JPH0557355B2 - - Google Patents
Info
- Publication number
- JPH0557355B2 JPH0557355B2 JP28144884A JP28144884A JPH0557355B2 JP H0557355 B2 JPH0557355 B2 JP H0557355B2 JP 28144884 A JP28144884 A JP 28144884A JP 28144884 A JP28144884 A JP 28144884A JP H0557355 B2 JPH0557355 B2 JP H0557355B2
- Authority
- JP
- Japan
- Prior art keywords
- frequency coil
- gas
- pressure
- induction heating
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010574 gas phase reaction Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000006698 induction Effects 0.000 claims description 12
- 239000007789 gas Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Constitution Of High-Frequency Heating (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28144884A JPS61159574A (ja) | 1984-12-31 | 1984-12-31 | 高周波誘導加熱気相反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28144884A JPS61159574A (ja) | 1984-12-31 | 1984-12-31 | 高周波誘導加熱気相反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61159574A JPS61159574A (ja) | 1986-07-19 |
| JPH0557355B2 true JPH0557355B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-23 |
Family
ID=17639313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28144884A Granted JPS61159574A (ja) | 1984-12-31 | 1984-12-31 | 高周波誘導加熱気相反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159574A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1271233B (it) * | 1994-09-30 | 1997-05-27 | Lpe | Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati |
| US6002109A (en) | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| CN102277603A (zh) * | 2011-08-03 | 2011-12-14 | 深圳大学 | 一种感应热/电沉积制备涂层或薄膜的装置及方法 |
-
1984
- 1984-12-31 JP JP28144884A patent/JPS61159574A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61159574A (ja) | 1986-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5119541A (en) | Wafer succeptor apparatus | |
| US4512283A (en) | Plasma reactor sidewall shield | |
| KR100687378B1 (ko) | 고온 다층 합금 히터 어셈블리 및 관련 방법 | |
| EP0792947B1 (en) | Process using an inductively coupled plasma reactor | |
| US5810936A (en) | Plasma-inert cover and plasma cleaning process and apparatus employing same | |
| US5522936A (en) | Thin film deposition apparatus | |
| EP0308695B1 (en) | A component for producing semi-conductor devices and process of producing it | |
| JPH0557355B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP2002362998A (ja) | 炭化珪素単結晶の製造方法及び製造装置 | |
| JPH04133417A (ja) | 熱処理装置 | |
| JPS5884111A (ja) | ケイ素の改良されたプラズマ析出法 | |
| JPS592374B2 (ja) | プラズマ気相成長装置 | |
| JPH05238882A (ja) | 気相成長用サセプタ | |
| JPH07106255A (ja) | 縦型熱処理装置 | |
| KR930004238B1 (ko) | 세로형 기상(氣相)성장장치 및 방법 | |
| JPS6158893A (ja) | 化合物半導体の気相成長装置 | |
| US6224678B1 (en) | Modified thermocouple mounting bushing and system including the same | |
| JPS5837388B2 (ja) | キソウセイチヨウホウホウ | |
| JPH06310442A (ja) | 気相成長装置 | |
| JP3029953B2 (ja) | 半導体ウェーハの熱処理装置 | |
| JP3888142B2 (ja) | 化合物半導体多結晶の合成方法 | |
| JPH0445275A (ja) | プラズマ装置 | |
| JPH0559277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0483333A (ja) | 基板処理装置 | |
| JPH10223620A (ja) | 半導体製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |