JPH0556315B2 - - Google Patents
Info
- Publication number
- JPH0556315B2 JPH0556315B2 JP16619284A JP16619284A JPH0556315B2 JP H0556315 B2 JPH0556315 B2 JP H0556315B2 JP 16619284 A JP16619284 A JP 16619284A JP 16619284 A JP16619284 A JP 16619284A JP H0556315 B2 JPH0556315 B2 JP H0556315B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- single crystal
- semiconductor
- crystal thin
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体単結晶薄膜の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a semiconductor single crystal thin film.
従来の技術
第３図は従来の半導体単結晶薄膜の製造方法に
適用される製造装置の一例であつて、１は半導体
ウエハで、これが予備加熱のための平板状カーポ
ンヒータ２上に載置される。３は線状のカーボン
ヒータであつて、半導体ウエハ１上を例えば矢印
３ａ方向に所定の速度をもつて移動し得るように
なされている。Prior Art FIG. 3 shows an example of a manufacturing apparatus applied to a conventional semiconductor single crystal thin film manufacturing method, in which 1 is a semiconductor wafer, which is placed on a flat carbon heater 2 for preheating. Ru. Reference numeral 3 denotes a linear carbon heater, which can be moved over the semiconductor wafer 1 at a predetermined speed, for example, in the direction of an arrow 3a.
第４図に第３図の半導体ウエハの構造例を示
し、以下これについて説明する。４は例えば石英
からなる絶縁基板、５はその上に形成されたシリ
コン等からなる多結晶半導体層、６はその上に被
着形成されたSiO2層等からなるキヤツプ層であ
る。尚、基板４としては、シリコン基板を設けそ
の上にSiO2層の如き絶縁層を被着形成したもの
を用いることができる。 FIG. 4 shows an example of the structure of the semiconductor wafer shown in FIG. 3, which will be described below. 4 is an insulating substrate made of, for example, quartz; 5 is a polycrystalline semiconductor layer made of silicon or the like formed thereon; and 6 is a cap layer made of an SiO 2 layer or the like deposited thereon. As the substrate 4, a silicon substrate may be used with an insulating layer such as a SiO 2 layer deposited thereon.
第３図の製造装置において、線状カーボンヒー
タ３が矢印３ａ方向に移動するとき、第４図にお
ける多結晶半導体層５は、第５図に示すごとくカ
ーボンヒータ３によつて加熱されて溶融されてい
る領域Ｍ、未だ溶融されていない多結晶領域Ｐ及
び溶融後自然冷却されて固化冷却されて、単結晶
化している領域RCに分けられる。又、領域Ｐ乃
びＭの中間位置をａ、領域Ｍ及びRCの中間位置
をｂとする。第５図のグラフでは横軸をカーボン
ヒータ３の移動方向３ａに沿う位置とし、縦軸を
温度とする。TSは板状カーボンヒータ２の予備
加熱温度、TMはシリコン多結晶半導体層５の融
点である。しかしてカーボンヒータ３が移動する
につれて多結晶半導体層５が加熱され、その温度
が高くなり融点TMを超えると溶融し、カーボン
ヒータ３が遠ざかると自然冷却されて徐々に固化
冷却されて単結晶化（再結晶化）される。この温
度変化の曲線をS1として示す。 In the manufacturing apparatus of FIG. 3, when the linear carbon heater 3 moves in the direction of the arrow 3a, the polycrystalline semiconductor layer 5 in FIG. 4 is heated and melted by the carbon heater 3 as shown in FIG. The polycrystalline region M is divided into a polycrystalline region P which is not yet melted, a polycrystalline region P which is naturally cooled after melting, and a region RC which is solidified and turned into a single crystal. Also, let the intermediate position between regions P and M be a, and the intermediate position between regions M and RC be b. In the graph of FIG. 5, the horizontal axis represents the position along the moving direction 3a of the carbon heater 3, and the vertical axis represents the temperature. T S is the preheating temperature of the plate-shaped carbon heater 2 , and T M is the melting point of the silicon polycrystalline semiconductor layer 5 . As the carbon heater 3 moves, the polycrystalline semiconductor layer 5 is heated, and when the temperature rises and exceeds the melting point T M , it melts, and as the carbon heater 3 moves away, it is naturally cooled and gradually solidified and cooled to become a single crystal. (recrystallization). The curve of this temperature change is shown as S1 .
