JPH0551997B2 - - Google Patents
Info
- Publication number
- JPH0551997B2 JPH0551997B2 JP59131872A JP13187284A JPH0551997B2 JP H0551997 B2 JPH0551997 B2 JP H0551997B2 JP 59131872 A JP59131872 A JP 59131872A JP 13187284 A JP13187284 A JP 13187284A JP H0551997 B2 JPH0551997 B2 JP H0551997B2
- Authority
- JP
- Japan
- Prior art keywords
- sense amplifier
- transistor
- line
- circuit
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000004913 activation Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59131872A JPS6111991A (ja) | 1984-06-28 | 1984-06-28 | 半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59131872A JPS6111991A (ja) | 1984-06-28 | 1984-06-28 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6111991A JPS6111991A (ja) | 1986-01-20 |
| JPH0551997B2 true JPH0551997B2 (cs) | 1993-08-04 |
Family
ID=15068105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59131872A Granted JPS6111991A (ja) | 1984-06-28 | 1984-06-28 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6111991A (cs) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250588A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | スタテイツク型ｒａｍ |
| JP2538563B2 (ja) * | 1986-05-20 | 1996-09-25 | 三菱化学株式会社 | 高品位コ−クスの製造方法 |
| JPH01179292A (ja) * | 1987-12-29 | 1989-07-17 | Nec Corp | 半導体記憶装置 |
| JP2840277B2 (ja) * | 1988-02-16 | 1998-12-24 | テキサス インスツルメンツ インコーポレイテツド | 改良したバイ―ｃｍｏｓ読取り／書込みメモリ |
| KR920000409B1 (ko) * | 1989-11-30 | 1992-01-13 | 현대전자산업 주식회사 | 다이나믹램의 분리회로 |
-
1984
- 1984-06-28 JP JP59131872A patent/JPS6111991A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111991A (ja) | 1986-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |