrical short circuit with the frame of the panel.

The element regions 31 and 11 were 15 mm wide.

After this, the well-known PCVD method was used to create the image shown in Figure 2.
A non-single crystal semiconductor with one PIN junction was fabricated.

Its thickness was approximately 0.5μ.

After this, the first element 3 is removed by 100μ from the first groove.
1 and output 1 with a spot diameter of 50μφ.
A second open groove 18 was formed by laser scribing in the atmosphere at W as shown in FIG. 2B.

Furthermore, ITO was formed as an oxide conductive film over the entire structure by electron beam evaporation to an average thickness of 1050 Å, and chromium was further formed on the top surface to an average thickness of 1600 Å by electron beam evaporation to form the second electrode 45 and the connector 30. was constructed.

Furthermore, the third open groove 20 was similarly scribed using a YAG laser, and the output of 1W was 50μφ.
Accordingly, the second open groove 18 was formed with a depth of 100 μm shifted toward the first element 31 side, and FIG. 2C was obtained.

Thereafter, a silicon nitride film with a thickness of 1000 Å was formed at a temperature of 200° C. by the PCVD method to form a passivation film 21.

Then, 40 15mm wide elements are placed on a 20cm x 60cm panel.
I was able to make steps.

AM1 (100mW/cm ² ) as the effective efficiency of the panel
We were able to obtain an output of 7.7% and an output of 8.1W.

The effective area is ^1102cm2 , 91.8% of the whole panel
was able to be used effectively.

In this embodiment, by overlapping the upper protective organic resin 22 as shown in FIG. This made mass production possible at an extremely low cost.

In FIGS. 1 and 2, light was incident from the lower translucent insulating substrate.

However, in the present invention, the light incident side is not limited to the lower side, and it is also possible to use ITO as the upper electrode and irradiate light from the upper side, and it is also possible to use a flexible substrate instead of a glass substrate. It is.

〔Effect of the invention〕

According to the present invention, only the second electrode is removed by laser scribing, and the non-single-crystal semiconductor under the groove irradiated with laser light is not removed, and without polycrystallization due to heat, the groove can be opened. We were able to perform ideal laser processing that selectively removes only the oxide conductive film and the metal on it.

Furthermore, interfacial oxidation can be prevented, and the resistance of ohmic contact with the oxide conductive film can be lowered, making it possible to obtain an extremely desirable laser processing method for the oxide conductive film.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view showing the manufacturing process of a photoelectric conversion device according to the present invention. FIG. 2 is a longitudinal sectional view of a photoelectric conversion device according to the present invention. FIG. 3 is a partially enlarged longitudinal sectional view of another photoelectric conversion device according to the present invention.

Claims (1)

[Claims] 1. A step of forming, on a non-single crystal semiconductor on a substrate, a multilayer film having an oxide conductive film in close contact with the semiconductor and a metal film mainly composed of chromium or nickel on the upper surface. A method for manufacturing a semiconductor device, comprising: irradiating the multilayer film with a laser beam to selectively remove the multilayer film to form an open groove. 2. The method of manufacturing a semiconductor device according to claim 1, wherein at least the P or N type semiconductor layer of the semiconductor under the trench is oxidized and transformed into a silicon oxide insulator. 3. A step of irradiating a conductive film on a substrate having an insulating surface with a laser beam to form a first trench to form a plurality of first electrode regions, and a step of forming a plurality of first electrode regions on the first trench and the electrode region. At least one PN or PIN junction
a second step of irradiating the semiconductor on each of the first electrode regions with a laser beam to selectively remove the semiconductor to expose the first electrode; a step of forming an open groove; a step of forming a multilayer film having an oxide conductive film on the semiconductor and in the second open groove and a metal film containing chromium or nickel as a main component on the upper surface; irradiating the multilayer film with a laser beam to selectively remove the multilayer film to form a third groove and separate the plurality of second electrode regions; An element in which the first electrode, a semiconductor, and a second electrode are stacked is formed in each of the electrode regions, and one of the elements and an adjacent element are connected in series. Characteristic semiconductor device manufacturing method. 4. The method for manufacturing a semiconductor device according to claim 3, wherein at least the P or N type semiconductor layer of the semiconductor under the trench is oxidized and transformed into a silicon oxide insulator.