尚、上述の線状加熱手段としては、レーザビー
ム発生手段、電子ビーム発生手段或いはハロゲン
ランプ、IRランプ等を用いることもできる。そ
の場合は板状ヒータ２を用いなくても良い。 Note that as the above-mentioned linear heating means, a laser beam generating means, an electron beam generating means, a halogen lamp, an IR lamp, etc. can also be used. In that case, the plate heater 2 may not be used.
しかして、多結晶半導体層５を加熱溶融し、そ
の後冷却固化して再結晶化させる場合、単結晶層
にサブグレインバウンダリイと呼ばれる小傾角の
結晶粒界が発生する場合が多い。この単結晶層に
サブグレインバウンダリイが発生する原因につい
ては、現在のところ明確ではないが、多結晶半導
体層５が溶融後、冷却固化して再結晶化する時点
で放出される潜熱がその原因の一つであると考え
られる。即ち、サブグレインパウンダリイの発生
は、多結晶半導体層の溶融後の固化時に発生する
潜熱という系の自由エネルギを、結晶粒界の持つ
界面エネルギとして固定していることに起因する
と推察できる。この推察による仮定によれば、固
液界面近傍での熱の流れ方を、この潜熱が優先的
に固液境界近傍から外部へ放出されるように制御
することで、前述のサブグレインバウンダリイの
発生を回避することができるものと考えられる。 Therefore, when the polycrystalline semiconductor layer 5 is heated and melted and then cooled and solidified to be recrystallized, small-angle crystal grain boundaries called subgrain boundaries often occur in the single crystal layer. The reason why subgrain boundaries occur in this single crystal layer is not clear at present, but the cause is the latent heat released when the polycrystalline semiconductor layer 5 is melted, cooled, solidified, and recrystallized. It is considered to be one of the That is, it can be inferred that the occurrence of subgrain boundaries is due to the fact that the free energy of the latent heat system generated during solidification after melting of the polycrystalline semiconductor layer is fixed as the interfacial energy of the crystal grain boundaries. According to the assumption based on this speculation, by controlling the flow of heat near the solid-liquid interface so that this latent heat is preferentially released from the vicinity of the solid-liquid boundary to the outside, the above-mentioned subgrain boundary can be achieved. It is thought that this can be avoided.
発明が解決しようとする問題点
斯る点に鑑み本発明は、サブグレインバウンダ
リイが発生しに難く、高品質の半導体単結晶薄膜
を得ることのできる半導体単結晶薄膜の製造方法
を提案しようとするものである。Problems to be Solved by the Invention In view of the above, the present invention seeks to propose a method for manufacturing a semiconductor single crystal thin film that is unlikely to cause subgrain boundaries and can obtain a high quality semiconductor single crystal thin film. It is something to do.
問題点を解決するための手段
本発明による半導体単結晶薄膜の製造方法は、
半導体層に対して相対的に加熱手段を走査させ
て、半導体層を溶融させた後、固化冷却して半導
体単結晶薄膜を形成するようにした半導体単結晶
薄膜の製造方法において、加熱手段に後続する冷
却手段を設け、上記半導体層の溶融領域に続く再
結晶化領域の温度勾配を急峻にするようにしたも
のである。Means for Solving the Problems The method for manufacturing a semiconductor single crystal thin film according to the present invention includes:
In a method for manufacturing a semiconductor single crystal thin film in which a heating means is scanned relative to a semiconductor layer to melt the semiconductor layer and then solidified and cooled to form a semiconductor single crystal thin film, a method subsequent to the heating means is provided. A cooling means is provided to steepen the temperature gradient in the recrystallized region following the melted region of the semiconductor layer.
作 用
斯る製造方法によれば、冷却手段によつて半導
体薄膜の溶融領域に続く再結晶化領域の温度勾配
が急峻となるので、溶融領域の潜熱が急速に外部
へ放出され、これにより溶融領域が急峻に冷却さ
れて、サブグレインバウンダリイのごとき小傾角
の結晶粒界の発生の可能性が低下するものであ
る。Effect: According to this manufacturing method, the cooling means makes the temperature gradient of the recrystallization region following the melting region of the semiconductor thin film steep, so that the latent heat of the melting region is rapidly released to the outside, thereby causing the melting. The region is cooled steeply, and the possibility of occurrence of small-angle grain boundaries such as subgrain boundaries is reduced.
実施例
以下に第１図を参照して本発明の一実施例を説
明するも、第１図において第３図と対応する部分
には同一符号を付して重複説明を省略する。第１
図の実施例も第３図と同様にカーボンヒータ３を
加熱手段として用いて半導体ウエハ１を加熱して
溶融し、これを固化冷却して半導体単結晶薄膜を
形成する場合である。又、半導体ウエハ１の具体
的構成例は上述した第４図及びそれに関連した説
明と同様である。Embodiment An embodiment of the present invention will be described below with reference to FIG. 1. In FIG. 1, parts corresponding to those in FIG. 1st
The illustrated embodiment also uses the carbon heater 3 as a heating means to heat and melt the semiconductor wafer 1, as in FIG. 3, and solidifies and cools it to form a semiconductor single crystal thin film. Further, a specific example of the structure of the semiconductor wafer 1 is the same as that shown in FIG. 4 and the related explanation described above.
本発明においては線状加熱手段３に後続して、
線状の冷却手段８を設けるものである。この例の
冷却手段８は金属、プラスチツク等のパイプ８ａ
の下側に多数の孔を穿設し、このパイプにヘリウ
ム、アルゴン等の冷却ガスを通過させ、加熱手段
３に後続して、半導体ウエハ１を走査させ、冷却
ガスを半導体１に吹き付けて加熱手段３によつて
溶融された半導体単結晶薄膜を急速に固化ウエハ
冷却して、単結晶薄膜を形成するものである。第
５図に示す如く、点ｂより右側の半導体薄膜５の
再結晶領域の温度勾配は、曲線S2として示すごと
くその勾配が曲線S1に比し急峻となる。この温度
勾配は負の温度勾配である。 In the present invention, following the linear heating means 3,
A linear cooling means 8 is provided. The cooling means 8 in this example is a pipe 8a made of metal, plastic, etc.
A number of holes are drilled in the lower side, and a cooling gas such as helium or argon is passed through this pipe, followed by the heating means 3, the semiconductor wafer 1 is scanned, and the cooling gas is blown onto the semiconductor 1 to heat it. The semiconductor single crystal thin film melted by means 3 is rapidly solidified and cooled on a wafer to form a single crystal thin film. As shown in FIG. 5, the temperature gradient in the recrystallized region of the semiconductor thin film 5 on the right side of point b is steeper than that of curve S1, as shown by curve S2 . This temperature gradient is a negative temperature gradient.
かくすることにより、加熱手段３によつて溶融
された多結晶半導体層５は冷却手段８によつて急
速に固化冷却するので、その潜熱が急速に放散さ
れ、サブグレインバウンダリイの如き小傾角の結
晶粒界の発生が頗る少なくなる。 As a result, the polycrystalline semiconductor layer 5 melted by the heating means 3 is rapidly solidified and cooled by the cooling means 8, so that its latent heat is rapidly dissipated, and the polycrystalline semiconductor layer 5 melted by the heating means 3 is rapidly solidified and cooled. The occurrence of grain boundaries is significantly reduced.
第２図は本発明の他の実施例であつて冷却手段
８として孔を設けていない金属製のパイプ８ａに
冷媒を通過させ加熱手段３に後続して、半導体ウ
エハ１を走査させるようにするものである。この
場合の冷媒としては水等の液体或いはヘリウム、
窒素等の液体又は気体が可能である。尚、パイプ
８ａの表面を黒化することにより、冷却効率を上
げることができる。この場合も作用効果は第１図
の場合と同様である。尚、第１図及び第２図の実
施例において、加熱手段３がカーボンヒータの場
合はその走査速度は0.1〜10mm／sec、望しくは２
mm／sec、レーザビーム発生手段の場合は１〜100
mm／sec、望しくは20mm／sec、電子ビーム発生手
段の場合は50〜5000mm／sec、望しくは200mm／
sec程度が目安であり、冷却手段８の走査速度も
それに合わせるようにする。 FIG. 2 shows another embodiment of the present invention, in which a coolant is passed through a metal pipe 8a without holes as a cooling means 8, followed by a heating means 3, and the semiconductor wafer 1 is scanned. It is something. In this case, the refrigerant is liquid such as water, helium,
Liquids or gases such as nitrogen are possible. Note that cooling efficiency can be increased by blackening the surface of the pipe 8a. In this case as well, the effect is the same as in the case of FIG. In the embodiments shown in FIGS. 1 and 2, if the heating means 3 is a carbon heater, the scanning speed is 0.1 to 10 mm/sec, preferably 2.
mm/sec, 1 to 100 for laser beam generation means
mm/sec, preferably 20 mm/sec, 50 to 5000 mm/sec, preferably 200 mm/sec in the case of electron beam generating means
A rough guideline is about seconds, and the scanning speed of the cooling means 8 should be adjusted accordingly.
発明の効果
上述せる本発明によれば、加熱手段に後続する
冷却手段を設けて半導体薄膜の溶融領域に続く再
結晶化領域の温度勾配を急峻にするようにしたの
で、半導体薄膜の加熱手段によつて溶融された
後、固化冷却されて再結晶される領域の潜熱の放
散が急速に行われるので、サブグレインバウンダ
リイの如き小傾角の結晶粒界の発生が著しく減少
し、高品質の半導体単結晶薄膜を得ることができ
る。Effects of the Invention According to the present invention described above, the cooling means following the heating means is provided to steepen the temperature gradient in the recrystallization region following the melting region of the semiconductor thin film. As a result, the latent heat in the region that is melted, solidified, cooled, and recrystallized is rapidly dissipated, which significantly reduces the occurrence of small-angle grain boundaries such as subgrain boundaries, resulting in high-quality semiconductors. A single crystal thin film can be obtained.
第１図及び第２図は本発明による半導体単結晶
薄膜の製造方法を適用する製造装置の各例を示す
斜視図、第３図は従来の半導体単結晶薄膜の製造
方法の適用される製造装置の一例を示す斜視図、
第４図は半導体ウエハの構造を示す断面図、第５
図は第３図の製造装置の説明に供するる説明図で
ある。
１は半導体薄膜を有する半導体ウエハ、２は加
熱板、３は加熱手段、８は冷却手段、４は基板、
５は半導体薄膜、６はキヤツプ層である。
1 and 2 are perspective views showing examples of manufacturing equipment to which the method for manufacturing a semiconductor single crystal thin film according to the present invention is applied, and FIG. 3 is a manufacturing equipment to which a conventional method for manufacturing a semiconductor single crystal thin film is applied. A perspective view showing an example of
Figure 4 is a sectional view showing the structure of a semiconductor wafer, Figure 5 is a sectional view showing the structure of a semiconductor wafer.
The figure is an explanatory view for explaining the manufacturing apparatus of FIG. 3. 1 is a semiconductor wafer having a semiconductor thin film, 2 is a heating plate, 3 is a heating means, 8 is a cooling means, 4 is a substrate,
5 is a semiconductor thin film, and 6 is a cap layer.
Claims (1)
せて、上記半導体層を溶融させた後、固化冷却し
て半導体単結晶薄膜を形成するようにした半導体
単結晶薄膜の製造方法に於いて、上記加熱手段に
後続する冷却手段を設け、上記半導体層の溶融領
域に続く再結晶化領域の温度勾配を急峻にするよ
うにしたことを特徴とする半導体単結晶薄膜の製
造方法。1. In a method for manufacturing a semiconductor single crystal thin film, the semiconductor layer is melted by scanning a heating means relative to the semiconductor layer, and then solidified and cooled to form a semiconductor single crystal thin film. A method for producing a semiconductor single crystal thin film, characterized in that a cooling means is provided subsequent to the heating means to steepen the temperature gradient in a recrystallized region following the melted region of the semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16619284A JPS6144786A (en) | 1984-08-08 | 1984-08-08 | Manufacture of thin film of semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16619284A JPS6144786A (en) | 1984-08-08 | 1984-08-08 | Manufacture of thin film of semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144786A JPS6144786A (en) | 1986-03-04 |
| JPH0556315B2 true JPH0556315B2 (en) | 1993-08-19 |
Family
ID=15826791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16619284A Granted JPS6144786A (en) | 1984-08-08 | 1984-08-08 | Manufacture of thin film of semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144786A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2797104B2 (en) * | 1988-10-21 | 1998-09-17 | 正國 鈴木 | Method for manufacturing semiconductor crystal layer |
| JP2840081B2 (en) * | 1989-06-09 | 1998-12-24 | 株式会社リコー | Semiconductor thin film manufacturing method |
| JP2981221B1 (en) * | 1998-11-25 | 1999-11-22 | 株式会社東京機械製作所 | Web paper tension control device for rotary press |
| US20090191348A1 (en) * | 2008-01-25 | 2009-07-30 | Henry Hieslmair | Zone melt recrystallization for inorganic films |
| JP7244256B2 (en) * | 2018-11-08 | 2023-03-22 | 住友重機械工業株式会社 | LASER ANNEALER, WAFER HOLDER AND LASER ANNEALING METHOD |
-
1984
- 1984-08-08 JP JP16619284A patent/JPS6144786A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144786A (en) | 1986-03-04 |
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